DISCRETE SEMICONDUCTORS DATA SHEET M3D73 BFRT Supersedes data of Mar 4 May 7
BFRT FEATURES Low current consumption High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability SOT46 (SC-7) package. APPLICATIONS Low power amplifiers, oscillators and mixers particularly in RF portable communication equipment (cellular phones, cordless phones and pagers) up to GHz. DESCRIPTION NPN transistor in a plastic SOT46 (SC-7) package. PINNING PIN DESCRIPTION base emitter 3 collector page 3 Top view MBK9 Marking code: N. Fig. SOT46. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V CBO collector-base voltage open emitter V V CES collector-emitter voltage R BE = V I C DC collector current 8 ma P tot total power dissipation T s 7 C; note mw h FE DC current gain I C = ma; V CE =6V; T j = C 6 f T transition frequency I C = ma; V CE = 6 V; f = GHz; 9 GHz T amb = C G UM maximum unilateral power gain I C = ma; V CE = 6 V; f = 9 MHz; 7 db T amb = C F noise figure I C =. ma; V CE =6V; f = 9 MHz; T amb = C..7 db LIMITING VALUES In accordance with the Absolute Maximum System (IEC 634). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter V V CE collector-emitter voltage R BE = V V EBO emitter-base voltage open collector. V I C DC collector current 8 ma P tot total power dissipation T s 7 C; note mw T stg storage temperature 6 + C T j junction temperature C Note. T s is the temperature at the soldering point of the collector pin. May 7
BFRT THERMAL RESISTANCE SYMBOL PARAMETER VALUE UNIT R th j-s thermal resistance from junction to soldering point K/W MGU68 P tot (mw) T s ( C) Fig. Power derating curve. May 7 3
BFRT CHARACTERISTICS T j = C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector cut-off current I E = ; V CB =6V na h FE DC current gain I C = ma; V CE = 6 V 6 C c collector capacitance I E =i e = ; V CB =6V; f=mhz.4 pf C e emitter capacitance I C =i c = ; V EB =. V; f = MHz.4 pf C re feedback capacitance I C = ; V CB = 6 V; f = MHz.3 pf f T transition frequency I C = ma; V CE = 6 V; f = GHz; 9 GHz T amb = C G UM maximum unilateral power gain; note I C = ma; V CE =6V; T amb = C; f = 9 MHz 7 db f = GHz db S insertion power gain I C = ma; V CE = 6 V; f = 9 MHz; 3 4 db T amb = C F noise figure Γ s = Γ opt ; I C =. ma; V CE =6V;..7 db f = 9 MHz; T amb = C Γ s = Γ opt ; I C = ma; V CE =6V;.6. db f = 9 MHz; T amb = C Γ s = Γ opt ; I C =. ma; V CE =6V; f = GHz; T amb = C.9 db P L output power at db gain compression I C = ma; V CE =6V; R L =Ω; f = 9 MHz; T amb = C Notes. G UM is the maximum unilateral power gain, assuming S is zero and 4 dbm ITO third-order intercept point note dbm G UM S = log --------------------------------------------------------- db ( S )( S ). I C = ma; V CE = 6 V; R L =Ω; f = 9 MHz; T amb = C; f p = 9 MHz; f q = 9 MHz; measured at f (p-q) = 898 MHz and at f (q-p) = 94 MHz. May 7 4
BFRT handbook, halfpage h FE MRC9 handbook,. halfpage Cre (pf) MRC.4.3.. 3 I C (ma) 4 6 8 V CB (V) V CE = 6 V; T j = C. I C = ; f = MHz. Fig.3 DC current gain as a function of collector current. Fig.4 Feedback capacitance as a function of collector-base voltage. handbook, f halfpage T (GHz) VCE = 8 V MRC3 8 3 V 6 4 I C (ma) f = GHz; T amb = C. Fig. Transition frequency as a function of collector current. May 7
BFRT In Figs 6 to 9, G UM = maximum unilateral power gain; MSG = maximum stable gain; G max = maximum available gain. handbook, halfpage gain (db) GUM MRC6 handbook, halfpage gain (db) MRC7 MSG MSG Gmax GUM 4 6 8 I C (ma) V CE = 6 V; f = 9 MHz; T amb = C. Fig.6 Gain as a function of collector current. 4 6 8 I C (ma) V CE = 6 V; f = GHz; T amb = C. Fig.7 Gain as a function of collector current. handbook, halfpage gain (db) 4 GUM MRC handbook, halfpage gain (db) 4 GUM MRC4 3 3 MSG MSG Gmax G max f (GHz) f (GHz) I C =. ma; V CE = 6 V; T amb = C. Fig.8 Gain as a function of frequency. I C = ma; V CE = 6 V; T amb = C. Fig.9 Gain as a function of frequency. May 7 6
BFRT 4 handbook, halfpage F (db) MRC8 4 handbook, halfpage F (db) MRC 3 3 f = GHz I C = ma. ma 9 MHz MHz I C (ma) f (GHz) V CE = 6 V; T amb = C. Fig. Minimum noise figure as a function of collector current. V CE = 6 V; T amb = C. Fig. Minimum noise figure as a function of frequency. handbook, full pagewidth pot. unst. region 9. 3. 4.8.6 stability circle. F min =. db.4. 8.. Γ OPT F =. db F = db. F = 3 db 3. 4 I C =. ma; V CE =6V; f = 9 MHz; Z o =Ω. 9 MRC73. Fig. Noise circle. May 7 7
BFRT handbook, full pagewidth 9. 3. F = 4 db F = 3 db F =. db 4.8.6. F min =.9 db Γ OPT.4. 8... 3. 4 MRC74. I C =. ma; V CE =6V; f = GHz; Z o =Ω. 9 Fig.3 Noise circle. handbook, full pagewidth 9. 3. 4.8.6..4. 8.. 3 GHz 4 MHz. 3. 4 MRC6. I C = ma; V CE =6V; Z o =Ω. 9 Fig.4 Common emitter input reflection coefficient (S ). May 7 8
BFRT handbook, full pagewidth 9 3 4 4 MHz 8 9 6 3 3 GHz 3 4 9 MRC7 I C = ma; V CE =6V. Fig. Common emitter forward transmission coefficient (S ). handbook, full pagewidth 9 3 4 3 GHz 8..4.3.. 4 MHz 3 4 9 MRC8 I C = ma; V CE =6V. Fig.6 Common emitter reverse transmission coefficient (S ). May 7 9
BFRT handbook, full pagewidth 9. 3. 4.8.6..4. 8.. 4 MHz. 3 GHz 3. 4 I C = ma; V CE =6V; Z o =Ω. 9 MRC9. Fig.7 Common emitter output reflection coefficient (S ). May 7
BFRT PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT46 D B E A X v M A H E 3 Q A A c e bp w M B e Lp detail X. mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max mm.9..6 bp c D E e e H E L p Q v w.3....8.4.9.7..7.4.4..3.3.. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT46 SC-7 97--8 May 7
BFRT DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS () Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 634). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. May 7
BFRT NOTES May 7 3
BFRT NOTES May 7 4
BFRT NOTES May 7
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