Lecture 21 - Multistage Amplifiers (I) Multistage Amplifiers. November 22, 2005

Similar documents
Multistage Amplifiers

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages. November 17, 2005

Lecture 33: Context. Prof. J. S. Smith

Reading. Lecture 33: Context. Lecture Outline. Chapter 9, multi-stage amplifiers. Prof. J. S. Smith

DC Coupling: General Trends

The Miller Approximation. CE Frequency Response. The exact analysis is worked out on pp of H&S.

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages

Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs

Current Supply Topology. CMOS Cascode Transconductance Amplifier. Basic topology. p-channel cascode current supply is an obvious solution

Chapter 7 Building Blocks of Integrated Circuit Amplifiers: Part D: Advanced Current Mirrors

Lecture 25 - Frequency Response of Amplifiers (III) Other Amplifier Stages. December 8, 2005

Lecture 19 Transistor Amplifiers (I) Common Source Amplifier. November 15, 2005

Lecture 19 - Transistor Amplifiers (I) Common-Source Amplifier. April 24, 2001

F7 Transistor Amplifiers

Building Blocks of Integrated-Circuit Amplifiers

CMOS Cascode Transconductance Amplifier

EE105 Fall 2015 Microelectronic Devices and Circuits

ECE 255, Discrete-Circuit Amplifiers

Chapter 15 Goals. ac-coupled Amplifiers Example of a Three-Stage Amplifier

Lecture 21: Voltage/Current Buffer Freq Response

EE105 Fall 2015 Microelectronic Devices and Circuits. Basic Single-Transistor Amplifier Configurations

UNIT I BIASING OF DISCRETE BJT AND MOSFET PART A

COMPARISON OF THE MOSFET AND THE BJT:

C H A P T E R 5. Amplifier Design

Lecture 030 ECE4430 Review III (1/9/04) Page 030-1

Microelectronic Devices and Circuits- EECS105 Final Exam

BJT Amplifier. Superposition principle (linear amplifier)

6.976 High Speed Communication Circuits and Systems Lecture 5 High Speed, Broadband Amplifiers

ECE 255, MOSFET Basic Configurations

Solid State Devices & Circuits. 18. Advanced Techniques

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

F9 Differential and Multistage Amplifiers

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi

EE105 Fall 2015 Microelectronic Devices and Circuits

Microelectronic Devices and Circuits Lecture 22 - Diff-Amp Anal. III: Cascode, µa Outline Announcements DP:

Lecture 34: Designing amplifiers, biasing, frequency response. Context

Building Blocks of Integrated-Circuit Amplifiers

Well we know that the battery Vcc must be 9V, so that is taken care of.

Unit 3: Integrated-circuit amplifiers (contd.)

Homework Assignment 12

ECE 255, MOSFET Amplifiers

ES 330 Electronics II Fall 2016

Week 12: Output Stages, Frequency Response

Current Mirrors. Basic BJT Current Mirror. Current mirrors are basic building blocks of analog design. Figure shows the basic NPN current mirror.

Digital Integrated CircuitDesign

MOSFET Amplifier Configuration. MOSFET Amplifier Configuration

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS

Single-Stage BJT Amplifiers and BJT High-Frequency Model. Single-Stage BJT Amplifier Configurations

Lecture (06) BJT Amplifiers 3

Design cycle for MEMS

Analysis and Design of Analog Integrated Circuits Lecture 8. Cascode Techniques

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers

Microelectronics Circuit Analysis and Design

Lecture 16. Complementary metal oxide semiconductor (CMOS) CMOS 1-1

In a cascade configuration, the overall voltage and current gains are given by:

IFB270 Advanced Electronic Circuits

MASSACHUSETTS INSTITUTE OF TECHNOLOGY Department of Electrical Engineering and Computer Science Microelectronic Devices and Circuits Fall 2009

The Common Source JFET Amplifier

Electronic Devices. Floyd. Chapter 6. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd

