72x. MGA PHEMT* Low Noise Amplifier with Bypass Switch. Data Sheet. Description

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MGA-75 PHEMT* Low Noise Amplifier with Bypass Switch Data Sheet Description Avago s MGA-75 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA),which is designed for an adaptive CDMA receiver LNA and adaptive CDMA transmit driver amplifier. The MGA-75 features a minimum noise figure of. db and db associated gain from a single stage, feedback FET amplifier. The output is internally matched to 5Ω. The input is optimally internally matched for lowest noise figure into 5Ω. The input may be additionally externally matched for low VSWR through the addition of a single series inductor. When set into the bypass mode,both input and output are internally matched to 5Ω. The MGA-75 offers an integrated solution of LNA with adjustable IIP. The IIP can be fixed to a desired current level for the receiver s linearity requirements. The LNA has a bypass switch function,which sets the current to zero and provides low insertion loss. The bypass mode also boosts dynamic range when high level signal is being received. For the CDMA driver amplifier applications, the MGA- 75 provides suitable gain and linearity to meet the ACPR requirements when the handset transmits the highest power. When transmitting lower power, the MGA- 75 can be bypassed, saving the drawing current. The MGA-75 is a GaAs MMIC, processed on Avago s cost effective PHEMT (Pseudomorphic High Electron Mobility Transistor). It is housed in the SOT (SC7 -lead) package, and is part of the Avago Technologies CDMAdvantage chipset. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class ) Refer to Avago Application Note AR: Electrostatic Discharge Damage and Control. Features Lead-free Option Available Operating Frequency:. GHz ~. GHz Noise Figure:. db at GHz Gain: db at GHz Bypass Switch on Chip Loss = -.5 db (Id <5 μa) IIP = +5 dbm Adjustable Input IP: + to + dbm.7 V to. V Operation Very Small Surface Mount Package Applications CDMA (IS-5, J-STD-8) Receiver LNA Transmit Driver Amp TDMA (IS-)Handsets Surface Mount Package SOT- (SC-7) Pin Connections and Package Marking INPUT & V ref GND 7x GND OUTPUT & V d Package marking is characters. The last character represents date code. *Pseudomorphic High Electron Mobility Transistor

MGA-75 Absolute Maximum Ratings [] Symbol Parameter Units Absolute Operation Maximum Maximum V d Maximum Input to Output Voltage V 5.5. V ref Maximum Input to Ground DC Voltage V +. +. -5.5 -. I d Supply Current ma 7 P d Power Dissipation [,] mw 5 P in CW Input Power dbm + + T j Junction Temperature C 7 5 T STG Storage Temperature C -5 to +5 - to +85 Thermal Resistance: [] jc = C/W Notes:. Operation of this device in excess of any of these limits may cause permanent damage.. Tcase = 5 C. Simplified Schematic Functional Block Diagram IN OUT Input & V ref Control GainFET Output & V d SW & Bias Control GND GND

MGA-75 Electrical Specifications T c = +5 C, Z o = 5Ω, I d = ma, V d = V, unless noted. Symbol Parameters and Test Conditions Units Min. Typ. Max. Vc [,] f =. GHz V d =.V (V ds =.5V) I d = ma V.7.5.5.5 NF test [] f =. GHz V d =.V (= V ds + Vc) I d = ma db.5.8. G a test [] f =. GHz V d =.V (= V ds + Vc) I d = ma db.5. 5.5. IIP test [] f =. GHz V d =.V (= V ds + Vc) I d = ma db 8.5.5.7 IL test [] f =. GHz V d =.V (V ds = V, V c = V) I d =. ma db.5.5. Ig test [] f =. GHz V d =.V (V ds = V, V c = V) I d =. ma μa.. NF [] o Minimum Noise Figure f =. GHz db.5 As measured in Figure Test Circuit f =.5 GHz.8 ( opt computed from s-parameter and f =. GHz.. noise parameter performance as f =.5 GHz.5 measured in a 5Ω impedance fixture) f =. GHz.5 f =. GHz.7 G [] a Associated Gain at Nfo f =. GHz db.8 As measured in Figure Test Circuit f =.5 GHz. ( opt computed from s-parameter and f =. GHz.. noise parameter performance as f =.5 GHz. measured in a 5Ω impedance fixture) f =. GHz. f =. GHz. P [] db Output Power at db Gain Compression I d = ma dbm +5. As measured in Figure Test Circuit. I d = 5 ma +. Frequency =. GHz I d = ma +8. I d = ma +..5 I d = ma +. I d = ma +7. IIP [] Input Third Order Intercept Point I d = ma dbm +5 As measured in Figure Test Circuit I d = 5 ma +.5 Frequency =. GHz I d = ma +. I d = ma +.5.7 I d = ma +. I d = ma +.8 ACP Adjacent Channel Power Rejection, f = GHZ, offset =.5 MHz, Pout = dbm I d = ma dbc -55 (CDMA modulation scheme) I d = ma - f = 8 MHz, offset = KHz, Pout = 8 dbm I d = ma -57 As measured in Figure Test Circuit I d = ma - RL [] in Input Return Loss as measured in Fig. f =. GHz db.. RL [] out Output Return Loss as measured in Fig. f =. GHz db.5. ISOL [] Isolation S as measured in Fig. f =. GHz db -.. Notes:. Standard Deviation and Typical Data as measured in the test circuit in Figure. Data based at least 5 part sample size and wafer lots.. Typical data computed from s-parameter and noise parameter data measured in a 5É system. Data based on parts from wafer lots.. Vc = -Vref test pf Input 5 pf V d Input Bias Tee ICM Fixture V d V ref 5 pf.7 nh 7x 8 nh Output V ref 7x Bias Tee Output W 5 p F Figure. MGA-75 Production Test Circuit. Figure. MGA-75 Test Circuit for S, Noise, and Power Parameters Over Frequency.

