TGA78-CP Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal Gain: > db IM3: - dbc @ dbm Pout/Tone Bias: VD =, IDQ = ma, VG = -2.8 V Typical Package Dimensions: 15.2 x 15.2 x 3.5 mm Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 1 9 8 7 6 General Description TriQuint s TGA78-CP is a packaged wideband power amplifier fabricated on TriQuint s TQGaN.um GaN on SiC process. Operating from 2 to, the TGA78-CP achieves W saturated output power with a power-added efficiency of > %, and > db small signal gain. The TGA78-CP is offered in a 1-lead 15 x 15 mm bolt-down package. The package has a pure Cu base, offering superior thermal management. The TGA78- CP is ideally suited to support both commercial and defense applications. Pin Configuration Pad No. Symbol 1, 5 VG 2, 4, 7, 9 GND 3 RFIN 6, 1 VD 8 RFOUT Both RF ports have integrated DC blocking capacitors and are fully matched to Ohms. Lead free and RoHS compliant. Evaluation Boards are available upon request. Ordering Information Part ECCN Description TGA78-CP 3A1.b.2.a 2, W GaN Power Amplifier Preliminary Datasheet: 9-18-14-1 of 12 - Disclaimer: Subject to change without notice
TGA78-CP Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85 C Input Power, CW, Ω, (PIN) Input Power, CW, VSWR 3:1, VD = V,, (PIN) Input Power, CW, VSWR 1:1, VD =, (PIN) Value V -8 to V 5 A : -15 to ma : -15 to 6 ma - C: -15 to 9 ma 85 W 27 dbm 27 dbm dbm Channel Temperature (TCH) 275 C Mounting Temperature ( Seconds) C Storage Temperature -55 to 1 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Drain Voltage (VD) Value Drain Current (IDQ) ma Drain Current Under RF Drive (ID_DRIVE) See plots p. 7 Gate Voltage (VG) 2.8 V (Typ.) Gate Current Under RF Drive (IG_DRIVE) See plots p. 7 Temperature (TBASE) - to Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted:, VD =, IDQ = ma, VG = 2.8 V Typ, CW. Parameter Min Typical Max Units Operational Frequency Range 2. 6. GHz Small Signal Gain > db Input Return Loss > 12 db Output Return Loss > 5 db Output Power @ Pin = 23 dbm dbm Power Added Efficiency @ Pin = 23 dbm > % IM3 (Pout/tone = dbm/tone) - dbc IM5 (Pout/tone = dbm/tone) - dbc Small Signal Gain Temperature Coefficient -.5 db/ C Output Power Temperature Coefficient -.2 dbm/ C Preliminary Datasheet: 9-18-14-2 of 12 - Disclaimer: Subject to change without notice
R JC (C/W) Power Dissipation (W) Median Lifetime, T M (Hours) TGA78-CP Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θjc) (1) TBASE = 85 C, VD = (CW) 1.95 C/W Channel Temperature (TCH) (Under RF drive) At Freq = 5 GHz, PIN = 23 dbm: IDQ = ma, ID_Drive = 3. A 192 C Median Lifetime (TM) POUT = 44 dbm, PDISS = 55 W 2.6E+7 Hrs Notes: 1. Thermal resistance measured to back of package. Test Conditions: VD = V; Failure Criteria = 1% reduction in ID_MAX 1E+18 1E+17 1E+16 1E+15 1E+14 1E+13 1E+12 1E+11 1E+1 1E+9 1E+8 1E+7 1E+6 1E+5 1E+4 Median Lifetime vs. Channel Temperature FET13 75 1 1 1 175 2 275 Channel Temperature, T CH ( C) 2. T BASE = 85 C, CW Thermal Resistance vs. P DISS 7. 6. P DISS vs. Frequency vs. T BASE P IN = 23 dbm, CW 2.. 2. 1.75... 1. - C 1. 55 65 75 85 P DISS (W). 2. 2.5 3. 3.5 4. 4.5 5. 5.5 6. 6.5 7. Preliminary Datasheet: 9-18-14-3 of 12 - Disclaimer: Subject to change without notice