6.776 High Speed Communication Circuits Lecture 7 High Freqeuncy, Broadband Amplifiers

Fundamentals of Microelectronics. Bipolar Amplifier

Lecture #4 BJT AC Analysis

Chapter 13 Output Stages and Power Amplifiers

INTRODUCTION TO ELECTRONICS EHB 222E

SAMPLE FINAL EXAMINATION FALL TERM

EE 330 Lecture 26. Amplifier Biasing (precursor) Two-Port Amplifier Model

Carleton University. Faculty of Engineering and Design, Department of Electronics. ELEC 2507 Electronic - I Summer Term 2017

Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model

Device Technologies. Yau - 1

Microelectronics Circuit Analysis and Design

Lecture 7. ANNOUNCEMENTS MIDTERM #1 willbe held in class on Thursday, October 11 Review session will be held on Friday, October 5

Microelectronics Circuit Analysis and Design. Differential Amplifier Intro. Differential Amplifier Intro. 12/3/2013. In this chapter, we will:

Week 7: Common-Collector Amplifier, MOS Field Effect Transistor

I E I C since I B is very small

GOPALAN COLLEGE OF ENGINEERING AND MANAGEMENT Department of Electronics and Communication Engineering COURSE PLAN

Course Number Section. Electronics I ELEC 311 BB Examination Date Time # of pages. Final August 12, 2005 Three hours 3 Instructor

Microelectronics Circuit Analysis and Design

ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source

UNIVERSITY OF CALIFORNIA AT BERKELEY College of Engineering Department of Electrical Engineering and Computer Sciences. Discussion Notes #9

Lecture 3: Transistors

Last time: BJT CE and CB amplifiers biased by current source

Code: 9A Answer any FIVE questions All questions carry equal marks *****

Lecture 13 - Digital Circuits (II) MOS Inverter Circuits. October 25, 2005

ESE319 Introduction to Microelectronics High Frequency BJT Model & Cascode BJT Amplifier

Field Effect Transistors

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1

Lecture 12. Single Stage FET Amplifiers: Common Gate Amplifier Common Drain Amplifier. The Building Blocks of Analog Circuits - II

Lecture 020 ECE4430 Review II (1/5/04) Page 020-1

Scheme Q.1 Attempt any SIX of following: 12-Total Marks a) Draw symbol NPN and PNP transistor. 2 M Ans: Symbol Of NPN and PNP BJT (1M each)

Current Mirrors. Prof. Tai-Haur Kuo, EE, NCKU, Tainan City, Taiwan 4-1

Improving Amplifier Voltage Gain

Single-Stage Integrated- Circuit Amplifiers

EE 330 Lecture 20. Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling

ECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers

1. The fundamental current mirror with MOS transistors

Review Sheet for Midterm #2

ES 330 Electronics II Homework # 2 (Fall 2016 Due Wednesday, September 7, 2016)

PartIIILectures. Multistage Amplifiers

Electronic Circuits EE359A

Transcription:

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 2 Lecture 2 Multistage Amplifiers (I) Multistage Amplifiers November 22, 2005 Contents:. Introduction 2. CMOS multistage voltage amplifier 3. BiCMOS multistage voltage amplifier 4. BiCMOS current buffer 5. Coupling amplifier stages Reading assignment: Howe and Sodini, Ch. 9, 9.9.3

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 22 Key questions How can one build a wide range of highperformance amplifiers using the singletransistor stages studied so far? What are the most important considerations when assembling mulstistage amplifiers: regarding interstage loading? regarding interstage biasing?

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 23. Introduction Amplifier requirements are often demanding: must adapt to specific kinds of signal source and load, must deliver sufficient gain Singletransistor amplifier stages are very limited in what they can accomplish multistage amplifier. V DD signal source v s R S v R L signal load V S V SS Issues: What amplifying stages should be used and in what order? What devices should be used, BJT or MOSFET? How is biasing to be done?

