AOT46 NChannel Enhancement Mode Field Effect Transistor General escription The AOT46/L uses advanced trench technology and design to provide excellent R S(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. AOT46and AOT46L are electrically identical. RoHS Compliant Halogen Free Features V S (V) = 6V I = 85 A (V GS = V) R S(ON) < 7.5mΩ (V GS = V) % UIS Tested! Top View TO Bottom View G S S G G S Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol Maximum rainsource Voltage 6 GateSource Voltage Continuous rain Current G Pulsed rain Current C Avalanche Current C 8 Repetitive avalanche energy L=.mH C 3 Power issipation B T C =5 C T C = C T C =5 C T C = C Junction and Storage Temperature Range V S V GS I 85 66 I M I AR E AR P T J, T STG ± 34 68 34 55 to 75 Units V V A A mj W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum JunctiontoAmbient A SteadyState R θja 45 6 C/W Maximum JunctiontoCase B SteadyState R θjc.45.56 C/W
AOT46 Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV SS rainsource Breakdown Voltage I =5uA, V GS =V 6 V I SS Zero Gate Voltage rain Current T J =55 C 5 I GSS GateBody leakage current V S =V, V GS =±V na V GS(th) Gate Threshold Voltage V S =V GS, I =5µA.95 4 V I (ON) On state drain current V GS =V, V S =5V 34 A R S(ON) Static rainsource OnResistance V S =6V, V GS =V V GS =V, I =3A 6.3 7.5 T J =5 C.5 3 g FS Transconductance V S =5V, I =3A 9 S V S iode Forward Voltage I S =A, V GS =V.7 V I S Maximum Bodyiode Continuous Current G 85 A YNAMIC PARAMETERS C iss Input Capacitance 38 456 pf C oss Output Capacitance V GS =V, V S =3V, f=mhz 43 pf C rss Reverse Transfer Capacitance 9 pf R g Gate resistance V GS =V, V S =V, f=mhz.5.3 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 68 88 nc Q g (4.5V) Total Gate Charge 33 nc V GS =V, V S =3V, I =3A Q gs Gate Source Charge 5 nc Q gd Gate rain Charge 9 nc t (on) TurnOn elaytime 8 ns t r TurnOn Rise Time V GS =V, V S =3V, R L =Ω, 35 ns t (off) TurnOff elaytime R GEN =3Ω 44 ns t f TurnOff Fall Time 3 ns t rr Body iode Reverse Recovery Time I F =3A, di/dt=a/µs 53 64 ns Q rr Body iode Reverse Recovery Charge I F =3A, di/dt=a/µs 98 nc A: The value of R θja is measured with the device in a still air environment with T A =5 C. B. The power dissipation P is based on T J(MAX) =75 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX) =75 C.. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =75 C. G. The maximum current rating is limited by bondwires. Rev: Jan. 9 µa mω THIS PROUCT HAS BEEN ESIGNE AN QUALIFIE FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS ARE NOT AUTHORIZE. AOS OES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERVES THE RIGHT TO IMPROVE PROUCT ESIGN, FUNCTIONS AN RELIABILITY WITHOUT NOTICE.
AOT46 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 5 V 8V 8 V S =5V I (A) 5 5V I (A) 6 4 5 C 5 4.5V V GS =4V 3 4 5 V S (Volts) Figure : OnRegion Characteristics.5 3 3.5 4 4.5 5 5.5 V GS (Volts) Figure : Transfer Characteristics 5 C 7.. R S(ON) (mω) 7 6.8 6.6 6.4 6. V GS =V Normalized OnResistance.8.6.4..8 V GS =V, 3A 6 4 6 8 I (A) Figure 3: OnResistance vs. rain Current and Gate Voltage.6 5 5 5 5 75 5 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 5 I =3A R S(ON) (mω) 5 5 5 5 C I S (A).. 5 C 5 4 C 4 8 6 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage.. 4 C...4.6.8.. V S (Volts) Figure 6: Bodyiode Characteristics
AOT46 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 8 V S =3V I =3A 6 C iss V GS (Volts) 6 4 Capacitance (nf) 4 C rss C oss 4 6 8 Q g (nc) Figure 7: GateCharge Characteristics 5 3 45 6 V S (Volts) Figure 8: Capacitance Characteristics µs I (A) R S(ON) limited T J(Max) =75 C T C =5 C C 5µs ms 5ms V S (V) Figure 9: Maximun Forward Biased Safe Operating Area (Note F) Power (W).... Pulse Width (s) Figure : Single Pulse Power Rating Junctionto Case (Note F) Z θjc Normalized Transient Thermal Resistance.. =T on /T T J,PK =T C P M.Z θjc.r θjc R θjc =.45 C/W Single Pulse In descending order =.5,.3,.,.5,.,., single pulse..... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P T on T
AOT46 TYPICAL ELECTRICAL AN THERMAL CHARACTERISTICS 3 Power issipation (W) 5 5 5 Current rating I (A) 8 6 4 5 5 75 5 5 75 T CASE ( C) Figure 3: Power erating (Note B) 5 5 75 5 5 75 T CASE ( C) Figure : Current erating (Note B) I (A), Peak Avalanche Current 5 5 75 5 5 T A =5 C T A =5 C.... Time in avalanche, t A (s) Figure : Single Pulse Avalanche capability
AOT46 Gate Charge Test Circuit & Waveform Qg UT V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg UT 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV SS Rg Id Id I AR UT iode Recovery Test Circuit & Waveforms UT Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr