DG2706. High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch. Vishay Siliconix DESCRIPTION FEATURES APPLICATIONS

Similar documents
0.4, Low Resistance and Capacitance, Dual DPDT / Quad SPDT Analog Switch

Low Voltage, Dual SPDT Analog Switch with Charge Pump

Automotive 125 C Analog Switch Dual DPDT / Quad SPDT, 0.37, 338 MHz Bandwidth

Dual SPDT Analog Switch

Low-Voltage Single SPDT Analog Switch

Low-Voltage, Low R ON, SPDT Audio Switch with Negative Swing Capability

Power-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

DG2715, DG2716. Low-Voltage, 0.4 R ON, Single SPST Analog Switch. Vishay Siliconix DESCRIPTION FEATURES BENEFITS APPLICATIONS

0.45, Low Voltage Dual SPDT Analog Switch with Negative Swing Audio Capability

Power-off Isolation, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

0.5 pc Charge Injection, 100 pa Leakage, Dual SPDT Analog Switch

Precision Monolithic Quad SPST CMOS Analog Switches

DG1411E, DG1412E, DG1413E. 1.5 On Resistance, ± 15 V / +12 V / ± 5 V, Quad SPST Switches. Vishay Siliconix.

Low-Voltage Single SPDT Analog Switch

FEATURES BENEFITS APPLICATIONS. PARAMETER LIMIT UNIT Reference to GND V to +6 IN, COM, NC, NO a -0.3 to (V )

0.3 pc Charge Injection, 100 pa Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch

Low-Voltage Single-Supply, SPDT Analog Switch in SC-70

FEATURES APPLICATIONS

DG2535/DG Ω Low-Voltage Dual SPDT Analog Switch. Vishay Siliconix. RoHS COMPLIANT DESCRIPTION FEATURES BENEFITS APPLICATIONS

3.9, 8-Channel / Dual 4-Channel, ± 15 V, +12 V, ± 5 V Precision Multiplexers

FEATURES DG2538, MSOP-10 V+ 1 V+ COM 1. Top View. Temperature Range Package Part Number

Sub-Ω, Low Voltage, SPDT Analog Switches with Over Current Protection

700 MHz, -3 db Bandwidth; Single SPDT Analog Switch

0.39, Low-R ON, Ultra-Low Distortion, Compact DPDT Analog Switch

High-Speed Quad Monolithic SPST CMOS Analog Switch

Precision Monolithic Quad SPST CMOS Analog Switches

DG2307. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer) RoHS COMPLIANT DESCRIPTION FEATURES APPLICATIONS

Precision Quad SPDT Analog Switch

FEATURES DG721, TDFN-8 COM 2 7 IN 1 NO 1 1 NO 2. Top View. Device Marking for MSOP-8: 721

High-Bandwidth, Low Voltage, Dual SPDT Analog Switches

Low Power, High Voltage SPST Analog Switches

Improved Quad CMOS Analog Switches

Dual P-Channel 12-V (D-S) MOSFET

DG3157. High-Speed, Low r ON, SPDT Analog Switch. Vishay Siliconix. (2:1 Multiplexer/Demultiplexer Bus Switch) RoHS* COMPLIANT DESCRIPTION FEATURES

Dual P-Channel 12-V (D-S) MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET

FEATURES APPLICATIONS. Switches are shown for a Logic 0 Input

Dual N-Channel 30 V (D-S) MOSFETs

Dual P-Channel 30 V (D-S) MOSFET

Monolithic Dual SPST CMOS Analog Switch

Dual N-Channel 25 V (D-S) MOSFETs

High-Speed Quad Monolithic SPST CMOS Analog Switch

N- and P-Channel 20-V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET

N-Channel 40 V (D-S) MOSFET

Automotive N-Channel 80 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET

N- and P-Channel 20-V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET

N-Channel 150 V (D-S) MOSFET

Dual N-Channel 12-V (D-S) MOSFET

Automotive N-Channel 40 V (D-S) 175 C MOSFET

P-Channel 8 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET with Schottky Diode

