BC635; BCP54; BCX V, 1 A NPN medium power transistors

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Transcription:

45 V, A NPN medium power transistors Rev. 7 4 June 7 Product data sheet. Product profile. General description NPN medium power transistor series. Table. Product overview Type number [] Package PNP complement NXP JEITA JEDEC BC65 [] SOT54 SC-4A TO-9 BC66 BCP54 SOT SC-7 - BCP5 BCX54 SOT89 SC-6 TO-4 BCX5 [] Valid for all available selection groups. [] Also available in SOT54A and SOT54 variant packages (see Section ).. Features High current Two current gain selections High power dissipation capability. Applications Linear voltage regulators Low side switches MOSFET drivers Amplifiers.4 Quick reference data Table. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V CEO collector-emitter voltage open base - - 45 V I C collector current - - A I CM peak collector current single pulse; t p ms - -.5 A h FE DC current gain V CE =V; I C = 5 ma 6-5 h FE selection - V CE =V; I C = 5 ma 6-6 h FE selection -6 V CE =V; I C = 5 ma - 5

45 V, A NPN medium power transistors. Pinning information Table. Pinning Pin Description Simplified outline Symbol SOT54 base collector emitter aab47 sym56 SOT54A base collector emitter SOT54 variant base collector emitter aab48 aab447 sym56 sym56 SOT base collector 4, 4 emitter 4 collector sym6 SOT89 emitter collector base sym4 Product data sheet Rev. 7 4 June 7 of 5

45 V, A NPN medium power transistors. Ordering information 4. Marking Table 4. Type number [] Ordering information Package Name Description Version BC65 [] SC-4A plastic single-ended leaded (through hole) package; SOT54 leads BCP54 SC-7 plastic surface-mounted package with increased SOT heatsink; 4 leads BCX54 SC-6 plastic surface-mounted package; collector pad for good heat transfer; leads SOT89 [] Valid for all available selection groups. [] Also available in SOT54A and SOT54 variant packages (see Section and Section 9). Table 5. Marking codes Type number BC65 BC65-6 BCP54 BCP54- BCP54-6 BCX54 BCX54- BCX54-6 Marking code C65 C656 BCP54 BCP54/ BCP54/6 BA BC BD Product data sheet Rev. 7 4 June 7 of 5

45 V, A NPN medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 64). Symbol Parameter Conditions Min Max Unit V CBO collector-base voltage open emitter - 45 V V CEO collector-emitter voltage open base - 45 V V EBO emitter-base voltage open collector - 5 V I C collector current - A I CM peak collector current single pulse; -.5 A t p ms I BM peak base current single pulse; -. A t p ms P tot total power dissipation T amb 5 C BC65 [] -.8 W BCP54 [] -.64 W [] -.96 W BCX54 [] -.5 W [] -.85 W [] -.5 W T j junction temperature - 5 C T amb ambient temperature 65 +5 C T stg storage temperature 65 +5 C [] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector cm. [] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm. Product data sheet Rev. 7 4 June 7 4 of 5

45 V, A NPN medium power transistors.6 6aaa85.6 6aaa86 P tot (W) P tot (W).. ().8.8 ().4.4 75 5 5 75 5 75 T amb ( C) 75 5 5 75 5 75 T amb ( C) FR4 PCB, standard footprint () FR4 PCB, mounting pad for collector cm () FR4 PCB, standard footprint Fig. Power derating curve SOT54 Fig. Power derating curves SOT.6 6aaa87 P tot (W). ().8 () ().4 75 5 5 75 5 75 T amb ( C) () FR4 PCB, mounting pad for collector 6 cm () FR4 PCB, mounting pad for collector cm () FR4 PCB, standard footprint Fig. Power derating curves SOT89 Product data sheet Rev. 7 4 June 7 5 of 5

