ATF-511P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm 2 LPCC [3] Package Data Sheet Description Avago Technologies s ATF-511P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDECstandard leadless plastic chip carrier (LPCC [3] ) package. The device is ideal as a high linearity, low-noise, mediumpower amplifier. Its operating frequency range is from MHz to 6 GHz. The thermally efficient package measures only 2 mm x 2 mm x.75 mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over years at a mounting temperature of +85 C. All devices are % RF & DC tested. 1. Enhancement mode technology employs a single positive V gs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N.. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Pin Connections and Package Marking Pin 8 Pin 7 (Drain) Pin 6 Pin 5 Pin 1 (Source) Pin 2 (Gate) Pin 3 Source (Thermal/RF Gnd) Bottom View 1Px Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin (Source) Pin 8 Pin 7 (Drain) Pin 6 Features Single voltage operation High linearity and P1dB Low noise figure Excellent uniformity in product specifications Small package size: 2. x 2. x.75 mm Point MTTF > years [2] MSL-1 and lead-free Tape-and-reel packaging option available Specifications 2 GHz;.5V, ma (Typ.) 1.7 dbm output IP3 dbm output power at 1 db gain compression 1. db noise figure 1.8 db gain 12.1 db LFOM [] 69% PAE Applications Front-end LNA Q2 and Q3 driver or pre-driver amplifier for Cellular/PCS and WCDMA wireless infrastructure Driver amplifier for WLAN, WLL/RLL and MMDS applications General purpose discrete E-pHEMT for other high linearity applications Pin (Source) Top View Pin 5 Note: Package marking provides orientation and identification: 1P = Device Code x = Date code indicates the month of manufacture.
ATF-511P8 Absolute Maximum Ratings [1] Absolute Symbol Parameter Units Maximum V DS Drain Source Voltage [2] V 7 V GS Gate Source Voltage [2] V -5 to 1 V GD Gate Drain Voltage [2] V -5 to 1 Drain Current [2] A 1 I GS Gate Current ma 6 P diss Total Power Dissipation [3] W 3 P in max. RF Input Power [] dbm + T CH Channel Temperature C 1 T STG Storage Temperature C -65 to 1 ch_b Thermal Resistance [5] C/W 33 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Board (package belly) temperaturet B is C. Derate mw/ C for T B > C.. With Ohm series resistor in gate supply and 3:1 VSWR. 5. Channel-to-board thermal resistance measured using 1 C Liquid Crystal Measurement method. 