Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors Features Low Phase Noise Oscillator Transistor mw Driver Amplifier Transistor Operation to GHz Available as Available in Hermetic Surface Mount Packages Description The series of high f T NPN medium power bipolar transistors are designed for usage in oscillators to GHz and for moderate power driver amplifiers through 3 GHz with noise figure below db. This industry standard transistor is available as a chip for hybrid oscillator circuits or in hermetic ceramic packages for military usage. The chip and hermetic packages may be screened to JANTXV equivalent levels. Case Styles V3. The MPT3 transistors utilize sub-micron photolithography and locos oxidation techniques to minimize parasitic capacitances. It also reduces shot noise enabling improved low noise characteristics. These transistors use a high temperature refractory barrier/gold metalization process. The MPT3 transistor is emitter ballasted using ion implanted polysilicon resistors to prevent emitter current hot spots at high current operation. M-Pulse Microwave 1
Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors Absolute Maximum Ratings @ 5 C Parameter Symbol Unit V3. Collector-Base Voltage 1 V CBO Volts 5 5 Collector-Emitter Voltage 1 V CEO Volts 1 1 Emitter-Base Voltage 1 V EBO Volts 1.5 1.5 Collector Current 1 I C ma 11 11 Junction Temperature T j C Storage Temperature T STG C -5 to + -5 to + Power Dissipation 1,3 P T mw 1 Operating Temperature T CP C 15 15 1. At 5 C case temperature (packaged transistors) or 5 C mounting surface temperature (chip transistors).. Case or bonding surface temperature. Derate maximum power dissipation rating to zero watts at maximum operating temperature. 3. The thermal resistance of the junction/case is 5 C/watt nominal. Electrical Specifications @ 5 C Parameter Condition Symbol Units Gain Bandwidth Product V CE = 1 volts f T GHz 7 typ 7 typ Insertion Power Gain V CE = 1 volts S 1E db f = 1 GHz 1 min 11 min f = GHz typ typ Noise Figure V CE = 1 volts NF db I C = ma f = 1 GHz 3 typ 3 typ Unilateral Gain V CE = 1 volts GTU (max) ab f = GHz 11 typ 1.5 typ Maximum Available Gain V CE = 1 volts MAG db f = GHz 15 typ 15 typ Power Out at 1 db Compression V CE = 1 volts P 1dB dbm f = 1 GHz typ typ f = GHz typ typ pecification Subject to Change Without Notice M-Pulse Microwave
Moderate Power High ft NPN Silicon Transistor Electrical Specifications @ 5 C Parameter Condition Symbol Min Typical Max Units Collector Cut-off Current V CB = 15 volts I CBO 1 µa I E = µa Emitter Cut-off Current V EB = 1 volt I EBO 1 µa I C = µa Forward Current Gain V CE = volts h FE 9 5 I C = 5 ma Collector Base V CB = 1 volts C CB.. pf Junction Capacitance I E = µa f = 1 MHz V. Typical Scattering Parameters in the MIcro-X Package V CE = 1 Volts, I C = 1 ma Frequency S11E S1E S1E SE 1.59-157 3.1..11 7..37-73..1 177.373..17 7.3. -9.7 3.59 153 1.5..1 9..53-113..79 133 1.355.1.173 3.9.9-13.5 5.79 115 1.1 9.1.7 3..31-1..99 9 1.3-7.. 7.1.37 17. 7 1.13 75.973 -..9 1.5.39 157. 1.1 53.7-1..3 13..559 135. 