ST High Voltage Power MOSFET

ST High Voltage Power MOSFET Maurizio Giudice, Marketing Director Power Transistor Division IMS Group March-2012

Market Trend: High efficiency and Emerging Applications 2 Energy efficiency and costs Growing energy demand Environmental technology and sustainability

HV Power MOSFET RoadMaps

HV Power MOSFETs: voltage range by technology 5 1500V 1200V 1050V 1000V 850V 800V 650V 600V 520V 500V 420V 400V PowerMESH N series SuperMESH NK series NM..FD NM FDmesh MDmesh FDmesh II NM..ND NM N MDmesh II SuperMESH 5 N K5 MDmesh V ST HV Power MOSFETs From 200V up to 1500V Product range SuperMESH3 & SuperMESH 5 1500V Series and SuperMESH BVDSS extension Super-Junction HV MOSFET roadmap Super-Junction MDmesh technologies 300V Package roadmap 200V 1 0.8 0.7 0.5 0.35 0.3 0.2 Normalised RDS(on) x Area March-2012

MDmesh TM V Breakthrough in Power MOSFETs Lowest R DS (on) x Area for Energy Saving and Higher Power Density MDmesh V

MDmesh V: Breakthrough in Power MOSFETs 8 Features Best RDS(on) x area Optimized RDS(on)*Qg Higher V DSS rating Benefits Lowest conduction losses. Increased power density Excellent switching performances Higher efficiency Lower EMI Increased safety margin Photovoltaic, SMPS for Servers, Metering, AC/DC Converters, Adapters, Welding, High-end Lighting, etc

New SuperJunction MOSFET series 12 MDmesh II DIFFERENCES: MORE EFFECTIVE DIFFUSION PROCESS NEW BODY COLUMN STRUCTURE LESS NUMBER OF MULTIDRAIN STEPS MDmesh V - Pitch - Concentration drain n, Ron * Area

MDmesh TM V: Features and Benefits 13 Key features 650 V lowest R DS (on) * Area Higher breakdown voltage MDmesh V targeted for best efficiency in the application Main benefits Higher energy saving Increased power density Increased safety margin STW88N65M5 Max Value T=25 C Main Parameters ST Best Competitor Unit BV DSS Drain to Source breakdown voltage 650 650 V R DS(on) V DS = 10V, I D = 42A/33A 29 37 m MDmesh V Q G V DS = 520V/480V, V GS = 0 10V, I D =42A/50A 204 330 nc March-2012

MDmesh V RDS(on) Benchmark 14 500 450 400 350 300 250 200 150 100 STY139N65M5 17mΩ 650V comp. 37mΩ STW88N65M5 29mΩ 650V comp. 74mΩ STx57N65M5 63mΩ 650V comp. 250mΩ STx18N65M5 220mΩ 50 0 MAX247 TO-247 TO-220/D2PAK DPAK MDmeshV (650V @ 25C`) Competition (650V @ 25C`) March-2012

Evaluation Board: 2kW PFC (Fixed OFF Time) : STEVAL-ISF001V1 Description: 2kW FOT (Fixed OFF time) PFC dedicated to high power applications with a single STW88N65M5 Main Features: Boost converter working in Fixed Toff modality 180-265 Vac input voltage 400V output regulated +/- 5% High Power factor above 0.98 Low THD distortion <10% full power 70kHz maximum switching frequency 17

STW88N65M5 on 2kW PFC vs Competition 20 March-2012

MDmesh V series : The Leading MOSFET 21 Technology Superior switching performances coupled with the lowest onresistance make STW88N65M5 the best in class amongst 650V Power MOSFETs in TO-247 STW88N65M5 vs direct competitor Comparison test result Superior switching performances Better on-resistance Benefits Higher efficiency in the application Lower working temperature MDmesh V Switching Benchmark March-2012

