CRAM-8 Thyristor Low Power Use REJG1-1 Rev.1. Aug..4 Features I T (AV) :. A V DRM : 4 V I GT : 1 µa Planar Passivation Type Outline TO-9 1 1. Cathode. Anode. Gate 1 Applications Solid state relay, leakage protector, fire alarm, timer, ring counter, electric blanket, protective circuit for acoustic equipment, strobe flasher, and other general purpose control applications Maximum Ratings Parameter Symbol Voltage class Repetitive peak reverse voltage V RRM 4 V Non-repetitive peak reverse voltage V RSM V DC reverse voltage V R (DC) V Repetitive peak off-state voltage Note1 V DRM 4 V DC off-state voltage Note1 V D (DC) V 8 Unit Rev.1., Aug..4, page 1 of
CRAM-8 Parameter Symbol Ratings Unit Conditions RMS on-state current I T (RMS).4 A Average on-state current I T (AV). A Commercial frequency, sine half wave 18 conduction, Ta = C Surge on-state current I TSM 1 A 6Hz sine half wave 1 full cycle, peak value, non-repetitive I t for fusing I t.4 A s Value corresponding to 1 cycle of half wave 6Hz, surge on-state current Peak gate power dissipation P GM.1 W Average gate power dissipation P G (AV).1 W Peak gate forward voltage V FGM 6 V Peak gate reverse voltage V RGM 6 V Peak gate forward current I FGM.1 A Junction temperature Tj 4 to +1 C Storage temperature Tstg 4 to +1 C Mass. g Typical value Notes: 1. With gate to cathode resistance R GK = 1 kω. Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak reverse current I RRM.1 ma Tj = 1 C, V RRM applied Repetitive peak off-state current I DRM.1 ma Tj = 1 C, V DRM applied, R GK = 1 kω On-state voltage V TM 1.6 V Ta = C, I TM =.6 A, instantaneous value Gate trigger voltage V GT.8 V Tj = C, V D = 6 V, I T =.1 A Note Gate non-trigger voltage V GD. V Tj = 1 C, V D = 1/ V DRM, R GK = 1 kω Gate trigger current I GT 1 1 Note µa Tj = C, V D = 6 V, I T =.1 A Note Holding current I H ma Tj = C, V D = 1 V, R GK = 1 kω Thermal resistance R th (j-a) 18 C/W Junction to ambient Notes:. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item A B C I GT (µa) 1 to to 4 to 1 The above values do not include the current flowing through the 1 kω resistance between the gate and cathode.. I GT, V GT measurement circuit. A1 6Ω V DC I GS I GT A A R GK V1 1 1kΩ V GT Switch TUT 6V DC Switch 1 : IGT measurement Switch : VGT measurement (Inner resistance of voltage meter is about 1kΩ) Rev.1., Aug..4, page of
CRAM-8 Performance Curves Maximum On-State Characteristics Rated Surge On-State Current On-State Current (A) 1 1 1 1 1 Ta = C 1 1. 1. 1.4 1.6 1.8...4.6 Surge On-State Current (A) 1 9 8 6 4 1 1 4 1 1 4 1 On-State Voltage (V) Conduction Time (Cycles at 6Hz) Gate Voltage (V) Gate Characteristics 1 V FGM = 6V P GM =.1W 1 1 P G(AV) =.1W 1 V GT =.8V I GT = 1µA (Tj = C) 1 1 V GD =.V I FGM =.1A 1 1 1 1 1 1 1 1 (%) Gate Trigger Current (Tj = t C) Gate Trigger Current (Tj = C) 1 1 1 1 Gate Trigger Current vs. 1 6 4 4 6 8 1114 Gate Current (ma) ( C) Gate Trigger Voltage (V) 1..9.8..6..4.. Gate Trigger Voltage vs. Distribution.1 4 4 6 8 111416 Transient Thermal Impedance ( C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 1 1 1 1 1 18 16 14 1 1 8 6 4 1 1 1 1 1 ( C) Time (s) Rev.1., Aug..4, page of
