SCT36AL N-channel SiC power MOSFET V DSS R DS(on) (Typ.) I D P D 65V 6mW 39A 65W Outline TO-247N () (2) (3) Inner circuit Features ) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Packaging specifications Packing () Gate (2) Drain (3) Source * Body Diode Tube Reel size (mm) - Application Solar inverters DC/DC converters Switch mode power supplies Induction heating Motor drives Type Tape width (mm) - Basic ordering unit (pcs) 3 Taping code C Marking SCT36AL Absolute maximum ratings (T a = 25 C) Parameter Symbol Value Unit Drain - Source voltage V DSS 65 V Continuous drain current T c = 25 C * I D T c = C * I D drain current *2 I D,pulse 39 A 27 A 97 A Gate - Source voltage V GSS -4 to 22 V Junction temperature T j 75 C Range of storage temperature T stg -55 to +75 C /3 26.6 - Rev.A
SCT36AL Thermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case R thjc -.7.9 C/W Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = V, I D = ma 65 - - V Zero gate voltage drain current I DSS V DS = 65V, V GS = V T j = 25 C - T j = 5 C - 2 - ma Gate - Source leakage current I GSS+ V GS = +22V, V DS = V - - na Gate - Source leakage current I GSS- V GS = -4V, V DS = V - - - na Gate threshold voltage V GS (th) V DS = V, I D = 6.67mA 2.7-5.6 V Static drain - source on - state resistance R DS(on) V GS = 8V, I D = 3A T j = 25 C - 6 78 T j = 25 C - 79.2 - mw Gate input resistance R G f = MHz, open drain - 2 - W 2/3 26.6 - Rev.A
SCT36AL Electrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Transconductance g fs V DS = V, I D = 3A - 4.9 - S Input capacitance C iss V GS = V - 852 - Output capacitance C oss V DS = 5V - 55 - pf Reverse transfer capacitance C rss f = MHz - 24 - Effective output capacitance, energy related C o(er) V GS = V V DS = V to 3V - 26 - pf Turn - on delay time t d(on) Rise time t r Turn - off delay time t d(off) V DD = 3V, I D = 3A - 9 - V GS = 8V/V - 37 - R L = 23W - 34 - ns Fall time t f R G = W - 2 - V DD = 3V, I D =3A Turn - on switching loss E on V GS = 8V/V R G = W L=5mH *E Turn - off switching loss on includes diode E off reverse recovery - 7 - - - mj Gate Charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q g Gate - Source charge Q gs V DD = 3V - 58 - I D = 3A - 5 - nc Gate - Drain charge Q gd V GS = 8V - 23 - Gate plateau voltage V (plateau) V DD = 3V, I D = 3A - 9.6 - V * Limited only by maximum temperature allowed. *2 PW ms, Duty cycle % 3/3 26.6 - Rev.A
SCT36AL Body diode electrical characteristics (Source-Drain) (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Inverse diode continuous, forward current I S * Tc = 25 C - - 39 A Inverse diode direct current, pulsed I SM *2 - - 97 A Forward voltage V SD V GS = V, I S = 3A - 3.2 - V Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm I F = 3A, V R = 3V di/dt = A/ms - 5 - ns - 55 - nc - 8 - A 4/3 26.6 - Rev.A
SCT36AL Electrical characteristic curves Fig. Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 8 6 Operation in this area is limited by R DS(ON) Power Dissipation : P D [W] 4 2 8 6 4 2 5 5 2 P W = ms P W = ms P W = ms P W = µs Single Pulse.. Junction Temperature : T j [ C] Transient Thermal Resistance : R th [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width.. Single Pulse..... Pulse Width : P W [s] 5/3 26.6 - Rev.A