MGA-75 Typical Performance, T c = 5 C, Z o = 5, V d = V, I d = ma unless stated otherwise. All data as measured in Figure test circuit (Input & Output presented to 5Ω). NF (db)..8... 5 Figure. Minimum Noise Figure vs. Frequency and Voltage..7 V. V. V G a (db) 8 5-5 Figure. Associated Gain with F min vs. Frequency and Voltage..7 V. V. V INPUT IP (dbm) 8 5-5 Figure 5. Input Third Order Intercept Point vs. Frequency and Voltage..7 V. V. V NF (db)..8... - C + C +85 C 5 Figure. Minimum Noise Figure vs. Frequency and Temperature. G a (db) 8 5-5 Figure 7. Associated Gain with F min vs. Frequency and Temperature. - C + C +85 C INPUT IP (dbm) 8 5-5 - C +5 C +85 C Figure 8. Input Third Order Intercept Point vs. Frequency and Temperature. 5 In (LNA) Out (LNA) 5 In (Swt) Out (Swt) (LNA) VSWR 5 VSWR (Bypass Switch) 5 (db) INSERTION LOSS - - - - 5 - C +5 C +85 C Figure. LNA on (Switch off) VSWR vs. Frequency. Figure. LNA off (Switch on) VSWR vs. Frequency. Figure. Insertion Loss (Switch on) vs. Frequency and Temperature.

MGA-75 Typical Performance, continued, T c = 5 C, Z o = 5, V d = V, I d = ma, Frequency = GHz, unless stated otherwise. All data as measured in Figure test circuit (Input & Output presented to 5Ω). (dbm) db COMPRESSION 8 5-5.7 V. V. V Figure. Output Power at db Compression vs. Frequency and Voltage. (dbm) db COMPRESSION 8 5-5 - C +5 C +85 C Figure. Output Power at db Compression vs. Frequency and Temperature. INPUT IP (dbm) 8 5-5 Figure. Input Third Order Intercept Point vs. Frequency and Current. ma ma ma NF (db).....8... - C +5 C +85 C. 8 I d CURRENT (ma) Figure 5. Minimum Noise Figure vs. Current and Temperature. G a (dbm) 8 5 - C +5 C +85 C - 8 I d CURRENT (ma) Figure. Associated Gain (Fmin) vs. Current and Temperature. INPUT IP (dbm) 8 5 - C +5 C +85 C 8 I d CURRENT (ma) Figure 7. Input Third Order Intercept Point vs. Current and Temperature. db Compression (dbm) 8 5 - C +5 C +85 C - 8 I d CURRENT (ma) Figure 8. Output Power at db Compression vs. Current and Temperature. VSWR 5 I d CURRENT (ma) Figure. Input and Output VSWR and VSWR of opt vs. Current. Gamma Input Output 8 Vref (V).8... - C +5 C +85 C 8 I d CURRENT (ma) Figure. V ref vs. Current and Temperature. 5

MGA-75 Typical Scattering Parameters and Noise Parameters T C = 5 C, V d =.V, I d = ma, Z O = 5Ω, V ref = -.V (from S and Noise Parameters in Figure test circuit) Freq. S S S S S RL in RL out G max Isolation (GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (db) (db) (db) (db) (db)..7 -. 7. 7. - -.5 -. -. -. -.5.. -5...8 - -. -.8 -. -8. -...8 -...77 - -.8 -.5 -. -5. -.8..77 -.5.5.8-8 -5. -. -. -.7-5..5.7-5... -5 -. -. -. -.8 -...5-5...5 - -.8 -.8-5. -. -.8.7.5 -.7.8. - -. -. -. -. -..8.5 -.7.7.5-7 -. -5. -. -. -...5-7.7.7. -7 -. -. -7. -. -...7-7.7 8.7 8. -7 -.7 -. -8. -.8 -.7.. -7.7.7. -75 -. -7. -8.8 -.8 -... -7.75.75. -77 -.5-7.7 -. -.8 -.5.. -78.7 -.7 -. -8 -. -8. -.8 -.8 -...7-8.7-5.7 -. -8 -. -8. -. -.8 -..5.5-8.77-7.77-7. -8 -. -. -. -.8 -... -8.77 -.77 -.8-85 -. -. -. -.8 -..7. -8.77 -.77 -.7-8 -. -.8 -.5 -.8 -..8. -87.77-5.77 -. -88 -. -. -.8 -.8 -... -8.78-7.78-7.5-8 -. -. -. -.8 -...8 -.78 -.78 -. - -. -. -. -.8 -...7 -.78 -.78 -. - -. -. -. -.8 -... -.78 -.78 -. - -. -.5 -. -.8 -... -.78-5.78-5. - -. -.8 -.7 -.8 -...5-5.78-7.78-7. - -. -. -. -. -..5. -.78 -.7 -. -7 -. -. -. -. -... -8.7 -.7 -.8-8 -. -.7 -.8 -. -..7. -.7 -.7 -.7 - -. -. -5. -. -..8. -.7-5.7-5.7 - -. -. -5.5 -. -... -.7-7.7-7. - -. -. -5. -. -... -.7 -.7 -.5 - -. -.7 -. -. -... -.7 -.7 -.5 - -. -. -.7 -. -... -.7 -.7 -. -8 -. -. -7. -. -... -.7-5.7-5. - -. -. -7.5 -. -... -5.7-7.7-7. - -. -.5-7. -. -..5. -.7 -.7 -. - -. -.7-8. -. -...8-7.7-5.7-5. -5 -. -.8-8. -. -..7.8-8.7-5.7-5. -7 -. -. -8. -. -..8.8 -.7-5.7-5. - -. -5. -. -. -...8 -.7-5.7-5. - -. -5. -. -. -...7 -.7-58.7-58. - -. -5. -. -. -..5.7 -.7-7.7-7. -8 -. -5. -. -. -. 5..8 -.78-77.78-77. -5 -. -5. -.7 -. -. 5.5. -.78-8.77-8. - -. -. -8.7 -. -... -7.77-5.77-5. -78 -. -5.8-8. -. -..5. 75.7-5.7-5. 7 -. -.8-7.8 -. -. 7.. 7.75-5.75-5. -.5 -.8-7.7 -. -.5 7.5..7-5.7-5. 5 -. -. -7.5 -. -. 8..5 5.7-5.7-5. 7 -.8 -. -7. -.5 -.8 8.5..7 -.7 -. -. -.8 -. -. -...7 5.7-57.7-57. -. -. -. -.8 -.