V DS MDmesh TM V: 550V 650V Product range R DS (on) (max) P/N [V] [Ω] [A] Id Package Application 22 0.080 STx36N55M5 29 TO-220 TO-220FP/D 2 PAK SMPS Server 550 0.100 STx32N55M5 25 TO-220 TO-220FP D 2 PAK/I 2 PAK/TO-247 SMPS Server 0.240 STx18N55M5 14 TO-220/TO-220FP/D 2 PAK/DPAK HID,SMPS 0.017 STY139N65M5 130 Max247 PV-Inverter, Server, UPS 0.029 STx88N65M5 84 TO-247 PV-Inverter, Server, UPS 0.045 STW69N65M5 60 TO-247/TO-3P PV-Inverter, Server, UPS 0.059 STx60N65M5 45 TO-247/TO-3PF PV-Inverter, Server SMPS,Telecom 0.063 STx57N65M5 42 TO-220/TO-220FP/D 2 PAK/I 2 PAK/TO-247 PV-Inverter, Server SMPS, Telecom 650 0.078 STx45N65M5 31 TO-220/TO-220FP/D 2 PAK/TO-247 Server SMPS, Telecom 0.110 STx34N65M5 29 TO-220/TO-220FP/D 2 PAK/TO-247 Server SMPS, Telecom 0.148 STx31N65M5 22 TO-220/TO-220FP/D 2 PAK/I 2 PAKFP/TO-247 SMPS Server 0.190 STx20N65M5* 18 TO-220/TO-220FP/I 2 PAKFP/TO-247 SMPS Server 0.220 STx18N65M5 15 TO-220/TO-220FP/D 2 PAK/DPAK u-inverter, SMPS, HID 0.340 STx15N65M5 11 TO-220/TO-220FP/I 2 PAKFP/DPAK u-inverter, HID, SMPS, 0.480 STx11N65M5 9 TO-220/TO-220FP/I 2 PAK/DPAK/IPAK u-inverter, HID, SMPS 1.200 STL3N65M5* 2.5 PowerFLAT TM 3.3 x 3.3 HV Battery chargers, Adapters * Coming soon samples (Q3 12) March-2012

MDmesh TM II Power MOSFETs Low Conduction and Switching Losses for Energy Saving MDmesh II

MDmesh TM II Technology MDmesh TM II Features Extremely low R DS (on) up to 40% R DS (on) reduction Low input capacitance and Q g V th range: 2V<V th <4V Best-in-class in dynamic dv/dt Fast Recovery Diode version (FDmesh TM II) Benefits Extremely low conduction losses Extremely low switching losses: improved system efficiency and smaller heat-sinks Driver losses reduction and driving optimization: higher currents at lower V GS and high noise immunity High avalanche ruggedness

MDmesh II 500V Product range 26 V DS [V] 500 R DS (on) (max) Sales Type Package Status [Ω] 0.790 STx8NM50N DPAK/TO-220/TO-220FP Full Production 0.630 STx10NM50N DPAK/TO-220/TO-220FP Full Production 0.470 STx11NM50N DPAK/TO-220/TO-220FP Full Production 0.320 STx14NM50N D 2 PAK,DPAK/TO-220/TO-220FP Full Production 0.250 STx19NM50N D 2 PAK-TO-247-TO-220/FP Full Production 0.190 STx23NM50N D 2 PAK-TO-247-TO-220/FP Full Production 0.158 STx28NM50N D 2 PAK-TO-247-TO-220/FP Full Production 0.043 STW60NM50N TO-247 (Samples available) Production Q2 2012 0.022 STY105NM50N Max247 (Samples available) Production Q2 2012 March-2012

MDmesh TM II 600V Product range 27 V DS [V] 600 R DS (on) (max) Sales Type Package Status [Ω] 0.900 STx7NM60N DPAK/TO-220/TO-220FP Full Production 0.745 STx9NM60N DPAK/TO-220/TO-220FP Full Production 0.550 STx10NM60N DPAK/TO-220/TO-220FP Full Production 0.600 STx10NM60ND DPAK/TO-220/TO-220FP Full Production 0.360 STx13NM60N DPAK/TO-220/TO-220FP Full Production 0.285 STx18NM60N D 2 PAK-TO-247-TO-220/FP Full Production 0.220 STx22NM60N D 2 PAK-TO-247-TO-220/FP Full Production 0.190 STx24NM60N D 2 PAK-TO-247-TO-220/FP Full Production 0.165 STx26NM60N D 2 PAK-TO-247-TO-220/FP Full Production 0.105 STX34NM60N D 2 PAK-TO-247-TO-220FP Full Production 0.110 STx34NM60ND TO-247-TO-220 Full Production 0.070 STW48NM60N TO-247 Full Production 0.060 STW56NM60N TO-247 Full Production 0.049 STW62NM60N TO-247 Production Q2 2012 0.029 STY100NM60N Max247 Production Q2 2012 March-2012