45 V, A NPN medium power transistors 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient in free air BC65 [] - - 5 K/W BCP54 [] - - 95 K/W [] - - K/W BCX54 [] - - 5 K/W [] - - 45 K/W [] - - K/W R th(j-sp) thermal resistance from junction to solder point BC65 - - 4 K/W BCP54 - - 7 K/W BCX54 - - K/W [] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector cm. [] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm. 6aaa88 Z th(j-a) (K/W) duty cycle =.75.5....5.. 5 4 t p (s) Fig 4. FR4 PCB, standard footprint Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54; typical values Product data sheet Rev. 7 4 June 7 6 of 5

45 V, A NPN medium power transistors Z th(j-a) (K/W) duty cycle =..75.5....5.. 6aaa84 5 4 t p (s) Fig 5. FR4 PCB, standard footprint Transient thermal impedance from junction to ambient as a function of pulse duration for SOT; typical values 6aaa89 Z th(j-a) (K/W) duty cycle =.75.5....5.. 5 4 t p (s) Fig 6. FR4 PCB, mounting pad for collector cm Transient thermal impedance from junction to ambient as a function of pulse duration for SOT; typical values Product data sheet Rev. 7 4 June 7 7 of 5

45 V, A NPN medium power transistors Z th(j-a) (K/W) duty cycle =..75.5....5.. 6aaa85 5 4 t p (s) Fig 7. FR4 PCB, standard footprint Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 6aaa9 Z th(j-a) (K/W) duty cycle =.75.5....5.. 5 4 t p (s) Fig 8. FR4 PCB, mounting pad for collector cm Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values Product data sheet Rev. 7 4 June 7 8 of 5

45 V, A NPN medium power transistors Z th(j-a) (K/W) duty cycle =..75.5....5.. 6aaa86 5 4 t p (s) Fig 9. FR4 PCB, mounting pad for collector 6 cm Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 7. Characteristics Table 8. Characteristics T amb =5 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit I CBO collector-base cut-off current [] Pulse test: t p µs; δ =.. V CB =V; I E = A - - na V CB =V; I E =A; - - µa T j = 5 C I EBO emitter-base cut-off V EB =5V; I C = A - - na current h FE DC current gain V CE =V I C = 5 ma 6 - - I C = 5 ma 6-5 I C = 5 ma [] 4 - - DC current gain V CE =V h FE selection - I C = 5 ma 6-6 h FE selection -6 I C = 5 ma - 5 V CEsat collector-emitter I C = 5 ma; I B =5mA [] - - 5 mv saturation voltage V BE base-emitter voltage V CE =V; I C = 5 ma [] - - V C c collector capacitance V CB =V;I E =i e =A; - 6 - pf f=mhz f T transition frequency V CE =5V; I C =5mA; f = MHz 8 - MHz Product data sheet Rev. 7 4 June 7 9 of 5

45 V, A NPN medium power transistors h FE 6aaa8 I C (A).6 I B (ma) = 5 45 4 5 6aaa84 (). 5 5 ().8 ().4 5 4 I C (ma) V CE =V () T amb = 5 C () T amb =5 C () T amb = 55 C Fig. DC current gain as a function of collector current; typical values.4.8..6. V CE (V) T amb =5 C Fig. Collector current as a function of collector-emitter voltage; typical values. 6aaa8 6aaa8 V BE (V).8 () V CEsat (V) ().4 () () () () 4 I C (ma) V CE =V () T amb = 55 C () T amb =5 C () T amb = 5 C Fig. Base-emitter voltage as a function of collector current; typical values 4 I C (ma) I C /I B = () T amb = 5 C () T amb =5 C () T amb = 55 C Fig. Collector-emitter saturation voltage as a function of collector current; typical values Product data sheet Rev. 7 4 June 7 of 5