MGA-75 Typical Scattering Parameters and Noise Parameters T C = 5 C, V d =.V, I d = 5 ma, Z O = 5Ω, V ref =.7V (from S and Noise Parameters in Figure test circuit) Freq. S S S S S RL in RL out G max Isolation (GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (db) (db) (db) (db) (db)..8 -. 7.5. -8..7.5. -..5.78 -.8.5.58-5.7..8. -5..8.7 -.7 5. 5.5 -.. 5.. -.8..75-8.5 8..5 -..5 5.. -...7 -. 5. 7.5-8.. 5.. -...7-5.57. 8.5 -..7 5.. -...7-8.5. 8.5 -..8 5.. -...7-5.8.7 8.55-5.8. 5..8 -.7..7-5.5.7.55-7.7. 5.. -..5.7-58..7.55 -.. 5..5 -... -. 7.7.5 -.5. 5.. -..7. -..7 8.5 -.. 5.. -.7.8.8-7..7 8.5-5.. 5.. -.5..7-7.5.8 8.5-7..5 5.5. -... -7..8 7.5 -.. 5.5.8 -... -7.8.8 7.5-5..7 5..7 -...5-7.5.8.5-5..8 5..5 -.7.. -8. 8.8.5-55.. 5.7. -.5.. -85.8 5. 5.5-57.8. 5.8. -..5. -88.. 5.5-5.7. 5.. -...5 -...8 -..5..7 -..5.5-8.8 77. 7. -8 8. 5. 7.. -.7..5-8.5.. - 8. 5.5 7.. -..5.5-5.55 5. -.8-8. 5.8 8.. -8.7 5..5 -.. -. -7 7.7. 8. 8.8-8. 5.5. 7. 8. -. - 7... 8. -8....8 8. -7. -.8..8 7.8-7.8.5.5 8.7 7. -. -5... 7.5-7.5 7...7 -. -8. -5 5...7 7. -7. 7.5.7.8-5. -.8-7 5.5.5.. -7. 8..7.8 -.5-7. 7 5..5.8. -. Freq. NF min opt R n /Z o G a opt RL R n P db OIP IIP (GHz) (db) Mag Ang (db) (db) (Ω) (dbm) (dbm) (dbm).8.58.5..5. 7.......5.. 5.7.8...... 7..8.7...8..5.57. 7..7.7.....8.7. 55...7.78...5... 58..5..5..8.5..8..8.....7.5....8.....7.5..7..7.....8.5..7.7.7.....8.7..7.8 7.......8.5.7.7 7..5..8.5....78.5 87..5.5.8....5.8..........8..8 8.7......5.87.. 8.. 8....5 5..87..5 7.87. 7.8...8 5.5.. -7. 7.5. 7...5.8... -5.5 7..7 7.7.. 7.5 7

MGA-75 Typical Scattering Parameters and Noise Parameters T C = 5 C, V d =.V, I d = ma, Z O = 5Ω, V ref =.V (from S and Noise Parameters in Figure test circuit) Freq. S S S S S RL in RL out G max Isolation (GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (db) (db) (db) (db) (db)..7-5. 7.5. -.5.. 7. -..5.7-5..5.7-7....5 -..8.7-7.8 5.5 5.5 -.7... -5.7..7 -.77.5.5-7... 5.8-5.5..7 -.7.5 7.5 -.5.. 5. -5... -7.. 7.5 -... 5. -5...8-5.58 7. 8.5 -.. 7. 5. -.8..7-5.5. 8.5 -.. 7. 5. -... -58.5.. -8.. 7.. -..5. -. 8.. -.8.7 7..7 -...5-5. 5.. -.7.8 7..5 -..7. -8.7.7. -.. 7.. -.7.8. -7..7 8. -.5. 7.. -.5.. -7.5.7 8. -8.. 7.. -... -77..7 8. -5.. 7.5.8 -... -8..7 8. -5.. 7.5.7 -...5-8. 8.7 7. -5..5 7..5 -.7..5-87. 5.7 7. -55.. 7.7. -.5..58 -.8.8. -57.8.7 7.8. -..5.57 -.8.8. -5.7.8 7.. -...5-8. 87.8.7 -. 5. 8.. -.5.5.5 -. 75.. -7.7...8 -.8..8 -... -.... -..5. -58.5 5.. -.7.8.8. -.8 5..5-75.88 8. -.7-5...5. -. 5.5.5 7.7 7. -. -8 8.7 7..8. -...5 5.57 7. -. - 8.... -8..5... -. -5 7.7.7.5 8.7-8. 7..5. -5. -. -5 7... 8. -7. 7.5.. -. -. -7. 7..5 7.8-7. 8.. 5..5-8.. 7.. 7.5 -.7 Freq. NF min opt R n /Z o G a opt RL R n P db OIP IIP (GHz) (db) Mag Ang (db) (db) (Ω) (dbm) (dbm) (dbm).8.58.5..5. 7.....8..5 7..5..5. 7..... 7..7 7.7.8. 7.8....8.. 8... 7.7..5..7 5.... 8.8 7.5 5..8..5 5..7.5.5 8.5 7. 5...5.5..58.. 8. 7. 5...7...5.58.85 8. 7. 5...7..... 8. 7.5.5... 8...8.55 8. 7..8..5. 7..8.7. 8. 7.7 5...5. 7..8.. 8. 7.8 5..5.5. 78..8.. 8.5 7. 5...55....8. 8.7 8...5.5.8.7.8.7 8. 8.8 8..8..58.7.5. 5. 7... 7..5..7 5..8 5.... 8.7 5... 77...5.5..8. 5.5.8. -7. 8.8..58.....7.5 -.5 8.5. 7..8.8. 8