MDmesh TM II 650V Product range 28 V DS R DS (on) (max) Sales Type Package Status [V] [Ω] 0.410 STx11NM65N TO220/FP/DPAK Production 650 0.350 STx15NM65N TO-220, TO-220FP Production 0.250 STx20NM65N TO-220, TO-220FP Production March-2012

V DS [V] SuperMESH3 Products R DS (on) (max) Sales Type Package [Ω] 450 3.5 STx3N45K3 SOT-223, SO-8, IPAK 525 620 2.6 STx4N52K3 TO-220/FP/TO-247/DPAK 1.5 STx5N52K3 TO-220/FP/DPAK/D 2 PAK/IPAK 1.2 STx6N52K3 TO-220/FP/DPAK/D 2 PAK 0.98 STx7N52K3 TO-220/FP/DPAK/D 2 PAK 1.15 STx7N52DK3* TO-220/FP/DPAK 3 STx2N62K3 TO-220/FP/DPAK/IPAK 2.5 STx3N62K3 TO-220/FP/DPAK/D 2 PAK/IPAK/I 2 PAK 2.0 STx4N62K3 TO-220/FP/DPAK/D 2 PAK/IPAK/I 2 PAK/PowerFLAT 5x6 1.6 STx5N62K3 TO-220/FP/DPAK/D 2 PAK/IPAK 1.28 STx6N62K3 TO-220/FP/DPAK/D2PAK/IPAK/I2PAK/Samples in PowerFLAT 5x6 HV* 0.75 STx10N62K3 TO-220/FP/I 2 PAK 0.38 STx17N62K3 TO-220/FP/TO-247 650 1 STx10N65K3 TO-220/FP 29 *FAST Diode Version SuperFREDmesh3 *by Q3 2012 March-2012

FDmesh TM II & FDmesh TM V Fast Power MOSFETs Low R DS (on) x Area for Energy Saving and Fast Diode Recovery Phase FDmesh V

31 FDmesh II: Fast Recovery Diode MOSFET Key features Especially suitable for Bridge topologies Improved intrinsic diode reverse recovery time Higher dv/dt capabilty STW54NM65ND 650V/65mΩ in TO-247 STW55NM60ND 600V/60mΩ in TO-247 Main benefits Increased power density Improved system reliability Higher efficiency in bridge topologies STW55NM60N STW55NM60ND

V DS [V] R DS(on) (max) [Ω] Qrr (typ) [uc] P/N Status Package 500 0.380 <1 STx12NM50ND Production DPAK, D2PAK 600 0.700 <1 STx8NM60ND Production DPAK TO-220 /FP 600 0.450 < 1 STx11NM60ND Production DPAK TO-220 /FP 600 0.299 < 1 STx15NM60ND Production D2PAK TO-220 TO-247 600 0.220 < 1 STx21NM60ND Production D2PAK TO-220 TO-247 600 0.180 < 2 STx23NM60ND Production D2PAK TO-220 TO-247 600 0.160 < 2 STx25NM60ND Production D2PAK TO-220 TO-247 600 0.130 < 2 STx30NM60ND Production D2PAK TO-220/FP TO-247 600 0.110 < 2 STx34NM60ND Production TO-220, TO-247 600 0.088 < 2 STx43NM60ND Production FDmesh II 500/600V/650V D2PAK TO-220/FP TO-247 600 0.060 <2 STW55NM60ND Production TO-247 600 0.085 <2 STW48NM60ND Production by Q3 2012 TO-247 600 0.060 <2 STW56NM60ND Production by Q3 2012 TO-247 650 0.067 <2 STW53NM65ND Samples by Q4 2012 TO-247 650 0.065 <2 STW54NM65ND Samples by Q4 2012 TO-247 650 0.057 <2 STW62NM65ND Samples by Q4 2012 TO-247 March-2012 34

FDmesh V - First Fast MOSFETs@650V- Roadmap 36 V DS [V] R DS(on) (max) [Ω] P/N Application Package Status 650 0.031 STW88N65DM5 SMPS/Solar TO-247 0.085 STP/W/B57N65DM5 SMPS/Solar D2PAK/TO-220/TO-247 Samples Q3/2012 Samples Q3/2012 0.230 STD18N65DM5 SMPS/ Lighting DPAK/TO-220FP/TO-220 Samples Q3/2012 March-2012

