MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant BASE COLLECTOR EMITTER MAXIMUM RATINGS Rating Symbol 648LT 649LT Unit CollectorEmitter Voltage V CEO 5 45 CollectorBase Voltage V CBO 6 55 EmitterBase Voltage V EBO 6. Collector Current Continuous I C madc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Symbol Value Unit Total Device Dissipation FR 5 Board (Note ) T A = 5 C Derate above 5 C P D 5.8 mw mw/ C Thermal Resistance, JunctiontoAmbient Total Device Dissipation Alumina Substrate, (Note ) T A = 5 C Derate above 5 C Thermal Resistance, JunctiontoAmbient R JA 556 C/W P D.4 mw mw/ C R JA 47 C/W Junction and Storage Temperature T J, T stg 55 to +5 C. FR5 =.75.6 in.. Alumina =.4..4 in. 99.5% alumina. SOT (TO6) CASE 8 STYLE 6 MARKING DIAGRAM ORDERING INFORMATION Device Package Shipping MMBT648LTG MMBT649LTG XXX M XXX = Specific Device Code MMBT648LT KM NSV/MMBT649LT ML M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. SOT (PbFree) SOT (PbFree) Tape & Tape & NSVMMBT649LTG SOT (PbFree) Tape & For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Packaging Specifications Brochure, BRD8/D. Semiconductor Components Industries, LLC, August, Rev. 6 Publication Order Number: MMBT648LT/D
ELECTRICAL CHARACTERISTICS (T A = 5 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I C = dc, I B = ) MMBT648 (I C = dc, I B = ) CollectorBase Breakdown Voltage (I C =. madc, I E = ) MMBT648 (I C =. madc, I E = ) Collector Cutoff Current (V CE = ) V (BR)CEO 5 45 V (BR)CBO 6 55 I CES. Collector Cutoff Current (V CB =, I E = ) Emitter Cutoff Current (V EB =, I C = ) I CBO. I EBO. ON CHARACTERISTICS DC Current Gain (I C =. madc, V CE = ) MMBT648 h FE (I C =. madc, V CE = ) MMBT648 65 (I C = dc, V CE = ) MMBT648 (I C = madc, V CE = ) MMBT648 CollectorEmitter Saturation Voltage (I C = madc, I B =.5 madc) (I C = madc, I B = madc) BaseEmitter On Voltage (I C = dc, V CE = madc) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = dc, V CE =, f = MHz) Output Capacitance (V CB =, I E =, f = MHz) Input Capacitance (V EB =.5, I C =, f = MHz) V CE(sat).6 V BE(on).56.66 f T 7 C obo C ibo 8. MHz pf pf R S i n e n IDEAL TRANSISTOR Figure. Transistor Noise Model
NOISE CHARACTERISTICS (V CE =, T A = 5 C) NOISE VOLTAGE en, NOISE VOLTAGE (nv) ma I C = ma R S en, NOISE VOLTAGE (nv) R S f = Hz khz Hz khz A 5 k k 5 k k k 5 k k f, FREQUENCY (Hz) Figure. Effects of Frequency khz...5..5 Figure. Effects of Collector Current In, NOISE CURRENT (pa).7.5. I C = ma ma A A R S A A. 5 k k 5 k k k 5 k k f, FREQUENCY (Hz) NF, NOISE FIGURE (db) 6 8. BANDWIDTH = Hz to 5.7 khz A A A I C = 5 k k 5 k k k 5 k k Figure 4. Noise Current Figure 5. Wideband Noise Figure VT, TOTAL NOISE VOLTAGE (nv) 7 5 A A ma I C = ma 5 k k 5 k k k 5 k k A Hz NOISE DATA A NF, NOISE FIGURE (db) 6 8. I C = ma ma A A A A 5 k k 5 k k k 5 k k Figure 6. Total Noise Voltage Figure 7. Noise Figure
h FE, DC CURRENT GAIN (NORMALIZED).7.5.4.. V CE = V.. T A = 5 C 5 C - 55 C.5...5 Figure 8. DC Current Gain V, VOLTAGE (VOLTS).8.6.4. V BE @ V CE = V V CE(sat) @ I C /I B =..5..5 5 R θ VBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mv/ C) -.4 -.8 -. -.6 - -.4...5..5 5 to 5 C - 55 C to 5 C Figure 9. On Voltages Figure. Temperature Coefficients C, CAPACITANCE (pf) 8. 6. C ob C eb C ib C cb.8..5 5 V R, REVERSE VOLTAGE (VOLTS) ft, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) V 7 CE = V 5 5 7 Figure. Capacitance Figure. CurrentGain Bandwidth Product 4
PACKAGE DIMENSIONS SOT (TO6) CASE 88 ISSUE AP A E A D e b HE SEE VIEW C L L VIEW C c 5 NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING DIMENSION: INCH.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A.89..5.4.44 A..6....4 b.7.44.5.5.8. c.9..8..5.7 D.8.9 4..4. E...4.47.5.55 e.78.9 4.7.75.8 L....4.8. L.5.54.69.4..9 H E..4.64.8.94.4 STYLE 6: PIN. BASE. EMITTER. COLLECTOR.95.7 SOLDERING FOOTPRINT.95.7.79.9.5.8. SCALE : mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patentmarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 87 USA Phone: 67575 or 84486 Toll Free USA/Canada Fax: 67576 or 844867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 79 9 Japan Customer Focus Center Phone: 85875 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT648LT/D