MOSFET OptiMOS TM 5PowerTransistor,8V DPAK Features Nchannel,normallevel ExcellentgatechargexRDS(on)product(FOM) VerylowonresistanceRDS(on) 175 Coperatingtemperature Pbfreeleadplating;RoHScompliant QualifiedaccordingtoJEDEC 1) fortargetapplication Idealforhighfrequencyswitchingandsynchronousrectification HalogenfreeaccordingtoIEC61249221 1 2 3 tab Table1KeyPerformanceParameters Parameter Value Unit VDS 8 V RDS(on),max 4.6 mω ID 9 A Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Type/OrderingCode Package Marking RelatedLinks PGTO2523 46N8N5 1) JSTD2 and JESD22 1
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Package Outlines....................................................................... 1 Revision History........................................................................ 11 Trademarks........................................................................... 11 Disclaimer............................................................................ 11 2
1Maximumratings atta=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Unit Note/TestCondition Continuous drain current ID 9 82 A TC=25 C 1) TC=1 C Pulsed drain current 1) ID,pulse 36 A TC=25 C Avalanche energy, single pulse 2) EAS 75 mj ID=9A,RGS=25Ω Gate source voltage VGS 2 2 V Power dissipation Ptot 125 W TC=25 C Operating and storage temperature Tj,Tstg 55 175 C IEC climatic category; DIN IEC 681: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Unit Note/TestCondition Thermal resistance, junction case RthJC.7 1.2 K/W Thermal resistance, junction ambient, minimal footprint RthJA 75 K/W Thermal resistance, junction ambient, 6 cm 2 cooling area 3) RthJA 5 K/W Soldering temperature, wave and reflow soldering allowed Tsold 26 C reflow MSL1 1) See Diagram 3 for more detailed information 2) See Diagram 13 for more detailed information 3) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. 3
3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 8 V VGS=V,ID=1mA Gate threshold voltage VGS(th) 2.2 3. 3.8 V VDS=VGS,ID=65µA Zero gate voltage drain current IDSS.1 1 1 1 µa VDS=8V,VGS=V,Tj=25 C VDS=8V,VGS=V,Tj=125 C Gatesource leakage current IGSS 1 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Gate resistance 1) RG 1.1 1.7 Ω 4. 5.4 4.6 6.3 mω VGS=1V,ID=45A VGS=6V,ID=23A Transconductance gfs 41 82 S VDS >2 ID RDS(on)max,ID=45A Table5Dynamiccharacteristics 1) Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 293 38 pf VGS=V,VDS=4V,f=1MHz Output capacitance Coss 488 63 pf VGS=V,VDS=4V,f=1MHz Reverse transfer capacitance Crss 23 4 pf VGS=V,VDS=4V,f=1MHz Turnon delay time td(on) 11 ns Rise time tr 6 ns Turnoff delay time td(off) 21 ns Fall time tf 6 ns VDD=4V,VGS=1V,ID=45A, RG,ext=1.6Ω VDD=4V,VGS=1V,ID=45A, RG,ext=1.6Ω VDD=4V,VGS=1V,ID=45A, RG,ext=1.6Ω VDD=4V,VGS=1V,ID=45A, RG,ext=1.6Ω Table6Gatechargecharacteristics 2) Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 14 nc VDD=4V,ID=45A,VGS=to1V Gate to drain charge 1) Qgd 9 14 nc VDD=4V,ID=45A,VGS=to1V Switching charge Qsw 14 nc VDD=4V,ID=45A,VGS=to1V Gate charge total 1) Qg 42 53 nc VDD=4V,ID=45A,VGS=to1V Gate plateau voltage Vplateau 4.8 V VDD=4V,ID=45A,VGS=to1V Output charge 1) Qoss 51 68 nc VDD=4V,VGS=V 1) Defined by design. Not subject to production test 2) See Gate charge waveforms for parameter definition 4
Table7Reversediode Parameter Symbol Unit Note/TestCondition Diode continous forward current IS 9 A TC=25 C Diode pulse current IS,pulse 36 A TC=25 C Diode forward voltage VSD.9 1.2 V VGS=V,IF=45A,Tj=25 C Reverse recovery time 1) trr 41 82 ns VR=4V,IF=45,diF/dt=1A/µs Reverse recovery charge 1) Qrr 46 92 nc VR=4V,IF=45,diF/dt=1A/µs 1) Defined by design. Not subject to production test 5
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 15 Diagram2:Draincurrent 1 125 8 1 6 Ptot[W] 75 4 5 25 2 5 1 15 2 TC[ C] Ptot=f(TC) 5 1 15 2 TC[ C] ID=f(TC);VGS 1V Diagram3:Safeoperatingarea 1 3 Diagram4:Max.transientthermalimpedance 1 1 1 µs 1 µs 1 2 1.5 1 1 1 µs 1 ms ZthJC[K/W] 1 1.2.1.5.2 1 ms.1 single pulse DC 1 1 1 1 1 1 1 2 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp 1 2 1 5 1 4 1 3 1 2 1 1 1 tp[s] ZthJC=f(tp);parameter:D=tp/T 6
Diagram5:Typ.outputcharacteristics 36 32 8 V 1 V 7 V Diagram6:Typ.drainsourceonresistance 1 4.5 V 28 6.5 V 8 5.5 V 6 V 6.5 V 24 2 16 12 6 V 5.5 V RDS(on)[mΩ] 6 4 7 V 8 V 1 V 8 5 V 2 4 4.5 V 1 2 3 4 5 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 4 8 12 16 2 24 28 32 RDS(on)=f(ID);Tj=25 C;parameter:VGS Diagram7:Typ.transfercharacteristics 15 Diagram8:Typ.forwardtransconductance 16 12 12 9 gfs[s] 8 6 3 175 C 25 C 4 2 4 6 8 VGS[V] ID=f(VGS); VDS >2 ID RDS(on)max;parameter:Tj 4 8 12 16 gfs=f(id);tj=25 C 7
Diagram9:Drainsourceonstateresistance 1 Diagram1:Typ.gatethresholdvoltage 4 8 3 65 µa 65 µa RDS(on)[mΩ] 6 4 max typ VGS(th)[V] 2 2 1 6 2 2 6 1 14 18 Tj[ C] RDS(on)=f(Tj);ID=45A;VGS=1V 6 2 2 6 1 14 18 Tj[ C] VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 1 4 Ciss 1 3 25 C 175 C 25 C max 175 C max 1 3 Coss 1 2 C[pF] IF[A] 1 2 Crss 1 1 1 1 2 4 6 8 VDS[V] C=f(VDS);VGS=V;f=1MHz 1..5 1. 1.5 2. VSD[V] IF=f(VSD);parameter:Tj 8
Diagram13:Avalanchecharacteristics 1 2 Diagram14:Typ.gatecharge 1 4 V 25 C 8 16 V 64 V 1 C 6 IAV[A] 1 1 VGS[V] 4 15 C 2 1 1 1 1 1 1 1 2 1 3 tav[µs] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) 1 2 3 4 5 Qgate[nC] VGS=f(Qgate);ID=45Apulsed;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 9 Gate charge waveforms 85 VBR(DSS)[V] 8 75 7 6 2 2 6 1 14 18 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 9
5PackageOutlines Figure1OutlinePGTO2523,dimensionsinmm/inches 1
RevisionHistory Revision:216912,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) 2. 216912 Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 216InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 11