Small Signal Zener Diodes FEATURES Zener voltage specified at 5 μa Maximum delta V Z given from μa to μa Very high stability Low noise AEC-Q qualified Material categorization: For definitions of compliance please see www.vishay.com/doc?9992 PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom..8 to 43 V Test current I ZT.5 ma V Z specification Pulse current Int. construction Single APPLICATIONS Voltage stabilization ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY TZS4678-GS8 to TZS477-GS8 25 (per 7" reel) 2 5/box PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS QuadroMELF SOD-8 34 mg n/a n/a 26 C/ s at terminals ABSOLUTE MAXIMUM RATINGS (T amb, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Power dissipation R thja 3 K/W P tot 5 mw Zener current I Z P tot /V Z ma Junction to ambient air On PC board 5 mm x 5 mm x.6 mm R thja 5 K/W Junction temperature T j 75 C Storage temperature range T stg -65 to +75 C Forward voltage (max.) I F = ma V F.5 V Rev..8, 2-Nov-3 Document Number: 8563 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
ELECTRICAL CHARACTERISTICS (T amb, unless otherwise specified) ZENER VOLTAGE RANGE TEST CURRENT REVERSE CURRENT (3) VOLTAGE CHANGE (4) PART NUMBER V Z at I ZT I ZT I ZT2 (2) I R at V R V Z V ma μa V V MIN. NOM. () MAX. MAX. MAX. TZS4678.7.8.89.5 2 7.5.7 TZS4679.9 2 2..5 5.7 TZS468 2.9 2.2 2.3.5 4.75 TZS468 2.28 2.4 2.52.5 95 2.8 TZS4682 2.565 2.7 2.835.5 9.85 TZS4683 2.85 3 3.5.5 85.8.9 TZS4684 3.35 3.3 3.465.5 8 7.5.5.95 TZS4685 3.42 3.6 3.78.5 75 7.5 2.95 TZS4686 3.75 3.9 4.95.5 7 5 2.97 TZS4687 4.85 4.3 4.55.5 65 4 2.99 TZS4688 4.465 4.7 4.935.5 6 3.99 TZS4689 4.845 5. 5.355.5 55 3.97 TZS469 5.32 5.6 5.88.5 5 4.96 TZS469 5.89 6.2 6.5.5 45 5.95 TZS4692 6.46 6.8 7.4.5 35 5..9 TZS4693 7.25 7.5 7.875.5 3.8 5.7.75 TZS4694 7.79 8.2 8.6.5 29 6.2.5 TZS4695 8.265 8.7 9.35.5 27.4 6.6. TZS4696 8.645 9. 9.555.5 26.2 6.9.8 TZS4697 9.5.5.5 24.8 7.6. TZS4698.45.55.5 2.6.5 8.4. TZS4699.4 2 2.6.5 2.4.5 9..2 TZS47 2.35 3 3.65.5 9.5 9.8.3 TZS47 3.3 4 4.7.5 7.5.5.6.4 TZS472 4.25 5 5.75.5 6.3.5.4.5 TZS473 5.2 6 6.8.5 5.4.5 2..6 TZS474 6.5 7 7.85.5 4.5.5 2.9.7 TZS475 7. 8 8.9.5 3.2.5 3.6.8 TZS476 8.5 9 9.95.5 2.5.5 4.4.9 TZS477 9 2 2.5.9. 5.2.2 TZS478 2.9 22 23..5.8. 6.7.22 TZS479 22.8 24 25.2.5 9.9. 8.2.24 TZS47 23.75 25 26.25.5 9.5. 9.25 TZS47 25.65 27 28.35.5 8.8. 2.4.27 TZS472 26.6 28 29.4.5 8.5. 2.2.28 TZS473 28.5 3 3.5.5 7.9. 22.8.3 TZS474 3.35 33 34.65.5 7.2. 25.33 TZS475 34.2 36 37.8.5 6.6. 27.3.36 TZS476 37.5 39 4.95.5 6.. 29.6.39 TZS477 4.85 43 45.5.5 5.5. 32.6.43 Notes () Tolerancing and voltage designation (V Z ). The type numbers shown have a standard tolerance of ± 5 % on the nominal zener voltage. (2) Maximum zener current ratings (I ZM ). Maximum zener current ratings are based on maximum zener voltage of the individual units (3) Reverse leakage current (I R ). Reverse leakage currents are guaranteed and measured at V R as shown on the table. (4) Maximum voltage change ( V Z ). Voltage change is equal to the difference between V Z at μa and V Z at μa. Rev..8, 2-Nov-3 2 Document Number: 8563 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
BASIC CHARACTERISTICS (T amb, unless otherwise specified) P tot - Total Power Dissipation (mw) 6 5 4 3 2 4 8 2 6 2 95 962 T amb - Ambient Temperature ( C) Fig. - Total Power Dissipation vs. Ambient Temperature TK VZ - Temperature Coefficient of V Z ( -4 /K) 95 96 5 5 I Z = 5 ma - 5 2 3 4 5 Fig. 4 - Temperature Coefficient of V Z vs. Z-Voltage 2 V Z - Voltage Change (mv) T j I Z = 5 ma C D - Diode Capacitance (pf) 5 5 V R = 2 V T j 95 9598 5 5 2 25 95 96 5 5 2 25 Fig. 2 - Typical Change of Working Voltage under Operating Conditions at T amb Fig. 5 - Diode Capacitance vs. Z-Voltage V Ztn - Relative Voltage Change.3 V Ztn = V Zt /V Z (25 C).2 TK VZ = x -4 /K 8 x -4 /K 6 x -4 /K. 4 x -4 /K 2 x -4 /K. - 2 x -4 /K - 4 x.9-4 /K.8-6 6 2 8 24 95 9599 T j - Junction Temperature ( C) I F - Forward Current (ma) T j....2.4.6.8 95965 V F - Forward Voltage (V). Fig. 3 - Typical Change of Working Voltage vs. Junction Temperature Fig. 6 - Forward Current vs. Forward Voltage Rev..8, 2-Nov-3 3 Document Number: 8563 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
5 I Z - Z-Current (ma) 8 6 4 2 P tot = 5 mw T amb I Z - Z-Current (ma) 4 3 2 P tot = 5 mw T amb 4 6 8 2 2 95 964 95 967 5 2 25 3 35 Fig. 7 - Z-Current vs. Z-Voltage Fig. 8 - Z-Current vs. Z-Voltage r Z - Differential Z-Resistance (Ω) I Z = ma 5 ma ma T j 5 5 2 95 966 25 Fig. 9 - Differential Z-Resistance vs. Z-Voltage Z thp - Thermal Resistance for Pulse Cond. (K/W) t p /T =.5 t p /T =.2 Single Pulse R thja = 3 K/W T = T j max. - T amb t p /T =. t p /T =. t p /T =.2 t p /T =.5 i ZM = (- V Z + (V 2 Z + 4r zj x T/Z thp ) /2 )/(2r zj ) - 2 t p - Pulse Length (ms) 95 963 Fig. - Thermal Response Rev..8, 2-Nov-3 4 Document Number: 8563 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
PACKAGE DIMENSIONS in millimeters (inches): QuadroMELF SOD-8 Cathode identification.7 (.67) glass.6 (.63).4 (.55).47 (.9) max. > R3 (R.8) glass 3.7 (.46) 3.3 (.3) The gap between plug and glass can be either on cathode or anode side Foot print recommendation:.25 (.49) min. 2.5 (.98) max. 2 (.79) min. 5 (.97) ref. 96 27 Rev..8, 2-Nov-3 5 Document Number: 8563 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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