FJAF68 FJAF68 High Voltage Color Display Horizontal Deflection Output High Collector-Base Breakdown Voltage : BV CBO = 5V High Switching Speed : (typ.) =.µs For Color Monitor TO-3PF.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T C =25 C unless otherwise noted Symbol Parameter Rating Units V CBO Collector-Base Voltage 5 V O Collector-Emitter Voltage 75 V V EBO Emitter-Base Voltage 6 V Collector Current (DC) A P * Collector Current (Pulse) 2 A P C Collector Dissipation 6 W T J Junction Temperature 5 C T STG Storage Temperature -55 ~ 5 C * Pulse Test: Pulse Width=5ms, Duty Cycle < % Electrical Characteristics T C =25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units ES Collector Cut-off Current V CB =4V, R BE = ma BO Collector Cut-off Current V CB =8V, I E = µa I EBO Emitter Cut-off Current V EB =4V, = ma BV EBO Emitter-Base Breakdown Voltage I E =5µA, = 6 V h FE DC Current Gain =5V, =A h FE2 =5V, =6A * Pulse Test: PW=2µs, duty Cycle=% Pulsed Thermal Characteristics T C =25 C unless otherwise noted 5 8 (sat) Collector-Emitter Saturation Voltage =6A, I B =.5A 3 V V BE (sat) Base-Emitter Saturation Voltage =6A, I B =.5A.5 V * Storage Time =2V, =6A, R L =33Ω 3 µs * Fall Time I B =.2A, I B2 = - 2.4A.2 µs Symbol Parameter Typ Max Units R θjc Thermal Resistance, Junction to Case 2.8 C/W 2 Fairchild Semiconductor Corporation Rev. A2, May 2
Typical Characteristics I B =2.A = 5V FJAF68 8 6 4 2 I B =.6A I B =.4A I B =.2A h FE, DC CURRENT GAIN 2 4 6 8 2 4. Figure. Static Characteristic Figure 2. DC current Gain = 5 I B = 3 I B (sat) [V], SATURATION VOLTAGE. (sat) [V], SATURATION VOLTAGE..... Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 4 2 = 5V = 6A, I B =.2A 8 6 4 2 25 C - 25 C...2.4.6.8..2. V BE [V], BASE-EMITTER VOLTAGE I B2 [A], REVERSE BASE CURRENT Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time 2 Fairchild Semiconductor Corporation Rev. A2, May 2
Typical Characteristics (Continued) = 6A, I B2 = - 2.4A I B =.A, I B2 = - 2.4A FJAF68... I B [A], FORWARD BASE CURRENT Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time 3 25 2 5 5 V BE (off) = - 3V R B2 =, I B = 5A = 3V, L = 2µH V BE (off) = - 6V. (Pulse) t = ms (DC) T C = 25 o C Sigle Pulse t = ms t = ms. Figure 9. Reverse Bias Safe Operating Area Figure. Forward Bias Safe Operating Area 8 7 P D [W], POWER DISSIPATION 6 5 4 3 2 25 5 75 25 5 75 2 T C [ o C], CASE TEMPERATURE Figure. Power Derating 2 Fairchild Semiconductor Corporation Rev. A2, May 2
Package Demensions FJAF68 TO-3PF 5.5 ±.2 4.5 ±.2 5.5 ±.2 ø3.6 ±.2 3. ±.2 (.5). ±.2 26.5 ±.2 6.5 ±.2 4.5 ±.2 2.5 ±.2 6.5 ±.2.85 ±.3.5 ±.2 23. ±.2 2 4.8 ±.2 4. ±.2.75 +.2. 3.3 ±.2 5.45TYP [5.45 ±.3] 5.45TYP [5.45 ±.3].9 +.2. 3.3 ±.2 5.5 ±.2 Dimensions in Millimeters 2 Fairchild Semiconductor Corporation Rev. A2, May 2
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