PMEG6010CEH; PMEG6010CEJ

Similar documents
PMEG3005EB; PMEG3005EL

PMEG6002EB; PMEG6002TV

PMEG3030EP. 1. Product profile. 3 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

BAS16J. 1. Product profile. Single high-speed switching diode. 1.1 General description. 1.2 Features. 1.3 Applications. 1.4 Quick reference data

PMEG3020BER. 1. Product profile. 2 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BAS16VV; BAS16VY. Triple high-speed switching diodes. Type number Package Configuration. BAS16VV SOT666 - triple isolated BAS16VY SOT363 SC-88

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG4010ETP. 40 V, 1 A low VF MEGA Schottky barrier rectifier. Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply

RB521CS30L. 1. Product profile. 100 ma low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

High-speed switching diode

PMEG4010ER. 1. Product profile. 1 A low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMD5003K. 1. Product profile. MOSFET driver. 1.1 General description. 1.2 Features. 1.3 Applications. Quick reference data

RB520CS30L. 1. Product profile. 100 ma low V F MEGA Schottky barrier rectifier. 1.1 General description. 1.2 Features and benefits. 1.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Single Schottky barrier diode

60 V, 1 A PNP medium power transistors

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG2005EGW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PMEG4050ETP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PMEG3050BEP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

40 V, 0.75 A medium power Schottky barrier rectifier

Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption application

PMEG6030ELP. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

PMEG6045ETP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

65 V, 100 ma NPN/NPN general-purpose transistor. Type number Package PNP/PNP NPN/PNP complement complement

BC635; BCP54; BCX V, 1 A NPN medium power transistors

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

PMEG6020AELR. 60 V, 2 A low leakage current Schottky barrier rectifier

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

PMEG10020ELR. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

PMEG6010ELR. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PMEG6010ETR. Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection

High-speed switching diodes. Type number Package Configuration Package Nexperia JEITA JEDEC

PVR100AZ-B series. Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number Package SOT457 complement

BAS32L. 1. Product profile. High-speed switching diode. 1.1 General description. 1.2 Features and benefits. 1.3 Applications. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG060V100EPD. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

High-speed switching diode in dual series configuration, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

BAT54W series. 1. Product profile. 2. Pinning information. Schottky barrier diodes. 1.1 General description. 1.2 Features and benefits

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG2020EPK. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

30 V, 0.1 A low VF MEGA Schottky barrier rectifier. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F(AV)

NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PMEG030V030EPD. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PMEG100V080ELPD. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PMEG100V060ELPD. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

High-speed switching diodes. Type number Package Configuration Package NXP JEITA JEDEC

PMEG45U10EPD. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG40T50EP. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Ultrafast, epitaxial rectifier diode in a SOD113 (TO-220F) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PNP/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

PMEG6020EPAS. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

PMEG40T30ER. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG3002AESF. 30 V, 0.2 A low VF MEGA Schottky barrier rectifier. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit

PMEG4010ESB. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current [1] ma V R reverse voltage V V RRM

Ultrafast, epitaxial rectifier diode in a SOD59 (TO-220AC) plastic package. High frequency switched-mode power supplies

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BAV756S; BAW56 series

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PMEG2020CPAS. Symbol Parameter Conditions Min Typ Max Unit Per diode

High-speed switching in e.g. surface-mounted circuits

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

20 V, 0.5 A low VF MEGA Schottky barrier rectifier

NPN/PNP double low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BB Product profile. 2. Pinning information. 3. Ordering information. VHF variable capacitance diode. 1.1 General description. 1.

BAS16GW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current T j = 25 C V RRM

BAV102; BAV103. Single general-purpose switching diodes

BAS21GW. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

PMEG045T100EPD. 1. General description. 2. Features and benefits. 3. Applications. 4. Quick reference data

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Transcription:

Rev. 02 27 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in small and flat lead Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package Configuration Nexperia JEITA PMEG6010CEH SOD123F - single PMEG6010CEJ SOD323F SC-90 single 1.2 Features Forward current: I F 1A Reverse voltage: V R 60 V Very low forward voltage Small and flat lead SMD plastic packages 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I F forward current T sp 55 C - - 1 A V R reverse voltage - - 60 V V F forward voltage I F =1A [1] - 570 660 mv [1] Pulse test: t p 300 µs; δ 0.02.

2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol 1 cathode [1] 2 anode 1 2 1 2 sym001 001aab540 3. Ordering information [1] The marking bar indicates the cathode. 4. Marking Table 4. Ordering information Type number Package Name Description Version PMEG6010CEH - plastic surface-mounted package; 2 leads SOD123F PMEG6010CEJ SC-90 plastic surface-mounted package; 2 leads SOD323F Table 5. Marking codes Type number PMEG6010CEH PMEG6010CEJ Marking code CA EQ Product data sheet Rev. 02 27 March 2007 2 of 10

