LED Driver for High Power LEDs ILD4001. Data Sheet. Industrial and Multimarket. Step down LED Controller for high power LEDs. Revision 2.

Similar documents
LED Drivers for High Power LEDs

Tire Pressure Monitoring Sensor

LED Drivers for Low Power LEDs BCR205W. Data Sheet. Industrial and Multimarket. Ultra low dropout LED controller. Revision 2.

LED Drivers for High Power LEDs

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

BFN18. Data Sheet. RF & Protection Devices. NPN Silicon High-Voltage Transistors. Revision 1.0,

Power Management & Multimarket

BGS22W2L10. Data Sheet. Power Management & Multimarket. DPDT (Dual-Pole / Double-Throw) Differential RF Switch. Revision October 12, 2012

Power Management & Multimarket

Power Management & Multimarket

Power Management & Multimarket

Power Management and Multimarket

Power Management & Multimarket

BGA7L1BN6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1,

BGB719N7ESD. Data Sheet. RF & Protection Devices. Low Noise Amplifier MMIC for FM Radio Applications. Revision 1.1,

BGA729N6. Data Sheet. RF & Protection Devices. Broadband Low Noise Amplifier for Portable and Mobile TV Applications. Revision 3.

Power Management & Multimarket

BGB717L7ESD. Data Sheet. RF & Protection Devices. SiGe:C Low Noise Amplifier MMIC for FM Radio Applications. Revision 3.

TVS Diodes ESD5V0L1B-02V. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes. Bi-directional Low Capacitance TVS Diode

Revision: Rev

Power Management & Multimarket

Power Management & Multimarket

BGM1034N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

Power Management & Multimarket

BGM1143N9. Data Sheet. RF & Protection Devices. Front-End Module for Global Navigation Satellite Systems (GNSS) Revision 2.0, Preliminary

Power Management & Multimarket

Power Management and Multimarket

BGM1043N7. Data Sheet. RF & Protection Devices. GPS and GLONASS Front-End Module. Revision 3.0,

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in ultra small package with 0.77mm 2 footprint. Revision 1.

BGA924N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

Power Management & Multimarket

Power Management & Multimarket

High Precision Hall Effect Switch for Consumer Applications

BGS12SN6. Data Sheet. Power Management & Multimarket. Wideband RF SPDT Switch in small package with 0.77mm 2 footprint. Revision 2.

BFP450. Datasheet. RF & Protection Devices. Linear Low Noise Silicon Bipolar RF Transistor. Revision 1.2,

BGA713L7. Data Sheet. RF & Protection Devices. Single-Band UMTS LNA (700, 800 MHz) Revision 3.0,

Revision: Rev

BGA748L16. Data Sheet. RF & Protection Devices. High Linearity Quad-Band UMTS LNA (2100, 1900, 900, 800 MHz) Revision 3.

BGSF110GN26. Preliminary Datasheet. RF & Protection Devices

High Precision Automotive Hall Effect Switch for 5V Applications

BFP450. Data Sheet. RF & Protection Devices. High Linearity Low Noise Si NPN RF Transistor. Revision 1.0,

BGA7L1N6. Data Sheet. RF & Protection Devices. Silicon Germanium Low Noise Amplifier for LTE. Revision 3.1 (Min/Max),

Analog Manifold Air Pressure Sensor IC. Analog Absolute Pressure Sensor. Revision 1.0,

BFP650. Data Sheet. RF & Protection Devices. High Linearity Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP720F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

TVS Diodes. ESD0P2RF Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes

BFP650. Data Sheet. RF & Protection Devices. High Linearity Low Noise SiGe:C NPN RF Transistor. Revision 1.0,

Power Management & Multimarket

BFP840ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.2,

Revision: Rev

BFP843. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor. Revision 1.

Revision: Rev

TVS Diodes. ESD18VU1B Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes

Power Management & Multimarket

BGA751N7. Data Sheet. RF & Protection Devices. SiGe Bipolar 3G/3.5G/4G Single-Band LNA. Revision 3.1,

BFP760. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

EiceDRIVER. High voltage gate drive IC. Application Note. AN Revision 1.3,

BGB741L7ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Broadband RF Amplifier MMIC. Revision 2.0,

BFP740. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP740F. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFR840L3RHESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

About this document. Table of Contents. Application Note

Edition Published by Infineon Technologies AG Munich, Germany 2017 Infineon Technologies AG All Rights Reserved.