S22 (db) S22 (db) S11 (db) S11 (db) S21 (db) S21 (db) TGA78-CP Typical Performance: Small Signal Conditions unless otherwise specified: VD =, IDQ = ma, VG = -2.8 V Typical, CW. 38 Gain vs. Frequency vs. V D Temp = 38 Gain vs. Frequency vs. Temp. 29 29 23 V V 1 2 3 4 5 6 7 23 - C 1 2 3 4 5 6 7 Input Return Loss vs. Frequency vs. V D Input Return Loss vs. Frequency vs. Temp. -3-3 -6-6 -9-9 -12-12 -15-15 -18-18 -21-24 -27 - V V Temp = 1 2 3 4 5 6 7-21 -24-27 - - C 1 2 3 4 5 6 7-3 Output Return Loss vs. Frequency vs. V D Temp = -3 Output Return Loss vs. Freq. vs. Temp. -6-6 -9-9 -12-12 -15-18 -21-24 -27 V V -15-18 -21-24 -27 - C - 1 2 3 4 5 6 7-1 2 3 4 5 6 7 Preliminary Datasheet: 9-18-14-4 of 12 - Disclaimer: Subject to change without notice
Output Power (dbm) Output Power (dbm) Output Power (dbm) Output Power (dbm) Output Power (dbm) TGA78-CP Typical Performance: Large Signal Conditions unless otherwise specified: VD =, IDQ = ma, VG = -2.8 V Typical, CW. Output Power vs. Frequency vs. V D P IN = 23 dbm, Temp = Output Power vs. Frequency vs. Temp. P IN = 23 dbm, Temp = V - C Output Power vs. Input Power vs. V D Temp =, Output Power vs. Input Power vs. Freq. Temp = V Output Power vs. Input Power vs. Temp. - C Preliminary Datasheet: 9-18-14-5 of 12 - Disclaimer: Subject to change without notice
Power Added Efficiency (%) Gain (db) Power Added Efficiency (%) Gain (db) Power Added Efficiency (%) Gain (db) TGA78-CP Typical Performance: Large Signal Conditions unless otherwise specified: VD =, IDQ = ma, VG = -2.8 V Typical, CW. PAE vs. Frequency vs. V D 34 Power Gain vs. Input Power vs. V D Temp =, 28 V P IN = 23 dbm, Temp = 24 22 V PAE vs. Input Power vs. Freq. 34 28 Power Gain vs. Input Power vs. Freq. Temp = 15 1 5 Temp = 24 22 PAE vs. Frequency vs. Temp. P IN = 23 dbm 34 Power Gain vs. Input Power vs. Temp. - C 28 - C 24 22 Preliminary Datasheet: 9-18-14-6 of 12 - Disclaimer: Subject to change without notice
Drain Current (ma) Gate Current (ma) Drain Current (A) Gate Current (ma) Drain Current (A) Gate Current (ma) TGA78-CP Typical Performance: Large Signal Conditions unless otherwise specified: VD =, IDQ = ma, VG = -2.8 V Typical, CW. 4. 3.5 3. 2.5 2. 1.5 Drain Current vs. Frequency vs. V D P IN = 23 dbm, Temp = V 1..5. 29 23 17 14 11 8 5 Gate Current vs. Frequency vs. V D P IN = 23 dbm, Temp = V 2-1 4. 3.5 Drain Current vs. Frequency vs. Temp. P IN = 23 dbm 79 69 Gate Current vs. Frequency vs. Temp. P IN = 23 dbm 3. 59 2.5 49 2. 1.5 - C 39 29 - C 1. 19.5 9. -1 4. 3.5 3. 2.5 2. 1.5 1..5. Drain Current vs. Input Power vs. Freq. Temp = 29 23 17 14 11 8 5 2-1 Gate Current vs. Input Power vs. Temp. - C Preliminary Datasheet: 9-18-14-7 of 12 - Disclaimer: Subject to change without notice
IM3 (dbc) IM5 (dbc) IM3 (dbc) IM5 (dbc) 2f Output Power (dbc) 3f Output Power (dbc) TGA78-CP Typical Performance: Large Signal and Linearity Conditions unless otherwise specified: VD =, IDQ = ma, VG = -2.8 V Typical, CW. -1-2 nd Harmonic vs. Output Power vs. Freq. -1-3rd Harmonic vs. Output Power. vs. Freq. Temp = C - - - - - - -6-6 -7-8 -9 Fundamental Output Power (dbm) -7-8 -9 Fundamental Output Power (dbm) - - - - - IM3 vs. Frequency vs. Temperature - - -55 P OUT = dbm/tone -6 2. 2.5 3. 3.5 4. 4.5 5. 5.5 6. - - - - - -55-6 -65-7 -75 IM5 vs. Frequency vs. Temperature P OUT = dbm/tone -8 2. 2.5 3. 3.5 4. 4.5 5. 5.5 6. - - - IM3 vs. Output Power vs. Frequency - - - - -55 Temp = -6 1 15 Output Power per Tone (dbm) - - - - - -55-6 IM5 vs. Output Power vs. Frequency -65-7 -75 Temp = -8 1 15 Output Power per Tone (dbm) Preliminary Datasheet: 9-18-14-8 of 12 - Disclaimer: Subject to change without notice