N-Channel 20 V (D-S) MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 80 V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET

P-Channel 20-V (D-S) MOSFET

Automotive P-Channel 200 V (D-S) 175 C MOSFET

N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET

N-Channel 40 V (D-S) 175 C MOSFET

N-Channel 30-V (D-S) MOSFET

N-Channel 40 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

2 Port, USB 2.0 High Speed (480 Mbps) Switch, DPDT Analog Switch

P-Channel 12 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET

P-Channel 100-V (D-S) 175 C MOSFET

Dual N-Channel 30-V (D-S) MOSFET

Automotive N-Channel 40 V (D-S) 175 C MOSFET

N-Channel 30 V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET

Common - Drain Dual N-Channel 30 V (S1-S2) MOSFET

Dual N-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET

Dual P-Channel 30-V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFETs

P-Channel 30 V (D-S) MOSFET

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET

N-Channel 100 V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET

N-Channel 60 V (D-S), MOSFET

Dual N-Channel 20-V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET

P-Channel 12-V (D-S) MOSFET

P-Channel 30-V (D-S), MOSFET

P-Channel 30-V (D-S) MOSFET

Automotive P-Channel 20 V (D-S) 175 C MOSFET

Dual P-Channel 60-V (D-S) 175 MOSFET

Transcription:

High Speed, Low Voltage, 3, Quad SPDT CMOS Analog Switch DESCRIPTION The DG2706 is a high speed, low voltage, low On-resistance, quad SPDT (single pole double throw) analog switch. It operates from a.6 V to 4.3 V single power supply and achieves 3 switch On-resistance. When turned on, each switch conducts equally in both directions. Its switch on resistance flatness is 0.6 and channel to channel matching is of 0.3 when powered with single 3. V supply. All channels guaranteed break before make switching. Control logic input has 0. V to.6 V logic threshold. It features a 90 MHz - 3 db bandwidth, - 90 db crosstalk and - 70 db off-isolation at MHz. The DG2706 is an ideal fit for low voltage battery powered devices switching audio, video, multi-media data streams, and control signals between different functional circuits or ports. The DG2707 comes in a small miniqfn-6 lead package (.8 mm x 2.6 mm x 0.7 mm). As a committed partner to community and the environment, manufactures this product with the lead(pb)-free device terminations and is 0 % RoHS compliant. FEATURES Operation voltage range:.6 V to 4.3 V Guaranteed On-resistance: 3.0 at 3. V Low voltage logic threshold Low crosstalk: - 70 db High off-isolation: - 90 db Ultra small package: miniqfn6 of.8 mm x 2.6 mm APPLICATIONS Dual SIM card switch A/V and analog signal routing Battery operated devices Data acquisition systems Communications systems Medical and ATE equipments FUNCTIONAL BLOCK DIAGRAM AND P CONFIGURATION miniqfn-6l NO4 NC3 2 9 4 3 8 3 NC4 NO 4 VXX 7 6 NO3 NC2 6 2 2 3 4 Pin : LONG LEAD NC 2 NO2 Device Marking: VXX Traceability Code: V is DG2706DN XX = Date/Lot Top View ORDERG FORMATION Temp. Range Package Part Number - 40 C to 8 C miniqfn-6 DG2706DN-T-E4

TRUTH TABLE DG2706 QUAD SPDT, miniqfn-6l Select Input On Switches (Pin ) 2 (Pin 3) Description (Pin) Common (Pin) 0 X NC (Pin ) (Pin 6) X NO (Pin ) 0 X NC4 (Pin 4) 4 (Pin 3) X NO4 (Pin 2) 0 NC2 (Pin 6) X 2 (Pin ) NO2 (Pin 4) 0 NC3 (Pin 9) X 3 (Pin 3) NO3 (Pin 7) ABSOLUTE MAXIMUM RATGS (T A = 2 C, unless otherwise noted) Parameter Limit Unit Reference to - 0.3 to.0,, NC, NO a - 0.3 to ( + 0.3) V Current (Any terminal except NO, NC or ) 30 Continuous Current (NO, NC, or ) ± 20 ma Peak Current (Pulsed at ms, % Duty Cycle) ± 00 Storage Temperature (D Suffix) - 6 to C Thermal Resistance (Package) b miniqfn-6 2 C/W Power Dissipation (Package) b miniqfn-6 c, d 2 mw Notes: a. Signals on NC, NO, or or exceeding will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6.6 mw/ C above 70 C d. Manual soldering with iron is not recommended for leadless components. The miniqfn-6 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. 2