BFR720L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BFR740L3RH. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BGA734L16. Data Sheet. RF & Protection Devices. Low Power Tri-Band UMTS LNA (2100, 1900, 800 MHz) Revision 1.1,

BFP842ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

BFP640. Data Sheet. RF & Protection Devices. Low Noise Silicon Germanium Bipolar RF Transistor. Revision 2.0,

BGS12PN10. Data Sheet. Power Management & Multimarket. SPDT high linearity, high power RF Switch. Revision

BGA628L7. Data Sheet. RF & Protection Devices. Silicon Germanium Wide Band Low Noise Amplifier. Revision 1.1, Preliminary

Revision: Rev

BFP720ESD. Data Sheet. RF & Protection Devices. Robust High Performance Low Noise Bipolar RF Transistor. Revision 1.0,

BFP640ESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.1,

TLE4961-3M. Data Sheet. Sense & Control. High Precision Automotive Hall Effect Latch. Revision 1.0,

Overvoltage at the Buck Converter Output

Ultra Low Quiescent Current Linear Voltage Regulator

TLE4997A8D Grade1. Technical Product Description. Sense & Control. Programmable Linear Dual Hall Sensor. Revision 1.0,

Dual channel 5 A, high-speed, low-side gate driver with high negative input voltage capability and advanced reverse current robustness

BGSA14GN10. Data Sheet. Power Management & Multimarket. Single-Pole Quad Throw Antenna Tuning Switch. Revision

Low Dropout Linear Voltage Regulator

BFP720FESD. Data Sheet. RF & Protection Devices. Robust Low Noise Silicon Germanium Bipolar RF Transistor. Revision 1.

Angle Sensor TLE5012BD. Data Sheet. Sense & Control. GMR-Based Dual Die Angle Sensor. Rev. 1.2,

BGA735N16. Data Sheet. RF & Protection Devices. High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz)

Revision: Rev

1EDI EiceDRIVER Compact 1EDI20N12AF. Data Sheet. Industrial Power Control. Single Channel MOSFET and GaN HEMT Gate Driver IC 1EDI20N12AF

BGSA13GN10. Data Sheet. Power Management & Multimarket. Single-Pole Triple Throw Antenna Tuning Switch. Revision

Revision: Rev

BGB707L7ESD. Data Sheet. RF & Protection Devices. SiGe:C Wideband MMIC LNA with Integrated ESD Protection. Revision 3.

SPDT RF CMOS Switch. Revision: Rev

AN523. About this document. Scope and purpose

Revision: Rev

Revision: Rev

Revision: Rev

Transcription:

LED Driver for High Power LEDs ILD4001 Data Sheet Revision 2.0, 2011-06-09 Industrial and Multimarket

Edition 2011-06-09 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Revision History Page or Item Subjects (major changes since previous revision) Revision 2.0, 2011-06-09 All Preliminary status removed Table 4 DC characteristics updated Table 5 Switching characteristics updated Chapter 6.4 LED current vs T S added Revision 1.5, 2011-05-30 Table 2 ESD capability updated Table 5 AC characteristics updated Table 7 Analog dimming updated Chapter 6.4 All figures updated Trademarks of Infineon Technologies AG AURIX, BlueMoon, C166, CanPAK, CIPOS, CIPURSE, COMNEON, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OmniTune, OptiMOS, ORIGA, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SMARTi, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore, X-GOLD, X-PMU, XMM, XPOSYS. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Data Sheet 3 Revision 2.0, 2011-06-09

Table of Contents Table of Contents Table of Contents................................................................ 4 List of Figures................................................................... 5 List of Tables.................................................................... 6 1 Features........................................................................ 7 2 Product Brief.................................................................... 8 3 Maximum Ratings............................................................... 10 4 Thermal Characteristics.......................................................... 11 5 Electrical Characteristics......................................................... 12 5.1 DC Characteristics............................................................... 12 5.2 Switching Characteristics.......................................................... 13 5.3 Digital Signals................................................................... 14 6 Basic Application Information..................................................... 15 6.1 External MOSFET................................................................ 15 6.2 Setting the Average LED Current.................................................... 15 6.3 Dimming of the LEDs............................................................. 16 6.4 Switching Parameters............................................................. 18 7 Application Circuit.............................................................. 24 8 Evaluation Board............................................................... 24 9 Package Information............................................................ 25 Data Sheet 4 Revision 2.0, 2011-06-09

