AO668 V Complementary MOSFET General Description The AO668 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and battery protection applications. RoHS and HalogenFree Compliant Product Summary NChannel PChannel V DS = 3V V ID= 3.4A (VGS=V) 3.3A (V GS =4.5V) R DS(ON) R DS(ON) < 6mΩ (V GS =V) < 75mΩ (V GS =4.5V) < 7mΩ (V GS =4.5V) < 5mΩ (V GS =.5V) < 9mΩ (V GS =.5V) < 35mΩ (V GS =.8V) Top View TSOP6 Bottom View Top View D D Absolute Maximum Ratings T A =5 C unless otherwise noted Parameter Symbol Max nchannel Max pchannel Units DrainSource Voltage 3 V Junction and Storage Temperature Range V DS GateSource Voltage ± ±8 V Continuous Drain Current Pulsed Drain Current C Power Dissipation B Pin T A =5 C T A =7 C T A =5 C T A =7 C V GS I D I DM P D T J, T STG G S G 6 5 3 4 3.4.7.5.8 D S D G 55 to 5 3.3.5 3.5.8 S nchannel G A W C S pchannel Thermal Characteristics Parameter Maximum JunctiontoAmbient A Maximum JunctiontoAmbient A D Maximum JunctiontoLead t s SteadyState SteadyState Symbol Typ Max 75 R qja 5 3 5 65 R qjl Units C/W C/W C/W Rev.: January 7 www.aosmd.com Page of 9
AO668 NChannel Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =5mA, V GS =V 3 V I DSS V DS =3V, V GS =V T J =55 C 5 I GSS GateBody leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =5mA.5.5 V R DS(ON) Zero Gate Voltage Drain Current Static DrainSource OnResistance V GS =V, I D =3.4A V GS =4.5V, I D =3A V GS =.5V, I D =A 46 6 T J =5 C 73 88 5 7 mw 6 9 mw g FS Forward Transconductance V DS =5V, I D =3.4A 4 S V SD Diode Forward Voltage I S =A,V GS =V.75 V I S Maximum BodyDiode Continuous Current.5 A DYNAMIC PARAMETERS C iss Input Capacitance 35 pf C oss Output Capacitance V GS =V, V DS =5V, f=mhz 35 pf C rss Reverse Transfer Capacitance 8 pf R g Gate resistance V GS =V, V DS =V, f=mhz.9.8.7 W SWITCHING PARAMETERS Q g (V) Total Gate Charge 6 nc Q g (4.5V) Total Gate Charge 3 nc V GS =V, V DS =5V, I D =3.4A Q gs Gate Source Charge.55 nc Q gd Gate Drain Charge.8 nc t D(on) TurnOn DelayTime.5 ns t r TurnOn Rise Time VGS=V, VDS=5V, RL=4.4Ω,.5 ns t D(off) TurnOff DelayTime RGEN=3Ω 6 ns t f TurnOff Fall Time ns t rr Body Diode Reverse Recovery Time I F =3.4A, di/dt=a/ms 6 ns Q rr Body Diode Reverse Recovery Charge I F =3.4A, di/dt=a/ms. nc A. The value of R qja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A =5 C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =5 C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C. Ratings are based on low frequency and duty cycles to keep initialt J =5 C. D. The R qja is the sum of the thermal impedence from junction to lead R qjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <3 ms pulses, duty cycle.5% max. F. These curves are based on the junctiontoambient thermal impedence which is measured with the device mounted on in FR4 board with oz. Copper, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. ma mw APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.: January 7 www.aosmd.com Page of 9
R DS(ON) (mw) I S (A) R DS(ON) (mw) Normalized OnResistance I D (A) I D (A) AO668 NChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V 5 V DS =5V 9 4.5V 3V 9 6 3 V GS =V 6 3 5 C 5 C 3 4 5 V DS (Volts) Fig : OnRegion Characteristics (Note E) < 88mΩ (V GS =.5V).5.5.5 3 V GS (Volts) Figure : Transfer Characteristics (Note E) 8 7 6 5 V GS =.5V V GS =4.5V V GS =V 4 4 6 8 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage (Note E).8.6.4..8 V GS =4.5V I D =3A V GS =V I D =3.4A 3 5 V GS =.5V I 5 D =A 5 5 75 5 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature 8 (Note E) 4.E I D =3.4A.E 4 8 5 C.E.E.E3 5 C 5 C 6 5 C.E4 4 4 6 8 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage (Note E).E5...4.6.8.. V SD (Volts) Figure 6: BodyDiode Characteristics (NoteE) Rev.: January 7 www.aosmd.com Page 3 of 9
Z qja Normalized Transient Thermal Resistance I D (Amps) Power (W) V GS (Volts) Capacitance (pf) AO668 NChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 V DS =5V I D =3.4A 4 3 C iss 6 4 C oss 3 4 5 6 7 Q g (nc) Figure 7: GateCharge Characteristics < 88mΩ C(V rss GS =.5V) 5 5 V DS (Volts) Figure 8: Capacitance Characteristics. T A =5 C... R DS(ON) limited T J(Max) =5 C T C =5 C DC ms ms... V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ms ms s. E5.. 3 5 Pulse Width (s) Figure : Single Pulse Power Rating JunctiontoAmbient (Note F) D=T on /T T J,PK =T A P DM.Z qja.r qja R qja =3 C/W In descending order D=.5,.3,.,.5,.,., single pulse.. Single Pulse P D T. E5.... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) T on Rev.: January 7 www.aosmd.com Page 4 of 9