6. Device can safely handle +dbm RF Input Power provided I GS limited to 6mA. I GS at P 1dB drive level is bias circuit dependent. Product Consistency Distribution Charts at 2 GHz,.5V, ma [6,7].8 V 9 8.7 V 7 6.6 V.5 V 2 6 8 V DS (V) Figure 1. Typical I-V Curves (V gs =.1 per step). 2 16 1 8-3 Std +3 Std Cpk = 1.66 Stdev =.6 38 1 7 OIP3 (dbm) Figure 2. OIP3 LSL = 38.5, Nominal = 1.7. 16 1 8 Cpk = 3.2 Stdev =. -3 Std +3 Std 28 29 31 P1dB (dbm) Figure 3. P1dB LSL = 28.5, Nominal =. 1 16 1 Cpk = 1. Stdev =.31 1 Cpk = 3.3 Stdev = 1.85 9-3 Std +3 Std 8-3 Std +3 Std 6 13 1 16 17 GAIN (db) Figure. Gain LSL = 13.5, Nominal = 1.8, USL = 16.5. 52 57 62 67 72 77 82 PAE (%) Figure 5. PAE LSL = 52, Nominal = 68.9. 6. Distribution data sample size is samples taken from different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements are made on production test board, which represents a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 2
ATF-511P8 Electrical Specifications T A = C, DC bias for RF parameters is Vds =.5V and Ids = ma unless otherwise specified. Symbol Parameter and Test Condition Units Min. Typ. Max. Vgs Operational Gate Voltage Vds =.5V, Ids = ma V..51.8 Vth Threshold Voltage Vds =.5V, Ids = 32 ma V.28 Idss Saturated Drain Current Vds =.5V, Vgs = V μa 16. Gm Transconductance Vds =.5V, Gm = Idss/ Vgs; mmho 2178 Vgs = Vgs1 Vgs2 Vgs1 =.55V, Vgs2 =.5V Igss Gate Leakage Current Vds = V, Vgs = -.5V μa -27-2 NF Noise Figure [1] f = 2 GHz db 1. f = 9 MHz db 1.2 G Gain [1] f = 2 GHz db 13.5 1.8 16.5 f = 9 MHz db 17.8 OIP3 Output 3 rd Order Intercept Point [1,2] f = 2 GHz dbm 38.5 1.7 f = 9 MHz dbm 3 P1dB Output 1dB Compressed [1] f = 2 GHz dbm 28.5 f = 9 MHz dbm 29.6 PAE Power Added Efficiency f = 2 GHz % 52 68.9 f = 9 MHz % 68.6 ACLR Adjacent Channel Leakage Offset BW = 5 MHz dbc -58.9 Power Ratio [1,3] Offset BW = MHz dbc -62.7 1. Measurements obtained using production test board described in Figure 6 and PAE tested at P1dB condition. 2. I ) 2 GHz OIP3 test condition: F1 = 2. GHz, F2 = 2.1 GHz and Pin = -5 dbm per tone. II ) 9 MHz OIP3 test condition: F1 = 9 MHz, F2 = 9 MHz and Pin = -5 dbm per tone. 3. ACLR test spec is based on 3GPP TS.11 V5.3.1 (2-6) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 6 DPCH (SF=128) - Freq = 21 MHz - Pin = -5 dbm - Channel Integrate Bandwidth = 3.8 MHz. Use proper bias, board, heatsink and derating designs to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application note for more details. Input Ohm Transmission Line and Gate Bias T (.3 db loss) Input Matching Circuit Γ_mag =.69 Γ_ang = -16 (1.1 db loss) DUT Output Matching Circuit Γ_mag =.65 Γ_ang = -163 (.9 db loss) Ohm Transmission Line and Drain Bias T (.3 db loss) Output Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3, P1dB and PAE and ACLR measurements. This circuit achieves a tradeoff between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements. 3