CRAM-8 Maximum Average Power Dissipation (Single-Phase Half Wave) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Average Power Dissipation (W) Average Power Dissipation (W).8..6..4.. 9 6 = 18 1.1 Resistive, inductive loads.1...4.8..6..4.. Maximum Average Power Dissipation (Single-Phase Full Wave) = 6 Ambient Temperature ( C) Ambient Temperature ( C) 16 14 1 1 8 6 4 16 = 6 9 1 18.1.. 6 4 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) 18 14 1 1 6 9 Resistive loads 6 1 Natural convection 8 6.1 Resistive loads.1...4. 6 Resistive, inductive loads Natural convection.4 = 6 9 1 18.1...4. Maximum Average Power Dissipation (Rectangular Wave) Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) Average Power Dissipation (W).8..6..4.. = 9 6 1 DC 18 6.1 Resistive, inductive loads.1...4. Ambient Temperature ( C) 16 14 1 1 8 6 4 Resistive, inductive loads Natural convection 6 = 6 9 1 18 DC.1...4. Rev.1., Aug..4, page 4 of
CRAM-8 1 (%) Breakover Voltage (Tj = t C) Breakover Voltage (Tj = C) 16 14 1 1 8 6 4 Breakover Voltage vs. ( C) 1 (%) Breakover Voltage (RGK = rkω) Breakover Voltage (R GK = 1kΩ) 4 4 6 8 111416 8 Breakover Voltage vs. Gate to Cathode Resistance 1 R GK = 1kΩ Tj = 1 C 1 6 4 1 1 1 1 1 1 Gate to Cathode Resistance (kω) 1 (%) Breakover Voltage (dv/dt = vv/µs) Breakover Voltage (dv/dt = 1V/µs) 1 1 8 6 Breakover Voltage vs. Rate of Rise of Off-State Voltage # 4 # 1 # 1 I GT( C)=1µA # I GT( C)=66µA Tj = 1 C, R GK = 1kΩ 1 1 1 1 1 Rate of Rise of Off-State Voltage (V/µs) Holding Current (ma) 1 1 1 1 Holding Current vs. Distribution Tj = C I H( C) = 1mA I GT( C) = µa 1 1 6 4 4 6 8 1114 ( C) 1 (%) Holding Current (R GK = rkω) Holding Current (RGK = 1kΩ) 4 1 Holding Current vs. Gate to Cathode Resistance # 1 # I GT( C) IH(1kΩ) # 1 1µA 1.6mA # 9µA 1.8mA Tj = C 1 1 1 1 1 1 Gate to Cathode Resistance (kω) 1 (%) Repetitive Peak Reverse Voltage (Tj = t C) Repetitive Peak Reverse Voltage (Tj = C) 16 14 1 1 8 6 4 Repetitive Peak Reverse Voltage vs. 4 4 6 8 111416 ( C) Rev.1., Aug..4, page of
CRAM-8 Gate Trigger Current vs. Gate Current Pulse Width 1 (%) Gate Trigger Current (tw) Gate Trigger Current (DC) 1 4 1 4 # 1 # I GT( C) # 1 1µA # 66µA Tj = C 1 1 1 4 1 1 4 1 Gate Current Pulse Width (µs) Rev.1., Aug..4, page 6 of
CRAM-8 Package Dimensions TO-9 EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material Conforms Conforms. Cu alloy φ. max 4.4 11. min 1. 1. 1.1.6. max Circumscribed circle φ. Symbol A Dimension in Millimeters Min Typ Max A1 Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. A b D E e x y y 1 ZD ZE Order Code Lead form Standard packing Quantity Standard order code Standard order code example Straight type Vinyl sack Type name CRAM-8 Lead form Vinyl sack Type name Lead forming code CRAM-8-A6 Form A8 Taping Type name TB CRAM-8-TB Note : Please confirm the specification about the shipping in detail. Rev.1., Aug..4, page of
Sales Strategic Planning Div. Nippon Bldg., -6-, Ohte-machi, Chiyoda-ku, Tokyo 1-4, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES http://www.renesas.com Renesas Technology America, Inc. 4 Holger Way, San Jose, CA 914-168, U.S.A Tel: <1> (48) 8- Fax: <1> (48) 8-1 Renesas Technology Europe Limited. Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 FH, United Kingdom Tel: <44> (168) 8 1, Fax: <44> (168) 8 9 Renesas Technology Europe GmbH Dornacher Str., D-86 Feldkirchen, Germany Tel: <49> (89) 8, Fax: <49> (89) 99 11 Renesas Technology Hong Kong Ltd. /F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong Tel: <8> 6-6688, Fax: <8> -686 Renesas Technology Taiwan Co., Ltd. FL 1, #99, Fu-Hsing N. Rd., Taipei, Taiwan Tel: <886> () 1-888, Fax: <886> () 1-999 Renesas Technology (Shanghai) Co., Ltd. 6/F., Ruijin Building, No. Maoming Road (S), Shanghai, China Tel: <86> (1) 64-11, Fax: <86> (1) 641-9 Renesas Technology Singapore Pte. Ltd. 1, Harbour Front Avenue, #6-1, Keppel Bay Tower, Singapore 986 Tel: <6> 61-, Fax: <6> 68-81 4. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon.1.