500mA LOW NOISE LDO REGULATOR General Description. Features. Applications

General Description The is a 500mA output current fixed voltage regulator which provides low noise, very low dropout voltage (typically 350mV at 500mA), very low standby current ( maximum) and excellent power supply ripple rejection (PSRR 75dB at 00Hz) in battery powered applications, such as handsets and PDAs and in noise sensitive applications, such as RF electronics. The features individual logic compatible enable/shutdown control inputs, a low power shutdown mode for extended battery life, over current protection, over temperature protection, as well as reversed-battery protection. The has 2.5V, 3.0V and 3.3V versions. The is available in TO-252-2 (), TO-252-2 (3), SOIC-8 and SOT-223 packages. Features Up to 500mA Output Current Low Standby Current Low Dropout Voltage: V DROP =350mV at 500mA High Output Accuracy: ±% Good Ripple Rejection Ability: 75dB at 00Hz and I OUT =00 Tight Load and Line Regulation Low Temperature Coefficient Over Current Protection Thermal Protection Reversed-battery Protection Logic-controlled Enable Applications Laptop, Notebook, and Palmtop Computer CD-ROM, CD-R/RW, DVD Driver Portable Electronic PC Peripheral TO-252-2 () TO-252-2 (3) SOIC-8 SOT-223 Figure. Package Types of

Pin Configuration (TO-252-2 ()) D Package (TO-252-2 (3)) 3 VOUT 3 VOUT 2 GND 2 GND VIN VIN H Package (SOT-223) M Package (SOIC-8) 3 VIN EN 8 GND 2 VOUT VIN VOUT 2 3 7 6 GND GND GND BYP 4 5 GND Figure 2. Pin Configuration of (Top View) Pin Description TO-252-2 ()/ TO-252-2 (3) Pin Number SOIC-8 SOT-223 Pin Name Function 3 3 2 VOUT Regulated output voltage 2 5, 6, 7, 8 GND Ground 2 3 VIN Input Voltage EN Enable input: CMOS or TTL compatible input. Logic high=enable, logic low=shutdown 4 BYP Bypass capacitor for low noise operation 2

Functional Block Diagram (2) (3) 3 (3) (2) V IN V OUT BYP (4) + EN () - Current Limit Thermal Shutdown Bandgap Ref. 2 (5, 6, 7, 8) () A (B) (C) A for TO-252-2 ()/(3) B for SOIC-8 C for SOT-223 GND Figure 3. Functional Block Diagram of 3

Ordering Information Circuit Type - Package D: TO-252-2 ()/TO-252-2 (3) M: SOIC-8 H: SOT-223 E: Lead Free G: Green TR: Tape and Reel Blank: Tube 2.5: Fixed Output 2.5V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V Package TO-252-2 ()/ TO-252-2 (3) SOIC-8 SOT-223 Temperature Range -40 to 25 o C -40 to 25 o C -40 to 25 o C Part Number Marking ID Lead Free Green Lead Free Green Packing Type D-2.5E D-2.5G D-2.5E D-2.5G Tube D-2.5TRE D-2.5TRG D-2.5E D-2.5G Tape & Reel D-3.0E D-3.0G D-3.0E D-3.0G Tube D-3.0TRE D-3.0TRG D-3.0E D-3.0G Tape & Reel D-3.3E D-3.3G D-3.3E D-3.3G Tube D-3.3TRE D-3.3TRG D-3.3E D-3.3G Tape & Reel M-2.5E M-2.5G 223M-2.5E 223M-2.5G Tube M-2.5TRE M-2.5TRG 223M-2.5E 223M-2.5G Tape & Reel M-3.0E M-3.0G 223M-3.0E 223M-3.0G Tube M-3.0TRE M-3.0TRG 223M-3.0E 223M-3.0G Tape & Reel M-3.3E M-3.3G 223M-3.3E 223M-3.3G Tube M-3.3TRE M-3.3TRG 223M-3.3E 223M-3.3G Tape & Reel H-2.5TRE H-2.5TRG EH3C GH3C Tape & Reel H-3.0TRE H-3.0TRG EH3E GH3E Tape & Reel H-3.3TRE H-3.3TRG EH3F GH3F Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E" suffix in the part number, are RoHS compliant. Products with "G" suffix are available in green packages. 4