RF Input 1.8 nh 2.7 nh 1.2 pf Ohm 1 Ohm 1 Ohm Ohm.2 λ.3 λ.3 λ.2 λ 1.2 pf DUT RF Output nh 2.2 μf Gate DC Supply Ohm 2.2 μf 7 nh Drain DC Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown. Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions The device s optimum OIP3 and P1dB measurements were determined using a load pull system at.5v, ma quiesent bias: Optimum OIP3 Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE (GHz) Mag Ang Mag Ang (dbm) (db) (dbm) (%).9.776 2.59-178 3.3 17.9 29.63 63.8 2..872-171.683-179 3.1.6.12 66.8 2..893-162.7-17 2.8 1.3 29.9 6.5 3.9.765-132.57-1 1.7 9.7 29.2 52 Optimum P1dB Freq Gamma Source Gamma Load OIP3 Gain P1dB PAE (GHz) Mag Ang Mag Ang (dbm) (db) (dbm) (%).9.773 3.78-173 38. 19.28 31.9 5.23 2..691 17.81-166 36..3 31. 38. 2..797 16.827-166 36.2 8.3 31.2 37.38 3.9.62-163.79-5. 7.3 31 32.72
ATF-511P8 Typical Performance Curves (at C unless specified otherwise) Tuned for Optimal OIP3 at.5v ma 5 5 OIP3 (dbm) OIP3 (dbm) P1dB (dbm) 1 2 3 Figure 8. OIP3 vs. 5 1 2 3 Figure 9. OIP3 vs. at 9 MHz. 5 1 2 3 Figure. P1dB vs. 5 17 16 19 18 P1dB (dbm) GAIN (db) 1 13 GAIN (db) 17 16 12 11 1 1 2 3 Figure 11. P1dB vs. at 9 MHz. 5 1 2 3 Figure 12. Gain vs. 5 13 1 2 3 Figure 13. Gain vs. at 9 MHz. 5 8 8 PAE (%) 7 6 PAE (%) 7 6 OIP3 (dbm) 5 - C C 1 2 3 Figure 1. PAE vs. 5 1 2 3 Figure. PAE vs. at 9 MHz. 5.5 Figure 16. OIP3 vs. Temp and Freq. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 5
ATF-511P8 Typical Performance Curves, continued (at C unless specified otherwise) Tuned for Optimal OIP3 at.5v, ma 8 7 6 P1dB (dbm) - C C GAIN (db) 5 - C C PAE (%) - C C.5 Figure 17. P1dB vs. Temp and Freq..5 Figure 18. Gain vs. Temp and Freq..5 Figure 19. PAE vs. Temp and Freq. ATF-511P8 Typical Performance Curves (at C unless specified otherwise) Tuned for Optimal P1dB at, ma 5 5 OIP3 (dbm) OIP3 (dbm) P1dB (dbm) 1 2 3 Figure. OIP3 vs. 5 1 2 3 Figure 21. OIP3 vs. at 9 MHz. 5 1 2 3 Figure 22. P1dB vs. 5 12 22 P1dB (dbm) GAIN (db) 8 6 2 GAIN (db) 18 16 1 12 1 2 3 5 1 2 3 5 1 2 3 5 Figure 23. P1dB vs. at 9 MHz. Figure 2. Gain vs. Figure. Gain vs. at 9 MHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 6