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 24 2 Summary of single stage characteristics: stage A vo,g mo,a io R in R out key function CS G mo = g m r o //r oc transcond. amp. CD A vo g m g m g mb g m g mb voltage buffer CG A io g m g mb r oc //[r o ( g m R S )] current buffer CE G mo g m r π r o //r oc transcond. amp. CC A vo r π β(r o //r oc //R L ) g m R S voltage buffer β CB A io g m r oc //{r o [ g m (r π //R S )]} current buffer 2 Key differences between BJT s and MOSFETs: BJT MOSFET I B = I C β I G =0 g m = qi C kt > g m = 2 W L µc oxi D r o = V A I C > r o = λi D

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 25 2. CMOS multistage voltage amplifier 2 Goals: high voltage gain high R in low R out 2 Good starting point: CS stage R S r o //r oc vs v in g m (r o //r oc )v in v out R L R in = A vo = g m (r o //r oc ), probably insufficient R out = r o //r oc, too high

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 26 2 Add second CS stage to get more gain: R S r o //r oc r o2 //r oc2 vs v in g m (r o //r oc )v in v out =v in2 g m2 (r o2 //r oc2 )v in2 vout2 R L R in = A vo = g m (r o //r oc )g m2 (r o2 //r oc2 ) but R out = r o2 //r oc2, still high 2 Add CD stage at output: R S r o2 r oc2 g m3 g mb3 v s v in A vo v in v in3 v in3 g m3 g m3 g mb3 v out R L CS CS CD R in = A vo = g m (r o //r oc )g m2 (r o2 //r oc2 ) g m3, still high g mb3 R out = g m3 g mb3, now small g m3

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 27 3. BiCMOS multistage voltage amplifier 2 A vo (CE) > A vo (CS) because r o (BJ T ) > r o (M OSF ET ) and g m (BJ T ) > g m (M OSF ET ) but... CS stage is best first stage, since R in =. 2 Add CE stage following CS stage? R S r o r oc r o2 r oc2 v s v A r in vo v in v π2 A vo2 v in2 vout R in2 L CS CE Trouble is interstage loading degrades gain: R out = r o //r oc R in2 = r π2 Voltage divider between stages: R in2 r π2 r π2 = R out R in2 r o //r oc r π2 r o //r oc Additional gain provided by CE stage more than lost in interstage loading.

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 28 2 Use two CS stages, but add CC stage at output: R S r o2 r oc2 g m3 r o2 r oc2 β3 v s v in A vo A vo2 v v in in3 r π3 β 3 (r o3 r oc3 R L ) v in3 v out RL CS CS CC Interstage loading: R out2 = r o2 //r oc2, R in3 = r π3 β 3 (r o3 //r oc3 //R L ) Then, interstage loss: R in3 r π3 β 3 (r o3 //r oc3 //R L ) = R out2 R in3 r o2 //r oc2 r π3 β 3 (r o3 //r oc3 //R L ) better than trying to use a CE stage, but still pretty bad. Benefit is that R out has improved: R out2 r o2 //r oc2 R out = R out3 = = g m3 β 3 g m3 β 3 Since, in general, g m (BJ T ) > g m (M OSF ET ), R out could be better than CD output stage if r o2 //r oc2 is not too large. Otherwise, CD stage output is better.

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 29 2 Better voltage buffer: cascade CC and CD output stages. What is best order? Since R in (CD) =, best to place CD first: R r o2 r oc2 g m3 g g S mb3 m4 β 4 (g m3 g mb3 ) vs v in A vo A vo2 v in v in3 v in3 v in4 r π4 β 4 (R L r o4 r oc4 ) v in4 v out CS CS CD CC R L Interstage loading: R in3 = R out2 R in3 R in4 r π4 β 4 (r o4 //r oc4 //R L ) R = out3 R in4 g m3 r g π4 β 4 (r o4 //r oc4 //R L ) mb3 and excellent output resistance: R out3 R out = R out4 = = g m4 β 4 g m4 β 4 (g m3 g mb3 )

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 20 4. BiCMOS current buffer 2 Goals: Unity current gain very low R in very high R out Start with commonbase stage: i in i out i s R S /g m iin r oc //(βr o ) RL A io = R in = g m R out = r oc //{r o [ g m (r π //R S )]} Note that if R S is not too low, R out r oc //(βr o ). Can we further increase R out by adding a second CB stage?

