Silicon NPN Phototransistor

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Silicon NPN Phototransistor VEMT37 DESCRIPTION 9 8553 VEMT37 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-2 package for surface mounting on printed boards. The device is sensitive to visible and near infrared radiation. FEATURES Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times Angle of half sensitivity: ϕ = ± 6 Package notch indicates collector Package matched with IR emitter series VSML37 Floor life: 168 h, MSL 3, acc. J-STD-2 Lead (Pb)-free reflow soldering Compliant to RoHS directive 22/95/EC and in accordance to WEEE 22/96/EC APPLICATIONS Photo interrupters Miniature switches Counters Encoders Position sensors Ligth sensors PRODUCT SUMMARY COMPONENT I ca (ma) ϕ (deg) λ.1 (nm) VEMT37.5 ± 6 5 to 8 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMT37-GS8 Tape and reel MOQ: 75 pcs, 15 pcs/reel PLCC-2 VEMT37-GS18 Tape and reel MOQ: 8 pcs, 8 pcs/reel PLCC-2 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 5 V Collector current I C 5 ma Collector peak current t p /T.1, t p μs I CM ma Power dissipation P V mw Junction temperature T j C Operating temperature range T amb - to + C Storage temperature range T stg - to + C Soldering temperature Acc. reflow solder profile fig. T sd 26 C Thermal resistance junction/ambient Soldered on PCB with pad dimensions: mm x mm R thja K/W ** Please see document Vishay Material Category Policy : www.vishay.com/doc?9992 Document Number: 8178 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 1.6, 1-Jul- 1

VEMT37 Silicon NPN Phototransistor P V - Power Dissipation Limit (mw) 125 75 5 25 R thja = K/W 2 3 5 6 7 8 9 2376 T amb - Ambient Temperature ( C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I C = 1 ma V (BR)CEO 7 V Collector emitter dark current V CE = 2 V, E = I CEO 1 2 na Collector emitter capacitance, f = 1 MHz, E = C CEO 3 pf Collector light current E e = 1 mw/cm 2, λ = 95 nm, BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) I ca.25.5 ma Angle of half sensitivity ϕ ± 6 deg Wavelength of peak sensitivity λ p 85 nm Range of spectral bandwidth λ.1 5 to 8 nm Collector emitter saturation voltage Rise time, fall time E e = 1 mw/cm 2, λ = 95 nm, I C =.1 ma V S = 5 V, I C = 1 ma, λ = 95 nm, R L = 1 kω V S = 5 V, I C = 1 ma, λ = 95 nm, R L = Ω V CEsat.15.3 V t r /t f 6 μs t r /t f 2 μs Cut-off frequency V S = 5 V, I C = 2 ma, R L = Ω f c 18 khz 2. I CEO - Collector Dark Current (na) 3 2 1 V CE = 2 V I ca rel - Relative Collector Current 1.8 1.6 1. 1.2 1..8 E e = 1 mw/cm 2 λ = 95 nm 9 83 2 6 8 T amb - Ambient Temperature ( C).6 2 6 8 9 8239 T amb - Ambient Temperature ( C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 8178 2 Rev. 1.6, 1-Jul-

Silicon NPN Phototransistor VEMT37 I ca - Collector Light Current (ma) 1.1.1.1.1.1 1 9 8316 λ = 95 nm E e - Irradiance (mw/cm²) t on /t off - Turn-on/Turn-off Time (µs) 8 6 2 9 8293 R L = Ω λ = 95 nm 2 6 8 12 1 t off t on I C - Collector Current (ma) Fig. - Collector Light Current vs. Irradiance Fig. 7 - Turn-on/Turn-off Time vs. Collector Current I ca - Collector Light Current (ma) 1 9 8317 λ = 95 nm.1.1 1 E e = 1 mw/cm 2.5 mw/cm 2.2 mw/cm 2 V CE - Collector Emitter Voltage (V) Fig. 5 - Collector Light Current vs. Collector Emitter Voltage S (λ) rel - Relative Spectral Sensitivity 1..8.6..2 6 8 9 838 λ - Wavelength (nm) Fig. 8 - Relative Spectral Sensitivity vs. Wavelength C CEO - Collector Emitter Capacitance (pf) 9 829 8 6 2 f = 1 MHz.1 1 V CE - Collector Emitter Voltage (V) S rel - Relative Sensitivity 1..9.8.7 9 8318.6..2 2 3 5 6 7 8 ϕ - Angular Displacement Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement Document Number: 8178 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 1.6, 1-Jul- 3

VEMT37 Silicon NPN Phototransistor PACKAGE DIMENSIONS in millimeters Mounting Pad Layout 1.2 area covered with solder resist 2.6 (2.8) 1.6 (1.9) 2873 SOLDER PROFILE Temperature ( C) 3 25 2 15 5 255 C 2 C 217 C max. 12 s max. ramp up 3 C/s max. 26 C 25 C max. 3 s max. s max. ramp down 6 C/s 5 15 2 25 3 1981 Time (s) Fig. - Lead (Pb)-free Reflow Solder Profile acc. J-STD-2 DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 168 h Conditions: T amb < 3 C, RH < 6 % Moisture sensitivity level 3, acc. to J-STD-2. DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-2 or label. Devices taped on reel dry using recommended conditions 192 h at C (+ 5 C), RH < 5 %. www.vishay.com For technical questions, contact: detectortechsupport@vishay.com Document Number: 8178 Rev. 1.6, 1-Jul-

Silicon NPN Phototransistor VEMT37 TAPE AND REEL PLCC-2 components are packed in antistatic blister tape (DIN IEC (CO) 56) for automatic component insertion. Cavities of blister tape are covered with adhesive tape. component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. 12. 9. Adhesive tape Blister tape Component cavity 9 867 Fig. 11 - Blister Tape Identification Label: Vishay type group tape code production code quantity 18 178.5 3.5 2.5 1.5 13. 12.75 1. max. 63.5 6.5 9 8665 3.5 3.1 2.2 2. Fig. 1 - Dimensions of Reel-GS8 1.6 1..1 3.9 2.5 1.95 Fig. 12 - Tape Dimensions in mm for PLCC-2 MISSING DEVICES.1 3.9 5.75 5.25 1.85 1.65 A maximum of.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. De-reeling direction 3.6 3. 8.3 7.7.25. 3.6 9 8668 9 8158 Identification Label: Vishay type group tape code production code quantity 321 329 12.5 3.5 2.5 1.5 Fig. 15 - Dimensions of Reel-GS18 COVER TAPE REMOVAL FORCE 13. 12.75 1. max.. 8. 62.5 6. 18857 The removal force lies between.1 N and 1. N at a removal speed of 5 mm/s. In order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 18 with regard to the feed direction. > 16 mm Tape leader empty compartments Carrier leader min. 75 empty compartments Carrier trailer Fig. 13 - Beginning and End of Reel The tape leader is at least 16 mm and is followed by a carrier tape leader with at least empty compartments. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least Document Number: 8178 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 1.6, 1-Jul- 5

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