Low Power Audio Amplifier Low Current, High Speed Switching Applications PNP Epitaxial Silicon Transistor 1 TO-126 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T C =25 C unless otherwise noted Symbol Parameter alue Units CBO Collector-Base oltage : MJE170 CEO Collector-Emitter oltage : MJE170 Electrical Characteristics T C =25 C unless otherwise noted - 60-80 - 0 EBO Emitter-Base oltage - 7 I C Collector Current (DC) - 3 A I CP Collector Current (Pulse) - 6 A I B Base Current - 1 A P C Collector Dissipation (T C =25 C) 12.5 W Collector Dissipation (T a =25 C) 1.5 W T J Junction Temperature 150 C T STG Storage Temperature - 65 ~ 150 C Symbol Parameter Test Condition Min. Max. Units B CEO Collector-Emitter Breaksown oltage : MJE170 I CBO Collector Cut-off Current : MJE170 : MJE170-40 - 60-80 I C =, I B = 0-40 -60-80 CB = - 60, I B = 0 CB = - 80, I E = 0 CB = - 0, I E = 0 CB = - 60, I E = 0, @T C = 150 C CB = - 80, I E = 0, @T C = 150 C CB = - 0, I E = 0, @T C = 150 C I EBO Emitter Cut-off Current BE = - 7, I C = 0 h FE DC Current Gain CE = - 1, I C = - 0 CE = - 1, I C = - 500 CE = - 1, I C = - 1.5A CE (sat) Collector-Emitter Saturation oltage I C = - 500, I B = - 50 I C = - 1.5A, I B = - 150 I C = - 3A, I B = - 600 BE (sat) Base-Emitter Saturation oltage I C = - 1.5A, I B = - 150 I C = - 3A, I B = - 600 BE (on) Base-Emitter ON oltage CE = - 1, I C = - 500-1.2 f T Current Gain Bandwidth Product CE = -, I C = - 0 50 MHz C ob Output Capacitance CB = -, I E = 0, f = 0.1MHz 50 pf 50 30 12 250-0.3-0.9-1.7-1.5-2.0
Typical Charactristics hfe, DC CURRENT GAIN 00 0-1 CE = -1 BE(sat), CE(sat)[], SATURATION OLTAGE -2.0-1.8-1.6-1.4-1.2-1.0-0.8-0.6-0.4-0.2 BE(sat) IC/IB= CE(sat) BE@CE= -1 IC/IB= IC/IB=5-0.0-0.01-1 - -0 Figure 1. DC current Gain Figure 2. Base-Emitter Saturation oltage Collector-Emitter Saturation oltage 00 00 f=0.1mhz IE=0 Cob[pF], CAPACITANCE 0 td,tr[ns], TURN ON TIME 0 tr td 1-1 - -0 CB[], COLLECTOR-BASE OLTAGE 1-0.01-1 - Figure 3. Collector Output Capacitance Figure 4. Turn On Time 00 - tf,tstg[ns], TURN OFF TIME 0 tstg tf -1-1 DC 50ms 500µs MJE170 MJE171 MJE172 CEMAX. 0µs -0.01-1 - -0 CE[], COLLECTOR-EMITTER OLTAGE Figure 5. Turn Off Time Figure 6. Safe Operating Area
Typical Characteristics (Continued) P C [W], POWER DISSIPATION 16 14 12 8 6 4 2 0 0 25 50 75 0 125 150 175 Tc[ o C], CASE TEMPERATURE Figure 7. DC current Gain 2001 Fairchild Semiconductor Corporation Rev. A2, June 2001
Package Demensions TO-126 3.90 ±0. 8.00 ±0.30 3.25 ±0.20 ø3.20 ±0. 14.20MAX 11.00 ±0.20 0.75 ±0. (1.00) (0.50) 1.60 ±0. 0.75 ±0. 13.06 ±0.30 16. ±0.20 1.75 ±0.20 2.28TYP [2.28±0.20] #1 2.28TYP [2.28±0.20] 0.50 +0. 0.05 Dimensions in Millimeters
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