Load Switch with Level-Shift Si8DDL Marking Code: VD SOT-33 SC-7 ( leads) S 2 ON/OFF R, C Top View PRODUCT SUMMARY V DS (V) 2 R DS(on) ( ) at V IN =. V.2 R DS(on) ( ) at V IN = 2. V.3 R DS(on) ( ) at V IN =.8 V.8 I D (A) ±. Configuration Level-shift APPLICATION CIRCUITS Si8DDL 2 D 2 3 D 2 FEATURES Low R DS(on) TrenchFET.8 V to 2 V input. V to 8 V logic level control Low profile, small footprint SC-7- package 2 V ESD protection on input switch, V ON/OFF Adjustable slew-rate Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 APPLICATIONS Load switch with level-shift Slew-rate control Portable / consumer devices DESCRIPTION The Si8DDL includes a p- and n-channel MOSFET in a single SC-7- package. The low on-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as. V. The Si8DDL operates on supply lines from.8 V to 2 V, and can drive loads up to. A. V IN R Q2 2, 3 C V OUT. C i = µf ON/OFF Q C o LOAD 7 3. C i GND 2 8 Switching Variation at V IN = 2. V, R = 2 k COMPONENTS R Pull-up resistor Typical k to M a Optional slew-rate control Typical to k a C Optional slew-rate control Typical pf Note a. Minimum R value should be at least x to ensure Q turn-on The Si8DDL is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so thaise-times can be tailored to different load types. S3-28-Rev. B, 23-Dec-3 Document Number: 2888 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Si8DDL FUNCTIONAL BLOCK DIAGRAM Si8DDL S2 Q2 2, 3 D2 R, C ON/OFF Q ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SC-7 Si8DDL-T-GE3 ABSOLUTE MAXIMUM RATINGS (T A = 2 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Input voltage V IN (V DS2 ) 2 V On/off voltage V ON/OFF 8 Load current Continuous a, b ±. I L Pulsed b, c ± A Continuous intrinsic diode conduction a I S -.3 Maximum power dissipation a P D.37 W Operating junction and storage temperature range T J, T stg - to C ESD rating, MIL-STD-883D human body model ( pf, ) ESD 2 kv THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient (continuous current) a R thja 29 3 C/W Maximum junction-to-foot (Q2) R thjf 2 3 SPECIFICATIONS (T J = 2 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Off Characteristics Reverse leakage current I FL V IN = 2 V, V ON/OFF = V - - μa Diode forward voltage V SD I S = -.8 A - -.8 -.2 V On Characteristics Input voltage range V IN.8-2 V On-resistance (p-channel) R DS(on) V ON/OFF =. V, V IN = 2. V, I D =.9 A -.2.3 V ON/OFF =. V, V IN =. V, I D =. A -..2 V ON/OFF =. V, V IN =.8 V, I D =.2 A -.37.8 On-state (p-channel) drain-current I D(on) Notes a. Surface mounted on FR board b. V IN = 2 V, V ON/OFF = 8 V, T A = 2 C c. Pulse test: pulse width 3 μs, duty cycle 2 % V IN-OUT.2 V, V IN = V, V ON/OFF =. V - - V IN-OUT.3 V, V IN = 3 V, V ON/OFF =. V - - Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S3-28-Rev. B, 23-Dec-3 2 Document Number: 2888 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9 A
Si8DDL TYPICAL CHARACTERISTICS (2 C, unless otherwise noted) V GS = V thru 3 V V GS =2.V.8 V ON/OFF =. V to 8 V T J = 2 o C I D - Drain Current (A) 3 2 V GS =2V V GS =.8V..9 V GS =. V. T J = 2 o C.. 2 V DS - Drain-to-Source Voltage (V).. 3. I L (A) Output Characteristics V DROP vs. I L at V IN =. V...2 V ON/OFF =. V to 8 V T J = 2 o C. V ON/OFF =. V to 8 V T J = 2 o C.9..3.2.3 T J = 2 o C. T J = 2 o C...2.8 2. 3..2...8 I L (A) I L (A) V DROP vs. I L at V IN = 2. V V DROP vs. I L at V IN =.8 V..3.2. V ON/OFF =. V to 8 V T J = 2 C T J = 2 C R DS(on) - On-Resistance (Normalized).8...2..8 V ON/OFF =. V to 8 V V GS = 2. V V GS =. V V GS =.8 V 2 8 V IN - (V) V DROP vs. V IN at. - - 2 2 7 2 T J - Junction Temperature ( C) Normalized On-Resistance vs. Junction Temperature S3-28-Rev. B, 23-Dec-3 3 Document Number: 2888 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Si8DDL TYPICAL CHARACTERISTICS (2 C, unless otherwise noted). V ON/OFF =. V to 8 V R DS(on) - On-Resistance (Ω).3.2. T J = 2 C T J = 2 C I S - Source Current (A) T J = C T J = 2 C 2 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Input Voltage...2...8..2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 8 3. C i = µf. C i = µf 9 7. 3. 2 8 2 8 Switching Variation at V IN =. V, R = 2 k Switching Variation at V IN = 2. V, R = 2 k 2 C i = µf 2 9 C i = µf 3 2 8 2 8 Switching Variation at V IN =.8 V, R = 2 k Switching Variation at V IN =. V, R = 3 k S3-28-Rev. B, 23-Dec-3 Document Number: 2888 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Si8DDL TYPICAL CHARACTERISTICS (2 C, unless otherwise noted) 2 C i = µf 3 28 2 C i = µf 2 8 7 td(on) 2 8 Switching Variation at V IN = 2. V, R = 3 k Switching Variation at V IN =.8 V, R = 3 k Limited by R DS(on) * μs I D - Drain Current (A). ms ms ms T A = 2 C Single Pulse s DC, s BVDSS Limited.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Foot Normalized Effective Transient Thermal Impedance.. Duty Cycle =..2...2 Single Pulse.... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 3 C/W 3. T JM - T A = P DM Z (t) thja maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?2888. S3-28-Rev. B, 23-Dec-3 Document Number: 2888 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9 Notes: P DM. Surface Mounted
Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9