TVS Diodes. ESD18VU1B Series. Data Sheet. Industrial and Multi-Market. Transient Voltage Suppressor Diodes

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Transcription:

TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B Series ESD / Transient Protection Diode for Near Field Communication (NFC) ESD18VU1B-02LRH ESD18VU1B-02LS Data Sheet Revision 1.0, 2012-02-09 Final Industrial and Multi-Market

Edition 2012-02-09 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Revision History Page or Item Subjects (major changes since previous revision) Revision 1.0, 2012-02-09 Trademarks of Infineon Technologies AG AURIX, BlueMoon, COMNEON, C166, CROSSAVE, CanPAK, CIPOS, CoolMOS, CoolSET, CORECONTROL, DAVE, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, EiceDRIVER, EUPEC, FCOS, HITFET, HybridPACK, ISOFACE, I²RF, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OmniTune, OptiMOS, ORIGA, PROFET, PRO-SIL, PRIMARION, PrimePACK, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SMARTi, SmartLEWIS, TEMPFET, thinq!, TriCore, TRENCHSTOP, X-GOLD, XMM, X-PMU, XPOSYS. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, PRIMECELL, REALVIEW, THUMB of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Sattelite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update 2010-06-09 Final Data Sheet 3 Revision 1.0, 2012-02-09

Table of Contents Table of Contents Table of Contents................................................................ 4 List of Figures................................................................... 5 List of Tables.................................................................... 6 1 ESD / Transient Protection Diode for Near Field Communication (NFC)................... 7 1.1 Features........................................................................ 7 1.2 Application Examples.............................................................. 7 2 Product Description.............................................................. 7 3 Characteristics.................................................................. 8 3.1 Electrical Characteristics at T A = 25 C, unless otherwise specified.......................... 8 3.2 Typical Characteristics at T A = 25 C, unless otherwise specified........................... 10 4 Application Information.......................................................... 13 5 Ordering Information Scheme (Examples)........................................... 14 6 Package Information............................................................ 15 6.1 PG-TSSLP-2-1 [2]............................................................... 15 6.2 PG-TSLP-2-17 [2]................................................................ 16 References.................................................................... 17 Terminology................................................................... 18 Final Data Sheet 4 Revision 1.0, 2012-02-09

List of Figures List of Figures Figure 1 Pin Configuration and Schematic Diagram........................................... 7 Figure 2 Definitions of electrical characteristics............................................... 8 Figure 3 Reverse current: I R = f(v R )....................................................... 10 Figure 4 Line capacitance: C L = f(v R ), f = 1 MHz............................................. 10 Figure 5 IEC61000-4-2 V CL = f(t), 8 kv positiv pulse from pin 1 to pin 2............................ 11 Figure 6 IEC61000-4-2 V CL = f(t), 8 kv negativ pulse from pin 1 to pin 2........................... 11 Figure 7 Clamping voltage : I TLP = f(v TLP ).................................................. 12 Figure 8 Bi-directional ESD / Transient protection for NFC Frontend [3]........................... 13 Figure 9 Ordering information scheme..................................................... 14 Figure 10 PG-TSSLP-2-1: Package overview................................................ 15 Figure 11 PG-TSSLP-2-1: Footprint........................................................ 15 Figure 12 PG-TSSLP-2-1: Packing......................................................... 15 Figure 13 PG-TSSLP-2-1: Marking (example)................................................ 15 Figure 14 PG-TSLP-2-17: Package overview................................................. 16 Figure 15 PG-TSLP-2-17: Footprint........................................................ 16 Figure 16 PG-TSLP-2-17: Packing......................................................... 16 Figure 17 PG-TSLP-2-17: Marking (example)................................................ 16 Final Data Sheet 5 Revision 1.0, 2012-02-09

List of Tables List of Tables Table 1 Ordering Information............................................................. 7 Table 2 Maximum Rating at T A = 25 C, unless otherwise specified............................... 8 Table 3 AC Characteristics at T A = 25 C, unless otherwise specified............................. 9 Table 4 RF Characteristics at T A = 25 C, unless otherwise specified............................. 9 Table 5 ESD Characteristics at T A = 25 C, unless otherwise specified............................ 9 Final Data Sheet 6 Revision 1.0, 2012-02-09