ATF-511P8 Typical Performance Curves, continued (at C unless specified otherwise) Tuned for Optimal P1dB at.5v, ma 7 5 6 PAE (%) PAE (%) OIP3 (dbm) - C C 1 2 3 5 1 2 3 5.5 Figure 26. PAE vs. Figure 27. PAE vs. at 9 MHz. Figure 28. OIP3 vs. Temp and Freq. 7 6 P1dB (dbm).5 - C C Figure 29. P1dB vs. Temp and Freq. GAIN (db) 5.5 - C C Figure. Gain vs. Temp and Freq. PAE (%).5 - C C Figure 31. PAE vs. Temp and Freq. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. 7
ATF-511P8 Typical Scattering Parameters, V DS =.5V, = ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db.1.9-13.9 31.16 36. 111.2-38.53.1 29.7.73-16.5 3.79.2.93-7.7.6 19.1 99.2-37.87.1 21.8.76-173.7 31.68.3.93-166.6 22.26 12.97 9.2-37.61.1 21.1.78-176.8 29.99..93-171.8 19.78 9.7 9.9-37.9.1 23..78-179.9 28.3.5.92-173.9 18.7 8.6 88.9-36..1..75 178.9 27.31.6.93-176.9 17.12 7.18 86.1 -.8.1 27..75 176.9 26.52.7.92-178.8.78 6. 8.3 -.1.1 29.5.75 175.5.59.8.93 178.7 1.61 5.37 82.3 -.11.1 32.5.76 17. 2.75.9.92 177.1 13.58.77 8.6 -..1 33.1.75 172.8 2.2 1.93 175.7 12.6.28 79.1-3.6.1..76 171.6 23.53 1.5.93 168.7 8.99 2.81 71. -32.7.2..76 166..88 2.93 163. 6.36 2.8 6.2-31.27.2 2.3.76 16.6 17. 2.5.92 7.8. 1.66 57.2-29.9.3 2.5.76 5.5 1.71 3.92 2.5 2.73 1.36. -28.59.3 1.6.75 19.7 12.65.92 12.8.3 1. 37.6-26.69..7.7 138.6 9.96 5.91 133.2-2.17.77 2.2 -..5 29.8.71 127.2 7.23 6.91 12.6 -.21.61 1.1-2.32.6 23.7.65 117.2.97 7.91 1.7-5.8.51 5.6-23.8.6 19.5.59 111.3 3.2 8.91 6. -6.82.5-2.6-22.9.7 1.1.56 8.2 1.86 9.91 95.5-7.36.2 -.2-21.39.8 8.5.58 3.7 1.19.9 85.2-7.98. -22.2 -..9..6 96..53 11.89 7.3-8.69.38-29.1-19.72. -8..63 87.2 -. 12.89 63. -9.. -.1-19.2. -17.1.65 77.6 -.61 13.89 5.1-9.8.32-51.7-19.12.11-23.9.67 68.2-1. 1.9 6.3 -..31-55.2-18.65.11-29.7.69 58.7-1.13.9.6 -.86. -57.3-18.57.11 -.8.69.1-1.88 16.89 33.3-11.16.32-71.1-18.2.12-2.3.71 1.8-2.26 17.83. -11.81.2-75.3-17.65.13-7.1.73.1-3.17 18.86. -12.7.2-9.5-17.3.13-53.1.76 27.7-3.76 MSG/MAG & S21 2 (db) - MSG S21 MAG 1. S parameter is measured on a microstrip line made on. inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. - 5 Figure 32. MSG/MAG & S21 2 (db) @.5V, ma. 8
ATF-511P8 Typical Scattering Parameters, V DS =.5V, = ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db.1.9-132.6 31.26 36.5 112.1-37..1 27.2.7-161. 3.9.2.93-6.3.79 19.7 99.6-36.68.1 19.2.7-171.6 31.13.3.9-165.6 22. 13.18 9. -36.7.1 19.9.76-175.6 29...93-17.8 19.93 9.92 91.1-36.17.1 19.9.76-178.8 27.93.5.92-173.1 18.8 8.75 89. -.11.1 2.6.73 179.9 26.87.6.92-176.2 17.26 7.29 86.2-3.8.1 23.9.73 177.8 26.8.7.92-178.2.92 6. 8.3-3.72.1.6.73 176.2.1.8.92 179. 1.76 5.7 82.3-3.37.1 27.6.7 17.7 2.59.9.93 177. 13.72.85 8. -3.2.2 28.6.7 173. 23.85 1.92 176. 12.77.3 79.1-33.71.2.8.7 172.2 23.16 1.5.93 168.9 9.13 2.86 7.9-32..2..7 166.5.59 2.93 163.6 6.9 2.11 63.7 -.97.2 38.2.7 161.1 17. 