IGBT and SLLIMM Technology evolution, Roadmaps and short term new products overview March 2012
IGBT Technology evolution, Roadmaps and short term new products overview
3 IGBTs technologies evolution Trench Gate Field Stop IGBT suitable for high voltage and high current applications Technology Milestones emitter p++ n+ gate Implanted Back Emitter Implanted Field Stop Trench Gate Thin wafer thickness p- Features n- n p Low E OFF due to improved minority carrier recombination Positive Temperature coefficient in V CE(sat) resulting in a safer paralleling operation Low V CE(sat) High switching robusteness (Large SOA) collector
4 IGBTs technologies evolution in R TH Punch Through emitter p++ n+ p- n- gate 410 µm 280 µm n+ p+ substrate 80µm (650V) Field Stop emitter gate p++ n+ p- collector n- Reduced Thermal Resistance (R TH ) -25% n p collector
7 IGBT Technology Roadmaps: 650V Trench Gate Field Stop STGW25H120DF 1200V for High Frequency Q3 Maturity 30 emitter p++ n+ p- n- n p collector gate STG99K120F2 1200V for Motor Control Q4 STGW60H65F 650V for High Frequency 1350V IRD for IH Q1 MAT 30 STG100H65F2 650V for Motor Control Q4 2011 2012 2013 2014
8 1200V IGBT High Frequency series Technology Vehicle STGW25H120DF Preliminary Results (on packaged parts) Symbol Characteristic Typical Value 25 C 150 C Unit BV CES Collector to Emitter breakdown voltage 1200 V V CESAT V GE = 15V, I C = 25A 2.2 2.4 V E OFF V CC =600V, V GE =15 0V, R GOFF =22Ω, I C =25A 0.9 1.6 mj Product Features: IGBT in Trench Gate Field Stop Technology 1200V at T C = 25 C Final die thickness: 110µm Very low R TH Positive derating of V CE(sat) Tailored for High speed switching application Simulated benchmark based on datasheet values Topology: Full Bridge Main Specs: P Out =3kW, f Sw =20kHz, D Max =90%, Î Out 20A, T j =125ºC Device (Trench FS) I C (nom) P Con (W) P Sw (W) P Tot (W) (*) STGW25H120DF 25A @ 100 C 11.92 11.15 23.1 Competitor 1 25A @ 100 C 10.37 12.10 22.5 Competitor 2 25A @ 110 C 10.89 12.74 23.6 Competitor 3 25A @ 100 C 13.48 10.51 24.0 (*) switching-on power losses have been neglected for all the devices under benchmark, since they basically depend of co-packaged diode
9 650V IGBT High Frequency series Technology Vehicle STGW60H65DF Final Results (on packaged parts) Symbol Characteristic Typical Value 25 C 150 C Unit BV CES Collector to Emitter breakdown voltage 650 V V CESAT V GE = 15V, I C =60A 1.9 2.1 V E OFF V CC = 400V, V GE = 15V 0, R G = 10Ω, I C = 60A 1.05 1.4 mj Product Features: IGBT in Trench Gate Field Stop Technology 650V at T C = 25 C Final die thickness: 80µm Very low R TH Positive derating of V CE(sat) Tailored for High speed switching application Simulated benchmark based on datasheet values Topology: Full Bridge Main Specs: P out =5kW, f sw =16kHz, D Max =90%, Î Out 30A, T J =150ºC Device (Trench FS) I C (nom) P Con (W) P Sw (W) P Tot (W) (*) STGW60H65DF 60A @ 100 C 13.11 4.33 17.2 Competitor 1 50A @ 100 C 13.51 3.57 17.1 Competitor 2 58A @ 100 C 14.70 3.06 17.8 Competitor 3 60A @ 100 C 13.91 4.08 18.0 (*) switching-on power losses have been neglected for all the devices under benchmark, since they basically depend of co-packaged diode
Short Term Product Plan of Discrete IGBT PN BV CES (@ 25 C) I C (@ 100 C) Package Applic. Samples emitter gate p++ n+ p- n- n p collector STGW15H120DF 1200 V 15 A TO-247 UPS, PFC, PV Oct 12 STGW25H120DF 1200 V 25 A TO-247 UPS, PFC, PV May 12 STGW40H120DF 1200 V 40 A TO-247 UPS, PFC, PV Nov 12 STGW40H65DF 650 V 40 A TO-247 PV, MC Oct 12 STGW60H65F 650 V 60 A TO-247 PV, MC Production STGW60H65DF 650 V 60 A TO-247 PV, MC Available STGW60H65DRF 650 V 60 A TO-247 UPS, PFC, PV Available STGW80H65DF 650 V 80 A TO-247 PV, MC Jul 12 STGP20H60DF 600 V 20 A TO -220 PV, MC Jul 12 STGP30H60DF 600 V 30 A TO-220 PV, MC Jun 12 STGW50H60DLT 600 V 50 A TO-247 IH, SMPS Mar 12 STGW40H60DLF 600V 40 A TO-247 IH, UPS, PFC Oct 12 STGW50H60DF 600 V 50 A TO-247 UPS, PFC, MC Production Jan 2012 12
SLLIMM family Technology evolution & Roadmap
14 Three years SLLIMM roadmap SLLIMM-25L SLLIMM-38L SLLIMM-nano SLLIMM-Full Molded SMIP-26L SLLIMM-nano SDIP-25L SDIP-38L NDIP-26L FDIP-25L 2012 2014 Already available In feasability study
15 SLLIMM Features & Benefit Benefits High quality and Reliability Tj = from -40ºC to 150ºC Advanced protection function Improved efficiency Reduce EMI and noise Reduce total system cost Easy Layout Main features and integrated functions SLLIMM-nano (max 300W): STGIPN3H60A/ STGIPN3H60 : 3A, 600V, 26 leads (Full Molded) SLLIMM: STGIPS10K60T: 10A, 600V, 25 leads (DBC + NTC + SD) STGIPS14K60T: 14A, 600V, 25 leads (DBC + NTC + SD) STGIPL20K60: 20A, 600V, 38 leads (DBC +NTC + SD + SSD+ Op Amps) Main Applications General purpose Low power motor drives Washing machine Dish washers Compressor drives Refrigerators Sewing machines Pumps Tools Fans Rehabilitation and fitness applications
SLLIMM Power Coverage Target: To complete the product portfolio for 3Φ BLDC motors in 200 700W power rating with a proper technical competitive solution SLLIMM-DBC SLLIMM-Full Molded In feasability study 700W 2KW 200W 700W SLLIMM-nano up to 150W Main Applications Compressors for Fridge BLDC outdoor Fan Medium Power Inverters in HA ( i.e. Oven, Dryers) General Industrial Medium Power Drives 16
SLLIMM Single Leg: Modular Half-Bridge IPM Target: A complete leg (high side and low side high power switches) including the relative driving in a SLLIMM package for a modular approach It includes several innovative features: Modular and expandable solution Better Thermal behavior than a complete six-pack solution in a unique molded module More flexible customer board design Several smart functions embedded Silicon options offered for both PFC (W) and Motor Control (K) PN ( * ) BVCES @ 25 C IC @ 25 C Features NTC Package STGIPS35K60L1 600 V 35 A L6390 based Y SDIP 22L STGIPS40W60L1 600 V 40 A L6390 based Y SDIP 22L (*) Samples available. MAT 21 18