List of Figures List of Figures Figure 1 Block Diagram................................................................. 8 Figure 2 Total Power Dissipation vs. Soldering Point Temperature T S............................. 11 Figure 3 Analog Voltage Dimming (12V,, T A =25 C) vs. R sense............................. 16 Figure 4 Analog Voltage Dimming (Relative) vs. R sense........................................ 17 Figure 5 Analog Voltage Dimming vs. T A (12V,, 110 mω, 47 µh).......................... 17 Figure 6 PWM Dimming: 3 db Deviation of Contrast Ratio to Linear Dimming (12 V, 68 µh, ).... 18 Figure 7 Application Circuit.............................................................. 24 Figure 8 ILD4001 on Evaluation Board Using BSP318S....................................... 24 Figure 9 Package Outline SC74.......................................................... 25 Figure 10 Recommended PCB Footprint for Reflow Soldering................................... 25 Figure 11 Tape Loading................................................................. 25 Data Sheet 5 Revision 2.0, 2011-06-09

List of Tables List of Tables Table 1 Pin Definition and Function....................................................... 9 Table 2 Maximum Ratings............................................................. 10 Table 3 Maximum Thermal Resistance................................................... 11 Table 4 DC Characteristics............................................................. 12 Table 5 Switching Characteristics........................................................ 13 Table 6 Digital Control Parameter at Pin EN/PWM........................................... 14 Data Sheet 6 Revision 2.0, 2011-06-09

1 Features Wide input voltage range: 4.5 V... 42 V Capable to drive N-channel MOSFETs that provide up to 3 A output current and up to 98% efficiency Temperature shut down mechanism Switching frequency up to 500 khz Analog and PWM dimming possible Typical 3 % output current accuracy Very low LED current drift over temperature Minimum external component required Small package: SC-74 SC74-3D Applications LED controller for indoor and outdoor illumination LED replacement lamps, e.g. MR16 halogen replacement Retail, office and residential high power luminaires Architectural lighting Downlights and light engines Appliances, e.g. fridge / freezer Product Name Package Pin Configuration Marking ILD4001 SC74-6-4 1 = V S 2 = GND 3 = EN 4 = V drive 5 = GND 6 = V sense 01 Data Sheet 7 Revision 2.0, 2011-06-09

Product Brief 2 Product Brief The ILD4001 is a hysteretic buck LED controller IC for driving high power LEDs in indoor and outdoor lighting applications. The LED controller is capable of driving an external MOSFET power transistor with the internal push-pull output stage to achieve LED currents of 350 ma up to 3 A and more depending on the dimensioning of the MOSFET, the thermal budget of the circuit board and the current sense resistor. The ILD4001 is widely suitable for LED applications with supply voltages up to 42 V. A multifunctional enable pin allows dimming of the LEDs with DC voltage or a PWM signal. Furthermore the enable pin can be used to switch the LED controller on and off to minimize power consumption in standby. The ILD4001 incorporates an integrated thermal shutdown function pulling low the V drive output signal once the junction temperature exceeds the threshold temperature. Once the junction temperature drops below the threshold temperature the V drive output is activated again. To provide maximum design flexibility, the ILD4001 is housed in a small SC-74 package. ILD4001 Buck LED Controller V S 1 Vstab Vstab I / V 6 Vsense TSD GND 2 5 GND Vref Vstab EN/ PWM 3 4 V drive Figure 1 Block Diagram Data Sheet 8 Revision 2.0, 2011-06-09

Product Brief Pin Definition Table 1 Pin Definition and Function Pin No. Name Pin Buffer Function Type Type 1 V s Input Supply voltage 2 GND GND IC ground 3 EN / PWM Input Multifunctional pin: Chip enable signal Analog dimming signal PWM dimming signal 4 V drive Output Push-pull switch output pin 5 GND GND IC ground 6 V sense Input LED current sense pin Data Sheet 9 Revision 2.0, 2011-06-09

Maximum Ratings 3 Maximum Ratings Table 2 Maximum Ratings Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Supply voltage V S 45 V Peak output current I drive 50 ma Total power dissipation, T s 115 C P tot 500 mw Junction temperature T J 150 C Solder temperature of GND pins T SGND 125 C Storage temperature range T STG -65 150 C ESD capability at pin 4 at all other pins V ESD HBM Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 4 kv HBM acc. to JESD22-A114 Data Sheet 10 Revision 2.0, 2011-06-09

