TIS73/ TIS73/ N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 4. Absolute Maximum Ratings * T A =2 C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 1 degrees C. 2. These are steady state limits. The factory should be coulted on applicatio involving pulsed or low duty cycle operatio. TO-92 Symbol Parameter alue Units DG Drain-Gate oltage 30 Gate-Source oltage -30 I GF Forward Gate Current ma T J, T STG Operating and Storage Junction Temperature Range - ~ +1 C 1 1. Gate 2. Source 3. Drain Electrical Characteristics T A =2 C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics (BR)S Gate-Source Breakdown oltage I G = 1.0µA, DS = 0-30 I S Gate Reverse Current = 1, DS = 0 = 1, DS = 0, T a = C I D (off) Drain Cutoff Leakage Current DS = 1, = - DS = 1, = -, T a = C (off) Gate-Source Cutoff oltage DS = 1, I D = 4.0nA TIS73 On Characteristics * I DSS Zero-Gate oltage Drain Current * DS = 1, = 0 TIS73 r DS (on) Drain-Source On Resistance DS 0.1, = 0 TIS73 f = 1.0KHz Small Signal Characteristics * Pulse Test: Pulse Width 300µs, Duty Cycle 3.0% -4.0-2.0-2.0 -.0-2.0 -.0 - -6.0 C iss Input Capacitance DS = 0, = -, f = 1.0MHz 18 pf C rss Reverse Trafer Capacitance DS = 0, = -, f = 1.0MHz 8.0 pf Switching Characteristics t r Rise Time (off) = -, (on) = 0, I D = ma, DS = TIS73 3.0 4.0 t on Turn-On Time (off) = -, (on) = 0, I D = ma, DS = 6.0 t off Turn-Off Time (off) = -, (on) = 0, I D = ma, DS = TIS73 2 40 2 na µa na µa ma ma Ω Ω 02 Fairchild Semiconductor Corporation Rev. B, July 02
Thermal Characteristics T A =2 C unless otherwise noted Symbol Parameter Max. Units P D Total Device Dissipation Derate above 2 C 3 2.8 mw mw/ C R θjc Thermal Resistance, Junction to Case 12 C/W R θja Thermal Resistance, Junction to Ambient 37 C/W TIS73/ 02 Fairchild Semiconductor Corporation Rev. B, July 02
Typical Characateristics I - DRAIN CURRENT (ma) DSS 0 0 IDSS @DS=1 PULSE 1 2 3 7 - GATE-SOURCE OLTAGE() rds - DRAIN ON RESISTANCE ( Ω) ON 30 rdson @DS=M =0 1 2 3 7 - GATE-SOURCE OLTAGE() TIS73/ Figure 1. Trafer Characteristics Figure 2. Trafer Characteristics gfs - TRANSCONDUCTANCE (mmho) 30 1 2 3 7 - GATE-SOURCE OLTAGE() gfs @ DS=1 =0 gfs @ DS=1 ID=3mA Cis (Crs) - CAPACITANCE (pf) 0-2 C is ( DS = ) C ( = 0 ) rs DS f = 0.1-1.0MHz -4-6 -8 - -12 - GATE-SOURCE OLTAGE () -14 Figure 3. Trafer Characteristics Figure 4. Capacitance vs oltage I - DRAIN CURRENT (ma) D 80 60 40 = 0-1 -2-3 -4 TYP (OFF) = - 0 0 2 4 6 8 - DRAIN -SOURCE OLTAGE () DS T A = + 2 0 C P - POWER DISSIPATION (mw) D 3 300 2 0 1 TO-92 0 0 2 7 12 1 o TEMPERATURE ( C) Figure. Common Drain-Source Characteristics Figure 6. Power Dissipation vs Ambient Temperature 02 Fairchild Semiconductor Corporation Rev. B, July 02
Package Demeio TO-92 TIS73/ 4.8 +0.2 0.1 3.86MAX 0.46 ±0. 1.27TYP [1.27 ±0.] 1.02 ±0. 0.38 +0. 0.0 1.27TYP [1.27 ±0.] 3.60 ±0. (R2.29) (0.2) 14.47 ±0.40 4.8 ±0. 0.38 +0. 0.0 Dimeio in Millimeters 02 Fairchild Semiconductor Corporation Rev. B, July 02
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