SPECIFICATIONS ( = 3. V) Parameter Symbol Test Conditions Otherwise Unless Specified Temp. b Limits - 40 C to 8 C Min. d Typ. c Max. d Analog Switch Analog Signal Range e V ANALOG R DS(on) Full 0 V On-Resistance R DS(on) = 3. V, I NO/NC = ma, V =.0 V Room 3. Full 6 R ON Match R (ON) = 3. V, I NO/NC = ma, V =.0 V Room 0.3 R ON Resistance Flatness R ON = 3. V, I NO/NC = ma, Room 0.6 Channel Off Leakage Current I NO/NC(off) = 3.6 V, V NO/NC = 0. V/3 V, Room Full - - I (off) V = 3 V/0. V Room - Full - Channel-On Leakage Room - I Current (on) = 3.6 V, V NO/NC, V = 3 V/0. V Full - 20 20 Digital Control Input High Voltage V H Full.6 Input Low Voltage V L Full 0.4 V Input Current I L or I H V = 0 or Full - µa Dynamic Characteristics Break-Before-Make Time t BBM Room Full Room 20 4 Enable Turn-On Time t ON(EN) V NO, V NC =. V, R L = 0, C L = 3 pf Full ns Room 3 Enable Turn-Off Time t OFF(EN) Full 4 Charge Injection d Q J C L = nf, R GEN = 0, V NC/NO = 2 V Room 3 pc Off-Isolation d OIRR Room - 70 = 3. V, f = MHz, R L = 0, C L = pf Crosstalk d, f X TALK Room - 90 db Bandwidth d BW = 3. V, R L = 0, C L = pf, - 3 db Room 90 MHz Total Harmonic Distortion d THD = 3. V, R LOAD = 600 Room 0.02 % N O, N C Off Capacitance d CS NC(off) 6 CS NO(on) = 3. V, f = MHz Room pf Channel-On Capacitance d C (on) 3 Power Supply Power Supply Range.6 4.3 V Power Supply Current I+ V = 0 or Full µa Notes: a. Room = 2 C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. V = input voltage to perform proper function. f. Crosstalk measured between channels. Unit na Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 3

TYPICAL CHARACTERISTICS (T A = 2 C, unless otherwise noted) RON - On-Resistance (Ω) 26 24 22 20 8 6 4 2 8 =.6 V T = 2 C I ON = ma R ON - On-Resistance (Ω) 40 3 30 2 20 =.6 V, I ON = ma + 8 C + 2 C - 40 C 6 4 = 3. V = 3.6 V 2 0 0..0. 2.0 2. 3.0 3. 4.0 V D - Analog Voltage (V) R ON vs. V D and Single Supply Voltage 0 0 0..0. 2.0 V D - Analog Voltage (V) R ON vs. Analog Voltage and Temperature = 3. V, I ON = ma DG2706 R L = 600 Ω V Signal = V RMS R ON - On-Resistance (Ω) 4 3 2 + 8 C + 2 C - 40 C THD (%) 0. 0.0 =.6 V = 3.6 V = 3. V 0 0..0. 2.0 2. 3.0 3. 4.0 V D - Analog Voltage (V) R ON vs. Analog Voltage and Temperature 0 0 00 000 0000 Frequency (Hz) Switching Threshold vs. Supply Voltage = 3.6 V, I ON = ma ma ma R ON - On-Resistance (Ω) 4 3 2-40 C + 8 C + 2 C I+ - Supply Current (A) 0 µa µa µa 0 na na = 3.6 V = 3. V =.6 V na 0 0..0. 2.0 2. 3.0 3. 4.0 V D - Analog Voltage (V) R ON vs. Analog Voltage and Temperature 0 pa 0 K K 0K M M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency 4