5. Limiting values 6. Thermal characteristics Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V R reverse voltage - 60 V I F forward current T sp 55 C - 1 A I FRM repetitive peak forward current t p 1 ms; δ 0.25-7 A I FSM non-repetitive peak forward current square wave; t p =8ms PMEG6010CEH - 9 A PMEG6010CEJ - 10 A P tot total power dissipation T amb 25 C PMEG6010CEH [1] - 375 mw [2] - 830 mw PMEG6010CEJ [1] - 350 mw [2] - 830 mw T j junction temperature - 150 C T amb ambient temperature 65 +150 C T stg storage temperature 65 +150 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2. Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient in free air [1] PMEG6010CEH [2] - - 330 K/W [3] - - 150 K/W PMEG6010CEJ [2] - - 350 K/W [3] - - 150 K/W R th(j-sp) thermal resistance from [4] junction to solder point PMEG6010CEH - - 60 K/W PMEG6010CEJ - - 55 K/W [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P R are a significant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2. [4] Soldering point of cathode tab. Product data sheet Rev. 02 27 March 2007 3 of 10

7. Characteristics Table 8. Characteristics T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V F forward voltage [1] I F = 1 ma - 210 250 mv I F = 10 ma - 270 310 mv I F = 100 ma - 350 400 mv I F = 500 ma - 460 530 mv I F = 700 ma - 510 580 mv I F = 1 A - 570 660 mv I R reverse current V R = 5 V - 0.8 - µa V R =10V - 1.1 - µa V R =60V - 11 50 µa C d diode capacitance V R =1V; f=1mhz - 60 68 pf [1] Pulse test: t p 300 µs; δ 0.02. Product data sheet Rev. 02 27 March 2007 4 of 10

10 4 006aaa758 10 5 006aaa759 I F (ma) 10 3 10 2 10 (1) (2) (3) (4) (5) I 10 4 R (µa) 10 3 10 2 10 1 10 1 (1) (2) (3) 1 10 2 10 3 (4) 10 1 0.0 0.2 0.4 0.6 0.8 V F (V) 10 4 0 20 40 60 V R (V) Fig 1. (1) T amb = 150 C (2) T amb = 125 C (3) T amb =85 C (4) T amb =25 C (5) T amb = 40 C Forward current as a function of forward voltage; typical values Fig 2. (1) T amb = 125 C (2) T amb =85 C (3) T amb =25 C (4) T amb = 40 C Reverse current as a function of reverse voltage; typical values 120 006aaa760 C d (pf) 80 40 0 0 20 40 60 V R (V) Fig 3. f = 1 MHz; T amb =25 C Diode capacitance as a function of reverse voltage; typical values Product data sheet Rev. 02 27 March 2007 5 of 10

8. Test information P t 1 t 2 duty cycle δ = t 1 t 2 t 006aaa812 Fig 4. Duty cycle definition 9. Package outline 1.7 1.5 1.2 1.0 1.35 1.15 0.80 0.65 1 1 0.5 0.3 0.55 0.35 3.6 3.4 2.7 2.5 2.7 2.3 1.8 1.6 2 2 0.70 0.55 0.25 0.10 0.40 0.25 0.25 0.10 Dimensions in mm 04-11-29 Dimensions in mm 04-09-13 Fig 5. Package outline SOD123F Fig 6. Package outline SOD323F (SC-90) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package Description Packing quantity 3000 10000 PMEG6010CEH SOD123F 4 mm pitch, 8 mm tape and reel -115-135 PMEG6010CEJ SOD323F [1] For further information and the availability of packing methods, see Section 14. Product data sheet Rev. 02 27 March 2007 6 of 10

11. Soldering 4.4 4 2.9 1.6 solder lands solder resist 2.1 1.6 1.1 1.2 solder paste occupied area 1.1 (2 ) Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 7. Reflow soldering footprint SOD123F 3.05 2.80 2.10 1.60 solder lands solder resist 1.65 0.95 0.50 0.60 occupied area 0.50 (2 ) 001aab169 solder paste Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 8. Reflow soldering footprint SOD323F (SC-90) Product data sheet Rev. 02 27 March 2007 7 of 10

12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEG6010CEH_PMEG6010CEJ_ 20070327 Product data sheet - PMEG6010CEJ_1 2 Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number PMEG6010CEH added Section 1.1 General description : amended Table 1 Product overview : added Table 7 Thermal characteristics : Table note 1 amended Section 8 Test information : added PMEG6010CEJ_1 20060414 Product data sheet - - Product data sheet Rev. 02 27 March 2007 8 of 10

13. Legal information 13.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. 13.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of anexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nexperia.com For sales office addresses, send an email to: salesaddresses@nexperia.com Product data sheet Rev. 02 27 March 2007 9 of 10

15. Contents 1 Product profile.......................... 1 1.1 General description...................... 1 1.2 Features.............................. 1 1.3 Applications........................... 1 1.4 Quick reference data..................... 1 2 Pinning information...................... 2 3 Ordering information..................... 2 4 Marking................................ 2 5 Limiting values.......................... 3 6 Thermal characteristics................... 3 7 Characteristics.......................... 4 8 Test information......................... 6 9 Package outline......................... 6 10 Packing information...................... 6 11 Soldering.............................. 7 12 Revision history......................... 8 13 Legal information........................ 9 13.1 Data sheet status....................... 9 13.2 Definitions............................. 9 13.3 Disclaimers............................ 9 13.4 Trademarks............................ 9 14 Contact information...................... 9 15 Contents.............................. 10 For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 27 March 2007