Absolute Maximum Ratings (Note ) Parameter Symbol Value Unit Supply Input Voltage V IN 20 V Enable Input Voltage V EN 20 V Power Dissipation P D Internally Limited (Thermal Protection) W Lead Temperature (Soldering, 0sec) T LEAD 260 o C Junction Temperature T J 50 o C Storage Temperature T STG -65 to 50 o C ESD (Machine Model) ESD 300 V Thermal Resistance (No Heatsink) θ JA TO-252-2 ()/TO-252-2 (3) 90 SOIC-8 60 o C/W SOT-223 08 Note : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Supply Input Voltage V IN 2.5 8 V Enable Input Voltage V EN 0 8 V Operating Junction Temperature T J -40 25 o C 5

Electrical Characteristics -2.5 Electrical Characteristics V IN =3.5V, I OUT =00, C IN =.0μF, C OUT =2.2μF, V EN 2.0V, T J =25 o C, Bold typeface applies over -40 o C T J 25 o C (Note 2), unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit Variation from specified - Output Voltage Accuracy ΔV OUT /V OUT % V OUT -2 2 Output Voltage ΔV OUT /ΔT 20 μv/ o C Temperature Coefficient (Note 3) (ΔV OUT /V OUT )/ΔT 48 ppm/ o C Line Regulation V RLINE V IN =3.5V to 3.2V.5 4.5 2 Load Regulation 7 V (Note 4) RLOAD I OUT =0.mA to 500mA 7 I OUT =00 5 50 70 I OUT =50mA 0 50 230 I OUT =00mA 40 250 Dropout Voltage (Note 5) V DROP 300 I OUT =50mA 65 275 350 I OUT =300mA 250 400 500 I OUT =500mA 350 600 700 Standby Current I STD V EN 0.4V (shutdown) 0.0 V EN 0.8V (shutdown) 5 V EN 2.0V, I OUT =00 00 50 80 V EN 2.0V, I OUT =50mA 350 600 800 Ground Pin Current.3.9 I (Note 6) GND V EN 2.0V, I OUT =50mA 2.5 V EN 2.0V, I OUT =300mA 4 0 5 V EN 2.0V, I OUT =500mA 20 28 mv mv mv ma 6

Electrical Characteristics (Continued) -2.5 Electrical Characteristics V IN =3.5V, I OUT =00, C IN =.0μF, C OUT =2.2μF, V EN 2.0V, T J =25 o C, Bold typeface applies over -40 o C T J 25 o C (Note 2), unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit Ripple Rejection PSRR f=00hz, I OUT =00 75 db Current Limit I LIMIT V OUT =0V 700 000 ma I Output Noise e OUT =50mA, C OUT =2.2μF, no 260 00pF from BYP to GND nv / Hz Enable Input Logic-low 0.4 V Voltage IL Regulator shutdown 0.8 V Enable Input Logic-high Voltage V IH Regulator enabled 2.0 V Enable Input Logic-low Current I IL V IL 0.4V 0.0 V IL 0.8V 2 Enable Input Logic-high Current I IH V IL 2.0V 5 20 V IL 2.0V 25 Thermal Resistance θ JC SOIC-8 45 o C/W TO-252-2 ()/TO-252-2 (3) 20 SOT-223 3 Note 2: Specifications in bold type are limited to -40 o C T J 25 o C. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops % (T J =25 o C) or 2% (- 40 o C T J 25 o C) below its nominal value measured at V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the 7