TYPICAL CHARACTERISTICS (T A = 2 C, unless otherwise noted) Leakage Currrent (pa) 00 0 = 3. V I NO/NC(off) I (on) I (off) - 60-40 - 20 0 20 40 60 80 0 20 40 Temperature ( C) Leakage Current vs. Temperature Loss, OIRR, X TALK (db) 0 - - 20-30 - 40-0 - 60-70 - 80-90 = 3. V R L = 0 Ω OIRR Loss X TALK - 0 0K M M 0M G Frequency (Hz) Insertion Loss, Off-Isolation Crosstalk vs. Frequency..4 VT - Switching Threshold (V).3.2..0 0.9 0.8 0.7 0.6 0..0. 2.0 2. 3.0 3. 4.0 4..0 - Supply Voltage (V) Switching Threshold vs. Supply Voltage

TEST CIRCUITS Switch Input Logic Input NO or NC Switch Output R L 0 Ω V OUT C L 3 pf Logic Input Switch Output V H V L 0 V 0 % t r t f < ns < ns 0.9 x V OUT 0 V t ON t OFF C L (includes fixture and stray capacitance) ( ) R V OUT = V L R + L R ON Logic "" = Switch on Logic input waveforms inverted for switches that have the opposite logic sense. Figure. Switching Time Logic Input V H t r < ns t f < ns V NO NO V O V L V NC NC R L 0 Ω C L 3 pf V NC = V NO V O 90 % Switch Output 0 V t D t D C L (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V gen + R gen V = 0 - NC or NO V OUT C L = nf V OUT On ΔV OUT Off On Q = ΔV OUT x C L depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection 6

TEST CIRCUITS nf nf NC or NO 0 V, 2.4 V R L 0 V, 2.4 V NC or NO Meter HP492A Impedance Analyzer or Equivalent Analyzer Off Isolation V = 20 log V NO /NC f = MHz Figure 4. Off-Isolation Figure. Channel Off/On Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?68392. 7

Thin miniqfn6 Case Outline Package Information A D B Terminal tip (4) 6 x b 0. 0.0 M M C AB C 2 9 9 2 3 8 8 3 0. C 4 6 7 6 E 7 6 4 6 L 2 3 4 0. C Pin # identifier () x L 4 3 2 e Top view Bottom view C Seating plane Side view A3 A 0. C 0. C DIMENSIONS MILLIMETERS () CHES M. NOM. MAX. M. NOM. MAX. A 0.0 0. 0.60 0.020 0.022 0.024 A 0-0.0 0-0.002 A3 0. ref. 0.006 ref. b 0. 0.20 0.2 0.006 0.008 0.0 D 2.0 2.60 2.70 0.098 0.2 0.6 e 0.40 BSC 0.06 BSC E.70.80.90 0.067 0.07 0.07 L 0.3 0.40 0.4 0.04 0.06 0.08 L 0.4 0.0 0. 0.08 0.020 0.022 N (3) 6 6 Nd (3) 4 4 Ne (3) 4 4 Notes () Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y4.M. - 994. (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between 0. mm and 0.30 mm from terminal tip. () The pin identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max. 0.0 mm. ECN: T6-0226-Rev. B, 09-May-6 DWG: 6023 Revision: 09-May-6 Document Number: 64694 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HERE AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?900

PAD Pattern REMENDED MIMUM PADS FOR MI QFN 6L 0.62 (0.022) 0.400 (0.07) 0.22 (0.0089) 2.900 (0.42) 0.463 (0.082).200 (0.0472) 2.0 (0.0827) Mounting Footprint Dimensions in mm (inch) Document Number: 667 Revision: 0-Mar-

Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 207 VISHAY TERTECHNOLOGY, C. ALL RIGHTS RESERVED Revision: 08-Feb-7 Document Number: 900