PWM Step-Up DC/DC Converter for Panel Backlight. Applications. Features. Fig. 1

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PWM Step-Up DC/DC Converter for Panel Backlight General Description The is a highly efficient, step-up DC/DC converter for driving white LEDs. The device can drive up to 9 serially connected white LEDs from a single Li-Ion battery, or to drive multiple serial and parallel combinations with a DC power supply from 2.5V to 5.5V. The uses current mode and pulse-width modulated (PWM) operation. Its high switching operation frequency of 1.2MHz allows the system to use small inductor, input and output capacitors. An internal compensation circuit can reduce the external component count. To safeguard the system, the includes various protection circuits such as under-voltage lockout, current limit, over voltage and thermal shutdown. are available in the tiny packages of SOT-23-6L. Applications Mobile Phone Digital Still Cameras Portable applications MP3 Players GPS Receivers Features Up to 9 WLEDs supports Low Quiescent Current: 120 μa Over Voltage Protection: 31V Inherently Matched LED Current Shutdown Current < 1μA Reference Voltage 0.245V PWM Dimming Control (2KHz~200kHz) Internal Soft Start and Compensation 1.4A Internal power MOSFET Switch Low Profile SOT-23-6 Package Typical Application (9S3P) Fig. 1 Revision: 0.1 1/13

Connection Diagram Order Information -00VC06NRR 00 Output voltage VC06 SOT-23-6L Package NRR RoHS & Halogen free package Rating: -40 to 85 C Package in Tape & Reel Order, Marking & Packing Information Package Vout Product ID Marking Packing SOT-23-6L Adjustable -00VC06NRR Tape & Reel 3Kpcs Revision: 0.1 2/13

Function Block Fig. 2 Pin Functions Pin Name SOT-23-6L Pin # LX 1 GND 2 Ground Pin. FB 3 Function Switch Pin. Connect inductor/diode here. Feedback Pin. Reference voltage is 0.245V, connect cathode of lowest LED and resistor here. EN 4 Chip Enable Pin and PWM Dimming Control Pin. Connect to 1.2V or higher to enable device, 0.4V or less to disable device. OUT 5 Over Voltage Protection Pin. IN 6 Input Voltage Pin. Revision: 0.1 3/13

Absolute Maximum Ratings Devices are subjected to failure if they stay above absolute maximum ratings Input Voltage 0.3V to 6V Operating Temperature Range 40 C to 85 C EN, VFB Voltages LX,OUT Voltage ESD Susceptibility 0.3V to VIN 0.3V to 37V HBM 2kV MM 200V Storage Temperature 65 C to 150 C Junction Temperature 150 C Lead Temperature (Soldering, 10 sec) 260 C Thermal data Package Thermal resistance Parameter Value SOT-23-5 θja (Note 2) Junction-ambient 250 C/W θjc (Note 3) Junction-case 81 o C/W Note 1: TJ is a function of the ambient temperature TA and power dissipation PD (TJ = TA + (PD) * (165 C/W)). Note 2: θja is measured in the natural convection at TA=25 on a highly effective thermal conductivity test board (2 layers, 2S0P ) according to the JEDEC 51-7 thermal measurement standard. Note 3: θjc represents the heat resistance between the chip and the package top case. Electrical Characteristics VIN = 3.7V, CIN=4.7uF, COUT=1uF, IOUT=20mA, L=22uH, TA = 25 C, unless otherwise specified. PARAMETER TEST CONDITION MIN TYP MAX UNIT Input Voltage 2.5 5.5 Under Voltage Lock Out 1.8 2.4 V UVLO Hysteresis 0.1 V Supply Current Continuously Switching 1 ma Quiescent Current No Switching 120 μa Shutdown Current VEN < 0.4V 1 ua Operation Frequency 0.9 1.2 1.5 MHz Maximum Duty Cycle 93 95 % Feedback Voltage 232.7 245 257.3 mv Thermal Shutdown Protection 150 Thermal Shutdown Hysteresis 10 Ron Isw = 200mA 0.5 0.8 ohm Current Limit 1.4 A Shutdown Voltage Low 0.4 V Enable Voltage High 1.2 V EN Leakage Current 1.0 μa Revision: 0.1 4/13