Electrical Characteristics (Continued) -3.0 Electrical Characteristics V IN =4V, I OUT =00, C IN =.0μF, C OUT =2.2μF, V EN 2.0V, T J =25 o C, Bold typeface applies over -40 o C T J 25 o C (Note 2), unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit Ripple Rejection PSRR f=00hz, I OUT =00 75 db Current Limit I LIMIT V OUT =0V 700 000 ma I Output Noise e OUT =50mA, C OUT =2.2μF, no 260 00pF from BYP to GND nv / Hz Enable Input Logic-low 0.4 V Voltage IL Regulator shutdown 0.8 V Enable Input Logic-high Voltage V IH Regulator enabled 2.0 V Enable Input Logic-low Current I IL V IL 0.4V 0.0 V IL 0.8V 2 Enable Input Logic-high Current I IH V IL 2.0V 5 20 V IL 2.0V 25 Thermal Resistance θ JC SOIC-8 45 o C/W TO-252-2 ()/TO-252-2 (3) 20 SOT-223 3 Note 2: Specifications in bold type are limited to -40 o C T J 25 o C. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops % (T J =25 o C) or 2% (- 40 o C T J 25 o C) below its nominal value measured at V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. 9

Electrical Characteristics (Continued) -3.3 Electrical Characteristics V IN =4.3V, I OUT =00, C IN =.0μF, C OUT =2.2μF, V EN 2.0V, T J =25 o C, Bold typeface applies over -40 o C T J 25 o C (Note 2), unless otherwise specified. Parameter Symbol Conditions Min Typ Max Unit Ripple Rejection PSRR f=00hz, I OUT =00 75 db Current Limit I LIMIT V OUT =0V 700 000 ma I Output Noise e OUT =50mA, C OUT =2.2μF, no 260 00pF from BYP to GND nv / Hz Enable Input Logic-low 0.4 V Voltage IL Regulator shutdown 0.8 V Enable Input Logic-high Voltage V IH Regulator enabled 2.0 V Enable Input Logic-low Current I IL V IL 0.4V 0.0 V IL 0.8V 2 Enable Input Logic-high Current I IH V IL 2.0V 5 20 V IL 2.0V 25 Thermal Resistance θ JC SOIC-8 45 o C/W TO-252-2 ()/TO-252-2 (3) 20 SOT-223 3 Note 2: Specifications in bold type are limited to -40 o C T J 25 o C. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.mA to 500mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops % (T J =25 o C) or 2% (- 40 o C T J 25 o C) below its nominal value measured at V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current.

Typical Performance Characteristics Output Voltage (V) 2.502 2.500 2.498 2.496 2.494 2.492 2.490 2.488 2.486-2.5 V IN =3.5V, I OUT =0mA C IN =μf, C OUT =2.2μF 2.484-60 -40-20 0 20 40 60 80 00 20 40 Dropout Voltage (mv) 850 800 750 700 650 600 550 500 450 400 350 300 250 200 50 00 I OUT =50mA I OUT =00mA I OUT =50mA I OUT =300mA I OUT =500mA C IN =μf, C OUT =2.2μF 50-60 -40-20 0 20 40 60 80 00 20 40 Junction Temperature ( o C) Junction Temperature ( o C) Figure 4. Output Voltage vs. Junction Temperature Figure 5. Dropout Voltage vs. Junction Temperature 0 20 Ground Pin Current (ma) 9 8 7 6 5 4 3 2 T A =25 o C C IN =μf, C OUT =2.2μF Ground Pin Current (ma) 8 6 4 2 0 8 6 4-2.5 V IN =3.5V, C IN =μf, C OUT =2.2μF I OUT =50mA I OUT =00mA I OUT =50mA I OUT =300mA I OUT =500mA 2 0 0 00 200 300 400 500 Output Current (ma) 0-60 -40-20 0 20 40 60 80 00 20 40 Junction Temperature ( 0 C) Figure 6. Ground Pin Current vs. Output Current Figure 7. Ground Pin Current vs. Junction Temperature 2

