Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fuy Avaanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G HEXFET Power MOSFET D S IRF37SPbF IRF37LPbF S = 0V R DS(on) = 23mΩ I D = 57A The D 2 Pak is a surface mount power package capabe of accommodating die sizes up to HEX-4. It provides the highest power capabiity and the owest possibe on-resistance in any existing surface mount package. The D 2 Pak is suitabe for high current appications because of its ow interna connection resistance and can dissipate up to 2.0W in a typica surface mount appication. The through-hoe version (IRF37L) is avaiabe for ow-profie appications. D 2 Pak IRF37SPbF TO-262 IRF37LPbF Absoute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, @ V 57 I D @ T C = 0 C Continuous Drain Current, @ V 40 A I DM Pused Drain Current 180 P D @T C = 25 C Power Dissipation 200 W Linear Derating Factor 1.3 W/ C Gate-to-Source Votage ± 20 V I AR Avaanche Current 28 A E AR Repetitive Avaanche Energy 20 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.8 V/ns T J Operating Junction and -55 to 175 T STG Storage Temperature Range Sodering Temperature, for seconds 300 (1.6mm from case ) C Therma Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.75 C/W R θja Junction-to-Ambient (PCB Mounted,steady-state)** 40 1
IRF37S/LPbF Eectrica Characteristics @ T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Votage 0 V = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0.13 V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance 23 mω = V, I D =28A (th) Gate Threshod Votage 2.0 4.0 V =, I D = 250µA g fs Forward Transconductance 32 S = 25V, I D = 28A I DSS Drain-to-Source Leakage Current 25 V µa DS = 0V, = 0V 250 = 80V, = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 0 = 20V na Gate-to-Source Reverse Leakage -0 = -20V Q g Tota Gate Charge 130 I D = 28A Q gs Gate-to-Source Charge 26 nc = 80V Q gd Gate-to-Drain ("Mier") Charge 43 = V, See Fig. 6 and 13 t d(on) Turn-On Deay Time 12 V DD = 50V t r Rise Time 58 I D = 28A ns t d(off) Turn-Off Deay Time 45 R G = 2.5Ω t f Fa Time 47 = V, See Fig. Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 3130 = 0V C oss Output Capacitance 4 = 25V C rss Reverse Transfer Capacitance 72 pf ƒ = 1.0MHz, See Fig. 5 E AS Singe Puse Avaanche Energy 60 280 mj I AS = 28A, L = 0.70mH Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 57 (Body Diode) showing the A G I SM Pused Source Current integra reverse 230 (Body Diode) p-n junction diode. S V SD Diode Forward Votage 1.2 V T J = 25 C, I S = 28A, = 0V t rr Reverse Recovery Time 140 220 ns T J = 25 C, I F = 28A Q rr Reverse Recovery Charge 670 nc di/dt = 0A/µs t on Forward Turn-On Time Intrinsic turn-on time is negigibe (turn-on is dominated by L S L D ) D S Notes: Repetitive rating; puse width imited by max. junction temperature. (See fig. 11). Starting T J = 25 C, L = 0.70mH, R G = 25Ω, I AS = 28A, =V. (See Figure 12). ƒ 28A, di/dt 380A/µs, V DD V (BR)DSS, T J 175 C. Puse width 400µs; duty cyce 2%. This is a typica vaue at device destruction and represents operation outside rated imits. This is a cacuated vaue imited to T J = 175 C. Uses IRF37 data and test conditions. **When mounted on 1" square PCB (FR-4 or G- Materia). For recommended footprint and sodering techniques refer to appication note #AN-994. 2
I D, Drain-to-Source Current (Α) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF37S/LPbF 00 0 VGS TOP 16V V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V 00 0 VGS TOP 16V V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V 3.5V 3.5V 1 0.1 20µs PULSE WIDTH Tj = 25 C 0.1 1 0, Drain-to-Source Votage (V) 1 0.1 20µs PULSE WIDTH Tj = 175 C 0.1 1 0, Drain-to-Source Votage (V) Fig 1. Typica Output Characteristics Fig 2. Typica Output Characteristics 00.00 3.0 I D = 57A 2.5 0.00 T J = 175 C.00 T J = 25 C 1.00 = 50V 15V 20µs PULSE WIDTH 0. 3.0 4.0 5.0 6.0 7.0 8.0 9.0, Gate-to-Source Votage (V) R DS(on), Drain-to-Source On Resistance (Normaized) 2.0 1.5 1.0 0.5 = V 0.0-60 -40-20 0 20 40 60 80 0 120 140 160 180 T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3
