FC6B21150L Gate resistor installed Dual N-channel MOS FET

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Transcription:

Established : 0-0- Doc No. TT-EA-90 Revision. FCB0L FCB0L Gate resistor installed Dual N-channel For lithium-ion secondary battery protection circuits. Unit: mm Features Low source-source ON resistance:rss(on) typ. =.0 mω(vgs =. V) CSP(Chip Size Package) RoHS compliant (EU RoHS / MSL:Level compliant) 3.7 φ0.3 0. Marking Symbol: Packaging Embossed type (Thermo-compression sealing) : 0 000 pcs / reel (standard) (0.) (0.) Absolute Maximum Ratings Ta = C Panasonic Parameter Symbol Rating Unit JEITA Source-source Voltage Gate-source Voltage *3 VSS VGS ±0. V V DC * IS A Source Current DC * IS 7 A Pulse *3 ISp 0 A Total Power Dissipation DC * PD 0. W DC * PD. W Channel Temperature Storage Temperature Range Tch Tstg - 0 to +0 C C FET Thermal resistance (ch-a) DC * Rth 7 C/W DC * Rth 9 C/W Note * Mounted on FR board FET (.mm.mm t.0mm, 3μm Copper) * Mounted on Ceramic substrate (70 mm 70 mm t.0 mm). *3 t = 0 μs, Duty Cycle %. Source- (FET). Source- (FET). Gate (FET). Gate (FET) 3. Source- (FET). Source- (FET) MLGA00-W-7-RA Code Equivalent circuit (S-), (S-),, 3 (S-), (S-) (G) (G) of

Established : 0-0- Doc No. TT-EA-90 Revision. FCB0L Electrical Characteristics Ta = C ± 3 C Parameter Symbol Conditions Min Typ Max Unit Source-source Breakdown Voltage VSSS IS = ma, VGS = 0 V V Zero Gate Voltage Source Current ISSS VSS = V, VGS = 0 V.0 μa Gate-source Leakage Current IGSS VGS = ± V, VSS = 0 V ±0 VGS = ± V, VSS = 0 V ±.0 μa Gate-source Threshold Voltage Vth IS = 0. ma, VSS = 0 V 0.3 0.90. V RSS(on) IS =.0 A, VGS =. V 3. Source-source On-state Resistance RSS(on) IS =.0 A, VGS = 3. V 3..3. RSS(on)3 IS =.0 A, VGS = 3. V 3... mω RSS(on) IS =.0 A, VGS =. V 3..9 0 Body Diode Forward Voltage VF(s-s) IF =.0 A, VGS = 0 V 0.. V Input Capacitance * Ciss 70 Output Capacitance * Coss VSS = 0 V, VGS = 0 V, f = MHz 0 pf Reverse Transfer Capacitance * Crss 390 Turn-on delay Time *,* td(on) VDD = 0 V, VGS = 0 to.0 V. Rise Time *,* tr IS =.0 A. μs Turn-off delay Time *,* td(off) VDD = 0 V, VGS =.0 to 0 V.9 Fall Time *,* tf IS =.0 A.3 μs Total Gate Charge * Qg VDD = 0 V Gate-source Charge * Qgs VGS = 0 to.0 V, 9 nc Gate-drain Charge * Qgd IS =.0 A Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. * Guaranteed by design, not subject to production testing * Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Note:Measurement circuit VDD = 0 V IS =.0 A RL =. Ω S Vout Vin 90 % Rg 0 % G Vin G Rg Vout 90 % 0 % 0 % 90 % V 0 V PW = 0 μs D.C. % 0 Ω S td(on) tr td(off) tf of

Established : 0-0- Doc No. TT-EA-90 Revision. Source Current IS ( A ) 0 0 Technical Data ( reference ) IS - VSS RSS(on) - IS. V.0 V 3. V 3. V VGS =. V 0 0.0 0. 0. 0. Source-source ON-state Resistance RSS (on) ( mω ) 7 3 FCB0L. V 3.V 3.V VGS =. V 3 7 9 Source Current IS ( A ) 0 0. Source-source Voltage VSS (V) Source Current IS (A) IS - VGS RSS(on) - VGS 0 C 0.0 0... Source-source ON-state Resistance RSS (on) ( mω ) 0 0 IS =.0 A C 3 Gate-source Voltage VGS ( V ) Gate-source Voltage VGS ( V ) Diode Forward Current IF ( A ) 00 0 0. 0.0 IF - VF IGS - VGS C 0 0. 0. 0. 0.. Gate-source Leakage Current IGS ( A ).E-0.E-0 C.E-0.E-0.E-0 0 0 Body Diode Forward Voltage VF ( V ) Gate-source Voltage VGS (V) 3 of

Established : 0-0- Doc No. TT-EA-90 Revision. Zero Gate Voltage Source Current ISS ( A ).E-03.E-0.E-0.E-0.E-07.E-0.E-09.E-0 Technical Data ( reference ) FCB0L ISS - VSS Dynamic Input/Output Characteristics C 0 0 0 Gate - source Voltage VGS ( V ).0..0 3. 3.0..0..0 0. 0.0 IS =.0A 0 V V VDD = V 0 0 0 30 0 Normalized Effective Transient Thermal Impedance Thermal Resistance Rth ( C/W ) 000 00 0 Source-source Voltage VSS ( V ) Ta = C, Mounted on FR board (. mm. mm t.0 mm ) using the minimum recommended pad size (3μm Copper ). 0. 0.000 0.00 0.0 0. 0 00 000 0 0. 0.0 Duty Cycle = 0. 0. 0. 0.0 0.0 Single Pulse Pulse Width tsw ( s ) Thermal Response Ta = C, Mounted on FR board (. mm. mm t.0 mm ) using the minimum recommended pad size (3μm Copper ). 0.00 0.000 0.00 0.0 0. 0 00 000 Square Wave Pulse Duration ( s ) Source Current IS ( A ) Gate Charge ( nc ) Rth - tsw Safe Operating Area 000 limited by RSS(on) (VGS = 3. V) 00 PW = 0 μs 00 μs 0 ms 3 ms ms 00m s 0. DC Ta = C, Mounted on FR board (. mm. mm t.0 mm ) using the minimum recommended pad size (3μm Copper ). 0.0 0. 0 00 Source-source Voltage VSS ( V ) of

Established : 0-0- Doc No. TT-EA-90 Revision. FCB0L MLGA00-W-7-RA.±0.0 Unit: mm (0.).7±0.0 3 0. +0.0-0.0 φ0.30±0.03 (0.) Land Pattern (Reference) (Unit: mm) φ0.3 of

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