EE 330 Lecture 20. Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling

Similar documents
EE 330 Lecture 26. Amplifier Biasing (precursor) Two-Port Amplifier Model

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers

EE 230 Fall 2006 Experiment 11. Small Signal Linear Operation of Nonlinear Devices

EE 330 Laboratory 8 Discrete Semiconductor Amplifiers

EE 330 Lecture 28. Comparison of MOS and BJT performance Basic amplifier architectures

EE 330 Lecture 21. Bipolar Process Flow

BJT Amplifier. Superposition principle (linear amplifier)

EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017

EE105 Fall 2015 Microelectronic Devices and Circuits

The shape of the waveform will be the same, but its level is shifted either upward or downward. The values of the resistor R and capacitor C affect

Gechstudentszone.wordpress.com

Course Outline. 4. Chapter 5: MOS Field Effect Transistors (MOSFET) 5. Chapter 6: Bipolar Junction Transistors (BJT)

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING III SEMESTER EC 6304 ELECTRONIC CIRCUITS I. (Regulations 2013)

Lecture 3: Transistors

EE 330 Lecture 24. Amplification with Transistor Circuits Small Signal Modelling

ECE 334: Electronic Circuits Lecture 2: BJT Large Signal Model

Week 12: Output Stages, Frequency Response

Chapter 5 Transistor Bias Circuits

INTRODUCTION TO ELECTRONICS EHB 222E

Experiment 5 Single-Stage MOS Amplifiers

Week 9a OUTLINE. MOSFET I D vs. V GS characteristic Circuit models for the MOSFET. Reading. resistive switch model small-signal model

UNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press

ECE315 / ECE515 Lecture 9 Date:

EEE118: Electronic Devices and Circuits

Lecture 030 ECE4430 Review III (1/9/04) Page 030-1

Chapter 8. Field Effect Transistor

EE 330 Laboratory 9. Semiconductor Parameter Measurement and Thyristor Applications

Bipolar Junction Transistors

BJT Circuits (MCQs of Moderate Complexity)

Electronic Circuits for Mechatronics ELCT 609 Lecture 7: MOS-FET Amplifiers

EE 434 Lecture 22. Properties of Bipolar Devices

F7 Transistor Amplifiers

Phy 335, Unit 4 Transistors and transistor circuits (part one)

EE5310/EE3002: Analog Circuits. on 18th Sep. 2014

Experiment #6 MOSFET Dynamic circuits

IC design for wireless system

Lecture 20 Transistor Amplifiers (II) Other Amplifier Stages

EE 435. Lecture 6: Current Mirrors Signal Swing

UNIT I - TRANSISTOR BIAS STABILITY

I C I E =I B = I C 1 V BE 0.7 V

Common-Emitter Amplifier

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

ECE 442 Solid State Devices & Circuits. 15. Differential Amplifiers

Integrated Circuit Amplifiers. Comparison of MOSFETs and BJTs

Lecture (01) Transistor operating point & DC Load line

4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

Electronic Circuits II - Revision

Chapter 6. BJT Amplifiers

12/01/2009. Practice with past exams

Chapter 4 Single-stage MOS amplifiers

Paper-1 (Circuit Analysis) UNIT-I

Linear electronic. Lecture No. 1

Chapter 8 Differential and Multistage Amplifiers

GATE SOLVED PAPER - IN

By: Dr. Ahmed ElShafee

Digital Electronics. Assign 1 and 0 to a range of voltage (or current), with a separation that minimizes a transition region. Positive Logic.

(a) BJT-OPERATING MODES & CONFIGURATIONS

500K V C C 1 R 1. V OUT (t) M 1 -2V

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Lecture 19 Transistor Amplifiers (I) Common Source Amplifier. November 15, 2005

Improving Amplifier Voltage Gain

ECE315 / ECE515 Lecture 5 Date:

EE 508 Lecture 28. Integrator Design. Alaising in SC Circuits Elimination of redundant switches Switched Resistor Integrators

Transistor Biasing and Operational amplifier fundamentals. OP-amp Fundamentals and its DC characteristics. BJT biasing schemes

EE 434 Lecture 21. MOS Amplifiers Bipolar Devices

Transistor Biasing. DC Biasing of BJT. Transistor Biasing. Transistor Biasing 11/23/2018

Figure1: Basic BJT construction.