I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance(pF) IRF37S/LPbF 0000 000 00 0 = 0V, f = 1 MHZ C iss = C gs C gd, C ds C rss = C gd C oss = C ds C gd Ciss Coss Crss SHORTED, Gate-to-Source Votage (V) 12 7 5 2 I D = 28A = 80V = 50V = 20V 1 0, Drain-to-Source Votage (V) 0 0 20 40 60 80 0 Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. Drain-to-Source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage 00.00 00 OPERATION IN THIS AREA LIMITED BY R DS (on) 0.00 T J = 175 C 0 0µsec.00 1 1msec 1.00 T J = 25 C = 0V 0. 0.0 0.5 1.0 1.5 2.0 V SD, Source-toDrain Votage (V) Fig 7. Typica Source-Drain Diode Forward Votage 0.1 Tc = 25 C msec Tj = 175 C Singe Puse DC 0.01 0.01 0.1 1 0 00, Drain-to-Source Votage (V) Fig 8. Maximum Safe Operating Area 4
IRF37S/LPbF 60 R D I D, Drain Current (A) 50 40 30 20 0 25 50 75 0 125 150 175 T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature 90% R G Puse Width 1 µs Duty Factor 0.1 % D.U.T. Fig a. Switching Time Test Circuit % t d(on) t r t d(off) t f Fig b. Switching Time Waveforms - V DD 1 Therma Response (Z thjc ) 0.1 D = 0.50 0.20 0. 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectanguar Puse Duration (sec) Fig 11. Maximum Effective Transient Therma Impedance, Junction-to-Case 5
IRF37S/LPbF R G 20V tp Fig 12a. Uncamped Inductive Test Circuit tp L D.U.T IAS 0.01Ω 15V DRIVER V (BR)DSS - V DD A E AS, Singe Puse Avaanche Energy (mj) 550 440 330 220 1 TOP BOTTOM 0 25 50 75 0 125 150 175 Starting T, Junction Temperature ( J C) I D 11A 20A 28A Fig 12c. Maximum Avaanche Energy Vs. Drain Current I AS Fig 12b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. 50KΩ Q G 12V.2µF.3µF Q GS Q GD D.U.T. V - DS V G 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Samping Resistors Fig 13b. Gate Charge Test Circuit 6
IRF37S/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T* ƒ - Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer - - R G dv/dt controed by R G I SD controed by Duty Factor "D" D.U.T. - Device Under Test - V DD * Reverse Poarity of D.U.T for P-Channe Driver Gate Drive Period P.W. D = P.W. Period [ =V ] *** D.U.T. I SD Waveform Reverse Recovery Current Re-Appied Votage Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt Inductor Curent Body Diode Rippe 5% Forward Drop [ V DD ] [ ] I SD *** = 5.0V for Logic Leve and 3V Drive Devices Fig 14. For N-channe HEXFET power MOSFETs 7
IRF37S/LPbF D 2 Pak (TO-263AB) Package Outine Dimensions are shown in miimeters (inches) D 2 Pak (TO-263AB) Part Marking Information 7,6,6$1,5)6:,7 /27&2'(,17(51$7,21$/ $66(0%/('21:: 5(&7,),(5,17($66(0%/</,1(/ /2*2 $66(0%/< /27&2'( )6 3$57180%(5 '$7(&2'( <($5 :((. /,1(/ 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( )6 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing pease refer to IR website at http://www.irf.com/package/ 8
IRF37S/LPbF TO-262 Package Outine Dimensions are shown in miimeters (inches) TO-262 Part Marking Information (;$03/( 7,6,6$1,5// /27&2'( $66(0%/('21::,17($66(0%/</,1(&,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing pease refer to IR website at http://www.irf.com/package/ 9
IRF37S/LPbF D 2 Pak Tape & Ree Information Dimensions are shown in miimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065).90 (.429).70 (.421) 11.60 (.457) 11.40 (.449) 16. (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing pease refer to IR website at http://www.irf.com/package/ IR WORLD HEADQUARTERS: 1 N. Sepuveda Bvd., E Segundo, Caifornia 90245, USA To contact Internationa Rectifier, pease visit http://www.irf.com/whoto-ca/