45 V, A NPN medium power transistors 8. Package outline 4..6 4.8 4.4.48.4.45.8.7.54 4..6 4.8 4.4 max.48.4.45.8.54 5.8 5. 5. 4.5.7 5. 5. 4.5.7 Dimensions in mm 4--6 Dimensions in mm 4-6-8 Fig 4. Package outline SOT54 (SC-4A/TO-9) Fig 5. Package outline SOT54A 4..6.45.8.7 6.7 6...9 4.8.5 4.8 4.4.5 max.48.4.54.7 7. 6.7.7...7 5. 5. Dimensions in mm 4.5.7 5-- Dimensions in mm. 4.6.8.6.. 4-- Fig 6. Package outline SOT54 variant Fig 7. Package outline SOT (SC-7) 4.6 4.4.8.4.6.4.6.4 4.5.75 Dimensions in mm.5.4.5.48.5..8.44. 6-8-9 Fig 8. Package outline SOT89 (SC-6/TO-4) Product data sheet Rev. 7 4 June 7 of 5

45 V, A NPN medium power transistors 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the NC ordering code. [] Type number [] Package Description Packing quantity 4 5 BC65 SOT54 bulk, straight leads - - -4 - SOT54A tape and reel, wide pitch - - - -6 tape ammopack, wide pitch - - - -6 SOT54 variant bulk, delta pinning - - - - BCP54 SOT 8 mm pitch, mm tape and reel -5-5 - - BCX54 SOT89 8 mm pitch, mm tape and reel; T [] -5-5 - - 8 mm pitch, mm tape and reel; T [4] - - - - [] For further information and the availability of packing methods, see Section. [] Valid for all available selection groups. [] T: normal taping [4] T: 9 rotated taping Product data sheet Rev. 7 4 June 7 of 5

45 V, A NPN medium power transistors. Revision history Table. Revision history Document ID Release date Data sheet status Change notice Supersedes 764 Product data sheet - BC65_BCP54_BCX54_6 Modifications: Table Product overview : amended Section. Features : amended Section. Applications : amended Table Quick reference data : I C parameter redefined to collector current Table Quick reference data : I CM condition added Figure and : amended Table 6 Limiting values : I C parameter redefined to collector current Table 6 Limiting values : I CM condition added Table 6 Limiting values : P tot values for BCP54 and BCX54 adapted Table 7 Thermal characteristics : R th(j-a) values for BCP54 and BCX54 rounded Figure 4: Z th redefined to Z th(j-a) transient thermal impedance from junction to ambient Figure 4: t p parameter redefined to pulse duration Figure 5: added Figure 6: Z th redefined to Z th(j-a) transient thermal impedance from junction to ambient Figure 6: t p parameter redefined to pulse duration Figure 7: added Figure 8: Z th redefined to Z th(j-a) transient thermal impedance from junction to ambient Figure 8: t p parameter redefined to pulse duration Figure 9: added Figure : amended Table 9 Packing methods : new packing method for BCX54 added Section Legal information : updated BC65_BCP54_BCX54_6 55 Product data sheet CPCN459 BC65_67_69_4 BCP54_55_56_5 BCX54_55_56_4 BC65_67_69_4 Product specification - BC65_67_69_ BCP54_55_56_5 6 Product specification - BCP54_55_56_4 BCX54_55_56_4 Product specification - BCX54_55_56_ Product data sheet Rev. 7 4 June 7 of 5

45 V, A NPN medium power transistors. Legal information. Data sheet status Document status [][] Product status [] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [] The term short data sheet is explained in section Definitions. [] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.. Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.. Disclaimers General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 64) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights..4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Product data sheet Rev. 7 4 June 7 4 of 5

45 V, A NPN medium power transistors. Contents Product profile........................... General description....................... Features............................... Applications............................4 Quick reference data..................... Pinning information...................... Ordering information..................... 4 Marking................................ 5 Limiting values.......................... 4 6 Thermal characteristics................... 6 7 Characteristics.......................... 9 8 Package outline........................ 9 Packing information..................... Revision history........................ Legal information....................... 4. Data sheet status...................... 4. Definitions............................ 4. Disclaimers........................... 4.4 Trademarks........................... 4 Contact information..................... 4 Contents.............................. 5 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 4 June 7 Document identifier:

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