FCA47N60 / FCA47N60_F109

FCA47N60 / FCA47N60_F109 N-Channel SuperFET MOSFET 600 V, 47 A, 70 mω Features 650 V @ T J = 150 C Typ. R DS(on) = 58 mω Ultra Low Gate Charge (Typ. Q g = 210 nc) Low Effective Output Capacitance (Typ. C oss(eff.) = 420 pf) 100% Avalanche Tested Application Solar Invertor AC-DC Power Supply TO-3PN G D S Absolute Maximum Ratings Description September 2017 SuperFET MOSFET is Fairchild Semiconductor s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. G S D Symbol Parameter FCA47N60 FCA47N60_F109 Unit S Drain-Source Voltage 600 V Drain Current - Continuous (T C = 25 C) - Continuous (T C = 100 C) M Drain Current - Pulsed (Note 1) 141 A S Gate-Source voltage ± 30 V E AS Single Pulsed Avalanche Energy (Note 2) 1800 mj I AR Avalanche Current (Note 1) 47 A E AR Repetitive Avalanche Energy (Note 1) 41.7 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation (T C = 25 C) - Derate above 25 C T J, T STG Operating and Storage Temperature Range -55 to +150 C T L Maximum Lead Temperature for Soldering Purpose, 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit R θjc Thermal Resistance, Junction-to-Case, Max. -- 0.3 C/W R θja Thermal Resistance, Junction-to-Ambient, Max. -- 41.7 C/W 47 29.7 417 3.33 A A W W/ C 1

Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FCA47N60 FCA47N60 TO-3PN - - 30 FCA47N60 FCA47N60_F109 TO-3PN - - 30 Electrical Characteristics T C = 25 o C unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, = 250 μa, T J = 25 C 600 -- -- V ΔBS / ΔT J Breakdown Voltage Temperature Coefficient B Drain-Source Avalanche Breakdown Voltage = 0 V, = 250 μa, T J = 150 C -- 650 -- V = 250 μa, Referenced to 25 C -- 0.6 -- V/ C = 0 V, = 47 A SS Zero Gate Voltage Drain Current = 600 V, = 0 V = 480 V, T C = 125 C -- 700 -- V I GSSF Gate-Body Leakage Current, Forward = 30 V, = 0 V -- -- 100 na I GSSR Gate-Body Leakage Current, Reverse = -30 V, = 0 V -- -- -100 na On Characteristics (th) Gate Threshold Voltage =, = 250 μa 3.0 -- 5.0 R DS(on) Static Drain-Source On-Resistance = 10 V, = 23.5 A -- 0.058 0.07 g FS Forward Transconductance = 20 V, = 23.5 A -- 40 -- (th) Gate Threshold Voltage =, = 250 μa 3.0 -- 5.0 Dynamic Characteristics C iss Input Capacitance = 25 V, = 0 V, -- 5900 8000 pf C oss Output Capacitance f = 1.0 MHz -- 3200 4200 pf C rss Reverse Transfer Capacitance -- 250 -- pf C oss Output Capacitance = 480 V, = 0 V, f = 1.0 MHz -- 160 -- pf C oss eff. Effective Output Capacitance = 0 V to 400 V, = 0 V -- 420 -- pf -- -- -- -- 1 10 μa μa Switching Characteristics t d(on) Turn-On Delay Time V DD = 300 V, = 47 A -- 185 430 ns t r Turn-On Rise Time R G = 25 Ω -- 210 450 ns t d(off) Turn-Off Delay Time -- 520 1100 ns (Note 4) t f Turn-Off Fall Time -- 75 160 ns Q g Total Gate Charge = 480 V, = 47 A -- 210 270 nc Q gs Gate-Source Charge = 10 V -- 38 -- nc Q gd Gate-Drain Charge (Note 4) -- 110 -- nc Drain-Source Diode Characteristics I S Maximum Continuous Drain-Source Diode Forward Current -- -- 47 A I SM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A V SD Drain-Source Diode Forward Voltage = 0 V, I S = 47 A -- -- 1.4 V t rr Reverse Recovery Time = 0 V, I S = 47 A -- 590 -- ns Q rr Reverse Recovery Charge di F /dt =100 A/μs (Note 4) -- 25 -- μc Notes: 1. Repetitive Rating: Pulse-width limited by maximum junction temperature. 2. I AS = 18 A, R G = 25 Ω, starting T J = 25 C 3. I SD 47 A, di/dt 200 A/μs, V DD = 380 V, starting T J = 25 C 4. Essentially independent of operating temperature typical characteristics. 2

Typical Characteristics R DS(ON) [ Ω ],Drain-Source On-Resistance Figure 1. On-Region Characteristics 10 2 10 1 10 0 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 10-1 10 0 10 1, Drain-Source Voltage [V] 1. 250μ s Pulse Test 2. T C = 25 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.20 0.15 0.10 0.05 = 10V = 20V Note : T J = 25 0.00 0 20 40 60 80 100 120 140 160 180 200 R, Reverse Drain Current [A] 10 2 10 1 10 0 Figure 2. Transfer Characteristics 25 150-55 Note 1. = 40V 2. 250μ s Pulse Test 2 4 6 8 10, Gate-Source Voltage [V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 10 2 10 1 10 0 150 25 1. = 0V 2. 250μ s Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V SD, Source-Drain Voltage [V] Capacitance [pf] Figure 5. Capacitance Characteristics 30000 25000 20000 15000 10000 5000 C rss C iss C oss 0 10-1 10 0 10 1, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd 1. = 0 V 2. f = 1 MHz, Gate-Source Voltage [V] 12 10 8 6 4 2 Figure 6. Gate Charge Characteristics = 100V = 250V = 400V Note : = 47A 0 0 50 100 150 200 250 Q G, Total Gate Charge [nc] 3

Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature BS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 9. Safe Operating Area 10 2 10 1 10 0 10-1 Operation in This Area is Limited by R DS(on) 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse DC 1. = 0 V 2. = 250 μ A 10 ms 1 ms 100 us R DS(ON), (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 1. = 10 V 2. = 47 A 0.0-100 -50 0 50 100 150 200 T J, Junction Temperature [ o C] Figure 10. Maximum Drain Current vs. Case Temperature 50 40 30 20 10 10-2 10 0 10 1 10 2 10 3, Drain-Source Voltage [V] 0 25 50 75 100 125 150 T C, Case Temperature [ ] Figure 11. Transient Thermal Response Curve Z JC (t), Thermal Response θ D=0.5 10-1 0.2 1. Z JC (t) = 0.3 /W M ax. θ 2. D uty Factor, D =t 1 /t 2 3. T JM - T C = P DM * Z JC (t) θ 0.1 10-2 0.05 P DM 0.02 t 1 t 2 0.01 single pulse 10-5 10-4 10-3 10-2 10-1 10 0 10 1 t 1, Square W ave Pulse Duration [sec] 4

V 10 Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms R L R G DUT 90% V DD 10% t d(on) t r t d(off) tf t on t off Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms 5

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + ( Driver ) I SD _ L Driver R G Same Type as DUT dv/dt controlled by RG I SD controlled by pulse period Gate Pulse Width D = -------------------------- Gate Pulse Period V DD 10V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 6

Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor s online packaging area for the most recent package drawings: http:///package/packagedetails.html?id=pn_tt3pn-003 7

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