2.5.92 7.9. 1.67 56.8-29.65.3 39.1.7 5.9 1.78 3.93 2.6 2.81 1.38 9.3-28.5.3 38.1.7 1.2 13.16.91 13.1.16 1.1.8-26.68. 33.9.73 139. 9.8 5.91 133.7-2.8.78 22.7 -..5 28..7 127. 7.3 6.91 12.7 -.2.62 12. -2.2.6 22.3.65 117. 5.1 7.9 1.7-5.75.51 3.3-23.61.6 18.2.58 1.2 2.77 8.9 5.6-6.77.5-3.9-22.73.7 1..5 7.5 1.56 9.91 95.7-7.5.2-12.1-21.6.8 8..55 3.9 1.13.91 8.9-7.95. -22. -.76.9.9.58 97..82 11.89 7. -8.29.38-32. -19.93. -8.6.61 88. -.5 12.89 63.1-9.19.3-39.5-19.5. -16.8.6 78.9 -.82 13.89 5. -9.7.326-51.1-19.3.11-2.1.67 69.1-1.38 1.9 6. -.17.31-58.1-18.78.11 -.7.68 59.6-1.33.9 38.8 -.85.28-67.8-18.7.11-36.1.68.9-1.8 16.91 33.1 -.77.28-73.7-18.19.12-2.9.71 2. -2.11 17.85 26.8-11.5.28-83.3-17.88.12-7.5.73.3-2.6 18.87 19.3-11.53.26 -. -17.5.13-53.8.75 27.3-2.83 MSG/MAG & S21 2 (db) - MSG S21 MAG 1. S parameter is measured on a microstrip line made on. inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. - 5 Figure 33. MSG/MAG & S21 2 (db) @.5V, ma. 9
ATF-511P8 Typical Scattering Parameters, V DS =.5V, = ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db.1.93-1..99.3 1.3-3.72.1 28.6.65-1.1 32.9.2.93-2.1.7 19.27 1. -33.88.2 18.9.7-166.3 29.8.3.93-162.8 22.3 13.9 95.5-33.7.2.5.72-172.2 27.95..92-168.7 19.9 9.88 91.8-33.9.2 16.5.72-176. 26.73.5.91-17.8 18.78 8.68 89.5-32..2 17.7.69-177.2.59.6.91-17. 17.21 7. 86.6-32.2.2 17.6.7-179.7 2.8.7.92-176.8.88 6.22 8. -32..2 19.1.7 178.3 23.96.8.92-179. 1.72 5. 82.3-32.13.2 18.8.7 176.6 23.38.9.92 178.7 13.69.83 8. -32.2.2 18.9.7 175.2 22.86 1.91 177. 12.73.33 78.8-31.85.2.6.7 173.8 22.22 1.5.92 169.8 9.11 2.85 7.2 -.95.2 2.8.7 167.8.8 2.91 163.9 6.9 2.11 62.8 -..3 27.8.71 162.3 18.19 2.5.91 8.8.52 1.68 55.2-29.22.3 29..71 7.2 1.8 3.91 3. 2.89 1.39 7.7-28.39.3 29..71 1.6 12.76.91 13.7. 1.2 33.1-26.77. 27.2.7 1. 9.92 5.91 13. -2.8.78 19.2 -.62.5 22.2.68 128.7 7.2 6.9 1. -..61 7.3-2.73.5 17.3.6 117..79 7.9 1.7-6..9-1.6-23.99.6 1.3.56 9.1 2.5 8.9 6. -7..2-7.7-23.23.6 11.2.51 6..71 9.9 96.5-8.1.39-16. -22..7 7.2.51 5..1.9 86.1-8.5.37 -.3 -.89.9.5.5 99.3 -.37 11.89 75. -9.6.33 -.2 -.8.9-7.5.58 9.9-1.33 12.9 63.8-9.59.33-6.1-19.1. -16.7.62 81.3-1.6 13.89 5.7 -.2. -52.9-19.2.11 -.1.65 71.3-1.93 1.9 6.5 -.99.28-59.8-18.87.11-31.7.67 61. -2.12.88.2-11..27-7.6-18.71.11-38.2.68 52. -2.66 16.9 33.5-11..26-71.7-18.22.12-5.5.7 3.3-2.83 17.86 26. -11..26-8.8-18.28.12-9..72.9-3.33 18.86 19.3-11.51.26-92.6-17.88.12-5.8.7 27.9-3.69 MSG/MAG & S21 2 (db) - MSG S21 MAG 1. S parameter is measured on a microstrip line made on. inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. - 5 Figure 3. MSG/MAG & S21 2 (db) @.5V, ma.
