SG6203 APPLICATIONS TYPICAL APPLICATION. Synchronous Rectifier Controller for Flyback Converter. Product Specification

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FEATURES Low operation current (1.7mA) One resistor for timing setting Internal automatic tracking for optimum dead time No reverse energy flow at light load Best suited for primary green-mode PWM IC Wide supply voltage range from 6V to 20V Built-in 18V Zener diode Optional current sensing: - Current shunt - RC network for better efficiency APPLICATIONS Flyback converters, such as: Power adaptors Open-frame SMPS DESCRIPTION The is designed to control and drive the synchronous rectifier for the flyback converter. The synchronous signal of the primary switch is obtained by a single diode connected between the transformer secondary winding and the. Using the, no additional transformer winding is required and the circuit complexity can be minimized. The power unit can be properly operated under discontinuous conduction mode (DCM) or continuous conduction mode (CCM). Problems such as shoot-through or cross conduction in CCM and energy-reverse from the secondary to the primary in DCM are prevented by the design. TYPICAL APPLICATION System General Corp. - 1 - www.sg.com.tw www.fairchildsemi.com

MARKING DIAGRAMS PIN CONFIGURATION TP XXXXXXXXYWWV T: D=DIP, S=SOP P : Z=Lead Free + ROHS Compatible XXXXXXXX: Wafer Lot Y: Year; WW: Week V: Assembly Location VCC Output GND IN+ IN- RT VZ DET ORDERING INFORMATION Part Number Pb-Free Package SZ 8-Pin SOP DZ 8-Pin DIP PIN DESCRIPTIONS Pin Name Function 1 Vcc Supply voltage of gate driver and control circuits. 2 Output 3 GND 4 VZ 5 DET Totem-pole output to drive the synchronous power MOSFET. When the voltage on DET pin falls below 1.4V from above 2.1V, the synchronous MSOFET is turned on. To prevent the reversed energy flow, this pin is disabled once the voltage on IN+ pin is lower than that of IN- pin or the internal one-shot timer is terminated. The power ground and signal ground. A 0.1µF decoupling capacitor placed between VCC and GND is recommended. Built-in 18V Zener diode. When the flyback output voltage is higher than 18V, this pin can be used to provide a stable 18V to VCC pin. If the flyback output voltage is lower than 18V, this pin can be left open and the output voltage connected directly to VCC pin. Connecting a diode from this pin to the transformer secondary winding provides on/off information of the primary switch. Low DET level indicates the secondary rectifier is conducted, therefore the synchronous MOSFET should be turned on. DET stays high when the primary switch is conducting or secondary rectifier turns off and the synchronous MOSFET should be turned off. 6 RT 7 IN- 8 IN+ Current reference. Connecting a resistor from this pin to ground can program the internal current reference I RT. Three internal current sources, which are I IN+, I IN-, and I DET, are then mirrored from I RT. I RT determines the duration of the internal one-shot signal, then the maximum on-time of the synchronous MOSFET is obtained by subtracting the on-time of the primary switch from the one-shot signal duration. If the resistor is too small, the synchronous MOSFET may be turned off even when the secondary rectifier is still conducting, which decreases the system efficiency. However, if the resistor is too large, the output is shut off immediately once DET gets high. In, an internal phase-locked-loop (PLL) modulates the duration of the internal one-shot signal to maintain a suitable dead time between the primary switch and the synchronous MOSFET. The inverting input of the current sense comparator. In discontinuous conduction mode, the secondary rectifier turns off before the next switching cycle of the primary switch. Once the secondary rectifier is off, the synchronous MOSFET must be turned off to prevent the reversed energy flow. A resistor connected between IN+ and IN- can used to develop the zero current crossing signal of the secondary rectifier. Once the voltage on IN+ is lower than IN-, the output is pulled low. The non-inverting input of the current sense comparator. In discontinuous conduction mode, the secondary rectifier turns off before the next switching cycle of the primary switch. Once the secondary rectifier is off, the synchronous MOSFET must be turned off to prevent the reversed energy flow. A resistor connected between IN+ and IN- can used to develop the zero current crossing signal of the secondary rectifier. Once the voltage on IN+ is lower than IN-, the output is pulled low. System General Corp. - 2 - www.sg.com.tw www.fairchildsemi.com