Lecture 16: Small Signal Amplifiers

Electronic Circuits ELCT604 (Spring 2018) Lecture 2 BJT Amplifiers

DC Bias. Graphical Analysis. Script

55:041 Electronic Circuits

MOSFET Terminals. The voltage applied to the GATE terminal determines whether current can flow between the SOURCE & DRAIN terminals.

By: Dr. Ahmed ElShafee

EECE2412 Final Exam. with Solutions

E84 Lab 3: Transistor

Electronic Circuits for Mechatronics ELCT 609 Lecture 5: BJT Voltage Amplifiers

Subject Code: Model Answer Page No: / N

55:041 Electronic Circuits

MOS Field-Effect Transistors (MOSFETs)

Analog Integrated Circuit Design Exercise 1

ANALYSIS OF AN NPN COMMON-EMITTER AMPLIFIER

UNIT 4 BIASING AND STABILIZATION

The Bipolar Junction Transistor- Small Signal Characteristics

ES 330 Electronics II Homework # 2 (Fall 2016 Due Wednesday, September 7, 2016)

Chapter 15 Goals. ac-coupled Amplifiers Example of a Three-Stage Amplifier

Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi

2. SINGLE STAGE BIPOLAR JUNCTION TRANSISTOR (BJT) AMPLIFIERS

Lecture 13. Biasing and Loading Single Stage FET Amplifiers. The Building Blocks of Analog Circuits - III

EE 435. Lecture 24. Offset Voltages Common Mode Feedback Circuits

Analog Circuits Prof. Jayanta Mukherjee Department of Electrical Engineering Indian Institute of Technology - Bombay

Course Number Section. Electronics I ELEC 311 BB Examination Date Time # of pages. Final August 12, 2005 Three hours 3 Instructor

Small signal ac equivalent circuit of BJT

EEE118: Electronic Devices and Circuits

PHYS225 Lecture 6. Electronic Circuits

Microelectronics Exercises of Topic 5 ICT Systems Engineering EPSEM - UPC

Electronics Lab. (EE21338)

ECE 2C Final Exam. June 8, 2010

COE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline

FET, BJT, OpAmp Guide

output passes full first (positive) hump and 1/2-scale second hump

Transcription:

EE 330 Lecture 20 Operating Points for Amplifier Applications Amplification with Transistor Circuits Small Signal Modelling

Review from Last Lecture Simplified Multi-Region Model Alternate equivalent model I C βi B JSA IB β V 1 V E e V CE BE V t AF V BE >0.4V V BC <0 Forward Active V t kt q V BE =0.7V V CE =0.2V I C <βi B Saturation I C =I B =0 V BE <0 V BC <0 Cutoff A small portion of the operating region is missed with this model but seldom operate in the missing region

Review from Last Lecture Simplified Multi-Region dc Model Equivalent Simplified Multi-Region Model I C βi B VBE 0.6V V t kt q V BE >0.4V V BC <0 Forward Active V BE =0.7V V CE =0.2V I C <βi B Saturation I C =I B =0 V BE <0 V BC <0 Cutoff A small portion of the operating region is missed with this model but seldom operate in the missing region

Review from Last Lecture Safe regions of operation Simplified Forward Saturation Saturation V BE Melt Down!! Forward Active Saturation 0.4V V BC 0.4V Cutoff Reverse Active

Review from Last Lecture Sufficient regions of operation for most applications V BE Simplified Forward Saturation Saturation Forward Active 0.4V 0.4V V BC Cutoff Reverse Active

Modeling of the MOSFET Goal: Obtain a mathematical relationship between the port variables of a device. I f V,V,V I I D G B 1 f f 2 3 GS DS BS VGS,V DS,VBS V GS,V DS,VBS Drain V DS I D I B Gate Bulk I D Simple dc Model V GS V BS Small Signal Better Analytical dc Model Sophisticated Model for Computer Simulations Frequency Dependent Small Signal Simpler dc Model

Small-Signal Operation Output Range Q Q-point Input Range Q Throughout the small input range, the distant nonlinearities do not affect performance

Small-Signal Operation Output Range Q Q-point Input Range Q If slope is steep, output range can be much larger than input range The slope can be viewed as the voltage gain of the circuit Nonlinear circuit behaves as a linear circuit near Q-point with small-signal inputs