Typical Performance Characteristics (Continued) Enable Current () 3 2 0 9 8 7 6 5 4 3-2.5, V IN =3.5V C IN =μf, C OUT =2.2μF, I OUT =00 V EN =.8V V EN =2V V EN =3V V EN =3.7V 2-60 -40-20 0 20 40 60 80 00 20 40 Junction Temperature ( o C) Enable Voltage (V).8.7.6.5.4.3.2..0 0.9 0.8 0.7 0.6 V EN =logic high V EN =logic low 0.5-60 -40-20 0 20 40 60 80 00 20 40 Junction Temperature ( o C) -2.5 C IN =μf, C OUT =2.2μF I OUT =00, V IN =3.5V Figure 8. Enable Current vs. Junction Temperature Figure 9. Enable Voltage vs. Junction Temperature Output Noise ( μv/ Hz ) 00 0 0. 0.0 0.00-2.5 I OUT =0mA, C IN =μf, C OUT =2.2μF V IN =3.5V, C BYP =00pF 0.000 0 00 k 0k 00k M 0M Frequency (Hz) ΔV OUT (0mV/Div) V IN (V/Div) 5.5 4.5 3.5 2.5 0 0-0 -20-2.5 Time (200μs/Div) Figure 0. Output Noise vs. Frequency Figure. Line Transient (Conditions: V IN =3.4 to 4.4V, V EN =2V, I OUT =00, C BYP =00pF, C OUT =2.2μF) 3

Typical Performance Characteristics (Continued) I OUT (0.5A/Div) 0.5 0-0.5 0mA -2.5 V EN (V/Div) 3 2 0-2.5 ΔV OUT (0mV/Div) 0-0 -20-30 V OUT (V/Div) 2 0 - Time (200μs/Div) Time (40μs/Div) Figure 2. Load Transient (Conditions: V IN =3.5V, C BYP =00pF, V EN =2V, I OUT =0 to 500mA, C IN =μf, C OUT =2.2μF) Figure 3. V EN vs. V OUT (Conditions: V EN =0 to 2V, V IN =3.5V, I OUT =30mA, C BYP =open, C IN =μf, C OUT =2.2μF) 00.4 PSRR (db) 90 80 70 60 50 40 30-2.5 V IN =3.5V, V RIPPLE =V PP I OUT =0mA, C OUT =2.2μF Power Dissipation (W).2.0 0.8 0.6 0.4 TO-252-2()/(3) Package No Heatsink 20 0 0.2 0 0 00 k 0k 00k M Frequency (Hz) 0.0 25 50 75 00 25 50 Ambient Temperature ( o C) Figure 4. PSRR vs. Frequency Figure 5. Power Dissipation vs. Ambient Temperature 4

Typical Performance Characteristics (Continued).4 000.2 SOIC-8 Package No Heatsink 00 C OUT =μf No Bypass Capacitor Power Dissipation (W).0 0.8 0.6 0.4 ESR (Ω) 0 Stable Area 0.2 0. 0.0 25 50 75 00 25 50 Ambient Temperature ( o C) 0.0 0 50 00 50 200 250 300 350 400 450 500 Output Current (ma) Figure 6. Power Dissipation vs. Ambient Temperature Figure 7. ESR vs. Output Current 000 000 00 C OUT =2.2μF No Bypass Capacitor 00 C OUT =4.7μF No Bypass Capacitor ESR (Ω) 0 Stable Area ESR (Ω) 0 Stable Area 0. 0. 0.0 0 50 00 50 200 250 300 350 400 450 500 Output Current (ma) 0.0 0 50 00 50 200 250 300 350 400 450 500 Output Current (ma) Figure 8. ESR vs. Output Current Figure 9. ESR vs. Output Current 5