MGA-75 Typical Scattering Parameters and Noise Parameters T C = 5 C, V d =.V, I d = ma, Z O = 5Ω, V ref =.5V (from S and Noise Parameters in Figure test circuit) Freq. S S S S S RL in RL out G max Isolation (GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (db) (db) (db) (db) (db)..7 -.5 7. 8. -.. 8.. -7.5.5.7-7. 5.5.8-7 5.. 8. 8. -..8. -8 5.7 8.5 5.7-5 5.. 8.7 7. -.5..7-5.5 5.5.7-7 5.. 8.7 7. -... - 5.57.5 7.7 -.. 8.7 7. -...5-5 5.8 8.5 8.7 -.8.7 8.7.8-5... -5 5. 5.5 8.7 -..8 8.7. -5... -57 5..5. -.5. 8.8. -5... - 5..5. -8.. 8.. -5..5. - 5.5.. -.. 8.. -5... -7 5... -... 5.8 -.8.7. -7.8..5 -..5. 5. -..8.5-7. 7..5 -.8.. 5. -...58-77.8..5-7.7.7. 5. -...57-8.75.. -.5.. 5. -...5-8.8.. -5. 5...8 -.8..55-87..7. -5. 5...7 -...55 -.5.7. -5. 5..5.5 -...5 -.8.7 8. -5. 5... -..5.5-7. 8.7 8. -57. 5.5.7. -... -. 85.8. -...5. -..5. -8.85 7.8.7-75.7.7..7 -... -5...5-8. 7... -..5. -... -8. 7... -. 5.. -7.8 7.. -. 7.7.8.8 -. 5.5... -. -.5 7.7.. -.5.. 5.8. -5. -8. 7...8 -..5..7. -.8-5 8.5 7..8. -8.5 7.. 7.5-5. -.7-8. 7. 5. 8. -8. 7.5.. -5. -8. -7 7.7 7.8 5. 8. -7.5 8... -. -.5 7 7. 7.7. 8. -. Freq. NF min opt R n /Z o G a opt RL R n P db OIP IIP (GHz) (db) Mag Ang (db) (db) (Ω) (dbm) (dbm) (dbm).8..7.5 5.7 8...8. 8.8...5.5 5.5..7.7.....5. 5..8..7...5.5.7 5..5.7.5...7.8.8. 58....5.5....7...85..8...... 5..7.7.7...... 7..57.85.8...... 7...85.7.7..... 7.....7..5... 78.8.7.7..8...5.. 8.8.. 8.5.8..7..5.8 5.7. 5. 8.5..7..5.7. 7.5.8 5.77 7.5...8..7.....8..5..5.5...7 5..7... 5..5.8-75...85...8 5. 5.5.. -..7.8..5. 5.5..7.7 -...7 7.. 5. 5.7

MGA-75 Typical Scattering Parameters and Noise Parameters T C = 5 C, V d =.V, I d = ma, Z O = 5Ω, V ref =.V (from S and Noise Parameters in Figure test circuit) Freq. S S S S S RL in RL out G max Isolation (GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (db) (db) (db) (db) (db)..75 -.8 7. 7. -.7.5 8..7-8..5.7-8.5 5.. -7... 8.7-7..8.8 -.5 8.. - 5.8.. 8. -7...7 -.5. 5. - 5..5. 7.8-7...5-7 5..5. -8 5.5.7. 7. -... -5 5.87 8.5 7. - 5..8. 7. -.7.. -55 5.77.5 8. - 5...7 7. -.5.. -58 5.8.5. - 5...7 7. -... - 5.58 8.5. -...8.8 -..5. -5 5. 5.5. -8.8..8.5-5... - 5..5. -..5.. -5..7.5-7 5..5. -.5... -5..8.58-75 5..5. -..8. 5. -5...57-7 5... -... 5.7-5...5-8 5.5.. -. 5.. 5.5 -...55-85. 8.. -7. 5.. 5. -.7..5-8.8 5.. -.8 5.. 5. -.5..5 -.8.. -5. 5.5.. -...5-5.7.. -5.5 5...8 -..5.5-8. 7.. -5. 5.7.5. -...8 -. 8.7 8.8 -.7...8 -..5.5 -. 7.8.5 -. 7... -... -7.77.8. -7.5 7.5.. -.7.5. -.5 8.. -. 7.8.7.7 -. 5.. 7. 7. 7. -. 7... -.5 5.5. 5...8 -. 7..7. -... 8...7-7. 7.8 5.. -..5. 7.77. -5.7-8. 7.5 5.5.7-8. 7... -5. -. -5 8. 7.8.. -8. 7.5. 5.5-5. -.5-58 8. 8..5 8.7-7.8 8... -5. -8. -7 7.7 7. 7. 8. -7. Freq. NF min opt R n /Z o G a opt RL R n P db OIP IIP (GHz) (db) Mag Ang (db) (db) (Ω) (dbm) (dbm) (dbm).8...7. 8.. 5......8 7.7.5 8.. 5...8...5.7... 5. 5...5.. 5.7 5..7..8..8.8.....5.7.8..8..5....87..8....5. 8...7......5.5 7.........5. 75...5.7 5...7..5. 78..8.5.5 5.....55. 8..7.. 5..5..5.55. 85..5.57. 5..7...5..8...8 5....5.....8 8. 5. 7..8.....7.8 7. 5. 7. 5.7.5.8...5..57 5.5 7.5.5 5..7. -75...87.5 5. 7.7.7 5.5.78.5-5..5..5. 8. 7.7..7. -.5.7.7 7. 5.5 7. 8.