ESD / Transient Protection Diode for Near Field Communication (NFC) 1 ESD / Transient Protection Diode for Near Field Communication (NFC) 1.1 Features ESD / transient protection according to: IEC61000-4-2 (ESD contact discharge): ±10 kv IEC61000-4-5 (surge): 2 A (t p = 8 / 20 µs) AC working voltage up to ±18.5 V (V TRIG min = 20 V) Ultra-low capacitance: C L = 0.3 pf (typical) Small leadless plastic package, size 0201 / 0402 Pb-free (RoHS compliant) and halogen free package 1.2 Application Examples ESD Protection of RF signal lines in Near Field Communication (NFC) applications 2 Product Description Pin 1 Pin 2 Pin 1 Pin 1 marking (lasered) TSLP-2 Pin 1 Pin 2 Pin 2 TSSLP-2 a) Pin configuration b) Schematic diagram Figure 1 Pin Configuration and Schematic Diagram PG-TS(S)LP-2_Dual_Diode_Serie_PinConf_and_SchematicDiag.vsd Table 1 Ordering Information Type Package Configuration Marking code ESD18VU1B-02LRH PG-TSLP-2-17 1 line, bi-directional X ESD18VU1B-02LS PG-TSSLP-2-1 1 line, bi-directional X Final Data Sheet 7 Revision 1.0, 2012-02-09

Characteristics 3 Characteristics Table 2 Maximum Rating at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. ESD air discharge 1) V ESD 15 kv ESD contact discharge 1) V ESD 10 kv Peak pulse current (t p = 8 / 20 μs) 2) I PP 2 A Operating temperature T OP -40 85 C Storage temperature T stg -55 150 C 1) V ESD according to IEC61000-4-2 2) I PP according to IEC61000-4-5 3.1 Electrical Characteristics at T A = 25 C, unless otherwise specified V F Forward voltage I F I F Forward current I PP V R Reverse voltage R DYN I R Reverse current I Hold I Trig V Trig V Hold V RWM I RWM V CL V R V CL I RWM V RWM V Hold V Trig I Trig I Hold R DYN -I PP I R R DYN Dynamic resistance V FC Forward clamping voltage V Trig Triggering reverse voltage I Trig Triggering reverse current V CL Clamping voltage I Hold Holding reverse current V Hold Holding reverse voltage I PP Peak pulse current V RWM Reverse working voltage maximum I RWM Reverse working current maximum Diode_Characteristic_Curve_with _snapback_bi-directional.vsd Figure 2 Definitions of electrical characteristics Final Data Sheet 8 Revision 1.0, 2012-02-09

Characteristics Table 3 AC Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition AC working voltage V RWM 18.5 V Both directions AC trigger voltage V TRIG 20 V Both directions AC reverse current I R 30 na V R = 18.5 V Both directions 1 ma V R = 20 V Both directions Table 4 RF Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Line capacitance 1) C L 0.3 0.6 pf V R = 0 V, f = 1 MHz 0.3 0.6 pf V R = 0 V, f = 1 GHz Serie inductance L S 0.2 nh ESD18VU1B-02LS 0.4 nh ESD18VU1B-02LRH 1) Total capacitance I/O to GND Table 5 ESD Characteristics at T A = 25 C, unless otherwise specified Parameter Symbol Values Unit Note / Min. Typ. Max. Test Condition Clamping voltage 1) V CL 28 V I PP = 16 A, t p = 100 ns 34 I PP = 25 A, t p = 100 ns Clamping voltage 2) V CL 17 V I PP = 1 A, t p = 8 / 20 μs Dynamic resistance 1) R DYN 0.6 Ω 1)Please refer to Application Note AN210 [1]. TLP parameter: Z 0 = 50 Ω, t p = 100ns, t r = 300ps, averaging window: t 1 = 30 ns to t 2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between I PP1 = 10 A and I PP2 = 40 A 2) I PP according to IEC61000-4-5 Final Data Sheet 9 Revision 1.0, 2012-02-09

Characteristics 3.2 Typical Characteristics at T A = 25 C, unless otherwise specified 10-3 10-4 10-5 10-6 I R [A] 10-7 10-8 10-9 10-10 10-11 10-12 0 5 10 15 20 V R [V] Figure 3 Reverse current: I R = f(v R ) 0.6 0.5 0.4 C L [pf] 0.3 0.2 0.1 0 0 5 10 15 20 V R [V] Figure 4 Line capacitance: C L = f(v R ), f = 1 MHz Final Data Sheet 10 Revision 1.0, 2012-02-09

Characteristics 140 120 Scope: 20 GS/s 100 V CL [V] 80 60 40 20 0 V CL-max-peak = 134.1 [V] V CL-30ns-peak = 22.9 [V] -20-100 -50 0 50 100 150 200 250 300 350 400 t p [ns] Figure 5 IEC61000-4-2 V CL = f(t), 8 kv positiv pulse from pin 1 to pin 2 20 0 Scope: 20 GS/s V CL [V] -20-40 -60-80 -100-120 V CL-30ns-peak = -24.1 [V] V CL-max-peak = -135.5 [V] -140-100 -50 0 50 100 150 200 250 300 350 400 t p [ns] Figure 6 IEC61000-4-2 V CL = f(t), 8 kv negativ pulse from pin 1 to pin 2 Final Data Sheet 11 Revision 1.0, 2012-02-09