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 2 2 CBCB current buffer: i in i in2 i out i s R S g m i in β r o r oc g m2 i in2 R L CB CB [ g m2 r o2 (r π2 β r o r oc )] r oc2 Now R out = R out2 = r oc2 //{r o2 [ g m2 (r π2 //R out )]} Plugging in R out r oc //(β r o ), R out = r oc2 //{r o2 [ g m2 (r π2 //r oc //β r o )]} But, since r π2 r oc //(β r o ), then R out r oc2 //[r o2 ( g m2 r π2 )] r oc2 //(β 2 r o2 ) Did not improve anything! The base current limits the number of CB stages that improve R out to just one. Since CG stage has no gate current, cascade it behind CB stage.

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 22 2 CBCG current buffer: i in i in2 i out i s R S g m i in β r o r oc g m2 i in2 R L CB CG [g m2 r o2 (β r o r oc )] r oc2 R out = R out2 = r oc2 //[r o2 ( g m2 R out )] with R out r oc //(β r o ), R out = r oc2 //[r o2 g m2 (r oc //β r o )] Now R out has improved by about g m2 r o2, but only to the extent that r oc2 is high enough...

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 23 5. Coupling amplifier stages 2 Capacitive coupling Capacitors of large enough value behave as AC short, so signal goes through but bias is independent for each stage. Example, CDCC voltage buffer: 5.0 V 5.0 V 4.0 V 2.5 V 3.2 V 2.5 V I SUP I SUP2 Assumes V BE = 0.7 V V GS =.5 V Advantages: can select bias point for optimum operation can select bias point close to middle of rails for maximum signal swing Disadvantages: to approximate AC short, need large capacitors that consume significant area

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 24 2 Direct coupling: share bias points across stages. Example, CDCC voltage buffer: 5.0 V 5.0 V 4.7 V 3.2 V 2.5 V I SUP I SUP2 Assumes V BE = 0.7 V V GS =.5 V Advantages: no capacitors: compact Disadvantages: bias point shared: constrains design bias shifts from stage to stage and can stray too far from center of range

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 25 Solution: use PMOS CD stage: 5.0 V 5.0 V I SUP 3.2 V.7 V 2.5 V I SUP2 Assumes V BE = 0.7 V =.5 V V GS Tradeoff: g m (PMOS)< g m (NMOS) higher R out In BiCMOS voltage amplifier: R out = g m4 β 4 (g m3 g mb3 )

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 26 2 Summary of DC shifts through amplifier stages: Amplifier Type Transistor Type NMOS PMOS npn pnp Common Source/ Common Emitter (CS/CE ) V V V V V V V V V V V V Common Gate/ Common Base (CG/CB) Common Drain/ Common Collector (CD/CC ) V V V V V V V V V V V V

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 27 Important difference in bias shift between stages in BJT and MOSFET amps: In BJT (for npn): V BE V BE,on rather independent of transistor size and current level. In MOSFET (for nmosfet): 2I D L V GS = V T µ n C ox W Can be engineered through bias current and transistor geometry. 5.0 V 5.0 V 4.7 V 3.2 V 2.5 V I SUP I SUP2 Assumes V BE = 0.7 V V GS =.5 V

6.02 Microelectronic Devices and Circuits Fall 2005 Lecture 28 Key conclusions To achieve amplifier design goals, several stages often needed. In multistage amplifiers, different stages used to accomplish different goals: voltage gain: commonsource, common emitter voltage buffer: commondrain, common collector current buffer: commongate, common base In multistage amplifiers must pay attention to interstage loading to avoid unnecessary losses. In directcoupled amplifiers, bias is shared between adjoining stages: must select compromise bias, must pay attention to bias shift from stage to stage.