MGA-75 Typical Scattering Parameters and Noise Parameters T C = 5 C, V d =.V, I d = ma, Z O = 5Ω, V ref =.V (from S and Noise Parameters in Figure test circuit) Freq. S S S S S RL in RL out G max Isolation (GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (db) (db) (db) (db) (db)..77 -.8 7. 7.7 -.. 8.5. -8..5.7-7. 5.. - 5.. 8. 8. -7.8.8. - 5.75 8..5-5... 7. -7.5..8-5. 5..5-5... 7. -7...7-7 5.58. 5.5 -..5. 7. -7... -5 5. 8..5-8.8... -7...5-5 5. 5.5 7.5 -.7.7..7 -.8..5-58 5..5 8.5 -.5.8..5 -... - 5..5 8. -.... -.5.5. -5 5.5 5.5. -.... -... - 5.7.5. -8... 5. -..7. -7.8.5. -... 5.7-5..8. -75. 7.5. -.8.5. 5.5-5.7..5-7.8.5. -.7..5 5. -5.5..58-8.75.5. -.5.7.5 5. -5...57-85.7 8.. -5.... -5...5-8. 5.. -. 5..7.7-5...55 -.5.. -8. 5..7.5 -.8..55-5.7.. -. 5..8. -.7.5.5-8. 7.. -5. 5... -.5..5 -. 8.7 8. -58...5. -.7.5.7 -.8 7.7 7.8 -.7... -... -7.5.8 5.5-75. 7... -..5. -. 8.8. -8.5 7... -.8 5.. 7.5 7.. -7. 7.5..8 -. 5.5..7.. -8.5 7.5.5. -... 8.8.. - 8. 7...8 -..5. 7.5 5. -. - 8.5 7... -. 7...5 -. -5. - 8. 7.. 8. -8. 7.5. 5. -. -.8-7. 7.. 8. -8. 8... -. -.7-7. 7. 5. 8. -7. Freq. NF min opt R n /Z o G a opt RL R n P db OIP IIP (GHz) (db) Mag Ang (db) (db) (Ω) (dbm) (dbm) (dbm).8... 5. 7..58 7. 8..... 7. 5.8 7.7.8 7. 8..5..5.. 5.8.8.. 8...5.7. 5.87.8 8...7 8.5..8.8.5....7. 7.7...8. 7...7..8 7....85. 7..7.5 5.7 7. 7.8.8..85. 7..8. 5.7. 8. 5...8. 77..8.8. 7. 8. 5...88. 8..5.. 7. 8. 5.5..8. 8.8..8. 7. 8. 5..5.. 87.7...7 7. 8.8 5...5....5. 7.5 8...5.....75. 7. 8.8.......7 8. 7.5 8.7 7..5..... 7.7 7.8. 8. 5... -78....7 7.5. 8.8 5.5.. -..7.8 7.7. 7. 8.5...8-8.8.58 8..7...

MGA-75 Typical Scattering Parameters (LNA/Switch Powered Off) T C = 5 C, V d = V, I d = ma, Z O = 5Ω Freq. S S S S S RL in RL out (GHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang. (db) (db) (db).8.8.7 5.7 5.8 7 -...8..75...8-8..5.8..7...8 5-7......57 5.57 5.8 5 -......7 8.7 8.8 7-5....8.5 7.8.8.8 -.7.7... 57.5.5.8 -...8.....8 5 -.8.......8 8 -.5.......8 -...8.8..8.8.8 5 -...8 5.....8 8 -...7 5...7.7.8 8 -...7.. 8...8 7 -.8..7

Applications Information: Designing with the MGA-75 IC Amplifier/Bypass Switch Description The MGA-75 is a single-stage, GaAs IC amplifier with an integrated bypass switch. A functional diagram of the MGA-75 is shown in Figure. The MGA-75 is designed for receivers and transmitters operating from MHz to GHz with an emphasis on. GHz CDMA applications. The MGA-75 combines low noise performance with high linearity to make it especially advantageous for use in receiver front-ends. INPUT BYPASS MODE AMPLIFIER Figure. MGA-75 Functional Diagram. OUTPUT The purpose of the switch feature is to prevent distortion of high signal levels in receiver applications by bypassing the amplifier altogether. The bypass switch can be thought of as a -bit digital AGC circuit that not only prevents distortion by bypassing the MGA-75 amplifier, but also reduces front-end system gain by approximately db to avoid overdriving subsequent stages in the receiver such as the mixer. An additional feature of the MGA-75 is the ability to externally set device current to balance output power capability and high linearity with low DC power consumption. The adjustable current feature of the MGA-75 allows it to deliver output power levels in excess of +5 dbm (PdB), thus extending its use to other system applications such as transmitter driver stages. The MGA-75 is designed to operate from a +-volt power supply and is contained in a miniature -lead, SOT- (SC-7) package to minimize printed circuit board space. LNA Applications For low noise amplifier applications, the MGA-75 is typically biased in the ma range. Minimum NF occurs at ma as noted in the performance curve of NFmin vs. Id. Biasing at currents significantly less than ma is not recommended since the characteristics of the device began to change very rapidly at lower currents. The MGA-75 is matched internally for low NF. Over a current range of ma, the magnitude of É opt at MHz is typically less than.5 and additional impedance matching would only net about. db improvement in noise figure. Without external matching, the input return loss for the MGA-75 is approximately 5 db at MHz. If desired, a small amount of NF can be traded off for a significant improvement in input match. For example, the addition of a series inductance of.7 to. nh at the input of the MGA-75 will improve the input return loss to greater than db with a sacrifice in NF of only. db. The output of the MGA-75 is internally matched to provide an output SWR of approximately : at MHz. Input and output matches both improve at higher frequencies. Driver Amplifier Applications The flexibility of the adjustable current feature makes the MGA-75 suitable for use in transmitter driver stages. Biasing the amplifier at 5 ma enables it to deliver an output power at -db gain compression of up to + dbm. Power efficiency in the unsaturated driver mode is on the order of %. If operated as a saturated amplifier, both output power and efficiency will increase. Since the MGA-75 is internally matched for low noise figure, it may be desirable to add external impedance matching at the input to improve the power match for driver applications. Since the reactive part of the input of the device impedance is capacitive, a series inductor at the input is often all that is needed to provide a suitable match for many applications. For MHz circuits, a series inductance of. nh will match the input to a return loss of approximately db. As in the case of low noise bias levels, the output of the MGA-75 is already well matched to 5 É and no additional matching is needed for most applications. When used for driver stage applications, the bypass switch feature of the MGA-75 can be used to shut down the amplifier to conserve supply current during non-transmit periods. Supply current in the bypass state is nominally μa. Biasing Biasing the MGA-75 is similar to biasing a discrete GaAs FET. Passive biasing of the MGA-75 may be accomplished by either of two conventional methods, either by biasing the gate or by using a source resistor.