SuperMESH TM 5 Breakthrough in Very High Voltage Power MOSFETs Lowest R DS (on) x Area and Qg for Energy Saving

SuperMESH 5 very HV series 41 V DS [V] R DS(on) (max) [Ω] P/N Package Status 800 1.2 STx7N80K5 TO-220/FP/DPAK / PowerFLAT 5x6 HV Samples Q2 12 0.95 STx8N80K5 TO-220/FP/I2PAKFP/DPAK/PowerFLAT 5x6 HV Samples Q2 12 0.375 STx12N80K5 TO-220/FP/D2PAK /TO-247 Samples Q2 12 0.260 STx25N80K5 TO-220/TO-220FP/TO-247 Samples Q2 12 850 0.275 STx23N85K5 PowerFLAT 8x8 HV /TO-247 Samples available Prod. 12 900 0.299 STx21N90K5 TO-220/TO-220FP/TO-247/D2PAK production 950 1.25 STx6N95K5 IPAK/DPAK/TO-220/TO-220FP/TO-247 production 0.330 STx20N95K5 TO-220/TO-220FP/TO-247/D2PAK production 1200 0.690 STx12N120K5 TO-220/TO-3PF/TO-247 Samples Q3 12 Key features Lowest R DS(on) in TO-220 Lowest FOM R DS(on) *Qg New SMD package options PowerFLAT 8x8 HV PowerFLAT 5x6 HV (H2 2012) Benefits Higher input voltage Best efficiency Lowest power losses Lowest heatsink temperature Highest energy saving Increased safety margin March-2012

VHV Power MOSFETs for 3-ph aux. SMPS

VHV MOSFETs for 3-ph aux. SMPS 61 Main Benefits Specifically targeted for 3-Ф aux. SMPS PV inverter Welding Industrial Drvies High reliability makes each solution stronger Wide choice of packages, including new fully isolated TO-3PF, for easier solution V DS [V] P/N R DS(on) (max) [Ω] Packages TO-3PF Higher creepage for electrical insulation STW9N150 2.5 TO-247 1500 STx4N150 7 TO-247/ TO-3PF/TO-220/H2PAK STx3N150 9 TO-247/ TO-3PF/TO-220/H2PAK 1700 STx3N170* 13 TO-247/ TO-3PF/TO-220 * By Q3 12 61

1500V MOSFETs for 3-Φ aux. power supply 62 ST provides the best MOSFET solution to fit each specific application need 3-Φ Auxiliary SMPS reference design 10W output power STEVAL-ISA034V1 40W output power STEVAL-ISA031V1 100W output power STEVAL-ISA054V1

NEW MOSFET PACKAGE ROADMAP ST is introducing NEW Surface Mounting and Through Hole Packages useful to house high voltage Power MOSFETs providing efficient and very compact solution for the most innovative applications in the semiconductor arena

NEW MOSFET PACKAGE ROADMAP 64 PowerFLAT TM 8x8 HV THE SMART PACKAGE SOLUTIONS TO SPACE SAVING PowerFLAT TM 5x6 HV ST provides a NEW FANTASTIC TRIO of Surface Mounting Packages belonging to the new High Voltage PowerFLAT Family 650V MDmesh V series is now enlarged with: PowerFLAT TM 3.3x3.3 HV o Available by March 2012 o STL36N55M5 90mΩ in PowerFLAT 8x8 HV o Available by Q3 2012 o STL18N65M5 240mΩ in PowerFLAT 5x6 HV o STL3N65M5 1.2 Ω in PowerFLAT 3.3x3.3 HV