SCT36AL Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 4 3 2 2V 8V 6V 4V 2V V 2 5 5 2V 8V 6V 4V 2V V V GS = 8V V GS = 8V 2 4 6 8 2 3 4 5 Fig.6 T j = 5ºC Typical Output Characteristics(I) 4 3 2 2V 8V 6V 4V 2V T a = 5ºC V V GS = 8V Fig.7 T j = 5ºC Typical Output Characteristics(II) 2 5 5 2V 8V 6V 4V 2V V V GS = 8V 2 4 6 8 T a = 5ºC 2 3 4 5 6/3 26.6 - Rev.A
SCT36AL Electrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 4 V DS = V V DS = V. T a = 5ºC T a = 75ºC T a = -25ºC 3 2 T a = 5ºC T a = 75ºC T a = -25ºC. 2 4 6 8 2 4 6 8 2 2 4 6 8 2 4 6 8 2 Gate - Source Voltage : V GS [V] Gate - Source Voltage : V GS [V] Gate Threshold Voltage : V GS(th) [V] Fig. Gate Threshold Voltage vs. Junction Temperature 6 5 4 3 2 V DS = V I D = 6.67mA -5 5 5 2 Transconductance : g fs [S] Fig. Transconductance vs. Drain Current V DS = V T a = 5ºC T a = 75ºC T a = -25ºC.. Junction Temperature : T j [ºC] 7/3 26.6 - Rev.A
SCT36AL Electrical characteristic curves Static Drain - Source On-State Resistance : R DS(on) [W] Fig.2 Static Drain - Source On - State Resistance vs. Gate - Source Voltage.24.2.6.2.8.4 I D = 3A I D = 26A 6 8 2 4 6 8 2 22 Static Drain - Source On-State Resistance : R DS(on) [W] Fig.3 Static Drain - Source On - State Resistance vs. Junction Temperature.24.2.6.2.8.4 V GS = 8V I D = 26A I D = 3A -5 5 5 2 Gate - Source Voltage : V GS [V] Junction Temperature : T j [ºC] Fig.4 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : R DS(on) [W].. V GS = 8V T a = 5ºC T a = 25ºC T a = 75ºC T a = -25ºC 8/3 26.6 - Rev.A
SCT36AL Electrical characteristic curves Fig.5 Typical Capacitance vs. Drain - Source Voltage Fig.6 Coss Stored Energy Capacitance : C [pf] f = MHz V GS = V C rss C iss C oss. Coss Stored Energy : E OSS [mj] 5 2 3 4 Fig.7 Switching Characteristics Fig.8 Dynamic Input Characteristics 2 Switching Time : t [ns] t d(off) t f t r t d(on) V DD = 3V V GS = 8V R G = W. Gate - Source Voltage : V GS [V] 5 5 V DD = 3V I D = 3A 2 4 6 Total Gate Charge : Q g [nc] 9/3 26.6 - Rev.A
SCT36AL Electrical characteristic curves Fig.9 Typical Switching Loss vs. Drain - Source Voltage 5 Fig.2 Typical Switching Loss vs. Drain Current 6 Switching Energy : E [mj] 5 I D =3A V GS = 8V/V R G =W L=5mH E on E off Switching Energy : E [mj] 4 2 V DD =3V V GS = 8V/V R G =W L=5mH E on E off 2 3 4 5 2 4 Fig.2 Typical Switching Loss vs. External Gate Resistance 6 Switching Energy : E [mj] 4 2 V DD =3V I D =3A V GS = 8V/V L=5mH E on E off 5 5 2 25 3 External Gate Resistance : R G [W] /3 26.6 - Rev.A
SCT36AL Electrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.inverse Diode Forward Current Inverse Diode Forward Current : I S [A].. T a = 5ºC T a = 75ºC T a = -25ºC V GS = V 2 3 4 5 6 7 8 Reverse Recovery Time : t rr [ns] di / dt = A / us V R = 3V V GS = V Source - Drain Voltage : V SD [V] Inverse Diode Forward Current : I S [A] /3 26.6 - Rev.A
SCT36AL Measurement circuits Fig.- Switching Time Measurement Circuit Fig.-2 Switching Waveforms Fig.2- Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3- Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms E on = I D V DS E off = I D V DS Same type device as D.U.T. V DS I rr V surge D.U.T. I D I D Fig.4- Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. 2/3 26.6 - Rev.A
SCT36AL Dimensions TO-247N 3/3 26.6 - Rev.A
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Datasheet SCT36AL - Web Page Distribution Inventory Part Number SCT36AL Package TO-247N Unit Quantity 45 Minimum Package Quantity 3 Packing Type Tube Constitution Materials List inquiry RoHS Yes