9 1.11 3.773-5..3.5.757 11. 1 1.11 13.77-73..5 9..99 13. 11 1.11 13.77-73..5 9..99 13. V CE = 1 Volts, I C = ma Frequency S11E S1E S1E SE 1.57-153.51 9.3.13 3.1.33-7..591 17.33.3.1 3.1.39-1. 3.35 17 1.777 5.3.15 3.9.5-1..9 1 1.5 7.5.11 3.1.17-151.3 5.7 11 1.9 11.1.15 9.. -19..9 51 1.1-5.3. 5..31-17.7 7 1.1 7 1.9-3.1.5 19..3 15. 1.1 5 1. -.9.37 1.1.57 13.3 9 1.15 7.75 -..399.3.5 115.1 1 1.17.73-79.5.5 13.5.7 11.7 11 1.17.73-79.5.5 13.5.7 11.7 M-Pulse Microwave 3
Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors V3. Typical Scattering Parameters in the MIcro-X Package ( Continued ) V CE = 1 Volts, Frequency S11E S1E S1E SE 1.571-1.1..9 35.3. -3..3 1.533 5..11 35..19-15. 3.5 11 1.75.5.1 35..17-17.1.71 13 1.5 7..17 33..13-17. 5.7 1 1.35 1..1 31..1-19..79 1.13 -..7.3.55 171. 7.9 1.5-3.1.9 1..317 153. 1.57.93 -..333 1..391 135. 9 1.11 5.15-57..39 5..5 11. 1 1.97 5.75-7..5 -.5.5 9.7 V CE = 1 Volts, I C = ma Frequency S11E S1E S1E SE 1.577-1.55.. 35.1. -7.9. 15.33.7.111 37.7. -. 3.5 1 1.7..1 3..15-1.3.71 13 1.3 7.1.171 3.5.19-17.9 5.7 15 1.15 1.. 3..1-17..7 1.5-5.. 9..5-1. 7.97 7.99 -.. 5..3-11.7 1.5.73-39..33 1.1.39-15.7 9 1. 5.7-55..39 9.7.5 15. 1 1. 7.3-73.3. -.7. 15.7 pecification Subject to Change Without Notice M-Pulse Microwave
Moderate Power High ft NPN Silicon Transistor V. Typical Performance Curves 1 1 1 1 1 DC SAFE OPERATING RANGE AT 5 C on 5C Heat Sink 1 1 1 COLLECTOR EMITTER VOLTAGE (Volts) TOTAL POWER DISSIPATION (mw) 1 9 7 5 3 1 POWER DERATING CURVES on 5C Heat Sink -5 5 5 75 1 15 15 175 AMBIENT TEMP (C) COLLECTOR-BASE CAPACITANCE (pf) 1.9..7..5 NOMINAL COLLECTOR-BASE CAPACITANCE vs COLLECTOR-BASE VOLTAGE (). 1 1 1 COLLECTOR-BASE VOLTAGE (Volts) GAIN (db) 1 1 1 1 NOMINAL GAIN vs FREQUENCY at V CE = 1 Volts and I C = ma (MAT335) S 1 GTU (MAX) 1 1 FREQUENCY (GHz) M-Pulse Microwave 5
Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors V3. Typical Performance Curves (Cont d) GAIN (db) 1 1 1 1 NOMINAL GAIN vs COLLECTOR CURRENT at F = GHz and V CE = 1 VOLTS () MAG GTU (MAX) S 1E 1 1 1 GAIN BANDWIDTH PRODUCT in GHz 7 5 3 NOMINAL GAIN BANDWIDTH PRODUCT (f T) vs COLLECTOR CURRENT at V CE = and 1 VOLTS () 1 VOLTS VOLTS 1 1 1 1 DC CURRENT GAIN 1 11 1 9 7 NOMINAL DC CURRENT GAIN (h FE) vs COLLECTOR CURRENT at V CE = VOLTS () 5 1 NOISE ASSOCIATD FIGURE(dB) GAIN (db) 1 1 1 1 1 NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs COLLECTOR CURRENT at 1 GHz and V CE = 1 VOLTS () ASSOCIATED GAIN NOISE FIGURE 1 1 1 P 1dB (dbm) 35 3 5 15 1 5 NOMINAL OUTPUT POWER at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT at F = 1 and GHz, V CE = VOLTS () 1 GHz GHz 5 1 15 5 3 35 5 5 55 pecification Subject to Change Without Notice M-Pulse Microwave
Moderate Power High ft NPN Silicon Transistor V. Case Styles B C A Base DIM. INCHES MILLIMETERS A.13.35 B.13.35 C.7.1 D (Dia.)..3 E ( Thickness).5.11 D Emitter Emitter E Collector Emitter B F PLCS. Base H INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A.9.1.3.7 B.79.7.1.1 C.7 1.7 D.19.5.. E.1...5 F.15 3.1 G.3...15 H 5 5 A C G D M-Pulse Microwave 7