30 A, 600 V ultra fast IGBT Features High frequency operation Lower C RES / C IES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applicatio High frequency motor controls, inverters, UPS HF, SMPS and PFC in both hard switch and resonant topologies Description TO-247 1 2 3 This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packaging STGW30NC60WD GW30NC60WD TO-247 Tube November 2008 Rev 5 1/14 www.st.com 14
Contents STGW30NC60WD Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)............................. 7 3 Test circuit............................................... 10 4 Package mechanical data.................................... 11 5 Revision history........................................... 13 2/14
Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 600 V I C (1) Collector current (continuous) at 25 C 60 A I C (1) Collector current (continuous) at 100 C 30 A I CP (2) I CL (3) Collector current (pulsed) 150 A Turn-off latching current 150 A V GE Gate-emitter voltage ± 20 V I F Diode RMS forward current at T C = 25 C 30 A I FSM Surge not repetitive forward current t p = 10 ms sinusoidal 120 A P TOT Total dissipation at T C = 25 C 200 W T stg T j Storage temperature Operating junction temperature 55 to 150 C 1. Calculated according to the iterative formula: I C ( T C ) 2. Pulse width limited by max junction temperature T jmax ( ) T C R thj c V CE( sat) ( max) T jmax = --------------------------------------------------------------------------------------------------------- ( ( ), I C ( T C )) 3. V CLAMP = 80% (V CES ), V GE = 15 V, R G = 10 Ω, T J = 150 C Table 3. Thermal resistance Symbol Parameter Value Unit R thj-case Thermal resistance junction-case IGBT max. 0.63 C/W Thermal resistance junction-case diode max. 1.5 C/W R thj-amb Thermal resistance junction-ambient max. 50 C/W 3/14
Electrical characteristics STGW30NC60WD 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 4. Static electrical characteristics Symbol Parameter Test conditio Min. Typ. Max. Unit V (BR)CES Collector-emitter breakdown voltage (V GE = 0) I C = 1 ma 600 V V CE(sat) Collector-emitter saturation voltage V GE = 15 V, I C = 20 A V GE = 15V, I C = 20 A,T C = 125 C 2.1 1.8 2.5 V V V GE(th) Gate threshold voltage V CE = V GE, I C = 250µA 3.75 5.75 V I CES Collector cut-off current (V GE = 0) V CE = 600 V V CE = 600 V, T C = 125 C 250 1 µa ma I GES Gate-emitter leakage current (V CE = 0) V GE = ±20 V ± 100 na g fs Forward traconductance V CE = 15 V, I C = 20 A 15 S Table 5. Dynamic electrical characteristics Symbol Parameter Test conditio Min. Typ. Max. Unit C ies C oes C res Input capacitance Output capacitance Reverse trafer capacitance V CE = 25 V, f = 1 MHz, V GE = 0 2080 175 52 pf pf pf Q g Q ge Q gc Total gate charge Gate-emitter charge Gate-collector charge V CE = 390 V, I C = 20 A, V GE = 15 V, (see Figure 18) 102 17.5 47 140 nc nc nc 4/14
Electrical characteristics Table 6. Switching on/off (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit t d(on) t r (di/dt) on Turn-on delay time Current rise time Turn-on current slope V CC = 390 V, I C = 20 A R G = 10 Ω, V GE = 15 V, (see Figure 17) 29.5 12 1640 A/µs t d(on) t r (di/dt) on Turn-on delay time Current rise time Turn-on current slope V CC = 390 V, I C = 20 A R G = 10 Ω, V GE = 15 V, T C = 125 C (see Figure 17) 29 13.5 1600 A/µs t r (V off ) t d ( off ) t f Off voltage rise time Turn-off delay time Current fall time V CC = 390 V, I C = 20 A, R GE = 10 Ω, V GE = 15 V (see Figure 17) 19.5 118 27 t r (V off ) t d ( off ) t f Off voltage rise time Turn-off delay time Current fall time V CC = 390 V, I C = 20 A, R GE = 10 Ω, V GE =15 V, T C = 125 C (see Figure 17) 46 151 38 Table 7. Switching energy (inductive load) Symbol Parameter Test conditio Min. Typ. Max. Unit E (1) on E off E ts Turn-on switching losses Turn-off switching losses Total switching losses V CC = 390 V, I C = 20 A R G = 10 Ω, V GE = 15 V, (see Figure 19) 305 181 486 µj µj µj (1) E on E off E ts Turn-on switching losses Turn-off switching losses Total switching losses V CC = 390 V, I C = 20 A R G = 10 Ω, V GE = 15 V, T C = 125 C (see Figure 19) 455 355 810 µj µj µj 1. Eon is the tun-on losses when a typical diode is used in the test circuit in Figure 19. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25 C and 125 C). Eon include diode recovery energy. 5/14
Electrical characteristics STGW30NC60WD Table 8. Collector-emitter diode Symbol Parameter Test conditio Min. Typ. Max. Unit V F Forward on-voltage I F = 20 A I F = 20 A, T C = 125 C 2.6 1.6 V V t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 20 A,V R = 50 V, di/dt = 100 A/µs (see Figure 20) 40 50 2.5 nc A t rr Q rr I rrm Reverse recovery time Reverse recovery charge Reverse recovery current I F = 20 A,V R = 50 V, T C =125 C, di/dt = 100 A/µs (see Figure 20) 80 180 4.5 nc A 6/14
Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Output characteristics Figure 3. Trafer characteristics Figure 4. Traconductance Figure 5. Collector-emitter on voltage vs temperature VCE(V) HV28940 3.2 3 30A 40A VGE=15V 2.8 2.6 20A 2.4 2.2 2 1.8 1.6 IC=10A 1.4-75 -50-25 0 25 50 75 100 125 150 TJ( C) Figure 6. Gate charge vs gate-source voltage Figure 7. Capacitance variatio 7/14
Electrical characteristics STGW30NC60WD Figure 8. Normalized gate threshold voltage vs temperature Figure 9. Collector-emitter on voltage vs collector current VCE(sat) (V) 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 TJ=-50 C TJ=25 C TJ=150 C HV28950 0.8 0 5 10 15 20 25 30 35 40 45 50 55 60 IC(A) Figure 10. Normalized breakdown voltage vs temperature Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current 8/14
Electrical characteristics Figure 14. Thermal impedance Figure 15. Turn-off SOA Figure 16. Emitter-collector diode characteristics IFM(A) 120 110 100 90 80 70 60 50 40 30 20 10 0 Tj=125 C (Typical values) Tj=125 C (Maximum values) VFM(V) Tj=25 C (Maximum values) 0 1 2 3 4 5 6 9/14
Test circuit STGW30NC60WD 3 Test circuit Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit AM01504v1 AM01505v1 Figure 19. Switching waveform Figure 20. Diode recovery time waveform 90% di/dt Qrr VCE VG IC Td(on) Ton Tr(Ion) Tr(Voff) Tcross Td(off) Tf Toff 10% 90% 10% 90% 10% IF IRRM ta trr tb IRRM t VF di/dt AM01506v1 AM01507v1 10/14
Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditio are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specificatio are available at: www.st.com 11/14
Package mechanical data STGW30NC60WD TO-247 Mechanical data Dim. mm. Min. Typ Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øp 3.55 3.65 ør 4.50 5.50 S 5.50 12/14
Revision history 5 Revision history Table 9. Document revision history Date Revision Changes 21-Nov-2005 1 Initial release. 29-Nov-2005 2 Modified Figure 5 and Figure 6 06-Mar-2006 3 New template 12-Jul-2007 4 Corrected Figure 11, Figure 12, Figure 13 11-Nov-2008 5 Figure 16 has been updated. 13/14
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