BLOCK DIAGRAM System General Corp. - 3 - www.sg.com.tw www.fairchildsemi.com

ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CC DC Supply Voltage* 25 V I OUT Gate Output Current 500 ma V H DET, OUT, VZ -0.3 to 25.0 V V L RT, IN+, IN- -0.3 to 7.0 V P D Rθ JA Power Dissipation Thermal Resistance (Junction-to-Air) SOP8 400 DIP8 800 SOP8 208.4 DIP8 82.5 T J Operating Junction Temperature 150 C T STG Storage Temperature Range -65 to +150 C T L Lead Temperature (Soldering, 10 Seconds) 300 C mw C/W ESD Electrostatic Discharge Capability, Human Body Model 2.0 KV Electrostatic Discharge Capability, Machine Model 200 V * All voltage values, except differential voltages, are given with respect to GND pin. * Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit V CC DC Supply Voltage <20 V T A Operating Ambient Temperature -30~85 C R T Pulse Width of the One-shot Signal 12~36 KΩ ELECTRICAL CHARACTERISTICS V CC =12V; R T= 24KΩ ; T A= 25 C, unless otherwise noted. Timing Control Section Symbol Parameter Test Condition Min. Typ. Max. Unit V RT Voltage on RT Pin 1.14 1.20 1.26 V R T=12KΩ 6.5 7.5 8.5 µs T RT Pulse Width of the One-shot Signal R T=24KΩ 13 15 17 µs R T=36KΩ 19.5 22.5 25.5 µs T RT Adjustable Range of the Pulse Width Compared to T RT R T=12KΩ ; R T=24KΩ ; R T=36KΩ +40 +60 +80 % T DEAD Timing Margin Between Output Turn-off (Output Falling) and Next Switching Cycle Start (DET Rising) 200 1000 ns System General Corp. - 4 - www.sg.com.tw www.fairchildsemi.com

Synchronous Detection Section Symbol Parameter Test Condition Min. Typ. Max. Unit V TH Threshold Voltage to Enable One-shot Signal 1.9 2.1 2.3 V V TL Threshold Voltage to Enable Output IN+ - IN- > 5mV 1.2 1.4 1.6 V I DET Current Output from DET Pin R T=24KΩ 250 300 µa T D_ LOW Debounce Time from DET Low to Enable Output 150 300 ns Current Detection Section Symbol Parameter Test Condition Min. Typ. Max. Unit V OFFSET Offset Voltage 10 mv I IN+ Current Output from IN+ R T=24KΩ 90 100 110 µa I IN- Current Output from IN- R T=24KΩ 90 100 110 µa I IN+ - I IN- Differential Current of IN+ and IN- 12KΩ < R T < 36KΩ 1.5 µa T P Propagation Delay (OUTPUT from Low to High) DET< V TL, IN+ - IN- > 5mV 200 ns PSRR Power Supply Rejection Ratio 65 db CMRR Common Mode Rejection Ratio 65 db CMRR-f Common Mode Rejection Ratio at 70KHz 32 db Zener Section Symbol Parameter Test Condition Min. Typ. Max. Unit V Z Zener Voltage I VZ=0.1 ~ 3mA 18 19 20 V Output Section Symbol Parameter Test Condition Min. Typ. Max. Unit V OH V OL Output Voltage High Output Voltage Low V CC=12V, I SOURCE=50mA 11.2 V V CC=6V, I SOURCE=30mA 3.5 V V CC=12V, I SINK=50mA 1 V V CC=6V, I SINK=30mA 1.2 V Tr Rising Time T A=25 C; C L=5nF, V CC=12V 150 175 ns Tf Falling Time T A=25 C; C L=5nF, V CC=12V 150 175 ns V CC Section Symbol Parameter Test Condition Min. Typ. Max. Unit V OP Continuously Operating Voltage 20 V I CC_OP Operating Current V DD=12V, Output=open, DET=50KHz, IN-=IN+=open, R T=12KΩ 1.7 4.0 ma V TH(ON) Start Threshold 6.0 6.3 V V TH(OFF) Minimum Operating Voltage 4.8 5.1 V System General Corp. - 5 - www.sg.com.tw www.fairchildsemi.com

TYPICAL CHARACTERISTICS Start Threshold (VTH(ON)) vs Temperature Pulse width of the one-shot signal (TRT) vs Temperature VTH(ON) (V) 6.5 6.4 6.3 6.2 6.1 6.0 5.9 5.8 5.7 5.6 5.5 TRT(uS) 16.0 15.9 15.8 15.7 15.6 15.5 15.4 15.3 15.2 15.1 VTH(OFF) (V) Minimum Operating Voltage (VTH(OFF)) vs Temperature 5.85 5.80 5.75 5.70 5.65 5.60 5.55 5.50 5.45 5.40 5.35 TD_LOW(nS) 350.0 300.0 250.0 200.0 150.0 100.0 50.0 0.0 Debounce time form DET low to enable the output (T D_LOW ) vs Temperature ICC_OP(mA) Operating Current (ICC_OP) vs Temperature 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 VTH(V) 1.842 1.840 1.838 1.836 1.834 1.832 1.830 1.828 Threshold voltage to enable an one shot signal (V TH ) vs Temperature System General Corp. - 6 - www.sg.com.tw www.fairchildsemi.com