ATF-511P8 Typical Scattering Parameters, V DS = V, = ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db.1.9-133.7.85 3.87 111. -37.28.1 28.2.73-162.5 33.96.2.93-6.9.31 18.1 99.5-36.61.1..76-172.6.89.3.93-165.9 21.89 12.3 9.2-36.19.1.2.78-176.3 28.9..9-17.9 19.8 9.2 9.9 -.98.1..78-179.5 27.7.5.93-17.5 17.53 7.52 88.8 -.8.1 23..78 178.5 26.73.6.93-175.8 16.77 6.89 86. -3.69.1 23.5.76 177.3.83.7.93-178.2.53 5.97 8.2-3.2.1..75 175.5 2.98.8.92 179.7 1.28 5.17 82.5-3.11.2 27.1.76 173.9 2.13.9.92 178. 13.21.57 8.5-33.77.2 29.2.76 172.5 23.6 1.93 176.3 12.3.13 78.6-33.66.2 29.6.76 171. 22.95 1.5.92 169.6 8.63 2.7 71. -32.21.2 3.5.76 165.3.3 2.93 16. 6.12 2.2 63.5 -.69.2 38..76 9.2 17.32 2.5.92 9.6.7 1.59 57. -29.6.3 39..76.1 1.52 3.92.2 2. 1..3-28.7.3 37.7.75 18.6 12.3.92 1.9 -.31.96 37. -26.8. 33.8.73 137.1 9.75 5.91 1.5-2.55.7. -.1.5 28..69 127.3 6.7 6.92 126.6 -..6.1-2..6 23..6 119. 5.17 7.91 117.1-5.6.52 6. -23..6 18.3.62 11.5 3.27 8.91 8.2-6.81.5-2.8-22.6.7 12.3.62 8.5 2.3 9.9 99.1-7.13. -13.7-21..8 5.2.62.8 1.6.92 89.2-7.76. -21.2 -..9-2.7.6 9. 1. 11.9 79.6-8.39.38 -. -19.67. -11..65 79.3.26 12.91 7.9-8.92. -2.9-19.28. -19.9.66 67.. 13.9 62.2-9.2.33-8.9-19.11.11-27.2.67 57.1 -.69 1.9 53.8-9.8.32-6.1-18.86.11-33.1.68 8.7-1..87 5. -.51.29-68.5-18.58.11-38..7. -1.56 16.89 37.7 -.7.29-72. -18.59.11-3.7.71 36.3-1.97 17.89.5 -.3.31-85.1-17.88.12-8.3.73 28.8-2. 18.88. -11.77. -91.8-17.72.13-59..7 19.5-2.82 MSG/MAG & S21 2 (db) - MSG S21 MAG 1. S parameter is measured on a microstrip line made on. inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. - 5 Figure. MSG/MAG & S21 2 (db) @ V, ma. 11
ATF-511P8 Typical Scattering Parameters, V DS = 3V, = ma Freq. S 11 S 21 S 12 S 22 MSG/MAG GHz Mag. Ang. db Mag. Ang. db Mag. Ang. Mag. Ang. db.1.95-137.1 29.51 29.89 9.9-36.88.1.2.78-166. 33.29.2.9-9. 23.89.65 98.7-36.27.1 19.8.81-17.5.18.3.9-167.3.6.5 93.8-36..1 18..82-177.6 28.7..9-172. 18. 7.98 9.7 -.82.1.5.83 179. 26.98.5.93-175.3 16. 6.38 88.7 -.59.1 22..83 177.6.75.6.93-176.8.36 5.86 85.9-3.3.1 2..81 176.3 2.89.7.93-178.7 1.1 5.9 8.2-3.27.1 2.8.81 17.6 2.28.8.93 179.1 12.87. 82.6-3.12.2 27.1.81 173.1 23.2.9.93 177.3 11.82 3.89 8.6-33.66.2 29.1.81 171.7 22.69 1.93 176.1.91 3.51 78.9-33.55.2 29.3.81 17.7 22.23 1.5.93 169. 7.2 2. 71.8-31.97.2..81 16.6 19.6 2.93 16..75 1.72 6.7 -.6.3 38.5.81 8.5 16.3 2.5.93 9.1 2.73 1.36 58.5-29.39.3 38.5.81 3. 1.8 3.92..93 1.11 51.6-28..3 37..8 17.6 11.72.93 1.8-1.58.83 38.7-26.26. 33.1.78 1.8 9.2 5.92 1.2-3.78.6 27.3-2.91.5 27.7.7 1. 