Characteristics 30 ESD18VU1B-02LS/LRH R DYN 15 I TLP [A] 20 10 R DYN =0.6Ω 10 5 Equivalent V IEC [kv] 0 0 0 5 10 15 20 25 30 35 40 V TLP [V] Figure 7 Clamping voltage : I TLP = f(v TLP ) Final Data Sheet 12 Revision 1.0, 2012-02-09

Application Information 4 Application Information Mobile phone differential antenna Main PCB / Top shell Interconnection top/bottom shell external pads Bottom shell NFC Mo dule TX/RX section loop- TX+ TX- GND RX EMI -LP filter Antenna matching loop + GND RF=13.56MHz signal vs. GND<+-18Vp +Vsignal vs. -Vsignal <36V!!! Lo opante nna ~1µH Caps should be high voltage type to be save regards the residual ESD peak Mobile phone single ended antenna Main PCB / Top shell Interconnection top /bottom shell external pads Bottom shell RF=13.56MHz signal vs. GND<+-18Vp NFC Modul e TX/ RX sectio n TX+ TX- GND RX EMI - LP filter Antenna matching loop GND Caps should be high voltage type to be save regards the residual ESD peak Figure 8 Bi-directional ESD / Transient protection for NFC Frontend [3] ESD18V_application example.vsd Final Data Sheet 13 Revision 1.0, 2012-02-09

Ordering Information Scheme (Examples) 5 Ordering Information Scheme (Examples) ESD 0P1 RF -XX YY Package XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins) YY = Package family: LS = TSSLP LRH = TSLP For Radio Frequency Applications Line Capacitance CL in pf: (i.e.: 0P1 = 0.1pF) ESD 5V3 U n U -XX YY Package or Application XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins) YY = Package family: LS = TSSLP LRH = TSLP S = SOT363 U = SC74 XX = Application family: LC = Low Clamp HDMI Uni- / Bi-directional or Rail to Rail protection Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines) Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF) Figure 9 Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V) Ordering information scheme Final Data Sheet 14 Revision 1.0, 2012-02-09

Package Information 6 Package Information 6.1 PG-TSSLP-2-1 [2] Top view +0.01 0.31-0.02 Bottom view 0.32±0.035 0.355±0.025 2 1 0.62 ±0.035 Cathode marking 1) 0.26±0.025 1) 0.2 ±0.025 Figure 10 1) Dimension applies to plated terminal PG-TSSLP-2-1: Package overview TSSLP-2-1,-2-PO V05 0.32 0.24 0.27 0.24 0.19 0.19 0.19 0.62 0.57 0.14 Copper Solder mask Stencil apertures Figure 11 PG-TSSLP-2-1: Footprint TSSLP-2-1,-2-FP V02 4 0.35 0.73 8 Figure 12 Cathode marking PG-TSSLP-2-1: Packing 0.43 TSSLP-2-1,-2-TP V03 BAR95-02LS Type code Pin 1 marking Laser marking Figure 13 PG-TSSLP-2-1: Marking (example) Final Data Sheet 15 Revision 1.0, 2012-02-09

Package Information 6.2 PG-TSLP-2-17 [2] Top view +0.01 0.39-0.03 Bottom view 0.05 MAX. 0.6 ±0.05 0.65 ±0.05 2 1 1±0.05 Figure 14 Cathode marking PG-TSLP-2-17: Package overview 1) 0.5 ±0.035 1) Dimension applies to plated terminal 1) 0.25 ±0.035 TSLP27PO V02 0.6 0.35 0.45 1 0.3 0.275 0.925 Figure 15 PG-TSLP-2-17: Footprint 0.35 0.275 0.375 Copper Solder mask Stencil apertures TSLP-2-7-FP V01 4 0.5 1.16 8 Orientation marking 0.76 TSLP-2-7-TP V03 Figure 16 PG-TSLP-2-17: Packing Type code 12 Cathode marking Figure 17 PG-TSLP-2-17: Marking (example) Final Data Sheet 16 Revision 1.0, 2012-02-09

References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages [3] Infineon AG - Application Note AN244: Tailored ESD Protection for the NFC Frontend Final Data Sheet 17 Revision 1.0, 2012-02-09

Terminology Terminology C L ESD IEC I PP I R I RWM NFC R DYN RoHS T A TLP T OP t p t r T stg V CL V ESD V FC V IEC V R V RWM V TRIG Z 0 Line capacitance Electrostatic Discharge International Electrotechnical Commission Peak pulse current Reverse current Reverse working current maximum Near Field Communication Dynamic resistance Restriction of Hazardous Substances Directive Ambient temperature Transmission Line Pulse Operation temperature Pulse duration Pulse rise time Storage temperature Reverse clamping voltage Electrostatic discharge voltage Forward Clamping Voltage Equivalent stress level according IEC61000-4-2 (R = 330 Ω, C = 150 pf) Reverse voltage Reverse working voltage maximum Trigger voltage Impedance Final Data Sheet 18 Revision 1.0, 2012-02-09

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