Small signal operation of nonlinear circuits =V M sinωt Nonlinear Circuit =? V M is small VM t -VM Small signal concepts often apply when building amplifiers If small signal concepts do not apply, usually the amplifier will not perform well Small signal operation is usually synonymous with locally linear Small signal operation is relative to an operating point

Operating Point of Electronic Circuits Often interested in circuits where a small signal input is to be amplified The electrical port variables where the small signal goes to 0 is termed the Operating Point, the Bias Point, the Quiescent Point, or simply the Q-Point By setting the small signal to 0, it means replacing small voltage inputs with short circuits and small current inputs with open circuits When analyzing small-signal amplifiers, it is necessary to obtain the Q-point When designing small-signal amplifiers, establishing of the desired Q-point is termed biasing Capacitors become open circuits (and inductors short circuits) when determining Q-points Simplified dc models of the MOSFET (saturation region) or BJT (forward active region) are usually adequate for determining the Q-point in practical amplifier circuits DC voltage and current sources remain when determining Q-points Small-signal voltage and current sources are set to 0 when determining Q-points

Operating Point of Electronic Circuits R 2 4V V in R 1 V DD V out R 1 (t) 200K 4K V DD =8V C 2 V SS (t) A E=100μ 2 V CQ =? 4K -2V 2K C 1 C 2 V(t)=V Msin(ωt+θ) R 1 R 2 V DD V DD =8V 8V 3V V(t)=VMsin(ωt+θ) R 3 R 1 M 1 C 1 R 4 30K 6K V SQ =? C 2 4K R 2 C 2 V SS 200K 60K

Operating Point Analysis of MOS and Bipolar Devices Example: Determine Q and V CQ V DD =9V 50K 1K C 1 C 2 4K V(t)=V M sin(ωt+θ) 25K 1K C 3 Will formally go through the process in this example, will go into more detail about finding the operating point later

Operating Point Analysis of MOS and Bipolar Devices Example: Determine Q and V CQ V DD =9V 50K 1K V DD =9V 4K 50K 1K V CQ Q 25K 1K B 0.6V I B βi B C 4K E C B I B C 25K 1K B 0.6V βi B E E

Operating Point Analysis of MOS and Bipolar Devices Example: Determine Q and V CQ V DD =9V Assume β=100 Assume I B <<I 1 (must verify) 50K I 1 B 0.6V I B 1K βi B V CQ C I RL R L 4K Q V BQ 9V 3 3V V 3V 0.6V 2.4V EQ 2.4V IEQ ICQ 2.4mA 1K V 9V I 1K 9V 2.4V 6.6V CQ CQ E V I 4K 0V OUTQ RL 25K 1K V CQ =6.6V Q =0V

Amplification with Transistors From Wikipedia: (approx. 2010) Generally, an amplifier or simply amp, is any device that changes, usually increases, the amplitude of a signal. The "signal" is usually voltage or current. From Wikipedia: (Oct. 2015) An amplifier, electronic amplifier or (informally) amp is an electronic device that increases the power of a signal. What is the power of a signal?

Signal and Power Levels R S R S RL R L R 1 R 2 R S P RL <P VIN R L <

Signal and Power Levels R S R 1 R 2 R S R L R L R S R 1 R 2 R L P RL <P VIN <

Amplification with Transistors From Wikipedia: (Oct. 2015) An amplifier, electronic amplifier or (informally) amp is an electronic device that increases the power of a signal. It is difficult to increase the voltage or current very much with passive RC circuits Voltage and current levels can be increased a lot with transformers but not practical in integrated circuits Power levels can not be increased with passive elements (R, L, C, and Transformers) Often an amplifier is defined to be a circuit that can increase power levels (be careful with Wikipedia and WWW even when some of the most basic concepts are discussed) Transistors can be used to increase not only signal levels but power levels to a load In transistor circuits, power that is delivered in the signal path is supplied by a biasing network

Amplification with Transistors VIN + - Amplifier RL + - VOUT Usually the gain of an amplifier is larger than 1 V OUT = AVVIN Often the power dissipated by R L is larger than the power supplied by An amplifier can be thought of as a dependent source that was discussed in EE 201 Input and output variables can be either V or I or mixed