6.28 6.93 126. -5.5.52 17.2-2.5.6 22.1.68 1.6.39 7.91 116.6-7.7..5-23.11.7 17.2.63 1.7 1.96 8.91 7. -7.66.1 2.6-22.8.7 12.1.62 6.3 1.32 9.9 98. -8.6.39-5.6-21..8 5..63 99.5.6.92 89. -8.99. -.9 -.23.9-2.7.6 89.8.9 11.92 79.5-9.12. -.8-19.5. -12..66 78.7.19 12.91 7.1-9.28.3 -.9-19.8.11-21..68 66.3 -.19 13.91 61.9-9.71.32-39.9-18.93.11-29.2.69 56. -.68 1.92 51.8 -..31-5.7-18.89.11 -.6.7 7.9 -..88.1 -.1.31-59.8-18.63.11 -.7.72 39. -1.57 16.87 36. -.16.31-77.5-18.83.11 -.7.73.3-1.85 17.83.1 -.61.31-87.2-18.17.12-51.2.7 27.7-2.2 18.85 2. -11.96. -97. -17.69.13-58.3.75 18.3-3.71 MSG/MAG & S21 2 (db) - MSG S21 MAG 1. S parameter is measured on a microstrip line made on. inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. - 5 Figure 36. MSG/MAG & S21 2 (db) @ 3V, ma. 12
Device Models Refer to Avago s Web Site www.avagotech.com/view/rf Ordering Information Part Number No. of Devices Container ATF-511P8-TR1 7 Reel ATF-511P8-TR2 13 Reel ATF-511P8-BLK antistatic bag 2 x 2 LPCC (JEDEC DFP-N) Package Dimensions D1 P pin1 pin1 D 1 8 E1 R e 2 3 1PX 7 6 E 5 L b Bottom View Top View A A1 A2 A Side View End View DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e P L MIN..7.3 REF.2 1.9.65 1.9 1.5. BSC.. NOM..75.2.3 REF. 2..8 2. 1.6. BSC.. MAX..8.5.3 REF.275 2.1.95 2.1 1.75. BSC..5 DIMENSIONS ARE IN MILLIMETERS 13
PCB Land Pattern and Stencil Design 2.8 (1.2) 2.72 (7.9).7 (27.56).63 (2.8). (9.8).22 (8.86) PIN 1. (9.8) PIN 1.32 (12.79) φ. (7.87). (19.68). (19.68) Solder mask +.28 (.83) 1.6 (62.99). (9.7) 1.5 (6.61) RF transmission line.8 (31.). (5.91).6 (23.62).72 (28.).63 (2.8).55 (21.65) PCB Land Pattern (top view) Stencil Layout (top view) Typical stencil thickness is 5 mils. Measurements are in millimeters (mils). Device Orientation REEL mm 8 mm 1PX 1PX 1PX 1PX CARRIER TAPE USER FEED DIRECTION COVER TAPE 1
Tape Dimensions D P P P 2 E W F + + D 1 t 1 T t Max K Max A B DESCRIPTION SYMBOL SIZE (mm) SIZE (inches) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A B K P D 1 2. ±.5 2. ±.5 1. ±.5. ±. 1. +..91 ±..91 ±..39 ±.2.7 ±..39 +.2 PERFORATION DIAMETER PITCH POSITION D P E 1. ±.. ±. 1.75 ±..6 ±..7 ±..69 ±. CARRIER TAPE WIDTH THICKNESS W t 1 8. +..3 ±.12 8...3 ±.. ±.2. ±.8 COVER TAPE WIDTH TAPE THICKNESS C 5. ±. T t.62 ±.1.5 ±.. ±. DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3. ±.5.138 ±.2 CAVITY TO PERFORATION (LENGTH DIRECTION) P 2 2. ±.5.79 ±.2 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 12 Avago Technologies. All rights reserved. Obsoletes 5989-3EN AV2-36EN - June 1, 12