[ /Title /Subject /Autho /Keyords ) /Cretor /DOCI FO dfark /Pageode /Useutines /DOC- IEW dfark Semiconductor General Purpose Transistor Arrays The CA8 and CA8A consist of four general purpose silicon NPN transistors on a common monolithic substrate. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility. The transistors of the CA8 and the CA8A are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits but in addition they provide the advantages of close electrical and thermal matching inherent in integrated circuit construction. The CA8A is similar to the CA8 but features tighter control of current gain, leakage, and offset parameters making it suitable for more critical applications requiring premium performance. Part Number Information PART NUMBER TEMP. RANGE ( o C) OBSOLETE PRODUCT NO RECOMMENDED REPLACEMENT Call Central Applications -8--777 or email: centapp@harris.com PACKAGE PKG. NO. CA8 (obsolete) - to Pin Metal Can T.B CA8A - to Pin Metal Can T.B Features CA8, CA8A Matched Monolithic General Purpose Transistors h FE Matched.................................. ±% V BE Matched - CA8A................................... ±mv - CA8.................................... ±mv Operation From DC to MHz Wide Operating Current Range CA8A Performance Characteristics Controlled from µa to ma Low Noise Figure.................dB (Typ) at khz Full Military Temperature Range....... - o C to o C Applications Two Isolated Transistors and a Darlington Connected Transistor Pair for Low Power Applications at Frequencies from DC through the VHF Range Custom Designed Differential Amplifiers Temperature Compensated Amplifiers See Application Note, AN9 Application of the CA8 Integrated Circuit Transistor Array for Suggested Applications Pinout January 999 File Number 8. CA8, CA8A (METAL CAN) TOP VIEW Q SUBSTRATE Q 9 Q Q 8 7 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Copyright Harris Corporation 999
CA8, CA8A Absolute Maximum Ratings CA8 Collector-to-Emitter Voltage, V CEO.......... V Collector-to-Base Voltage, V CBO............ V Collector-to-Substrate Voltage, V CIO (Note ).. V Emitter-to-Base Voltage, V EBO............. V Collector Current, I C..................... ma CA8A V V V V ma Thermal Information Thermal Resistance (Typical, Note ) θ JA ( o C/W) θ JC ( o C/W) Metal Can Package............... Maximum Power Dissipation (Any One Transistor)....... mw Maximum Junction Temperature........................7 o C Maximum Storage Temperature Range.......... - o C to o C Maximum Lead Temperature (Soldering s)............ o C Operating Conditions Temperature Range......................... - o C to o C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES:. The collector of each transistor of the CA8 and CA8A is isolated from the substrate by an integral diode. The substrate (Terminal ) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.. θ JA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications CA8 CA8A DC CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS Collector Cutoff Current (Figure ) I CBO V CB = V, I E = -. -. na Collector Cutoff Current (Figure ) I CEO V CE = V, I B = - See Fig. - See Fig.. µa Collector Cutoff Current Darlington Pair I CEOD V CE = V, I B = - - - - - µa Collector-to-Emitter Breakdown Voltage V (BR)CEO I C = ma, I B = - - V Collector-to-Base Breakdown Voltage V (BR)CBO I C = µa, I E = - - V Emitter-to-Base Breakdown Voltage V (BR)EBO I E = µa, I C = 7-7 - V Collector-to-Substrate Breakdown Voltage V (BR)CIO I C = µa, I CI = - - V Collector-to-Emitter Saturation Voltage V CES I B = ma, I C = ma -. - -.. V Forward Current Transfer Ratio (Note ) (Figure ) h FE I C = ma - - - - I C = ma - I C = µa - - - - Magnitude of Static-Beta Ratio (Isolated Transistors Q and Q ) (Figure ), I C = I C = ma.9.97 -.9.97 - - Forward Current Transfer Ratio Darlington Pair (Q and Q ) (Figure ) h FED I C = ma - - - I C = µa - - - 8 - - Base-to-Emitter Voltage (Figure ) V BE I E = ma -.7 -..7.8 V I E = ma -.8 - -.8.9 V Input Offset Voltage (Figures, 7) V BE, I E = ma -.8 -.8 mv V BE Temperature Coefficient: Base-to-Emitter Voltage Q, Q (Figure ) V BE ----------------- T, I E = ma - -.9 - - -.9 - mv/ o C
CA8, CA8A Electrical Specifications (Continued) CA8 CA8A PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS Base (Q )-to-emitter (Q ) Voltage Darlington Pair (Figure 8) V BED (V 9- ) I E = ma -. - -.. V I E = ma -. -... V Temperature Coefficient: Base-to-Emitter Voltage Darlington Pair (Q and Q ) (Figure 9) V BED --------------------- T, I E = ma -. - -. - mv/ o C Temperature Coefficient: Magnitude of Input Offset Voltage DYNAMIC CHARACTERISTICS Low Frequency Noise Figure (Figures - ) Low Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure ) Short Circuit Input Impedance (Figure ) Open Circuit Output Impedance (Figure ) Open Circuit Reverse Voltage Transfer Ratio (Figure ) V BE V BE ------------------------------------ T V CC = V, V EE = -V, I C = I C = ma NF f = khz,, I C = µa, Source Resistance = kω h FE f = khz,, I C = ma h IE f = khz,, I C = ma h OE f = khz,, I C = ma h RE f = khz,, I C = ma - - - - µv/ o C -. - -. - db - - - - - -. - -. - kω -. - -. - µs -.8 x - - -.8 x - - - Admittance Characteristics Forward Transfer Admittance (Figure ) Y FE f = MHz,, I C = ma - - j. - - - j. - ms Input Admittance (Figure ) Y IE f = MHz,, I C = ma -. + j. - -. + j. - ms Output Admittance (Figure ) Y OE f = MHz,, I C = ma -. + j. - -. + j. - ms Reverse Transfer Admittance (Figure 7) Y RE f = MHz,, I C = ma See Figure 7 ms Gain Bandwidth Product (Figure 8) f T, I C = ma - - MHz Emitter-to-Base Capacitance C EB V EB = V, I E = -. - -. - pf Collector-to-Base Capacitance C CB V CB = V, I C = -.8 - -.8 - pf Collector-to-Substrate Capacitance C CI V CI = V, I C = -.8 - -.8 - pf NOTE:. Actual forcing current is via the emitter for this test.