Applications of Devices as Amplifiers I C, I D Logic Circuits Linear Circuits C Logic Circuits Typical Regions of Operation by Circuit Function MOS Bipolar Triode and Cutoff Saturation and Cutoff V CE,V DS Linear Circuits Saturation Forward Active

Consider the following MOSFET and BJT Circuits BJT MOSFET V CC R V DD R 1 Q 1 M 1 (t) (t) V EE V SS Assume BJT operating in FA region, MOSFET operating in Saturation Assume same quiescent output voltage and same resistor R 1 Note architecture is same for BJT and MOSFET circuits One of the most widely used amplifier architectures

Consider the following MOSFET and BJT Circuits BJT V CC R 1 MOSFET V DD R 1 (t) Q 1 (t) M 1 V EE V SS MOS and BJT Architectures often Identical Circuit are Highly Nonlinear Nonlinear Analysis Methods Must be used to analyze these and almost any other nonlinear circuit

Methods of Analysis of Nonlinear Circuits KCL and KVL apply to both linear and nonlinear circuits Superposition, voltage divider and current divider equations, Thevenin and Norton equivalence apply only to linear circuits! Some other analysis techniques that have been developed may apply only to linear circuits as well

Methods of Analysis of Nonlinear Circuits Will consider three different analysis requirements and techniques for some particularly common classes of nonlinear circuits 1. Circuits with continuously differential devices Interested in obtaining transfer characteristics of these circuits or outputs for given input signals 2. Circuits with piecewise continuous devices Interested in obtaining transfer characteristics of these circuits or outputs for a given input signals 3. Circuits with small-signal inputs that vary around some operating point Interested in obtaining relationship between small-signal inputs and the corresponding small-signal outputs. Will assume these circuits operate linearly in some suitably small region around the operating point Other types of nonlinearities may exist and other types of analysis may be required but we will not attempt to categorize these scenarios in this course

1. Nonlinear circuits with continuously differential devices Analysis Strategy: Use KVL and KCL for analysis Represent nonlinear models for devices either mathematically or graphically Solve the resultant set of nonlinear and linear equations for the variables of interest

2. Circuits with piecewise continuous devices e.g. f x Analysis Strategy: f x x x 1 1 f x x x 2 1 Guess region of operation region 1 region 2 Solve resultant circuit using the previous method Verify region of operation is valid Repeat the previous 3 steps as often as necessary until region of operation is verified It helps to guess right the first time but a wrong guess will not result in an incorrect solution because a wrong guess can not be verified Piecewise models generally result in a simplification of the analysis of nonlinear circuits

Determine boundary of region where small signal analysis is valid 3. Circuits with small-signal inputs that vary around some operating point Interested in obtaining relationship between small-signal inputs and the corresponding small-signal outputs. Will assume these circuits operate linearly in some suitably small region around the operating point Analysis Strategy: Use methods from previous class of nonlinear circuits More Practical Analysis Strategy: Determine the operating point (using method 1 or 2 discussed above after all small signal independent inputs are set to 0) Develop small signal (linear) model for all devices in the region of interest (around the operating point or Q-point ) Create small signal equivalent circuit by replacing all devices with small-signal equivalent Solve the resultant small-signal (linear) circuit Can use KCL, DVL, and other linear analysis tools such as superposition, voltage and current divider equations, Thevenin and Norton equivalence

Small signal operation of nonlinear circuits =V M sinωt Nonlinear Circuit V M is small If V M is sufficiently small, then any nonlinear circuit operating at a region where there are no abrupt nonlinearities will have a nearly sinusoidal output and the variance of the magnitude of this output with V M will be nearly linear (could be viewed as locally linear ) This is termed the small signal operation of the nonlinear circuit When operating with small signals, the nonlinear circuit performs linearly with respect to these small signals thus other properties of linear networks such as superposition apply provided the sum of all superimposed signals remains sufficiently small Other types of small signals, e.g. square waves, triangular waves, or even arbitrary waveforms often are used as inputs as well but the performance of the nonlinear network also behaves linearly for these inputs Many useful electronic systems require the processing of these small signals Practical methods of analyzing and designing circuits that operate with small signal inputs are really important

Small signal operation of nonlinear circuits =V M sinωt Nonlinear Circuit V M is small Practical methods of analyzing and designing circuits that operate with small signal inputs are really important Two key questions: How small must the input signals be to obtain locally-linear operation of a nonlinear circuit? How can these locally-linear (alt small signal) circuits be analyzed and designed?