Threshold voltage to enable the output (V TL ) vs Temperature 1.56 1.54 1.52 VTL(V) 1.50 1.48 1.46 1.44 1.42 System General Corp. - 7 - www.sg.com.tw www.fairchildsemi.com

OPERATION DESCRIPTION Synchronization The DET pin provides on/off information of the primary switch. As shown in the following reference circuits, one diode connected between the DET pin and the secondary winding of the transformer is used to get this information. Low DET voltage level indicates the secondary rectifier is conducted; therefore, the synchronous MOSFET should be turned on. The voltage on DET pin stays high when the primary switch is conducting and the synchronous MOSFET should be turned off. This innovative feature requires no auxiliary winding and the circuit complexity is greatly reduced. Anticipation and Phase Lock Loop A resistor from the RT pin to ground is used to determine the internal current source reference. When the primary switch is turned on with DET high, an internal one-shot timer outputs high for a duration proportional to the R T resistor. The duration of this one-shot signal can be expressed as: TRT 15 RT ( KΩ) = (µs) (1) 24 shut off immediately once DET gets high. In, an internal phase locked loop modulates the duration of the internal one-shot signal to maintain a suitable dead time between the primary switch and the synchronous MOSFET. The duration of the one-shot signal can be extended 80% compared with the original value decided by R T resistor. Current Sense In discontinuous conduction mode, the secondary rectifier turns off before the next switching cycle of the primary switch. Once the secondary rectifier is off, the synchronous MOSFET must be turned off to prevent the reverse energy flow. Therefore, a zero current crossing detector is needed when the converter is operated under DCM. The provides two configurations to achieve this: output capacitor ESR method (reference Circuit-A) and current-sensing resistor method (reference Circuit-B). When the secondary rectifier is turned off, the voltage on IN+ is lower than that of IN-. Once this happens, the driving signal for the synchronous MOSFET is turned off. Primary Switch PWM One-Shot Signal Output T Under-Voltage Lockout (UVLO) The has an internal UVLO circuit with hysteresis. The IC is turned on if V CC is higher than 6V. Once turned on, is turned off if V CC is lower than 5.1V. When the flyback output voltage is higher than 18V, the VZ pin can be used to provide a stable 18V to VCC pin. The on-time of the synchronous MOSFET is obtained by subtracting the on-time of the primary switch from the one-shot signal duration. If the resistor is too small, the synchronous MOSFET may be turned off when the secondary rectifier is still conducting, which decreases system efficiency. If the resistor is too large, the output is System General Corp. - 8 - www.sg.com.tw www.fairchildsemi.com

REFERENCE CIRCUIT-A BOM Ref Des Part Number Description C2 0.1µF C5 22pF D1 FR102 100V/1A D2 SB1100 100V/1A D3 1N4148 100V/0.2A Q1 PSMN015-110P 110V/75A; 15mΩ R1 2.2KΩ R2 22Ω R3 47KΩ R4 1.8KΩ R5 2KΩ R6 0 R7 16.2KΩ System General Corp. - 9 - www.sg.com.tw www.fairchildsemi.com

REFERENCE CIRCUIT-B System General Corp. - 10 - www.sg.com.tw www.fairchildsemi.com

PACKAGE INFORMATION 8 PINS-SOP(S) 8 5 C E H F 1 4 b e D A1 A Θ L Dimensions Symbol Millimeter Inch Min. Typ. Max. Min. Typ. Max. A 1.346 1.752 0.053 0.069 A1 0.101 0.254 0.004 0.010 b 0.406 0.016 c 0.203 0.008 D 4.648 4.978 0.183 0.196 E 3.810 3.987 0.150 0.157 e 1.016 1.270 1.524 0.040 0.050 0.060 F 0.381X45 0.015X45 H 5.791 6.197 0.228 0.244 L 0.406 1.270 0.016 0.050 θ 0 8 0 8 System General Corp. - 11 - www.sg.com.tw www.fairchildsemi.com

8PINS DIP(D) D 8 5 Θ X E1 E eb 1 4 A1 A2 A L b1 b e Dimension Symbol Millimeter Inch Min. Typ. Max. Min. Typ. Max. A 5.334 0.210 A1 0.381 0.015 A2 3.175 3.302 3.429 0.125 0.130 0.135 b 1.524 0.060 b1 0.457 0.018 D 9.017 9.271 10.160 0.355 0.365 0.400 E 7.620 0.300 E1 6.223 6.350 6.477 0.245 0.250 0.255 e 2.540 0.100 L 2.921 3.302 3.810 0.115 0.130 0.150 e B 8.509 9.017 9.525 0.335 0.355 0.375 θ 0 7 15 0 7 15 System General Corp. - 12 - www.sg.com.tw www.fairchildsemi.com

System General Corp. - 13 - www.sg.com.tw www.fairchildsemi.com