Typical Application V IN =3.5V -2.5 V OUT =2.5V V IN V IN V OUT V OUT EN C IN μf GND BYP C OUT 2.2μF C BYP 00pF Figure 20. Typical Application of (Note 7) Note 7: Dropout voltage is 350mV when T A =25 o C. In order to obtain a normal output voltage, V OUT +0.35V is the minimum input voltage which will results a low PSRR, imposing a bad influence on system. Therefore, the recommended input voltage is V OUT +V to 8V. For -2.5 version, its input voltage can be set from 3.5V(V OUT +V) to 8V. 6

Application Information Input Capacitor A μf minimum capacitor is recommended to be placed between V IN and GND. Output Capacitor It is required to prevent oscillation. μf minimum is recommended when C BYP is unused. 2.2μF minimum is recommended when C BYP is 00pF. The output capacitor may be increased to improve transient response. Noise Bypass Capacitor Bypass capacitor is connected to the internal voltage reference. A small capacitor connected from BYP to GND make this reference quiet, resulting in a significant reduction in output noise, but the ESR stable area will be narrowed. In order to keep the output stability, it is recommended to use the bypass capacitor no more than 00pF. The start-up speed of the is inversely proportional to the value of reference bypass capacitor. In some cases, if output noise is not a major concern and rapid turn-on is necessary, omit C BYP and leave BYP open. Power Dissipation Thermal shutdown may take place if exceeding the maximum power dissipation in application. Under all possible operating conditions, the junction temperature must be within the range specified under absolute maximum ratings to avoid thermal shutdown. To determine if the power dissipated in the regulator reaches the maximum power dissipation (see figure 6, 7), using: T J = P D *θ JA + T A P D =(V IN -V OUT )*I OUT +V IN *I GND Where: T J T J(max), T J(max) is absolute maximum ratings for the junction temperature; V IN *I GND can be ignored due to its small value. T J(max) is 50 o C, θ JA is 90 o C/W for TO-252-2 ()/ TO-252-2 (3) package and 60 o C/W for SOIC-8 package. Example: For 2.5V version packaged in SOIC-8, I OUT =500mA, T A =50 o C, V IN(Max) is: (50 o C-50 o C)/(0.5A*60 o C/W)+2.5V=3.75V Therefore, for good performance, please make sure that input voltage is less than 3.75V without heatsink when T A =50 o C. 7

Mechanical Dimensions TO-252-2 () Unit: mm(inch).350(0.053).650(0.065) 6.450(0.254) 6.650(0.262) 5.200(0.205) 5.400(0.23) 0.450(0.08) 0.580(0.023) 2.200(0.087) 2.400(0.094) 4.300(0.69) 5.400(0.23) 9.500(0.374) 9.900(0.390) 0.600(0.024) 0.900(0.035) 2.300TYP 4.500(0.77) 4.700(0.85) 0.000(0.000) 0.27(0.005) 5 5 0.700(0.028) 0.900(0.035) 0.500(0.020) 0.700(0.028).400(0.055).780(0.070) 3 4 8 0.450(0.08) 0.580(0.023) 5.450(0.25) 6.250(0.246) 2.550(0.00) 2.900(0.4) 3.800REF(0.50REF) 4.800(0.89) 6.500(0.256) 8

Mechanical Dimensions (Continued) TO-252-2 (3) Unit: mm(inch) 6.000(0.236) 6.200(0.244) 0.900(0.035).250(0.049).800REF 0.720(0.028) 0.900(0. 035) 2.286(0.090) BSC 6.500(0.256) 6.700(0.264) 5.30(0.202) 5.460(0.25) 5 9 0.50(0.006) 0.750(0.030).29±0. Option 0.720(0.028) 0.850(0.033) 0.600(0.024).000(0.039) 4.700REF 5.250REF 9.800(0.386) 0.400(0.409) 2.900REF 0 8.400(0.055).700(0.067) 0 8 0.470(0.09) 0.600(0.024) 5 9 0.900(0.035).00(0.043) 3 7 2.200(0.087) 2.380(0.094) Option 2 9