Consider the following MOSFET and BJT Circuits BJT V CC R 1 MOSFET V DD R 1 (t) Q 1 (t) M 1 V EE V SS One of the most widely used amplifier architectures

Small signal operation of nonlinear circuits =V M sinωt Nonlinear Circuit V M is small Example of circuit that is widely used in locally-linear mode of operation R V DD VM t -VM M 1 Two methods of analyzing locally-linear circuits will be considered, one of these is by far the most practical V SS

Small signal operation of nonlinear circuits =V M sinωt Nonlinear Circuit V M is small Two methods of analyzing locally-linear circuits for small-signal excitaions will be considered, one of these is by far the most practical 1. Analysis using nonlinear models 2. Small signal analysis using locally-linearized models

Small signal analysis using nonlinear models R V DD By selecting appropriate value of V SS, M 1 will operate in the saturation region Assume M 1 operating in saturation region V M t M 1 V SS =V M sinωt V M is small V OUT -V M V V DD =V -I R OUT DD D μc W 2L μcox W 2L 2 OX I V -V -V D IN SS T I μc W 2L V DQ M μ COX W 2L 2 OX V V V -V -V R OUT DD IN SS T sin t V SS Termed Load Line V V 2 V SS T 2 R T

Small signal analysis example =V M sinωt V M is small R V DD M 1 V V OUT OUT V V DD DD μcox W 2L μcoxw 2L V V SS M sin t V T V SS V T 2 VM sin t 1- VSS VT 2 R 2 R V SS Recall that if x is small 1+x 2 1+2x μcoxw 2 2VM sin t VOUT VDD VSS VT 1- R 2L VSS VT μc W μc W 2V sint 2 2 OX OX M V OUT V V V R DD SS T V V R SS T 2L 2L V V SS T μc W 2 μc W OX 2L L OX V V V V R V V R V sint OUT DD SS T SS T M

Small signal analysis example =V M sinωt R V DD By selecting appropriate value of V SS, M 1 will operate in the saturation region M 1 Assume M 1 operating in saturation region V SS μc W 2 μc W OX 2L L OX V V V V R V V R V sint OUT DD SS T SS T M

Small signal analysis example R V DD Assume M 1 operating in saturation region =V M sinωt M 1 V SS μc W 2 μc W OX 2L L OX V V V V R V V R V sint OUT DD SS T SS T M Quiescent Output μc W L OX A V V R v SS T μc W 2L 2 OX V V V V R OUTQ DD SS T OUT OUTQ V M ss Voltage Gain V V A V sin t Note the ss voltage gain is negative since V SS +V T <0!

Small signal analysis example R V DD Assume M 1 operating in saturation region =V M sinωt M 1 V SS V V A V sin t OUT OUTQ V M μc W L OX A V V R v SS T μc W 2L 2 OX V V V V R OUTQ DD SS T But this expression gives little insight into how large the gain is! And the analysis for even this very simple circuit was messy!

Small signal analysis example =V M sinωt R V DD V V A V sin t OUT OUTQ V M M 1 VM t -VM V SS V DD V OQ V M =0 t V SS

R V DD M 1 V SS Small signal analysis example =V M sinωt OX v SS T V DD VM -VM V V A V sin t OUT OUTQ V M μc W A V V R L t V OQ V M t V SS

R V DD M 1 V SS Small signal analysis example =V M sinωt OX v SS T V DD VM -VM V V A V sin t OUT OUTQ V M μc W A V V R L t V OQ V M t V SS

=V M sinωt R V DD M 1 V SS Small signal analysis example VM -VM V V A V sin t OUT OUTQ V M μc W L OX ta V V R v SS T V DD V OQ V M t V SS Serious Distortion occurs if signal is too large or Q-point non-optimal Here clipping occurs for high

=V M sinωt R V DD M 1 V SS Small signal analysis example VM -VM V DD V V A V sin t OUT OUTQ V M μc W L OX A V V R v SS T t V OQ V M t V SS Serious Distortion occurs if signal is too large or Q-point non-optimal Here clipping occurs for low

End of Lecture 20