Gate Bias Using this method, Pins and of the amplifier are DC grounded and a negative bias voltage is applied to Pin as shown in Figure. This method has the advantage of not only DC, but also grounding both of the ground pins of the MGA-75. Direct grounding of the device s ground pins results in slightly improved performance while decreasing potential instabilities, especially at higher frequencies. The disadvantage is that a negative supply voltage is required. INPUT OUTPUT & V d Source Resistor Bias The source resistor method is the simplest way of biasing the MGA -75 using a single, positive supply voltage. This method, shown in Figure, places the Input (Pin ) at DC ground and requires both of the device grounds (Pins and ) to be bypassed. Device current, Id, is determined by the value of the source resistance, Rbias, between either Pin or Pin of the MGA-75 and DC ground. Note: Pins and are connected internally in the IC. Maximum device current (approximately 5 ma) occurs for Rbias =. INPUT OUTPUT & V d V ref Figure. Gate Bias Method. DC access to the input terminal for applying the gate bias voltage can be made through either a C or high impedance transmission line as indicated in Figure. The device current, Id, is determined by the voltage at Vref (Pin ) with respect to ground. A plot of typical Id vs. Vref is shown in Figure. Maximum device current (approximately 5 ma) occurs at Vref =. I d (ma) 5 -.8 -.7 -. -.5 -. -. -. V ref (V) Figure. Device Current vs. Vref. The device current may also be estimated from the following equation: Vref =. I d. where Id is in ma and Vref is in volts. The gate bias method would not normally be used unless a negative supply voltage was readily available. For reference, this is the method used in the characterization test circuits shown in Figures and of the MGA-75 data sheet. R bias Figure. Source Resistor Bias. A simple method recommended for DC grounding the input terminal is to merely add a resistor from Pin to ground, as shown in Figure. The value of the shunt R can be comparatively high since the only voltage drop across it is due to minute leakage currents that in the μa range. A value of KΩ would adequately DC ground the input while loading the signal by only. db loss. A plot of typical Id vs. Rbias is shown in Figure 5. Id (ma) 5 8 R bias () Figure 5. Device Current vs. R bias. The approximate value of the external resistor, Rbias, may also be calculated from: Rbias = (. Id) Id where Rbias is in ohms and Id is the desired device current in ma. The source resistor technique is the preferred and most common method of biasing the MGA -75.

Adaptive Biasing For applications in which input power levels vary over a wide range, it may be useful to dynamically adapt the bias of the MGA-75 to match the signal level. This involves sensing the signal level at some point in the system and automatically adjusting the bias current of the ampli fier accordingly. The advantage of adaptive biasing is conservation of supply current (longer battery life) by using only the amount of current necessary to handle the input signal without distortion. A DC blocking capacitor at the output of the IC isolates the supply voltage from succeeding circuits. If the source resistor method of biasing is used, the input terminal of the MGA-75 is at DC ground potential and a blocking capacitor is not required unless the input is connected directly to a preceding stage that has a DC voltage present. V d = +.5 V Adaptive biasing of the MGA-75 can be accomplished by either analog or digital means. For the analog control case, an active current source (discrete device or IC) is used in lieu of the source bias resistor. For simple digital control, electronic switches can be used to control the value of the source resistor in discrete increments. Both methods of adaptive biasing are depicted in Figure. Input 7 C Output Vref = -.5 V Figure 7. DC Schematic for Gate Bias. V d = + V Analog Control C Digital Control Input 7 Output (a) Analog (b) Digital R bias Figure. Adaptive Bias Control. Applying the Device Voltage Common to all methods of biasing, voltage Vd is applied to the MGA-75 through the Output connection (Pin ). A choke is used to isolate the signal from the DC supply. The bias line is capacitively bypassed to keep from the DC supply lines and prevent resonant dips or peaks in the response of the amplifier. Where practical, it may be cost effective to use a length of high impedance transmission line (preferably /) in place of the C. When using the gate bias method, the overall device voltage is equal to the sum of Vref at Pin and voltage Vd at Pin. As an example, to bias the device at the typical operating voltage of volts, Vd would be set to.5 volts for a Vref of -.5 volts. Figure 7 shows a DC schematic of a gate bias circuit. Just as for the gate bias method, the overall device voltage for source resistor biasing is equal to Vref + Vd. Since Vref is zero when using a source resistor, Vd is the same as the device operating voltage, typically volts. A source resistor bias circuit is shown in Figure 8. Figure 8. DC Schematic of Source Resistor Biasing. Biasing for Higher Linearity or Output Power While the MGA-75 is designed primarily for use up to 5 ma in + volt applications, the output power can be increased by using higher currents and/or higher supply voltages. If higher bias levels are used, appropriate caution should be observed for both the thermal limits and the Absolute Maximum Ratings. As a guideline for operation at higher bias levels, the Maximum Operating conditions shown in the data sheet table of Absolute Maximum Ratings should be followed. This set of conditions is the maximum combination of bias voltage, bias current, and device temperature that is recommended for reliable operation. Note: In contrast to Absolute Maximum ratings, in which exceeding any one parameter may result in damage to the device, all of the Maximum Operating conditions may reliably be applied to the MGA-75 simultaneously. 5

