The PA8T has built-in low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES Low Noise NF = 1.9 db TYP. @ f = GHz, VCE = 1 V, IC = ma High Gain S1e = 6. db TYP. @ f = GHz, VCE = 1 V, IC = ma A Mini Mold Package Adopted Built-in Transistors ( SC8) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE PA8T Loose products Embossed tape 8 mm wide. Pin 6 (Q1 ( PCS) Base), Pin (Q Base), Pin (Q Emitter) PA8T-T1 Taping products ( KPCS/Reel) face to perforation side of the tape. Remark To order evaluation samples, please contact your nearby sales office. Part number for sample order: PA8T-A (Unit Sample quantity is pcs.) ABSOLUTE MAXIMUM RATINGS (TA = C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO V Collector to Emitter Voltage VCEO 1 V Emitter to Base Voltage VEBO 1. V Collector Current IC ma Total Power Dissipation PT 1 in 1 element mw in elements Note Junction Temperature Tj 1 C Storage Temperature Tstg 6 to +1 C Note DATA SHEET HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN ELEMENTS) MINI MOLD 11 mw must not be exceeded in 1 element. SILICON TRANSISTOR PA8T PACKAGE DRAWINGS.±. 1..9±.1.6.6.7 1.1±.1 1.±.1 ~.1 (Unit: mm) 6. PIN CONFIGURATION (Top View) 6 Q1 1 Q PIN CONNECTIONS 1. Collector (Q1). Emitter (Q). Emitter (Q1). Base (Q). Collector (Q) 6. Base (Q1) X Y +.1 +.1.1 Document No. ID-6 (O.D. No. ID-911) Date Published April 199 P The information in this document is subject to change without notice.
PA8T ELECTRICAL CHARACTERISTICS (TA = C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current ICBO VCB = 1 V, IE = 1. A Emitter Cutoff Current IEBO VEB = 1 V, IC = 1. A DC Current Gain hfe, IC = ma Note 1 8 Gain Bandwidth Product ft, IC = ma. 8 GHz Feed-back Capacitance Cre VCB = V, IE =, f = 1 MHz Note.7 pf Insertion Power Gain (1) S1e VCE = 1 V, IC = ma, f = GHz. 6. db Insertion Power Gain () S1e, IC = ma, f = GHz. 7. db Noise Figure (1) NF VCE = 1 V, IC = ma, f = GHz 1.9. db Noise Figure () NF, IC = ma, f = GHz 1.9. db Notes 1. Pulse Measurement: Pw s, Duty cycle %. Measured with -pin bridge, emitter and case should be connected to guard pin of bridge. hfe CLASSIFICATION Rank Marking KB RL hfe Value 8 to TYPICAL CHARACTERISTICS (TA = C) Total Power Dissipation PT (mw) 1 1 PT - TA Characteristics Elements in Total Per Element 1 1 Ambient Temperature TA ( C) IC - VBE Characteristics Free Air DC Current Gain hfe 1 1 1 IC - VCE Characteristics 1 A 1 A 8 A 6 A A IB = A 1. Collector to Emitter Voltage VCE (V) hfe - IC Characteristics 16 A 1 A. 1. Base to Emitter Voltage VBE (V) 1. 1 1
PA8T Feed-back Capacitance Cre (pf) Insertion Power Gain S1e (db) Noise Figure (db).. 1... 1 8. 1. f = 1 MHz Cre - VCB Characteristics.1 1 1. Collector to Base Voltage VCB (V) l S1e l - IC Characteristics f = GHz 1 1 NF - IC Characteristics f = GHz 1 1 Gain Bandwidth Product ft (GHz) Insertion Power Gain S1e (db) 1 8 6 1 1 f = GHz ft - IC Characteristics 1 1 S1e - f Characteristics IC = ma.1. 1... Frequency f (GHz)
PA8T S-PARAMETERS, IC = ma, ZO = Ω FREQUENCY S11 S1 S1 S 1..87 18.6 1.87 161.1.18 78..98 1.1..76. 1.9 1.1. 68.6.888 17.7..677 7. 1.888 1.6.8 66.6.8...6 9. 9.7 1.6. 6.8.719 6.7..9 67. 8. 11.7.6 6..669 8.7 6.. 76.1 7.18 18.9.7 61.1.61. 7..7 81.6 6. 1.8.8 6.8.6.6 8..7 88..818 99..89 6.7.6 1. 9..89 9.6.1 9..9 6.6..1 1.. 1..8 9..1 6.8.19. 11..6 1.. 88.8.1 6..1 1.8 1..1 11..1 8..11 6..97. 1..19 117.6.8 8..1 6.6.76. 1..18 1.8. 79..17 6..81. 1..16 19.9. 77..19 6.1.67.6 16..1 17..18 7..1 6..66.8 17..1 1..91 7.6.1 6..8 7. 18..19 11.8.87 7..16 6..6 6.1 19..1 17..76 68.7.168 6..1 8...19 16.7.6 66..176 6.8. 9., IC = ma, ZO = Ω FREQUENCY S11 S1 S1 S 1..9 1. 9.8 16.9. 8.1.969 7.7..868 6.6 8.668 1.8.8 77..96 1.8..81 7.7 8.16 1.9.1 67.9.876.9..717 8.9 7.79 1.9.6 6.9.8...6 6.8 6.78 1..7 6.9.76 6.7 6..77 6. 6.61 118..8 6..78 9.7 7..18 71.. 11.8.91 9.7.68 1.1 8..68 78.1.7 16.7.98 7..69. 9.. 8.7.6 1.8.1 9..611.8 1..8 9.6. 98..1 6.6.9. 11.. 9.8.91 9.8.11 7.8.79.1 1..1 11.6.717 9..11 9..1. 1..91 1.9.8 87.6.18 8.7..9 1..7 111.7.6 8..1 9.8. 6.6 1.. 117..1 8.7.1 8..11 7. 16..8 1..99 79..1 9..16 7.7 17..19 18..819 76..1 9.. 9. 18..199 1..699 7.9.161 8..9 9.9 19..19 19.6.7 71.9.16 6..89 1...18 16.9.7 68..17 9.8.8 1., IC = 1 ma, ZO = Ω FREQUENCY S11 S1 S1 S 1. 1. 7.6. 17.1. 86..99.6..98 16.1. 16..9 79..986 7.8..97..68 17..61 7.6.976 1.8..9 1.8.19 19.1.7 7.7.96 1.1..899 6.9.186 1..9 66..9 18.8 6..89.7.6 1.7.1 6..88. 7..81.6.9 11.1.11 61.7.88. 8..77 7.1.8 1..18.7.86 7. 9..77 6.9.69 119..1.6.88 8.8 1..68 69..97 11.1.16.7.79 1.8 11..61 7.1.79 19..16..766.8 1..616 79.8.9 1.8.1 9.8.71.9 1..7 8.. 11.1.1 6..71.9 1..6 9.6.7 96..16 6.7.78 6.8 1..1 9.8.11 9.1.168.6.68 8. 16..81 1.6. 88.8.16..676.1 17..6 16. 1.989 8..176..667 1.8 18.. 111.8 1.9 8..17.8.69. 19..19 116. 1.8 78.9.17..6...9 11. 1.779 7..17.7.6.
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