Thermal Characteristics 4 Thermal Characteristics Table 3 Maximum Thermal Resistance Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Junction - soldering point 1) R thjs 70 K/W 1) For calculation of R thja please refer to application note AN077, Thermal Resistance Calculation 0.6 0.5 0.4 P tot [W] 0.3 0.2 0.1 0 0 20 40 60 80 120 140 T S [ C] Figure 2 Total Power Dissipation vs. Soldering Point Temperature T S Equation (1) is a first estimation to calculate the power dissipation of the IC: Ptot = VS I S + fswitch Cdrive VS 5V (1) Data Sheet 11 Revision 2.0, 2011-06-09

Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics All parameters at T A = 25 C, V S = 12 V, V EN = 3 V, unless otherwise specified. Table 4 DC Characteristics Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Supply voltage V S 4.5 42 V Overall current consumption open load I S open load 4.2 ma V S =4.5V, I LED =0mA Overall current consumption open load I S open load 5.1 ma V S =40V, I LED =0mA Overall current consumption open load I S open load 5.3 ma V S =42V, I LED =0mA Overall standby current consumption I S standby 260 na V S =4.5V, V EN = 0.4 V Overall standby current consumption I S standby 360 na V S =40V, V EN = 0.4 V Enable voltage for standby mode 1) V EN 0 0.4 V Enable voltage for analog dimming 2) V EN 1 42 V Enable voltage for linear analog dimming V EN 1 2 V linear dimming range Input current of multifunctional control pin I EN 150 270 µa V EN =3V Current of Sense input I sense 20 µa At any LED current Termperature shut down threshold T TSD 120 C V drive gets pulled low, refers to T J 1) In standby mode ILD4001 doesn t pull low the V drive signal. Depending on gate capacitance driven a 10 - kω shunt resistor to GND is required to avoid a floating gate of the MOSFET. A discharge time of about 1 µs is recommended. 2) V drive line requires a shunt resistor to GND to avoid a floating gate of the MOSFET for a V EN voltage below the min. specified limit Data Sheet 12 Revision 2.0, 2011-06-09

Electrical Characteristics 5.2 Switching Characteristics All parameters at T A = 25 C, unless otherwise specified. V S = 12 V, R sense = 158 mω (I LED = 730 ma), L = 68 µh, V EN = 3 V Table 5 Switching Characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Switching frequency f Switch 200 khz in series Maximum switching frequency f Switch max 500 khz for any coil value Output voltage in push-high V drive_high 5 V I drive =10mA condition Output voltage in pull-low V drive_low 250 mv I drive =-10mA condition Voltage offset of V sense input 1) V sense 116 mv in series, V S - V fled 3V Sense threshold hysteresis V sense hys ±15 % At any LED current Output current accuracy I outacc ±3 % in series Output current drift over supply voltage 1) Voltage offset below supply voltage V S I outaccvs 6 % in series V S = 12... 42 V Data Sheet 13 Revision 2.0, 2011-06-09

Electrical Characteristics 5.3 Digital Signals All parameters at T A = 25 C, unless otherwise specified. Table 6 Digital Control Parameter at Pin EN/PWM Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Input voltage for power on V On 2.5 3 42 V Full LED current Input voltage for power off 1) V Off -0.3 0.4 V Min. power on puls duration t On 10 µs 1) During power off ILD4001 doesn t pull low the V drive signal. Depending on gate capacitance driven a 10 - kω shunt resistor to GND is required to avoid a floating gate of the MOSFET. A discharge time of about 1 µs is recommended. Data Sheet 14 Revision 2.0, 2011-06-09

Basic Application Information 6 Basic Application Information This section covers the basic information required for calculating the parameters for a certain LED application. For detailed application information please check the application note AN213 (Driving 2-5 W LEDs with ILD4001) or visit our web site http://www.infineon.com/lowcostleddrivers 6.1 External MOSFET An external MOSFET is required to drive the LEDs in the ILD4001 application. There are a few factors to be considered while choosing the suitable external MOSFET. First, choose the correct voltage and current rating of the MOSFET. Please ensure the V DS breakdown voltage and I DS current capability is sufficient and ensure that the external MOSFET is working within the safe operating area region of DC mode. Second, the logic high level from ILD4001 is 5 V and the external MOSFET must be able to be driven with a 5 V gate voltage. Third, choose a low R DSON MOSFET to improve the efficiency of the system. The BSR302N is recommended for supply voltages up to 30 V and an output current up to 3.7 A. For higher supply voltages up to 42 V, the BSP318S is recommended with an output current of up to 2.6 A. For an overview of all suitable MOSFETs please visit http://www.infineon.com/smallsignalmosfets 6.2 Setting the Average LED Current The average output current for the LEDs is set by the external sense resistor R sense. To calculate the value of this resistor a first approximation can be calculated using Equation (2). V sense is dependent on the supply voltage V s and the number of LEDs in series. V R sense = I sense LED (2) Example Calculation V s = 12 V, I LED = 730 ma, L = 68 µh, V fled = 3 V, in series For this configuration V sense will settle at 116 mv. R sense = 158 mω according to Equation (2) An easy way to achieve this resistor value is to connect several standard resistors in parallel. Data Sheet 15 Revision 2.0, 2011-06-09