Controlling the Switch The state of the MGA-75 (amplifier or bypass mode) is controlled by the device current. For device currents greater than 5 ma, the MGA-75 functions as an amplifier. If the device current is set to zero, the MGA- 75 is switched into a bypass mode in which the amplifier is turned off and the signal is routed around the amplifier with a loss of approximately.5 db. The bypass state is normally engaged in the presence of high input levels to prevent distortion of the signal that might occur in the amplifier. In the bypass state, the input TOI is very high, typically + dbm at MHz. The simplest method of placing the MGA-75 into the bypass mode is to open-circuit the ground terminals at Pins and. With the ground connection open, the internal control circuit of the MGA-75 auto-switches from the amplifier mode into a bypass state and the device current drops to near zero. Nominal current in the bypass state is μa with a maximum of 5 μa. R bias Bypass Switch Enable Figure. MGA-75 Amplifier/Bypass State Switching. An electronic switch can be used to control states as shown in Figure. The control switch could be implemented with either a discrete transistor or simple IC. The speed at which the MGA-75 switches between states is extremely fast and will normally be limited by the time constants of external circuit components, such as the bias circuit and the bypass and blocking capacitors. The input and output of the MGA-75 while in the bypass state are internally matched to 5 É. The input return loss can be further improved at MHz by adding a.7 to. nh series inductor added to the input. This is the same approximate value of inductor that is used to improve input match when the MGA-75 is in the amplifier state. Thermal Considerations Good thermal design is always an important consideration in the reliable use of any device, since the Mean Time To Failure (MTTF) of semiconductors is inversely proportional to the operating temperature. The MGA-75 is a comparatively low power dissipation device and, as such, operates at conservative temperatures. When biased at volts and ma for LNA applications, the power dissipation is. volts x ma, or mw. The temperature increment from the IC channel to its case is then. watt x C/watt, or only C. Subtracting the channel-to-case temperature rise from the suggested maximum junction temperature of 5 C, the resulting maximum allowable case temperature is 8 C. The worst case thermal situation occurs when the MGA- 75 is operated at its Maximum Operating conditions in an effort to maximize output power or achieve minimum distortion. A similar calculation for the Maximum Operating bias of. volts and ma yields a maximum allowable case temperature of C. This calculation further assumes the worst case of no power being extracted from the device. When operated in a saturated mode, both power-added efficiency and the maximum allowable case temperature will increase. Note: Case temperature for surface mount packages such as the SOT- refers to the interface between the package pins and the mounting surface, i.e., the temperature at the PCB mounting pads. The primary heat path from the IC chip to the system heatsink is by means of conduction through the package leads and ground vias to the groundplane of the PCB. PCB Layout and Grounding When laying out a printed circuit board for the MGA- 75, several points should be considered. Of primary concern is the bypassing of the ground terminals when the device is biased using the source resistor method.

Package Footprint A suggested PCB pad print for the miniature,-lead SOT- (SC-7) package used by the MGA-75 is shown in Figure. This pad print provides allowance for package placement by auto- mated assembly equipment without adding excessive parasitics that could impair the high frequency performance of the MGA-75.The layout is shown with a footprint of the MGA-75 superimposed on the PCB pads for reference..8..5...5.5.5 Figure. Recommended PCB Pad Layout for Avago s SC7 L/SOT- Products..7.7.8. bypass For layouts using the source resistor method of biasing,both of the ground terminals of the MGA- 75 must be well bypassed to maintain device stability. Beginning with the package pad print in Figure, an layout similar to the one shown in Figure is a good starting point for using the MGA-75 with capacitor-bypassed ground terminals.it is a best practice to use multiple vias to minimize overall ground path inductance. Two capacitors are used at each of the PCB pads for both Pins and. The value of the bypass capacitors is a balance between providing a small reactance for good grounding, yet not being so large that the capacitor s parasitics introduce undesirable resonances or loss. If the source resistor biasing method is used,a ground pad located near either Pin or pin may be used to connect the current-setting resistor (Rbias) directly to DC ground. If the Rbias resistor is not located immediately adjacent to the MGA-75 (as may be the case of dynamic control of the device s linearity), then a small series resistor (e.g., Ω) located near the ground terminal will help de-q the connection from the MGA-75 to an external currentsetting circuit. PCB Materials FR- or G- type dielectric materials are typical choices for most low cost wireless applica- tions using single or multilayer printed circuit boards. The thickness of singlelayer boards usually range from. to. inches. Circuit boards thicker than. inches are not recommended due to excessive induc- tance in the ground vias. Application Example An example evaluation PCB layout for the MGA-75 is shown in Figure. This evalua- tion circuit is designed for operation from a +-volt supply and includes provision for a -bit DIP switch to set the state of the MGA-75. For evaluation purposes, the -bit switch is used to set the device to either of four states: ()bypass mode switch bypasses the amplifier, ()low noise amplifier mode low bias current, ()and () driver ampli- fier modes high bias currents. A completed evaluation amplifier optimized for use at MHz is shown with all related compo- nents and SMA connectors in Figure. A schematic diagram of the evaluation circuit is shown in Figure with component values in Table. The on-board resistors R and R form the equivalent source bias resistor Rbias as indicated in the schematic diagram in Figure. In this example,resistor values of R = Ω and R = Ω were chosen to set the nominal device current for the four states to: () bypass mode, ma, () LNA mode, ma, () driver, 5 ma, and, () driver, ma. Vd IN Vin 7 Figure. Layout for Bypass. MGA-7, MGA-7 HM 8/8 Out Vcon Figure. PCB Layout for Evaluation Circuit. 7

