Infrared Emitting Diode, 95 nm, CQY37N DESCRIPTION 94 8638-2 CQY37N is an infrared, 95 nm emitting diode in technology molded in a miniature, clear plastic package with lens. FEATURES Package type: leaded Package form: T-¾ Dimensions (in mm): Ø 1.8 Peak wavelength: p = 95 nm High reliability Angle of half intensity: = ± 12 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Package matches with detector BPW17N Compliant to RoHS Directive 22/95/EC and in accordance to WEEE 22/96/EC APPLICATIONS Radiation source in near infrared range PRODUCT SUMMARY COMPONENT I e (mw/sr) (deg) P (nm) t r (ns) CQY37N 5 ± 12 95 8 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM CQY37N Bulk MOQ: 5 pcs, 5 pcs/bulk T-¾ Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 5 V Forward current I F ma Surge forward current t p μs I FSM 2 A Power dissipation P V 16 mw Junction temperature T j C Operating temperature range T amb - 25 to + 85 C Storage temperature range T stg - 25 to + C Soldering temperature t 3 s T sd 245 C Thermal resistance junction/ambient Leads not soldered R thja 45 K/W Document Number: 82 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.7, 8-Mar-11 1
CQY37N Infrared Emitting Diode, 95 nm, 18 12 P V - Power Dissipation (mw) 16 14 12 8 R thja = 45 K/W 6 4 2 1 2 3 4 5 6 7 8 9 21319 T amb - Ambient Temperature ( C) I F - Forward Current (ma) 8 6 R thja = 45 K/W 4 2 1 2 3 4 5 6 7 8 9 2132 T amb - Ambient Temperature ( C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = 5 ma, t p 2 ms V F 1.3 1.6 V Temperature coefficient of V F I F = ma TK VF - 1.3 mv/k Breakdown voltage I R = μa V (BR) 5 μa Junction capacitance V R = V, f = 1 MHz, E = C j 5 pf Radiant intensity I F = 5 ma, t p 2 ms I e 2.2 5 11 mw/sr Radiant power I F = 5 ma, t p 2 ms e 4.8 1 17.8 mw Temperature coefficient of e I F = 5 ma TK e -.8 %/K Angle of half intensity ± 12 deg Peak wavelength I F = 5 ma p 95 nm Spectral bandwidth I F = 5 ma 5 nm Rise time I F = ma t r 8 ns I F = 1.5 A, t p /T =.1, t p 1 μs t r 4 ns Virtual source diameter d 1.2 mm BASIC CHARACTERISTICS (T amb = 25 C, unless otherwise specified) 1 4 1.2 I F - Forward Current (ma) 94 7996 1 3 1 2 1 1 1 1-1 1 2 3 V F - Forward Voltage (V) 4 V F rel - Relative Forward Voltage (V) 1.1 I F = 1 ma 1..9.8.7 2 4 6 8 94 799 T amb - Ambient Temperature ( C) Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Forward Voltage vs. Ambient Temperature www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 82 2 Rev. 1.7, 8-Mar-11
Infrared Emitting Diode, 95 nm, CQY37N 1.25 I Radiant Intensity (mw/sr) e 1 1 Φ e rel - Relative Radiant Power 1..75.5.25 I F = ma 94 792.1 1 1 1 1 2 1 3 1 4 I F Forward Current (ma) 94 7994 9 95 λ - Wavelength (nm) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength - Radiant Power (mw) e Φ 1 1.1 1 1 13718 I F - Forward Current (ma) I e rel Relative Radiant Intensity 94 7922 1..9.8.7.6 1 2 3 4 5 6 7 8.4.2.2.4.6 Fig. 6 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 Φ e rel I e rel ; 1.2.8 I F = 2 ma.4 94 7993-1 1 5 T amb - Ambient Temperature ( C) 14 Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 82 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.7, 8-Mar-11 3
CQY37N Infrared Emitting Diode, 95 nm, PACKAGE DIMENSIONS in millimeters Drawing-No.: 6.544-552.1-4 Issue: 1; 12.1.95 95 11262 www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 82 4 Rev. 1.7, 8-Mar-11
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