Basic Application Information 6.3 Dimming of the LEDs Analog Voltage Dimming The voltage level of the EN/PWM pin can be used for analog dimming of the LED current. The analog dimming characteristic graph is shown in Figure 3. To achieve a linear change in LED current versus control voltage the recommended voltage range at the EN/PWM pin is 1 V to 2 V. The maximum achievable LED current is defined by resistor R sense. The maximum LED current will be achieved for V EN 2.5 V as shown in Figure 4. Below 0.4 V the ILD4001 is set to standby mode and the output is switched off. In standby mode ILD4001 doesn t pull low the V drive output signal driving the gate of the external MOSFET. Depending on gate capacitance driven a 10 - kω shunt resistor to GND is required to avoid a floating gate of the MOSFET. Furthermore a gate discharge time of about 1 µs is recommended. 1.6 1.4 1.2 75 mω, 47 μh 110 mω, 68 μh 158 mω, 68 μh I LED [A] 1 0.8 0.6 0.4 0.2 0 1 1.5 2 2.5 3 V EN [V] Figure 3 Analog Voltage Dimming (12V,, T A =25 C) vs. R sense Data Sheet 16 Revision 2.0, 2011-06-09

Basic Application Information I LED [%] 110 90 80 70 60 50 40 30 20 10 0 75 mω, 47 μh 110 mω, 68 μh 158 mω, 68 μh 1 1.5 2 2.5 3 V EN [V] Figure 4 Analog Voltage Dimming (Relative) vs. R sense 1 0.8-40 C 25 C 85 C 105 C I LED [A] 0.6 0.4 0.2 0 1 1.5 2 2.5 3 V EN [V] Figure 5 Analog Voltage Dimming vs. T A (12V,, 110 mω, 47 µh) Data Sheet 17 Revision 2.0, 2011-06-09

Basic Application Information PWM Dimming Besides the analog dimming functionality the EN/PWM pin acts as input for a pulse width modulated (PWM) signal to control the dimming of the LED string. For PWM dimming the signal's logic high level should be at least 2.5 V and the PWM frequency should be lower than 5 khz. For the ILD4035/4001 demo board a dimming frequency less than 330 Hz is recommended to maintain a maximum contrast ratio of :1. The achieveable contrast ratio is shown on Figure 6 based on the measured average LED current deviating 3 db from the linear reference. The maximum contrast ratio depends mainly on the rise time of the inductor current and is thus dependent on supply voltage, inductor size and LED string forward voltage. 0 Contrast Ratio 10 Figure 6 1 0 00 PWM Dimming Frequency [Hz] PWM Dimming: 3 db Deviation of Contrast Ratio to Linear Dimming (12 V, 68 µh, ) During the low state of the PWM signal ILD4001 doesn t pull low the V drive signal. Depending on gate capacitance driven and intended gate discharge time (about 1 µs is recommended) a 10 - kω shunt resistor to GND is required to avoid a floating gate of the MOSFET. 6.4 Switching Parameters For all shown switching parameters ILD4001 has been measured on evaluation board ILD4035/4001 using a BSP318S N-channel MOSFET at T A = 25 C. Used LEDs have a typical V fled of 3 V. See application note AN213 for further details. Data Sheet 18 Revision 2.0, 2011-06-09

Basic Application Information Performance vs. supply voltage and number of LEDs: R sense = 75 mω, L = 33 µh, V fled =3V I LED versus V S and Number of LEDs f Switch versus V S and Number of LEDs 1.8 500 1.7 400 I LED [A] 1.6 1.5 2 LEDs 1.4 1.3 f Switch [khz] 300 200 2 LEDs 0 Efficiency versus V S and Number of LEDs Duty Cycle versus V S and Number of LEDs Efficiency [%] 95 90 85 80 75 2 LEDs 70 65 Duty Cycle [%] 80 60 40 2 LEDs 20 0 Data Sheet 19 Revision 2.0, 2011-06-09