Mechanical Dimensions (Continued) SOIC-8 Unit: mm(inch) 7 4.700(0.85) 5.00(0.20).350(0.053).750(0.069) 0.320(0.03) 8.000(0.039) 7.270(0.050) TYP 0.00(0.004) 0.300(0.02) R0.50(0.006) 0.675(0.027) 0.725(0.029) D 0 8 D 20: 8 5.800(0.228) 6.200(0.244) φ 0.800(0.03) 0.200(0.008) φ 3.800(0.50) 4.000(0.57) 0.330(0.03) 0.50(0.020) 0.90(0.007) 0.250(0.00) 0.900(0.035) 5 0.450(0.07) 0.800(0.03) R0.50(0.006) Note: Eject hole, oriented hole and mold mark is optional. 20

Mechanical Dimensions (Continued) SOT-223 Unit: mm(inch) 6.300(0.248) 6.700(0.264) 2.900(0.4) 3.00(0.22) 0.900(0.035) MIN 0.250(0.00) 0.350(0.04) 6.700(0.264) 7.300(0.287) 3.300(0.30) 3.700(0.46) 0.250(0.00).750(0.069) TYP 2.300(0.09) 0.60(0.024) TYP 4.500(0.77) 0.80(0.032) 0 0 4.700(0.85) 0.020(0.00) 0.00(0.004).500(0.059).700(0.067).520(0.060).800(0.07) 2

http://www.bcdsemi.com IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD - Headquarters Semiconductor Manufacturing Limited - Wafer BCD FabSemiconductor Manufacturing Limited BCD - Wafer Semiconductor Fab Manufacturing Limited Shanghai - IC Design SIM-BCD Group Semiconductor Manufacturing Co., Ltd. No. Shanghai 600, Zi SIM-BCD Xing Road, Semiconductor Shanghai ZiZhu Manufacturing Science-based Limited Industrial Park, 20024, China 800 Yi Advanced Shan Road, Analog Shanghai Circuits 200233, (Shanghai) China Corporation Tel: 800, +86-2-2462266, Yi Shan Road, Shanghai Fax: +86-2-2462277 200233, China Tel: +86-2-6485 8F, Zone B, 900, 49, Yi Fax: Shan +86-2-5450 Road, Shanghai 0008200233, China Tel: +86-2-6485 49, Fax: +86-2-5450 0008 Tel: +86-2-6495 9539, Fax: +86-2-6485 9673 REGIONAL SALES OFFICE REGIONAL Shenzhen OfficeSALES OFFICE Shenzhen Shanghai SIM-BCD Office Semiconductor Manufacturing Co., Ltd., Shenzhen Office Shanghai Unit A Room SIM-BCD 203, Skyworth Semiconductor Bldg., Gaoxin Manufacturing Ave..S., Nanshan Co., Ltd. District, Shenzhen Shenzhen, Office Advanced China Analog Circuits (Shanghai) Corporation Shenzhen Office Taiwan Office BCD Taiwan Semiconductor Office (Taiwan) Company Limited 4F, 298-, BCD Rui Semiconductor Guang Road, (Taiwan) Nei-Hu District, Company Taipei, Limited Taiwan 4F, 298-, Rui Guang Road, Nei-Hu District, Taipei, USA Office USA BCD Office Semiconductor Corp. BCD 30920 Semiconductor Huntwood Ave. Corporation Hayward, 30920 CA 94544, Huntwood USA Ave. Hayward, Room Tel: +86-755-8826 E, 5F, Noble 795 Center, No.006, 3rd Fuzhong Road, Futian District, Shenzhen 58026, China Tel: +886-2-2656 Taiwan 2808 CA Tel : 94544, +-50-324-2988 U.S.A Tel: Fax: +86-755-8826 795 7865 Fax: +86-755-8826 7865 Fax: +886-2-2656 Tel: +886-2-2656 28062808 Fax: +886-2-2656 2806 Tel Fax: : +-50-324-2988 +-50-324-2788 Fax: +-50-324-2788