PowerFLAT 8x8 HV INNOVATION IN PACKAGES 66 ST provides NEW best in class HV Power MOSFETs in MDmesh II, MDmesh V, SuperMESH 5 technologies in PowerFLAT 8x8 HV for very thin and high efficiency applications ( PFC, DC-DC converters, etc.) 650V/550V MDmesh V series : STL57N65M5 (***) 650V, 69 mohm in PowerFLAT 8x8 HV STL31N65M5 (**) 650V, 162 mohm, in PowerFLAT 8x8 HV STL22N65M5 (***) 650V, 200mOhm in PowerFLAT 8x8 HV STL19N65M5 (**) 650V, 240 mohm in PowerFLAT 8x8 HV STL17N65M5 (**)650V, 374 mohm in PowerFLAT 8x8 HV STL18N55M5 (*)550V, 216mOhm in PowerFLAT 8x8 HV STL36N55M5 (*)550V, 90mOhm in PowerFLAT 8x8 HV 600V MDmesh II series : STL26NM60N 600V, 185 mohm in PowerFLAT 8x8 HV STL24NM60N 600V, 215 mohm in PowerFLAT 8x8 HV STL18NM60N 600V, 309 mohm in PowerFLAT 8x8 HV STL13NM60N 600V, 385 mohm in PowerFLAT 8x8 HV 600V FDmesh II series : STL23NM60ND 600V, 199mOhm in PowerFLAT 8x8 HV 850V SuperMESH 5 series : STL23N85K5 (**) 850V, 275 mohm in PowerFLAT 8x8 HV ( (*) available by March 2012, (**) available by Q2 2012, (***) available by Q3 2012)

4.4 mm 1 mm 67 D²PAK PowerFLAT 8x8 Versus D2PAK The smart solution to reduce space Higher Power Density Low thickness/weight package PowerFLAT 8x8 67-57% Area 150 mm 2 64 mm 2 64 mm 2 150 mm 2-77% Thickness

PowerFLAT 5x6 HV INNOVATION IN PACKAGES 69 First Version ST is going to provide NEW best in class HV Power MOSFETs in PowerFLAT 5x6 HV for high efficiency Applications ( PFC, DC-DC converters, adapters, etc.) 1.9 mm creepage 650V MDmesh V series STL20N65M5 (**) 650V, 200 mohm in PowerFLAT 5x6 HV STL18N65M5 (*) 650V 240 mohm in PowerFLAT 5x6 HV STL15N65M5(*) 650V 374 mohm in PowerFLAT 5x6 HV STL12N65M5(*) 650V 530 mohm in PowerFLAT 5x6 HV Second Version 800V SuperMESH 5 series STL8N80K5 (**) 800V 990 mohm in PowerFLAT 5x6 HV STL7N80K5 (*) 800V 1.2 Ohm in PowerFLAT 5x6 HV ( (*) available by Q3 2012, (**) available by Q4 2012) 2.7 mm creepage

PowerFLAT 3.3 x 3.3 HV INNOVATION IN PACKAGES ST provides NEW best in class HV Power MOSFETs for high efficiency applications ( Adapters, Battery Chargers, etc..) 71 600V MDmesh II series: STL3NM60N (*) 600V, 1.8 Ohm in PowerFLAT 3.3 x 3.3 HV 650V MDmesh V series: STL3N65M5 (**) 650V, 1.2 Ohm in PowerFLAT 3.3 x 3.3 HV ( (*) available by March 2012, (**) available by Q3 2012)

I 2 PakFP INNOVATION IN THROUGH HOLE PACKAGES 73 Features Right elevation for 25.4 mm semi-slim adaptor socket Unequalled low RDS(on) x area Benefits ST provides NEW best in class HV Power MOSFETs for very slim and efficient applications (Semi-Slim Adapters, Thin Battery Chargers, etc.) in the new I2PakFP Through Hole Package Compactness Higher power density Mounting package above the standoff avoiding causing stress

I 2 PakFP INNOVATION IN THROUGH HOLE PACKAGES Part No. V DS [V] R DS(on) (max) @10V [Ω] Qg (typ) [nc] Technology Sample Production 74 STFI10NK60Z 600 0.75 50 SuperMESH Available Now STFI13NK60Z 600 0.55 66 SuperMESH Available Now STFI13NM60N 600 0.36 30 MDmesh II Available Now STFI24NM60N 600 0.19 46 MDmesh II Available Now STFI26NM60N 600 0.165 60 MDmesh II Available Now STFI34NM60N 600 0.105 83.6 MDmesh II Available Now STFI20NK50Z 500 0.27 85 SuperMESH Available Now ST provides NEW best in class HV Power MOSFETs in SuperMESH, MDmesh II and in MDmesh V technologies suitable for very slim and efficient adapters 650V MDmesh V series: STFI34N65M5 (**) 650V, 110mOhm in I2PAKFP STFI31N65M5 ( *) 650V, 148mOhm in I2PAKFP STFI20N65M5(***) 650V, 190mOhm in I2PAKFP ( (*) available by March 2012, (**) available by Q2 2012, (***) available by Q3 2012) March-2012

THANKS!!!