TGA78-CP Applications Information and Pin Layout C5 1uF C1.1uF 1 1 C2.1uF Vg RF IN 3 2 9 8 RF OUT Vd 4 7 C6 1uF C4.1uF 5 6 C3.1uF Bias-up Procedure 1. Set ID limit to 5 A, IG limit to ma 2. Apply 5 V to VG 3. Apply + to VD; ensure IDQ is approx. ma 4. Adjust VG until IDQ = ma (VG ~ 2.8 V Typ.). 5. Turn on RF supply Bias-down Procedure 1. Turn off RF supply 2. Reduce VG to 5 V; ensure IDQ is approx. ma 3. Set VD to V 4. Turn off VD supply 5. Turn off VG supply Pin Description Pin No. Symbol Description 1,5 VG Gate Voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 3 RFIN Output; matched to Ω; DC blocked 2,4,7,9 GND Must be grounded on the PCB. 6,1 VD Drain voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 8 RFOUT Input; matched to Ω; DC blocked Preliminary Datasheet: 9-18-14-9 of 12 - Disclaimer: Subject to change without notice
TGA78-CP Evaluation Board Vg GND C1 C5 Vd GND C2 TGA78 C4 GND Vg C6 C3 GND Vd NOTE: Both Top and Bottom Vd and Vg must be biased. Bill of Material Reference Des. Value Description Manuf. Part Number C1, C2, C3, C4.1 μf Cap, 63, V, 1%, X7R Various C5, C6 1 μf Cap, 16, V, %, X5R Various Assembly Notes 1. Clean the board or module with alcohol. Allow it to dry fully. 2. Nylock screws are recommended for mounting the TGA78-CP to the board. 3. To improve the thermal and RF performance, we recommend the following: a. Apply thermal compound or 4 mils indium shim between the package and the board. b. Attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim between the heat sink and the board. 4. Apply solder to each pin of the TGA78-CP. 5. Clean the assembly with alcohol. Preliminary Datasheet: 9-18-14-1 of 12 - Disclaimer: Subject to change without notice
TGA78-CP Mechanical Information Units: inches Tolerances: unless specified x.xx = ±.1 x.xxx = ±.5 Materials: Base: Copper Lid: Plastic All metalized features are gold plated Part is epoxy sealed Marking: 78: Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number MXXX: Batch ID Preliminary Datasheet: 9-18-14-11 of 12 - Disclaimer: Subject to change without notice
Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: TBD Value: TBD Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating Level 5A at C convection reflow. The part is rated Moisture Sensitivity Level 5A at C per JEDEC standard IPC/JEDEC J-STD-. TGA78-CP Solderability Compatible with the latest version of J-STD-, Leadfree solder, C RoHS Compliance This part is compliant with EU 2/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br2) Free PFOS Free SVHC Free ECCN US Department of Commerce: 3A1.b.2.a Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +1.972.994.8465 Email: info-sales@triquint.com Fax: +1.972.994.84 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Datasheet: 9-18-14-12 of 12 - Disclaimer: Subject to change without notice