Other currents can be set by positioning the DIP switch to the bypass state and adding an external bias resistor to Vcon. Unless an external resistor is used to set the current, the Vcon terminal is left open. DC blocking capacitors are provided for the both the input and output. The -pin,. centerline single row headers attached to the Vd and Vcon connections on the PCB provide a convenient means of making connections to the board using either a mating connector or clip leads. A Note on Performance Actual performance of the MGA-75 as measured in an evaluation circuit may not exactly match the data sheet specifications. The circuit board material, passive components, bypasses, and connectors all introduce losses and parasitics that degrade device performance. For the evaluation circuit above, fabricated on.-inch thick GETEK [] GD ( r =.) dielectric material, circuit losses of about. db would be expected at both the input an output sides of the IC at MHz. Measured noise figure ( volts, ma bias) would then be approximately.8 db and gain.8 db. Table. Component Values for MHz Amplifier. R = 5. KΩ C ( ea) = pf R = 5. KΩ C ( ea) = pf R = Ω C = pf R = Ω C = 7 pf L =. nh C = pf C = nh C = pf SW, SW DIP switch C5 = pf SC Short C = pf Hints and Troubleshooting Preventing Oscillation Stability of the MGA-75 is dependent on having very good grounding. Inadequate device grounding or poor PCB layout techniques could cause the device to be potentially unstable. [] General Electric Co. V d C C Vd IN Vin C C C L R C R R C SW ON C C 7 C5 SC C8 R C MGA-7, MGA-7 HM 8/8 C C C Out Vcon Input C C L R C C 7 C5 C C C C Output Vin SW R R C SW R R bias C Vcon Figure. Completed Amplifier with Component Reference Designators. Figure. Schematic Diagram of MHz Evaluation Amplifier. 8

Even though a design may be unconditionally stable (K > and B > ) over its full frequency range, other possibilities exist that may cause an amplifier circuit to oscillate. One condition to check for is feedback in the bias circuit. It is important to capacitively bypass the connections to active bias circuits to ensure stable operation. In multistage circuits, feedback through bias lines can also lead to oscillation. Components of insufficient quality for the frequency range of the amplifier can sometimes lead to instability. Also, component values that are chosen to be much higher in value than is appropriate for the application can present a problem. In both of these cases, the components may have reactive parasitics that make their impedances very different than expected. Chip capacitors may have excessive inductance, or chip inductors can exhibit resonances at unexpected frequencies. A Note on Supply Line Bypassing Multiple bypass capacitors are normally used throughout the power distribution within a wireless system. Consideration should be given to potential resonances formed by the combination of these capacitors and the inductance of the DC distribution lines. The addition of a small value resistor in the bias supply line between bypass capacitors will often de-q the bias circuit and eliminate resonance effects. Statistical Parameters Several categories of parameters appear within the electrical specification portion of the MGA-75 data sheet. Parameters may be described with values that are either minimum or maximum, typical, or standard deviations. The values for parameters are based on comprehensive product characterization data, in which automated measurements are made on a statistically significant number of parts taken from nonconsecutive process lots of semiconductor wafers. The data derived from product characterization tends to be normally distributed, e.g., fits the standard bell curve. Parameters considered to be the most important to system performance are bounded by minimum or maximum values. For the MGA-75, these parameters are: V c test, NF test, G a test, IIP test, and IL test. Each of the guaranteed parameters is % tested as part of the normal manufacturing and test process. measurements or mathematical averaging may not be practical, such as S-parameters or Noise Parameters and the performance curves, the data represents a nominal part taken from the center of the characterization distribution. Typical values are intended to be used as a basis for electrical design. To assist designers in optimizing not only the immediate amplifier circuit using the MGA-75, but to also evaluate and optimize trade-offs that affect a complete wireless system, the standard deviation ( ) is provided for many of the Electrical Specification parameters (at 5 C). The standard deviation is a measure of the variability about the mean. It will be recalled that a normal distribution is completely described by the mean and standard deviation. Standard statistics tables or calculations provide the probability of a parameter falling between any two values, usually symmetrically located about the mean. Referring to Figure 5 for example, the probability of a parameter being between ± is 8.%; between ± is 5.%; and between ± is.7%. 8% 5% % -σ -σ -σ Mean () +σ +σ +σ (typical) Parameter Value Figure 5. Normal Distribution Curve. Phase Reference Planes The positions of the reference planes used to specify S- parameters and Noise Parameters for the MGA-75 are shown in Figure. As seen in the illustration, the reference planes are located at the point where the package leads contact the test circuit. REFERENCE PLANES TEST CIRCUIT Figure. Phase Reference Planes. Values for most of the parameters in the table of Electrical Specifications that are described by typical data are the mathematical mean (μ ), of the normal distribution taken from the characterization data. For parameters where

Part Number Ordering Information No. of Part Number Devices Container MGA-75-TRG 7 Reel MGA-75-TRG Reel MGA-75-BLKG antistatic bag Note: For lead-free option, the part number will have the character G at the end. Package Dimensions SC-7 L/SOT-. (.5) BSC Recommended PCB Pad Layout for Avago s SC7 L/SOT- Products. (.5). (.) HE E. (.). (.7).5 (.5) BSC D b.5 (.5). (.5) A A Dimensions in mm (inches) b A L C DIMENSIONS (mm) SYMBOL E D HE A A A b b c L MIN..5.85.8.8.8..5.55.. MAX..5.5......7.. NOTES:. All dimensions are in mm.. Dimensions are inclusive of plating.. Dimensions are exclusive of mold flash & metal burr.. All specifications comply to EIAJ SC7. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form.. Package surface to be mirror finish.

Device Orientation REEL TOP VIEW mm END VIEW USER FEED DIRECTION COVER TAPE CARRIER TAPE 8 mm 7x 7x 7x 7x Tape Dimensions For Outline T P D P P E C F W t (CARRIER TAPE THICKNESS) D T t (COVER TAPE THICKNESS) MAX. K MAX. A B CAVITY PEORATION DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES) LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION A B K P D D P E......... +.5.55....75......7..57.. +.. +..57... CARRIER TAPE WIDTH THICKNESS W t 8. +. -..5..5 +...8 COVER TAPE WIDTH TAPE THICKNESS C 5.. T t...5 +..5. DISTANCE CAVITY TO PEORATION (WIDTH DIRECTION) CAVITY TO PEORATION (LENGTH DIRECTION) F P.5.5..5.8..7. For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 5- Avago Technologies. All rights reserved. Obsoletes 58-8EN AV-EN - June 8,

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