R6011KNJ Nch 600V 11A Power MOSFET Datasheet loutline V DSS 600V TO-263 R DS(on) (Max.) 0.39Ω SC-83 I D ±11A LPT(S) P D 124W lfeatures 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant linner circuit lpackaging specifications Packing Embossed Tape Reel size (mm) 330 lapplication Type Tape width (mm) 24 Switching Basic ordering unit (pcs) 1000 labsolute maximum ratings (T a = 25 C,unless otherwise specified) Taping code Marking TL R6011KNJ Parameter Symbol Value Unit Drain - Source voltage V DSS 600 V Continuous drain current (T c = 25 C) I D *1 ±11 A Pulsed drain current I DP *2 ±33 A Gate - Source voltage static ±20 V V GSS AC(f>1Hz) ±30 V Avalanche current, single pulse I AS 1.8 A Avalanche energy, single pulse E AS *3 210 mj Power dissipation (T c = 25 C) P D 124 W Junction temperature T j 150 Operating junction and storage temperature range T stg -55 to +150 2015 ROHM Co., Ltd. All rights reserved. 1/12 20150911 - Rev.001
lthermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case R thjc *4 - - 1.0 /W Thermal resistance, junction - ambient R thja *5 - - 80 /W Soldering temperature, wavesoldering for 10s T sold - - 265 lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V (BR)DSS V GS = 0V, I D = 1mA 600 - - V Zero gate voltage drain current V DS = 600V, V GS = 0V I DSS T j = 25 C - - 100 T j = 125 C - - 1000 Gate - Source leakage current I GSS V GS = ±20V, V DS = 0V - - ±100 na Gate threshold voltage V GS(th) V DS = 10V, I D = 1mA 3-5 V Static drain - source on - state resistance R DS(on) *6 V GS = 10V, I D = 3.8A T j = 25 C - 0.34 0.39 T j = 125 C - 0.72 - Gate resistance R G f = 1MHz, open drain - 1.5 - Ω μa Ω 2015 ROHM Co., Ltd. All rights reserved. 2/12 20150911 - Rev.001
lelectrical characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Forward Transfer Admittance Y fs *6 V DS = 10V, I D = 5.5A 2.9 5.8 - S Input capacitance C iss V GS = 0V - 740 - Output capacitance C oss V DS = 25V - 630 - Reverse transfer capacitance C rss f = 1MHz - 30 - Turn - on delay time t *6 d(on) V DD 300V, V GS = 10V - 20 - Rise time t *6 r I D = 5.5A - 25 - Turn - off delay time t *6 d(off) R L 54.9Ω - 40 - Fall time t *6 f R G = 10Ω - 20 - pf ns lgate charge characteristics (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Total gate charge Q *6 g V DD 300V - 22 - Gate - Source charge Q *6 gs I D = 11A - 6 - nc Gate - Drain charge Q *6 gd V GS = 10V - 10 - Gate plateau voltage V (plateau) V DD 300V, I D = 11A - 6.7 - V *1 Limited only by maximum channel temperature allowed. *2 Pw 10μs, Duty cycle 1% *3 L 100mH, V DD =50V, R G =25Ω, STARTING T j =25 *4 T C =25 *5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm) *6 Pulsed 2015 ROHM Co., Ltd. All rights reserved. 3/12 20150911 - Rev.001
lbody diode electrical characteristics (Source-Drain) (T a = 25 C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Continuous forward current I S *1 T C = 25 - - 11 A Pulse forward current I SP *2 - - 33 A Forward voltage V SD *6 V GS = 0V, I S = 11A - - 1.5 V Reverse recovery time t *6 rr - 355 - ns Reverse recovery charge Q *6 rr I S = 11A di/dt = 100A/μs - 3.8 - μc Peak reverse recovery current I *6 rrm - 22 - A ltypical transient thermal characteristics Symbol Value Unit Symbol Value Unit R th1 0.118 C th1 0.00134 R th2 0.470 K/W C th2 0.00425 Ws/K R th3 0.623 C th3 0.165 2015 ROHM Co., Ltd. All rights reserved. 4/12 20150911 - Rev.001
lelectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Avalanche Energy Derating Curve vs. Junction Temperature 2015 ROHM Co., Ltd. All rights reserved. 5/12 20150911 - Rev.001
lelectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 2015 ROHM Co., Ltd. All rights reserved. 6/12 20150911 - Rev.001
lelectrical characteristic curves Fig.6 Breakdown Voltage vs. Junction Temperature Fig.7 Typical Transfer Characteristics Fig.8 Gate Threshold Voltage vs. Junction Temperature Fig.9 Forward Transfer Admittance vs. Drain Current 2015 ROHM Co., Ltd. All rights reserved. 7/12 20150911 - Rev.001
lelectrical characteristic curves Fig.10 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.11 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.12 Static Drain - Source On - State Resistance vs. Drain Current(l) 2015 ROHM Co., Ltd. All rights reserved. 8/12 20150911 - Rev.001
lelectrical characteristic curves Fig.13 Typical Capacitance vs. Drain - Source Voltage Fig.14 Switching Characteristics Fig15 Dynamic Input Characteristics 2015 ROHM Co., Ltd. All rights reserved. 9/12 20150911 - Rev.001
lelectrical characteristic curves Fig.16 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.17 Reverse Recovery Time vs. Inverse Diode Forward Current 2015 ROHM Co., Ltd. All rights reserved. 10/12 20150911 - Rev.001
lmeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 dv/dt Measurement Circuit Fig.5-2 dv/dt Waveform 2015 ROHM Co., Ltd. All rights reserved. 11/12 20150911 - Rev.001
ldimensions 2015 ROHM Co., Ltd. All rights reserved. 12/12 20150911 - Rev.001
Datasheet R6011KNJ - Web Page Distribution Inventory Part Number R6011KNJ Package LPTS(D2PAK) Unit Quantity 1000 Minimum Package Quantity 1000 Packing Type Taping Constitution Materials List inquiry RoHS Yes