AO668 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig RL Resistive Switching Test Circuit & Waveforms Charge Rg 9% % td(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L E = / LI AR AR BV DSS Rg Id Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev.: January 7 www.aosmd.com Page 5 of 9
AO668 PChannel Electrical Characteristics (T J =5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS DrainSource Breakdown Voltage I D =5mA, V GS =V V I DSS Zero Gate Voltage Drain Current V DS =V, V GS =V T J =55 C 5 ma I GSS GateBody leakage current V DS =V, V GS = ±8V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =5mA.4.65 V V GS =4.5V, I D =3.3A 63 75 mw T J =5 C 87 5 R DS(ON) Static DrainSource OnResistance V GS =.5V, I D =.5A 78 5 mw V GS =.8V, I D =A 96 35 mw g FS Forward Transconductance V DS =5V, I D =3.3A 3 S V SD Diode Forward Voltage I S =A,V GS =V.7 V I S Maximum BodyDiode Continuous Current.5 A DYNAMIC PARAMETERS C iss Input Capacitance 5 pf C oss Output Capacitance V GS =V, V DS =V, f=mhz 7 pf C rss Reverse Transfer Capacitance 5 pf R g Gate resistance V GS =V, V DS =V, f=mhz 5 3 W SWITCHING PARAMETERS Q g (4.5V) Total Gate Charge 6 nc Q gs Gate Source Charge V GS =4.5V, V DS =V, I D =3.3A.6 nc Q gd Gate Drain Charge.8 nc t D(on) TurnOn DelayTime ns t r TurnOn Rise Time V GS =4.5V, V DS =V, R L =4W, ns t D(off) TurnOff DelayTime R GEN =6W 6 ns t f TurnOff Fall Time 3 ns t rr Body Diode Reverse Recovery Time I F =3.3A, di/dt=a/ms 6 ns Q rr Body Diode Reverse Recovery Charge I F =3.3A, di/dt=a/ms 4 nc A. The value of R qja is measured with the device mounted on in FR4 board with oz. Copper, in a still air environment with T A =5 C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX) =5 C, using s junctiontoambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C. Ratings are based on low frequency and duty cycles to keep initialt J =5 C. D. The R qja is the sum of the thermal impedence from junction to lead R qjl and lead to ambient. E. The static characteristics in Figures to 6 are obtained using <3ms pulses, duty cycle.5% max. F. These curves are based on the junctiontoambient thermal impedence which is measured with the device mounted on in FR4 board with oz. Copper, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.: January 7 www.aosmd.com Page 6 of 9
R DS(ON) (mw) I S (A) R DS(ON) (mw) Normalized OnResistance I D (A) I D (A) AO668 PChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4.5V 4V 3.5V 3V 5 V DS =5V 5.5V V 5 C 5 5 5 C V GS =.5V 3 4 5 V DS (Volts) Fig : OnRegion Characteristics (Note E).5.5.5 3 V GS (Volts) Figure : Transfer Characteristics (Note E) 5.6 3.4 V GS =.5V I D =.5A 3 9 7 V GS =.8V V GS =.5V V GS =4.5V. V GS =.8V I D =A V 5 GS =4.5V I D =3.3A 5 5 4 6 8 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage (Note E).8 5 5 75 5 5 75 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature (Note E) 8 8 6 4 8 5 C I D =3.3A.E.E 4.E.E.E3 5 C 5 C 6 5 C.E4 4 4 6 8 V GS (Volts) Figure 5: OnResistance vs. GateSource Voltage (Note E).E5...4.6.8.. V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev.: January 7 www.aosmd.com Page 7 of 9
Z qja Normalized Transient Thermal Resistance I D (Amps) Power (W) V GS (Volts) Capacitance (pf) AO668 PChannel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 V DS =V I D =3.3A 8 3 6 C iss 4 C oss 3 4 5 6 Q g (nc) Figure 7: GateCharge Characteristics C rss 5 5 V DS (Volts) Figure 8: Capacitance Characteristics. T A =5 C... R DS(ON) limited T J(Max) =5 C T A =5 C DC... V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ms ms ms s. E5.. 3 5 Pulse Width (s) Figure : Single Pulse Power Rating JunctiontoAmbient (Note F) D=T on /T T J,PK =T A P DM.Z qja.r qja R qja =3 C/W In descending order D=.5,.3,.,.5,.,., single pulse.. Single Pulse T. E5.... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance (Note F) P D T on Rev.: January 7 www.aosmd.com Page 8 of 9
AO668 Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & Waveforms ton toff td(on) tr td(off) tf Rg 9% % Id L Unclamped Inductive Switching (UIS) Test Circuit & Waveforms E = / LI AR AR Rg Id BV DSS I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev.: January 7 www.aosmd.com Page 9 of 9