AFF755B. MagnetoResistive Field Sensor. DAtA ShEEt

Similar documents
AFF756. MagnetoResistive Field Sensor DATA SHEET

AA747. MagnetoResistive Angle Sensor. DAtA Sheet

AA746. MagnetoResistive FreePitch Sensor. Data sheet

AL794 MagnetoResistive FixPitch Sensor (2.5 mm)

AA745A. MagnetoResistive FreePitch Sensor DATA SHEET

GF705 MagnetoResistive Magnetic Field Sensor

AL795 MagnetoResistive FixPitch Sensor (0.5 mm)

AL796 MagnetoResistive FixPitch Sensor (2 mm)

AL780 MagnetoResistive FixPitch Sensor (5 mm)

EBR7912EBI-CA-KA Incremental Sensor Module with Reference

AL803 MagnetoResistive FixPitch Sensor (1 mm)

AL780 MagnetoResistive Length and Angle Sensor Data sheet

GF708 MagnetoResistive Magnetic Field Sensor

VTMS. Valve Train Measurement Solution. Data sheet

EBI7903CAx-DA-IF Incremental Sensor Module

GF708 MagnetoResistive Magnetic Field Sensor

EBI7904CAx-DA-IF Incremental FixPitch Sensor Module

Two elements in series configuration in a small SMD plastic package Low diode capacitance Low diode forward resistance AEC-Q101 qualified

Planar PIN diode in a SOD523 ultra small plastic SMD package.

BAP Product profile. 2. Pinning information. 3. Ordering information. Silicon PIN diode. 1.1 General description. 1.2 Features and benefits

DISCRETE SEMICONDUCTORS DATA SHEET. k, halfpage M3D102. BAP64-04W Silicon PIN diode Jan 29. Product specification Supersedes data of 2000 Jun 06

Planar PIN diode in a SOD523 ultra small SMD plastic package.

DATA SHEET. BAP50-05 General purpose PIN diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Feb May 10.

Four planar PIN diode array in SOT363 small SMD plastic package.

50 ma LED driver in SOT457

20 ma LED driver in SOT457

CDS4025 MagnetoResistive Current Sensor (I PN

DISCRETE SEMICONDUCTORS DATA SHEET. BAP65-03 Silicon PIN diode. Product specification Supersedes data of 2001 May Feb 11

BAS32L. 1. Product profile. High-speed switching diode. 1.1 General description. 1.2 Features and benefits. 1.3 Applications. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA V P ZSM. non-repetitive peak reverse power dissipation

High-speed switching in e.g. surface-mounted circuits

BAV102; BAV103. Single general-purpose switching diodes

EBK7000. Evaluation Kit for Angle and Length Measurement with MagnetoResistive Sensor Technology EBK7000_PIE_01. Product Information.

Single Zener diodes in a SOD123 package

BB Product profile. 2. Pinning information. 3. Ordering information. FM variable capacitance double diode. 1.1 General description

High-speed switching diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Planar PIN diode in a SOD882D leadless ultra small plastic SMD package.

BAS16GW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Wide working voltage range: nominal 2.4 V to 75 V (E24 range) Two tolerance series: ± 2 % and ± 5 % AEC-Q101 qualified

DISCRETE SEMICONDUCTORS DATA SHEET M3D124. BGA2003 Silicon MMIC amplifier. Product specification Supersedes data of 1999 Jul 23.

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage MBD128. BGA2022 MMIC mixer Dec 04. Product specification Supersedes data of 2000 Jun 06

RB521CS30L. 1. Product profile. 100 ma low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

40 V, 0.75 A medium power Schottky barrier rectifier

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current [1] ma V R reverse voltage V V RRM

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BAS21GW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

BCP56H series. 80 V, 1 A NPN medium power transistors

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current T j = 25 C V RRM

CMS2005 MagnetoResistive Current Sensor (I PN

Symbol Parameter Conditions Min Typ Max Unit V F forward voltage I F =10mA

High-speed switching diodes. Type number Package Configuration Package Nexperia JEITA JEDEC

DATA SHEET. BGA2712 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Jan Sep 10.

BGA Product profile. MMIC amplifier. 1.1 General description. 1.2 Features and benefits. 1.3 Applications. Quick reference data

Single Schottky barrier diode

BAS116GW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

VHF variable capacitance diode

High-speed switching diode in dual series configuration, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

BAV70SRA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. BFT46 N-channel silicon FET

PMEG4010ETP. 40 V, 1 A low VF MEGA Schottky barrier rectifier. Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply

CMS3050 Highly Dynamic MagnetoResistive Current Sensor (I PN

BAT54W series. 1. Product profile. 2. Pinning information. Schottky barrier diodes. 1.1 General description. 1.2 Features and benefits

PMEG2005EGW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

RB520CS30L. 1. Product profile. 100 ma low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissipation capability: P tot = 1000 mw

DISCRETE SEMICONDUCTORS DATA SHEET. BFS17W NPN 1 GHz wideband transistor. Product specification Supersedes data of November 1992.