CA8, CA8A Typical Performance Curves COLLECTOR CUTOFF CURRENT (na) - - - - I E = V CB = V V CB = V V CB = V 7 COLLECTOR CUTOFF CURRENT (na) - - I B = V CE = V V CE = V - 7 FIGURE. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT vs TEMPERATURE FIGURE. TYPICAL COLLECTOR-TO-EMITTER CUTOFF CURRENT vs TEMPERATURE STATIC FORWARD CURRENT TRANSFER RATIO (h FE ) 9 8 7 h FE h FE ------------- OR h FE ------------- h FE h FE....9.8 BETA RATIO STATIC FORWARD CURRENT TRANSFER RATIO FOR DARLINGTON PAIR (h FED ) 8 7. FIGURE. TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO AND BETA RATIO FOR TRANSISTORS Q AND Q vs EMITTER CURRENT FIGURE. TYPICAL STATIC FORWARD CURRENT - TRANSFER RATIO FOR DARLINGTON CONNECTED TRANSISTORS Q AND Q vs EMITTER CURRENT BASE-TO-EMITTER VOLTAGE (V).8.7.. V BE V IO = V BE - V BE.... INPUT OFFSET VOLTAGE Q AND Q (mv) BASE-TO-EMITTER VOLTAGE (V)..9.8.7.. I E = ma I E = ma I E =.ma. -7 - - 7 FIGURE. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE CHARACTERISTIC AND INPUT OFFSET VOLTAGE FOR Q AND Q vs EMITTER CURRENT FIGURE. TYPICAL BASE-TO-EMITTER VOLTAGE CHARACTERISTIC FOR EACH TRANSISTOR vs TEMPERATURE
CA8, CA8A Typical Performance Curves (Continued) OFFSET VOLTAGE (mv).7.. I E = ma I E = ma I E =.ma BASE-TO-EMITTER VOLTAGE FOR DARLINGTON PAIR (V).7.... -7 - - 7 FIGURE 7. TYPICAL OFFSET VOLTAGE CHARACTERISTIC vs TEMPERATURE.. FIGURE 8. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC FOR DARLINGTON PAIR (Q AND Q ) vs EMITTER CURRENT BASE-TO-EMITTER VOLTAGE FOR DARLINGTON PAIR (V).7.. I E = ma I E = ma I E =.ma NOISE FIGURE (db) R S = Ω f =.khz f = khz f = khz.7-7 - - 7.. FIGURE 9. TYPICAL STATIC INPUT VOLTAGE CHARACTERISTIC FOR DARLINGTON PAIR (Q AND Q ) vs TEMPERATURE FIGURE. NOISE FIGURE vs COLLECTOR CURRENT R S = Ω R S = Ω NOISE FIGURE (db) f =.khz f = khz f = khz NOISE FIGURE (db) f =.khz f = khz f = khz.. FIGURE. NOISE FIGURE vs COLLECTOR CURRENT.. FIGURE. NOISE FIGURE vs COLLECTOR CURRENT
CA8, CA8A Typical Performance Curves (Continued) NORMALIZED h PARAMETERS. f = khz h RE h IE h FE = h IE =.kω h RE =.88 x - h OE =.µs AT ma h OE h FE h RE h IE.... FORWARD TRANSFER CONDUCTANCE (g FE ) OR SUSCEPTANCE (b FE ) (ms) - COMMON T A = o EMITTER CIRCUIT, BASE INPUT C,, I C = ma b FE g FE -. FIGURE. h PARAMETERS vs COLLECTOR CURRENT FIGURE. FORWARD TRANSFER ADMITTANCE (Y FE ) INPUT CONDUCTANCE (g IE ) OR SUSCEPTANCE (b IE ) (ms) COMMON EMITTER CIRCUIT, BASE INPUT,, I C = ma g IE b IE OUTPUT CONDUCTANCE (g OE ) OR SUSCEPTANCE (b OE ) (ms) COMMON EMITTER CIRCUIT, BASE INPUT,, I C = ma b OE g OE.. FIGURE. INPUT ADMITTANCE (Y IE ) FIGURE. OUTPUT ADMITTANCE (Y OE ) REVERSE TRANSFER CONDUCTANCE (g RE ) OR SUSCEPTANCE (b RE ) (ms) -. -. -. COMMON EMITTER CIRCUIT, BASE INPUT,, I C = ma g RE IS SMALL AT FREQUENCIES LESS THAN MHz b RE -. GAIN BANDWIDTH PRODUCT (MHz) 9 8 7 7 8 9 FIGURE 7. REVERSE TRANSFER ADMITTANCE (Y RE ) FIGURE 8. TYPICAL GAIN BANDWIDTH PRODUCT (f T )vs COLLECTOR CURRENT
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