UTP45N2 UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE DESCRIPTION As N-Channel power MOSFETs the UTP45N2 is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. FEATURES * 45A, 2V * R DS(ON) =.22Ω * Temperature compensating PSPICE model * Be driven directly from CMOS, NMOS, and TTL circuits * Peak current vs. pulse width curve SYMBOL 2.Drain *Pb-free plating product number: UTP45N2L 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Normal Lead Free Plating 1 2 3 Packing UTP45N2-TN3-R UTP45N2L-TN3-R TO-252 G D S Tape Reel UTP45N2-TN3-T UTP45N2L-TN3-T TO-252 G D S Tube 1 of 6 Copyright 28 Unisonic Technologies Co., Ltd QW-R52-18.A
UTP45N2 ABSOLUTE MAXIMUM RATINGS (Ta = 25, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 2 V Gate-Source Voltage V GSS ±1 V Continuous Drain Current I D 45 A Power Dissipation 9 W P Derate Above 25 D.66 W/ Junction Temperature T J +175 Storage Temperature T STG -55 ~ +175 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Junction to Ambient θ JA 8 /W Junction to Case θ JC 1.65 /W ELECTRICAL CHARACTERISTICS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS =V, I D =25 µa 2 V Zero Gate Voltage Drain Current I DSS V DS =2V, V GS = V 1 µa Gate-to-Source Leakage Current I GSS V GS = ±1 V ±1 na ON CHARACTERISTICS Gate to Source Threshold Voltage V GS(TH) V DS =V GS, I D =25 µa 1 2 V Drain-to-Source On Resistance R DS(ON) V GS = 5V, I D =45 A.22 Ω DYNAMIC PARAMETERS Input Capacitance C ISS 13 Reverse Transfer Capacitance C RSS 25 Output Capacitance C OSS V DS =15 V, V GS =V, f=1mhz 724 pf SWITCHING PARAMETERS Turn-ON Time t ON 26 Turn-ON Delay Time t D(ON) 15 V GS =5 V, V DD =15 V, Turn-ON Rise Time t R 16 I D 45 A, R GS = 5, Turn-OFF Delay Time t D(OFF) 2 R L =.33 ns Turn-OFF Fall-Time t F 2 Turn-OFF Time t OFF 6 Total Gate Charge Q G V GS =V~1V V DD = 16V, 5 6 Gate-Source Charge Q GS V GS =V ~ 5 V I D 45A, 3 36 nc Gate-Drain Charge Q GD V GS =V~ 1 V R L =.35Ω 1.5 1.8 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage V SD I SD =45 A 1.5 V Reverse Recovery Time t RR I SD = 45 A,dI SD /dt = 1 A/µs 125 ns UNISONIC TECHNOLOGIES CO., LTD 2 of 5 QW-R52-18.A
UTP45N2 TYPICAL CHARACTERISTICS On-State Drain Current,ID(ON) (A) Normalized On Resistance Drain to Source On Resistance,RDS(On) (m) 1.2 Normalized Power Dissipation vs Temperature Derating 5 Maximum Continuous Drain Current vs Case Temperature Power Dissipation Multiplier 1..8.6.4.2 4 3 2 1 25 5 75 1 125 15 175 Case Temperature,T C () 25 5 75 1 125 15 175 Case Temperature,T C () UNISONIC TECHNOLOGIES CO., LTD 3 of 5 QW-R52-18.A
UTP45N2 TYPICAL CHARACTERISTICS(Cont.) Switching Time (ns) Avalanche Current,IAS (A) 2. Normalized Gate Threshold Voltage vs Junction Temperature V GS =V DS,I D =25A 2. Normalized Drain to Source Breakdown Voltage vs Junction Temperature I D =25A Normalized Gate Threhold Voltage 1.5 1..5 Normalized Drain to Source Breakdown Voltage 1.5 1..5-8 -4 4 8 12 16 2 Junction Temperature,T J () -8-4 4 8 12 16 2 Junction Temperature,T J () Capacitance,C (pf) 25 2 15 1 5 Capacitance vs. Drain to Source Voltage V GS =V,f=1MH Z C ISS C OSS C RSS Drain to Source Voltage,VDS (V) 2 15 1 5 Normalized Switching Waveforms for Constant Gate Current R L =.44 I G(REF) =.5mA V GS =5V Plateau Voltage in Descending Order: V DD =.75BV DSS V DD =.5BV DSS V DD =.25BV DSS 5. 3.75 2.5 1.25 Gate to Source Voltage,VGS (V) 5 1 15 Drain to Source Voltage,V DS (V) 2 G(REF) 2 Time,t (s) 8 G(REF) G(ACT) G(ACT) UNISONIC TECHNOLOGIES CO., LTD 4 of 5 QW-R52-18.A
UTP45N2 TYPICAL CHARACTERISTICS(Cont.) Normalized Thermal Impedance,ZJC Peak Current,IDM (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 5 of 5 QW-R52-18.A