BAV99QA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

DISCRETE SEMICONDUCTORS DATA SHEET M3D124. BGA2001 Silicon MMIC amplifier. Product specification Supersedes data of 1999 Jul 23.

NX3020NAK. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Low power DC-to-DC converters Load switching Battery management Battery powered portable equipment

DISCRETE SEMICONDUCTORS DATA SHEET. BF909WR N-channel dual-gate MOS-FET. Product specification Supersedes data of 1997 Sep 05.

BSS138AKA. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

BT D. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data. 4Q Triac

20 V, 2 A P-channel Trench MOSFET

BC817-25QA; BC817-40QA

Dual P-channel intermediate level FET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

20 V dual P-channel Trench MOSFET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

NX7002AK. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

DISCRETE SEMICONDUCTORS DATA SHEET. BFT93 PNP 5 GHz wideband transistor

Single Zener diodes in a SOD123 package

80 V, 1 A NPN medium power transistors. Type number Package PNP complement Nexperia JEITA JEDEC BCP56T SOT223 SC-73 - BCP53T

Leadless ultra small SMD plastic package Low package height of 0.37 mm Power dissipation comparable to SOT23 AEC-Q101 qualified

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

60 V, N-channel Trench MOSFET

General-purpose switching and amplification Mobile applications

20 V, single P-channel Trench MOSFET

General-purpose switching and amplification Mobile applications

BC857QAS. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

60 V, 340 ma dual N-channel Trench MOSFET

Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 1200 mw ElectroStatic Discharge (ESD) protection: 2 kv HBM

CMS2050 MagnetoResistive Current Sensor (I PN

PMZ950UPEL. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

30 V, 230 ma P-channel Trench MOSFET

INTEGRATED CIRCUITS DATA SHEET. TDA2611A 5 W audio power amplifier

Transcription:

The is a low noise magnetic fi eld sensor based on the Anisotropic MagnetoResistive (AMR) effect. The sensor contains a Wheatstone bridge including a fl ip coil for offset correction. This measurement principle also reduces the temperature coeffi - cient of the offset by a factor of 100. This sensor is ideally suited for the detection of weak magnetic fi elds (< 20 µg resp. < 2 nt) including the earth magnetic fi eld. The voltage necessary for driving the required fl ip-current of 150 ma is smaller than 0.5 V. This allows the serial connection of 3 sensors for a 3-axis measurement with typical supply voltages available in battery powered devices. The is available as a SO8 package (RoHS-conform) for SMD assembly. Product Overview Article description Package Delivery type HA-AD SO8 Tape on reel (4000) MA-AD LGA Tape on reel (5000) Quick Reference Guide Symbol Parameter Min. typ. Max. Unit V CC Supply voltage 1.2 5.0 9.0 V R B Bridge resistance 2.2 2.5 2.8 kω S Sensitivity (in range ±160 A/m) 13.0 15.0 17.0 mv/v ka/m I F Flip current (required) ±150 - - ma R F Flip coil resistance - 1.5 2.0 Ω Absolute Maximum Ratings In accordance with the absolute maximum rating system (IEC60134). Symbol Parameter Min. Max. Unit V CC Supply voltage -20.0 +20.0 V I Fmax Maximum fl ip current 1) -1.0 +1.0 A P F Maximum fl ip power dissipation - 50 mw Features Based on the AnisotropicMagnetoResistive (AMR) effect Contains one Wheatstone Bridge Integrated fl ip coil Temperature range from -40 C to +125 C Advantages Extreme sensitivity Wide range of magnetic fi eld strength Low power consumption Low fl ip coil resistance Very good signal to noise ratio Applications Compass Electronic navigation systems Battery powered applications Magnetometry Measurement of terrestrial magnetic fi eld Traffi c detection T amb Ambient temperature -40 +125 C T stg Storage temperature -40 +150 C V isolation Voltage between bridge and fl ip coil -250 +250 V MSL Moisture sensitivity level - 2-1) 10 µs pulse, 400 µs pause. Stresses beyond those listed under Absolute maximum ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.sensitec.com RoHS-Compliant Page 1 of 7

Magnetic Data H ext Operating magnetic field range -400 - +400 A/m B RES Resolution V CC = 5 V; BW = 50 Hz - 2.0 - nt Electrical Data of MR-Bridge T amb = 25 C; V CC = 5 V; unless otherwise specified. V CC Supply voltage 1.2 5.0 9.0 V S Sensitivity In the operating range of ±160 A/m 13.0 15.0 17.0 TC S Temperature coefficient of Sensitivity 1) See Fig. 3-0.32-0.36-0.40 %/K R B Bridge resistance 2) 2.2 2.5 2.8 kω TC RB Temperature coefficient of R B 3) 0.22 0.26 0.30 %/K V off Offset voltage per V CC -0.5 - +0.5 mv/v TC Voff Temperature coefficient of V off 4) -1.0 - +1.0 µv/v/k H off Magnetic offset per V CC - 0.15 - A/m/V N Noise level f > 100 Hz - 10 20 nv/ Hz ε Lin,80 Linearity error @ ±80 A/m -80 H ext +80 A/m - 0.15 0.25 % of FS ε Lin,240 Linearity error @ ±240 A/m -240 H ext +240 A/m - 0.80 0.90 % of FS ε Lin,400 Linearity error @ ±400 A/m -400 H ext +400 A/m - 2.30 2.70 % of FS mv/v ka/m 1) TCS = 100 S (T2) - S (T1) S (T1) (T 2 ) 2) Bridge resistance between pins 2 and 5, 4 and 6. 3) TC RB = 100 R B(T2) - R B(T1) R B(T1) (T 2 ) 4) TC Voff = V off(t2) - V off(t1) T 2 Electrical Data of Flip Coil and Test Connectors T amb = 25 C; V CC = 5 V; unless otherwise specified. I F Flip current (required) 1 µs on, 1 ms off ±150 - - ma t IF Flip pulse duration - 1.0 2.0 µs I Fmax Flip current (maximum) 10 µs on, 400 µs off - - ±1.0 A R F Flip coil resistance - 1.5 2.0 Ω TC RF Temperature coefficient of RF 5) 0.30 0.35 0.40 %/K I test Test current - - 200 ma H test Magnetic field strength per test current 0.25 0.35 0.45 A/m/mA 5) TC RF = 100 R F(T2) - R F(T1) R F(T1) (T 2 ) Dynamic Data f Frequency range 1 - - MHz Page 2 of 7

typical Performance Graphs Fig. 1: Output voltage as a function of the magnetic field strength (α = 0 ). Fig. 2: Output voltage vs. flip current at different H ext. Fig. 3: Sensitivity vs. ambient temperature. Fig. 4: Noise level for frequencies below 1 Hz (V CC =5 V). Fig. 5: Noise level for frequencies below 1 Hz (V CC =5 V) Page 3 of 7

typical Performance Graphs Fig. 6: Typically used flip pulses at different pulse durations (measured with Tektronix CT-1 Current Transducer). Fig. 7: Flip pulse length vs. flip current magnitude to achieve maximum resolution (see Fig. 10). Fig. 8: Used laser diode driver circuit for generating short flip current pulses. Fig. 9: Used instrumentation amplifier (Gain 100) for pre-amplifying sensor output signals. Fig. 10: Chip temperature vs. ambient temperature at different supply voltages. Page 4 of 7

in SO8-housing Pinning Pin Symbol Parameter 1 +I F Flip coil 2 -V out Negative output voltage 3 I test Test connector 4 GND Ground 5 +V out Positive output voltage 6 V CC Supply voltage 7 I test Test connector 8 -I F Flip coil Pin 1 is marked by a point on housing. Fig. 11: shown with magnetic field direction. Dimensions Fig. 12: Package outline of SO8-housing. thermal Characteristics Symbol Parameter Value Unit R th j-a Thermal resistance from junction to ambient 1) 210 K/W 1) R th j-a is specifi ed for device in SO8 package, soldered to printed circuit board on worst case mounting conditions. Page 5 of 7

General Information Product Status Article Note Status The product is in series production. The status of the product may have changed since this data sheet was published. The latest information is available on the internet at www.sensitec.com. Disclaimer Sensitec GmbH reserves the right to make changes, without notice, in the products, including software, described or contained herein in order to improve design and/or performance. Information in this document is believed to be accurate and reliable. However, Sensitec GmbH does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Sensitec GmbH takes no responsibility for the content in this document if provided by an information source outside of Sensitec products. In no event shall Sensitec GmbH be liable for any indirect, incidental, punitive, special or consequential damages (including but not limited to lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) irrespective the legal base the claims are based on, including but not limited to tort (including negligence), warranty, breach of contract, equity or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Sensitec product aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the General Terms and Conditions of Sale of Sensitec GmbH. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Unless otherwise agreed upon in an individual agreement Sensitec products sold are subject to the General Terms and Conditions of Sales as published at www.sensitec.com. Sensitec GmbH Georg-Ohm-Str. 11 35633 Lahnau Germany Tel. +49 6441 9788-0 Fax +49 6441 9788-17 www.sensitec.com sensitec@sensitec.com Page 6 of 7

General Information Application Information Applications that are described herein for any of these products are for illustrative purposes only. Sensitec GmbH makes no representation or warranty whether expressed or implied that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Sensitec products, and Sensitec GmbH accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the Sensitec product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Sensitec GmbH does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using Sensitec products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). Sensitec does not accept any liability in this respect. Life Critical Applications These products are not qualified for use in life support appliances, aeronautical applications or devices or systems where malfunction of these products can reasonably be expected to result in personal injury. Copyright 2018 by Sensitec GmbH, Germany All rights reserved. No part of this document may be copied or reproduced in any form or by any means without the prior written agreement of the copyright owner. The information in this document is subject to change without notice. Please observe that typical values cannot be guaranteed. Sensitec GmbH does not assume any liability for any consequence of its use. Sensitec GmbH Georg-Ohm-Str. 11 35633 Lahnau Germany Tel. +49 6441 9788-0 Fax +49 6441 9788-17 www.sensitec.com sensitec@sensitec.com Page 7 of 7