AOT2N65/AOTF2N65/AOB2N65 65V, 2A NChannel MOSFET General Description The AOT2N65 & AOTF2N65 & AOB2N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low R DS(on), C iss and C rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary V DS I D (at V GS =V) 75V@5 2A R DS(ON) (at V GS =V) <.72Ω % UIS Tested % R g Tested TO22 Top View TO22F TO263 D 2 PAK D D AOT2N65 G D S AOTF2N65 G D S G AOB2N65 S G S Orderable Part Number Package Type Form Minimum Order Quantity AOT2N65 TO22 Pb Free Tube AOTF2N65 TO22F Pb Free Tube AOTF2N65L TO22F Green Tube AOB2N65L TO263 Green Tape & Reel 8 Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Symbol AOT(B)2N65 AOTF2N65 DrainSource Voltage 65 GateSource Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C T C = C Repetitive avalanche energy C V DS V GS T C =25 C 2 I D I DM I AR E AR 7.7 ±3 2* 7.7* 48 5 375 AOTF2N65L Single plused avalanche energy G E AS 75 MOSFET dv/dt ruggedness 3 dv/dt Peak diode recovery dv/dt 5 Power Dissipation B T C =25 C 278 5 4 P Derate above 25 o D C 2.2.4.3 Junction and Storage Temperature Range Maximum lead temperature for soldering T J, T STG 55 to 5 purpose, /8" from case for 5 seconds Thermal Characteristics T L 3 Parameter Maximum JunctiontoAmbient A,D Maximum Casetosink A Maximum JunctiontoCase Symbol R θja R θcs R θjc AOT(B)2N65 65.5.45 AOTF2N65 65 2.5 AOTF2N65L 65 3. * Drain current limited by maximum junction temperature. 2* 7.7* Units V V A A mj mj V/ns W W/ o C C C Units C/W C/W C/W Rev.7.: December 24 www.aosmd.com Page of 6
Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS BV DSS / TJ I DSS DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current I D =25µA, V GS =V, T J =25 C I D =25µA, V GS =V, T J =5 C I D =25µA, V GS =V V DS =65V, V GS =V V DS =52V, T J =25 C 65 75.72 V/ o C I GSS GateBody leakage current V DS =V, V GS =±3V ± nα V GS(th) Gate Threshold Voltage V DS =5V I D =25µA 3 3.9 4.5 V R DS(ON) Static DrainSource OnResistance V GS =V, I D =6A.57.72 Ω g FS Forward Transconductance V DS =4V, I D =6A 7 S V SD Diode Forward Voltage I S =A,V GS =V.7 V I S Maximum BodyDiode Continuous Current 2 A I SM Maximum BodyDiode Pulsed Current 48 A DYNAMIC PARAMETERS C iss Input Capacitance 43 792 25 pf C oss Output Capacitance V GS =V, V DS =25V, f=mhz 2 52 85 pf C rss Reverse Transfer Capacitance 9.5 8 pf R g Gate resistance V GS =V, V DS =V, f=mhz.7 3.5 5.3 Ω SWITCHING PARAMETERS Q g Total Gate Charge 32 39.8 48 nc Q gs Gate Source Charge V GS =V, V DS =52V, I D =2A 7.5 9.2 nc Q gd Gate Drain Charge 3.5 6.8 2 nc t D(on) TurnOn DelayTime 36 ns t r TurnOn Rise Time V GS =V, V DS =325V, I D =2A, 77 ns t D(off) TurnOff DelayTime R G =25Ω 2 ns t f TurnOff Fall Time 63 ns t rr Body Diode Reverse Recovery Time I F =2A,dI/dt=A/µs,V DS =V 3 375 45 ns Q rr Body Diode Reverse Recovery Charge I F =2A,dI/dt=A/µs,V DS =V 6 7.5 9 µc A. The value of R θja is measured with the device in a still air environment with T A =25 C. B. The power dissipation P D is based on T J(MAX) =5 C, using junctiontocase thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =5 C, Ratings are based on low frequency and duty cycles to keep initial T J =25 C. D. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These curves are based on the junctiontocase thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =5 C. The SOA curve provides a single pulse rating. G. L=6mH, I AS =5A, V DD =5V, R G =25Ω, Starting T J =25 C V µa THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.7.: December 24 www.aosmd.com Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 24 2 V 6.5V V DS =4V 55 C 6 6V I D (A) 2 I D (A) 25 C 8 4 V GS =5.5V 25 C 5 5 2 25 3.2 Fig : OnRegion Characteristics. 2 4 6 8 3 V GS (Volts) Figure 2: Transfer Characteristics R DS(ON) (Ω)..8.6 V GS =V Normalized OnResistance 2.5 2.5.5 V GS =V I D =6A.4 5 5 2 25 I D (A) Figure 3: OnResistance vs. Drain Current and Gate Voltage.2 5 5 5 2 Temperature ( C) Figure 4: OnResistance vs. Junction Temperature.E2 BV DSS (Normalized)..9 I S (A).E.E.E.E2 2.2.E3 25 C 25 C.E4.8 5 5 5 2 T J ( o C) Figure 5: Break Down vs. Junction Temperature.E5..2.4.6.8. V SD (Volts) Figure 6: BodyDiode Characteristics (Note E) Rev.7.: December 24 www.aosmd.com Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 2 V DS =52V I D =2A C iss V GS (Volts) 9 6 3 Capacitance (pf) C oss C rss 2 3 4 5 6 Q g (nc) Figure 7: GateCharge Characteristics. Figure 8: Capacitance Characteristics I D (Amps).. R DS(ON) limited DC T J(Max) =5 C T C =25 C µs µs ms ms Figure 9: Maximum Forward Biased Safe Operating Area for AOT(B)2N65 (Note F) I D (Amps). R DS(ON) limited µs ms ms.s s. DC T J(Max) =5 C T C =25 C Figure : Maximum Forward Biased Safe Operating Area for AOTF2N65 (Note F) µs s 4 I D (Amps). R DS(ON) limited. DC T J(Max) =5 C T C =25 C Figure : Maximum Forward Biased Safe Operating Area for AOTF2N65L (Note F) µs µs ms ms.s s s Current rating I D (A) 2 8 6 4 2 25 5 75 25 5 T CASE ( C) Figure 2: Current Derating (Note B) Rev.7.: December 24 www.aosmd.com Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T c P DM.Z θjc.r θjc R θjc =.45 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse P DM T on T...... Pulse Width (s) Figure 3: Normalized Maximum Transient Thermal Impedance for AOT(B)2N65 (Note F) Z θjc Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T c P DM.Z θjc.r θjc R θjc =2.5 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse...... P DM T on T Pulse Width (s) Figure 4: Normalized Maximum Transient Thermal Impedance for AOTF2N65 (Note F) Z θjc Normalized Transient Thermal Resistance... D=T on /T T J,PK =T c P DM.Z θjc.r θjc R θjc =3. C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse....... Pulse Width (s) Figure 5: Normalized Maximum Transient Thermal Impedance for AOTF2N65L (Note F) P DM T on T Rev.7.: December 24 www.aosmd.com Page 5 of 6
Gate Charge Test Circuit & Waveform Qg V Qgs Qgd Ig Charge RL Resistive Switching Test Circuit & Waveforms Rg 9% % t d(on) t r t d(off) t f t on t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E = /2 LI AR AR BV DSS Id Rg Id I AR Diode Recovery Test Circuit & Waveforms Q = Idt rr Ig Isd L Isd I F di/dt I RM t rr Rev.7.: December 24 www.aosmd.com Page 6 of 6