Electrical Characteristics VIN = 3.7V, CIN=4.7uF, COUT=1uF, IOUT=20mA, L=22uH, TA = 25 C, unless otherwise specified. PARAMETER TEST CONDITION MIN TYP MAX UNIT Maximum Output Voltage 30 V OVP 31 V OVP Hysteresis 1 3 V Revision: 0.1 5/13

Typical Performance Characteristics VIN = 3.7V, CIN=4.7uF, COUT=1uF, IOUT=20mA, L=22uH, TA = 25 C, unless otherwise specified. Efficiency vs. Input Voltage (Vout=30V) Efficiency vs. Output Current (Vout=30V) Efficiency (% ) 100 90 80 70 60 50 Iload=20mA 40 Iload=10mA Iload=30mA 30 20 10 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Input Voltage (V) Efficiency (% ) 100 90 80 70 60 VIN=5V 50 40 30 20 10 0 20 30 40 50 60 70 80 90 100 Output Current (ma) Efficiency vs. Output current (Vout=24V) Efficiency vs. Output current (Vout=12V) 100 90 80 100 90 80 Efficiency (% ) 70 60 50 40 30 VIN=5V Efficiency (% ) 70 60 50 40 30 VIN=5V 20 20 10 10 0 20 30 40 50 60 70 80 90 100 Output Current (ma) 0 20 30 40 50 60 70 80 90 100 Output Current (ma) Frequency vs. Input Voltage Frequency vs. Temperature Frequency (MHz) 1.20 1.17 1.14 1.11 1.08 1.05 1.02 0.99 0.96 0.93 0.90 ILED=20mA 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Input Voltage (V) Frequency (MHz) 1.20 1.17 1.14 1.11 1.08 1.05 1.02 0.99 0.96 0.93 0.90-40 -15 10 35 60 85 Temperature ( ) ILED=20mA Revision: 0.1 6/13

Typical Performance Characteristics VIN = 3.7V, CIN=4.7uF, COUT=1uF, IOUT=20mA, L=22uH, TA = 25 C, unless otherwise specified. Reference Voltage vs. Input Voltage Reference Voltage vs. Temperature Reference Voltag e (m V) 250 249 248 247 246 245 244 243 242 241 240 8WLED, ILED=20mA 2.5 2.8 3.1 3.4 3.7 4.0 4.3 4.6 4.9 5.2 5.5 Input Voltage (V) Reference Voltag e (m V) 250 249 248 247 246 245 244 243 242 241 240-40 -15 10 35 60 85 Temperature ( ) Enable Threshold vs. Input Voltage LED Current vs. Duty 1.00 30 Enable Voltag e (V ) 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 Enable Disable 2.5 2.8 3.1 3.4 3.7 4.0 4.3 4.6 4.9 5.2 5.5 Input Voltage (V) LED C urrent (m A) 25 20 15 10 5 0 200KHz 100KHz 0 10 20 30 40 50 60 70 80 90 100 Duty (%) 20KHz 8WLED, ILED=20mA Power ON from EN Power OFF from EN EN EN VOUT VOUT LED=6S6P LED=6S6P Revision: 0.1 7/13

