GTJ2 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTJ2 High Power Switching Applications Fast Switching Applications Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 5 khz (reference) High speed: t f =.5 μs (typ.) Low switching loss : E on =. mj (typ.) : E off =. mj (typ.) Low saturation voltage: V CE (sat) = 2. V (typ.) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-emitter voltage V CES 6 V Gate-emitter voltage V GES ±2 V Collector current Emitter-collector forward current Collector power dissipation () DC I C ms I CP 6 DC I F ms I FM 6 P C 7 W Junction temperature T j 5 C A A JEDEC JEITA TOSHIBA 2-6CC Weight:.6 g (typ.) Storage temperature range T stg 55 to 5 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance (IGBT) R th (j-c).75 C/W Thermal resistance (diode) R th (j-c).9 C/W Equivalent Circuit Marking Collector Gate TOSHIBA GTJ2 Part No. (or abbreviation code) Lot No. Emitter A line indicates lead (Pb)-free package or lead (Pb)-free finish. 26--
GTJ2 Electrical Characteristics (Ta = 25 C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GES V GE = ±2 V, V CE = ±5 na Collector cut-off current I CES V CE = 6 V, V GE =. ma Gate-emitter cut-off voltage V GE (OFF) I C = ma, V CE = 5 V.5 6.5 V Collector-emitter saturation voltage V CE (sat) I C = A, V GE = 5 V 2. 2.5 V Input capacitance C ies V CE = V, V GE =, f = MHz 65 pf Turn-on delay time t d (on).9 Rise time t r.7 Switching time Switching loss Turn-on time t on Inductive Load.2 Turn-off delay time t d (off) V CC = V, I C = A. Fall time t f V GG = +5 V, R G = 2 Ω.5 Turn-off time t off (Note ). (Note 2) Turn-on switching loss E on. Turn-off switching loss E off. μs mj Peak forward voltage V F I F = A, V GE =. V Reverse recovery time t rr I F = A, di/dt = A/μs 6 ns Note : Switching time measurement circuit and input/output waveforms V GE 9% % V GE R G I C L V CC I C 9% 9% V CE V CE % t d (off) % % t d (on) % t f t r t off t on Note 2: Switching loss measurement waveforms V GE 9% % I C V CE 5% E off E on 2 26--
GTJ2 6 2 I C V CE 5 2 5 9 VGE = V 2 6 2 V CE V GE 6 IC = A Tc = C 2 5 2 6 2 2 6 2 V CE V GE 6 IC = A 2 6 2 V CE V GE 6 IC = A 2 6 2 2 6 2 6 I C V GE V CE (sat) Tc 5 VCE = 5 V 2 25 2 6 2 Collector-emitter saturation voltage VCE (sat) (V) VGE = 5 V 6 2 IC = A 6 2 2 6 Case temperature Tc ( C) 26--
GTJ2 Switching time ton, tr, td (on) (μs)... Switching time t on, t r, t d (on) R G VCC = V VGG = 5 V IC = A (Note ) ton td (on) tr Switching time ton, tr, td (on) (μs)... Switching time t on, t r, t d (on) I C VCC = V VGG = 5 V RG = 2 Ω (Note ) ton td (on) tr. Gate resistance R G (Ω). 5 5 2 25 Collector current I C (A) Switching time toff, tf, td (off) (μs)... Switching time t off, t f, t d (off) R G VCC = V VGG = 5 V IC = A (Note ) toff td (off) tf Switching time toff, tf, td (off) (μs)... toff td (off) tf Switching time t off, t f, t d (off) I C VCC = V VGG = 5 V RG = 2 Ω (Note ).. 5 5 2 25 Gate resistance R G (Ω) Collector current I C (A) Switching loss Eon, Eoff (mj). Switching loss E on, E off R G VCC = V VGG = 5 V IC = A (Note 2) Eoff Eon. Switching loss Eon, Eoff (mj).. Eoff Switching loss E on, E off I C Eon VCC = V VGG = 5 V. RG = 2 Ω (Note 2). 5 5 2 25 Gate resistance R G (Ω) Collector current I C (A) 26--
GTJ2 Capacitance C (pf) C V CE Cies Coes VGE = f = MHz Cres.. 5 RL = Ω 2 V CE, V GE Q G 2 6 2 2 VCE = V 2 6 2 Gate-emitter voltage VGE (V) Gate charge Q G (nc) 6 I F V F t rr, I rr I F Common collector Forward current IF (A) 5 VGE = 2 25.6.2. 2...6 Reverse recovery current Irr (A) Irr trr. Common collector di/dt = A/μs VGE =. 5 5 2 25 Reverse recovery time trr (ns) Forward voltage V F (V) Forward current I F (A) *: Single pulse Curves must be derated linearly. with increase in temperature.. IC max (pulsed)* IC max (continuous) DC operation Safe Operating Area μs* ms* ms* 5 μs*.. Tj 25 C VGE = 5 V RG = 2 Ω Reverse Bias SOA 5 26--
GTJ2 Transient thermal resistance rth (t) ( C/W) r th (t) t w 2 FRD IGBT 2 5 2 2 Pulse width t w (s) 6 26--
GTJ2 RESTRICTIONS ON PRODUCT USE 277-EN The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 26--