Basic Application Information Performance vs. supply voltage and number of LEDs: R sense = 75 mω, L = 47 µh, V fled =3V I LED versus V S and Number of LEDs f Switch versus V S and Number of LEDs 1.8 500 1.7 400 I LED [A] 1.6 1.5 2 LEDs 1.4 1.3 f Switch [khz] 300 200 2 LEDs 0 Efficiency versus V S and Number of LEDs Duty Cycle versus V S and Number of LEDs Efficiency [%] 95 90 85 80 75 2 LEDs 70 65 Duty Cycle [%] 80 60 40 2 LEDs 20 0 Data Sheet 20 Revision 2.0, 2011-06-09

Basic Application Information Performance vs. supply voltage and number of LEDs: R sense = 158 mω, L = 47 µh, V fled =3V I LED versus V S and Number of LEDs f Switch versus V S and Number of LEDs 1 500 0.9 400 I LED [A] 0.8 0.7 2 LEDs 0.6 0.5 f Switch [khz] 300 200 2 LEDs 0 Efficiency versus V S and Number of LEDs Duty Cycle versus V S and Number of LEDs Efficiency [%] 95 90 85 80 75 2 LEDs 70 65 Duty Cycle [%] 80 60 40 2 LEDs 20 0 Data Sheet 21 Revision 2.0, 2011-06-09

Basic Application Information Performance vs. supply voltage and number of LEDs: R sense = 158 mω, L = 68 µh, V fled =3V I LED versus V S and Number of LEDs f Switch versus V S and Number of LEDs 1 500 0.9 400 I LED [A] 0.8 0.7 2 LEDs 0.6 0.5 f Switch [khz] 300 200 2 LEDs 0 Efficiency versus V S and Number of LEDs Duty Cycle versus V S and Number of LEDs Efficiency [%] 95 90 85 80 75 2 LEDs 70 65 Duty Cycle [%] 80 60 40 2 LEDs 20 0 Data Sheet 22 Revision 2.0, 2011-06-09

Basic Application Information LED current vs. soldering point temperature T S (V S = 12V, V fled =3V, ) I LED versus T S (Rsense = 75 mω, L = 47 µh) I LED versus T S (R sense = 110 mohm, L = 68 µh) 1.8 1.3 1.7 1.2 I LED [A] 1.6 1.5 I LED [A] 1.1 1 1.4 12 V 24 V 42 V 1.3-40 -20 0 20 40 60 80 T S [ C] 0.9 12 V 24 V 42 V 0.8-40 -20 0 20 40 60 80 T S [ C] I LED versus T S (R sense = 158 mω, L = 68 µh) 1 0.9 I LED [A] 0.8 0.7 0.6 12 V 24 V 42 V 0.5-40 -20 0 20 40 60 80 T S [ C] Data Sheet 23 Revision 2.0, 2011-06-09

Application Circuit 7 Application Circuit For detailed application information please check the Application Note AN213 (Driving 2-5 W LEDs with ILD4001) or visit our web site http://www.infineon.com/lowcostleddrivers R sense V S 1 Vstab Vref I / V 6 TSD 2 Vref Vstab Vstab 5 EN / PWM 3 ILD4001 Vstab 4 R g BSR302N / BSP318S Resistor R g is mandatory for V EN < 1 V to avoid a floating gate of the MOSFET ILD4001 _Application circuit.vsd Figure 7 Application Circuit 8 Evaluation Board ILD4001_ Eval_Board.vsd Figure 8 ILD4001 on Evaluation Board Using BSP318S Data Sheet 24 Revision 2.0, 2011-06-09

Package Information 9 Package Information 2.9 ±0.2 (2.25) B (0.35) +0.1 0.15-0.06 1.1 MAX. 6 5 4 ±0.1 ±0.1 ±0.1 Pin 1 marking 1 2 1.9 3 +0.1 0.35-0.05 0.95 0.2 M B 6x 2.5 0.25 0.2 M 0.1 MAX. A 1.6 A SC74-PO V04 Figure 9 Package Outline SC74 0.5 1.9 2.9 0.95 SC74-FPR V04 Figure 10 Recommended PCB Footprint for Reflow Soldering 4 0.2 2.7 8 Pin 1 marking 3.15 1.15 SC74-TP Figure 11 Tape Loading Data Sheet 25 Revision 2.0, 2011-06-09

www.infineon.com Published by Infineon Technologies AG