Application Information Detailed Description The is a constant frequency current-mode boost converter, which can driver 9 series of WLED. The device provides the same output current through each WLED that get even illumination. The fast operation frequency allows for small inductor and input/output capacitors. During normal operation, the internal oscillators send a pulse signal to set latch and turn on internal MOSFET each duty circle. A current sense voltage sums MOSFET current and slope signal connected to the negative terminal of the PWM comparator. When this signal voltage exceeds output voltage of error amplifier, the PWM comparator will send a signal to reset latch and turn off internal MOSFET. The output voltage of error amplifier is magnified from the difference between reference voltage and feedback voltage. If reference voltage is higher than feedback voltage, more current is delivered to the output, the other way, less current is delivered. UVLO The provides under voltage lock out protection. When VIN is down close to UVLO threshold, the UVLO block will send a signal to turn off power MOSFET. The device stops to supply current to output. The 100mV hysteresis prevents supply transients from causing a restart. Once the VIN exceed UVLO threshold, the device unlocks latch and turn power MOSFET. Enable / Disable The enter shutdown mode when EN pin voltage is less 0.4V. When in shutdown mode, all internal circuits of the are turn off and quiescent current is reduced to 1uA. When driver EN pin voltage is higher than 1.2V, start-up begins. EN pin can be used for dimming control, the PWM frequency range is from 2KHz to 200kHz. The average LED current is proportional to the PWM duty cycle, while 0% duty cycle triggers zero WLEDs current and 100% duty cycle triggers full WLEDs current. OVP When WLEDs are open, the boost control loop just like open loop operation, it may causes over voltage damage on LX pin. In order to prevent this damage, the provides OVP function to provide it. The protection threshold is set at 31V. OTP The internal thermal sensor turn off power MOSFET when junction temperature is exceeded 150, the OTP is designed with a 10 hysteresis. Revision: 0.1 8/13

LED Current Setting Referring to Figure 1 of the typical application, adjusting the output current changes the brightness of WLEDs, the regulates output current by sense resistor (R1). The output current is given by: LED current = 0.245V / R1 C in and C out Selection It is recommended to use the X5R or X7R which have best temperature and voltage characteristics of all the ceramics for a give value and size. A minimum input capacitance of 1μF is required for the, the capacitor value may be increased without limit, and higher capacitance can stable the switching voltage (LX) at low temperature. The typical output capacitor value is 1μF, higher capacitance can be used to reduce voltage ripple. Inductor Selection The inductor values range from 4.7μH to 22μH. The typical inductor value is 22μH. The low DCR inductor is preferred. In addition, the limit saturation current of inductor must exceed current limit of the. Diode Selection Referring to Figure 1 of the typical application, the is high switching control devise which demands a high speed rectification diode for optimum efficiency. The schottky diode is preferred, for high efficiency, schottky diode provide fast recovery time and low forward voltage that reduce power loss. The recover breakdown voltage of schottky diode must exceed output voltage. Revision: 0.1 9/13

Application Circuit Application circuit for 9S1P VIN 22uH/10uH L SCHOTTKY VOUT 4.7uF/ 10uF C1 6 IN LX 1 C2 2.2uF /1uF PWM Dimming Control 2KHz~200KHz 4 EN OUT 5 9LEDs 2 GND FB 3 R1 12Ω Fig. 3 Application circuit for 9S3P Fig. 4 Revision: 0.1 10/13

Package Outline Drawing SOT-23-6 Symbol Dimension in mm Min. Max. A 0.90 1.45 A1 0.00 0.15 b 0.30 0.50 c 0.08 0.25 D 2.70 3.10 E 1.40 1.80 E1 2.60 3.00 e 0.95 BSC L 0.30 0.60 Revision: 0.1 11/13

Revision History Revision Date Description 0.1 2013.10.09 Initial version. 0.2 2013.11.20 Revise VFB spec to 5% from 3% Revision: 0.1 12/13

Important Notice All rights reserved. No part of this document may be reproduced or duplicated in any form or by any means without the prior permission of ESMT. The contents contained in this document are believed to be accurate at the time of publication. ESMT assumes no responsibility for any error in this document, and reserves the right to change the products or specification in this document without notice. The information contained herein is presented only as a guide or examples for the application of our products. No responsibility is assumed by ESMT for any infringement of patents, copyrights, or other intellectual property rights of third parties which may result from its use. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of ESMT or others. Any semiconductor devices may have inherently a certain rate of failure. To minimize risks associated with customer's application, adequate design and operating safeguards against injury, damage, or loss from such failure, should be provided by the customer when making application designs. ESMT's products are not authorized for use in critical applications such as, but not limited to, life support devices or system, where failure or abnormal operation may directly affect human lives or cause physical injury or property damage. If products described here are to be used for such kinds of application, purchaser must do its own quality assurance testing appropriate to such applications. Revision: 0.1 13/13