General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and amplification. PNP complement: LBC87 Series. 3 We declare that the material of product compliance with RoHS requirements. 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT 23 LBC87-6LTG 5A 3/Tape&Reel LBC87-6LT3G 5A /Tape&Reel LBC87-25LTG 5B 3/Tape&Reel 3 COLLECTOR LBC87-25LT3G 5B /Tape&Reel BASE LBC87-4LTG 5C 3/Tape&Reel LBC87-4LT3G 5C /Tape&Reel 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 V Collector Base Voltage V CBO 5 V Emitter Base Voltage V EBO 5. V Collector Continuous I C 5 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board, () T A = 225 mw Derate above.8 mw/ C Thermal Resistance, Junction to Ambient R θja 556 C/W Total Device Dissipation Alumina Substrate, (2) T A = 3 mw Derate above 2.4 mw/ C Thermal Resistance, Junction to Ambient R θja 47 C/W Junction and Storage Temperature T J, T stg 55 to +5 C. FR 5 =. x.75 x.62 in. 2. Alumina =.4 x.3 x.24 in. 99.5% alumina. P D P D Rev.O /
LBC87-6LTG,LBC87-25LTG,LBC87-4LTG ELECTRICAL CHARACTERISTICS (TA = unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I C = ma) V(BR)CEO 45 V Collector Emitter Breakdown Voltage (V EB =, IC = µa) V(BR)CES 5 V Emitter Base Breakdown Voltage (I E =. µa) V(BR)EBO 5. V Collector Cutoff I CBO (V CB = 2 V) na (V CB = 2 V, TJ = 5 C) 5. µa ELECTRICAL CHARACTERISTICS (TA = unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Gain h FE (I C = ma, V CE =. V) LBC87 6 25 LBC87 25 6 4 LBC87 4 25 6 (I C = 5 ma, V CE =. V) 4 Collector Emitter Saturation Voltage (I C = 5 ma, I B = 5 ma) V CE(sat).7 V Base Emitter On Voltage (I C = 5 ma, V CE=. V) V BE(on).2 V SMALL SIGNAL CHARACTERISTICS Gain Bandwidth Product (I C = ma, V CE = 5. V dc, f = MHz) f T MHz Output Capacitance C obo pf (V CB = V, f =. MHz) Rev.O 2/
LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 6LTG h FE, DC CURRENT GAIN 5 4 3 2 5 C V CE = V V CE(sat), COLLECTOR EMITTER. I C /I B = 5 C....... Figure. DC Gain vs. Collector Figure 2. Collector Emitter Saturation Voltage vs. Collector V BE(sat), BASE EMITTER...9.8.7.6.5.4.3.2. I C /I B =.. 5 C. V BE(on), BASE EMITTER VOLTAGE (V).2. V CE = 5 V..9.8.7.6.5.4.3.2... 5 C. Figure 3. Base Emitter Saturation Voltage vs. Collector Figure 4. Base Emitter Voltage vs. Collector Rev.O 3/
LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 6LTG VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -. -.8 -.6 -.4 -.2 I C = - ma I C = -3 ma T J = I C = -5 ma I C = - ma -. -. -. - - I B, BASE CURRENT (ma) Figure 5. Saturation Region V, TEMPERATURE COEFFICIENTS (mv/ C) θ +. -. -2. VB for V BE VC for V CE(sat) -. - - - I C, COLLECTOR CURRENT Figure 6. Temperature Coefficients C, CAPACITANCE (pf) C ib C ob. -. -. - - V R, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances Rev.O 4/
LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 25LTG h FE, DC CURRENT GAIN 5 4 3 2 5 C V CE = V V CE(sat), COLLECTOR EMITTER. I C /I B = 5 C....... Figure 8. DC Gain vs. Collector Figure 9. Collector Emitter Saturation Voltage vs. Collector V BE(sat), BASE EMITTER...9.8.7.6.5.4.3.2. I C /I B =.. 5 C. V BE(on), BASE EMITTER VOLTAGE (V).2. V CE = 5 V..9.8.7.6.5.4.3.2... 5 C. Figure. Base Emitter Saturation Voltage vs. Collector Figure. Base Emitter Voltage vs. Collector f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz). V CE = V T A = Figure 2. Gain Bandwidth Product vs. Collector Rev.O 5/
LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 25LTG VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -. -.8 -.6 -.4 -.2 I C = - ma I C = -3 ma T J = I C = -5 ma I C = - ma -. -. -. - - I B, BASE CURRENT (ma) Figure 3. Saturation Region V, TEMPERATURE COEFFICIENTS (mv/ C) θ +. -. -2. VB for V BE VC for V CE(sat) -. - - - I C, COLLECTOR CURRENT Figure 4. Temperature Coefficients C, CAPACITANCE (pf) C ib C ob. -. -. - - V R, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances Rev.O 6/
LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 4LTG h FE, DC CURRENT GAIN 9 8 7 6 5 4 3 2 5 C... V CE = V Figure 6. DC Gain vs. Collector V CE(sat), COLLECTOR EMITTER... I C /I B =.. 5 C Figure 7. Collector Emitter Saturation Voltage vs. Collector V BE(sat), BASE EMITTER...9.8.7.6.5.4.3.2. I C /I B =.. 5 C. V BE(on), BASE EMITTER VOLTAGE (V).2. V CE = 5 V..9.8.7.6.5.4.3.2... 5 C. Figure 8. Base Emitter Saturation Voltage vs. Collector Figure 9. Base Emitter Voltage vs. Collector f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz). V CE = V T A = Figure 2. Gain Bandwidth Product vs. Collector Rev.O 7/
LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 4LTG VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -. -.8 -.6 -.4 -.2 I C = - ma I C = -3 ma T J = I C = -5 ma I C = - ma -. -. -. - - I B, BASE CURRENT (ma) Figure 2. Saturation Region V, TEMPERATURE COEFFICIENTS (mv/ C) θ +. -. -2. VB for V BE VC for V CE(sat) -. - - - I C, COLLECTOR CURRENT Figure 22. Temperature Coefficients C, CAPACITANCE (pf) C ib C ob. -. -. - - V R, REVERSE VOLTAGE (VOLTS) Figure 23. Capacitances Rev.O 8/
LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 6LTG, LBC87 25LTG, LBC87 4LTG.. S ms ms Thermal Limit ms.. V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 24. Safe Operating Area Rev.O 9/
LBC87-6LTG,LBC87-25LTG,LBC87-4LTG SOT-23 V D A L 3 2 G H B C S K J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A.2.97 2.8 3.4 B.472.55.2.4 C.35.44.89. D.5.2.37.5 G.7.87.78 2.4 H.5.4.3. J.34.7.85.77 K.4.285.35.69 L.35.4.89.2 S.83.39 2. 2.64 V.77.236.45.6.37.95.37.95.79 2..35.9.3.8 inches mm Rev.O /