Monolithically Integrated Thin-Film/Si Tandem Photoelectrodes

Similar documents
Sub 300 nm Wavelength III-Nitride Tunnel-Injected Ultraviolet LEDs

Supplementary Figure 1: Electron and hole distribution in a 100 nm diameter In 0.25 Ga 0.75 N

Graded P-AlGaN Superlattice for Reduced Electron Leakage in Tunnel- Injected UVC LEDs

Benchmarking Advanced Water Splitting Technologies. Presenter: Kathy Ayers November 15, 2017 HydroGEN Kickoff Meeting, NREL

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS

SILICON NANOWIRE HYBRID PHOTOVOLTAICS

Chemical Transformation of Carbon Dioxide via Solar-Powered Artificial Photosynthesis

What is the highest efficiency Solar Cell?

Gallium nitride (GaN)

Performance and Loss Analyses of High-Efficiency CBD-ZnS/Cu(In 1-x Ga x )Se 2 Thin-Film Solar Cells

Atomic-layer deposition of ultrathin gate dielectrics and Si new functional devices

Aluminum nitride nanowire light emitting diodes: Breaking the. fundamental bottleneck of deep ultraviolet light sources

Supplementary Information

Wafer-Scale Fabrication of Self-Catalyzed 1.7 ev GaAsP Core Shell Nanowire Photocathode on Silicon Substrates

Semiconductor Materials for Power Electronics (SEMPEL) GaN power electronics materials

Modelling and Analysis of Four-Junction Tendem Solar Cell in Different Environmental Conditions Mr. Biraju J. Trivedi 1 Prof. Surendra Kumar Sriwas 2

High-Speed Scalable Silicon-MoS 2 P-N Heterojunction Photodetectors

Advancing Consumer Packaging Through Printable Electronics

Coating of Si Nanowire Array by Flexible Polymer

SUPPORTING INFORMATION

SYNTHESIS AND ANALYSIS OF SILICON NANOWIRES GROWN ON Si (111) SUBSTRATE AT DIFFERENT SILANE GAS FLOW RATE

Quantum Condensed Matter Physics Lecture 16

Supplementary Information: Nanoscale. Structure, Dynamics, and Aging Behavior of. Metallic Glass Thin Films

1B John D. Cressler, Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press, 2009 ( Copyright 2

Semiconductor Optical Communication Components and Devices Lecture 18: Introduction to Diode Lasers - I

We are right on schedule for this deliverable. 4.1 Introduction:

knowledge generating NOVEL PULSED-DC TECHNOLOGY DUAL USAGE POWER SUPPLY Background The challenge: effective application of plasma power supply

Functional Materials. Optoelectronic devices

Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode

Light management in photovoltaics using nanotechnology

Hierarchical CoNiSe2 nano-architecture as a highperformance electrocatalyst for water splitting

HipoCIGS: enamelled steel as substrate for thin film solar cells

"Novel High Efficiency Photovoltaic Devices Based on the III-N Material System" January 28, 2005

Nanotechnology, the infrastructure, and IBM s research projects

Laboratoire des Matériaux Semiconducteurs, Ecole Polytechnique Fédérale de Lausanne, 1015

Resonant Tunneling Device. Kalpesh Raval

Thin film PV Technologies III- V PV Technology

Fabrication of High-Speed Resonant Cavity Enhanced Schottky Photodiodes

A Laser-Based Thin-Film Growth Monitor

Selective improvement of NO 2 gas sensing behavior in. SnO 2 nanowires by ion-beam irradiation. Supporting Information.

Silicon Carbide power devices: Status, challenges and future opportunities

Supporting Information

Surface Antireflection and Light Extraction Properties of GaN Microdomes

A scanning tunneling microscopy based potentiometry technique and its application to the local sensing of the spin Hall effect

UVISEL. Spectroscopic Phase Modulated Ellipsometer. The Ideal Tool for Thin Film and Material Characterization

10/14/2009. Semiconductor basics pn junction Solar cell operation Design of silicon solar cell

Electronic Supplementary Information. Self-assembled Gold Nanorime Mesh Conductor for Invisible Stretchable Supercapacitor

Electronic Supplementary Information:

Han Liu, Adam T. Neal, Yuchen Du and Peide D. Ye

Single-nanowire photoelectrochemistry

Fourier Transform Infrared (FTIR) spectroscopy (lecture)

Nanoscale Photon Management for Solar Energy Harvesting

PHYSICAL ELECTRONICS(ECE3540) APPLICATIONS OF PHYSICAL ELECTRONICS PART I

Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell

EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02

Supplementary Figure 1 High-resolution transmission electron micrograph of the

Supporting Information Content

IWN 2014: Conference Report

Theta (deg)

4H-SiC V-Groove Trench MOSFETs with the Buried p + Regions

Zinc Oxide Nanowires Impregnated with Platinum and Gold Nanoparticle for Ethanol Sensor

EECS130 Integrated Circuit Devices

S olar power, harvested by photovoltaic devices, is an abundant, clean, and renewable energy source. In recent

Vertical-cavity surface-emitting lasers (VCSELs)

Defense Technical Information Center Compilation Part Notice

Supplementary Figure 1 Reflective and refractive behaviors of light with normal

LEDs, Photodetectors and Solar Cells

Reconfigurable Si-Nanowire Devices

(a) (d) (e) (b) (c) (f) 3D-NAND Flash and Its Manufacturing Process

Hybrid photo-electrochemical and photo-voltaic cells (HPEV cells) Gideon Segev 1,2, Jeffery Beeman 1,2, Ian D. Sharp 1,2,3*

Design of input couplers for efficient silicon thin film solar absorbers

Analog Synaptic Behavior of a Silicon Nitride Memristor

Design and Performance of InGaAs/GaAs Based Tandem Solar Cells

Simulation of silicon based thin-film solar cells. Copyright Crosslight Software Inc.

Flexible IGZO TFTs deposited on PET substrates using magnetron radio frequency co-sputtering system

SUPPLEMENTARY INFORMATION

Power Semiconductor Devices - Silicon vs. New Materials. Si Power Devices The Dominant Solution Today

Nanowire solar water splitting

Nanoscale relative emission efficiency mapping using cathodoluminescence g (2) imaging

Mid-IR Resonant Cavity Detectors

Future MOSFET Devices using high-k (TiO 2 ) dielectric

Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress

Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea

Lecture 18: Photodetectors

Nanophotonics: Single-nanowire electrically driven lasers

Influence of dielectric substrate on the responsivity of microstrip dipole-antenna-coupled infrared microbolometers

Monolithically integrated InGaAs nanowires on 3D. structured silicon-on-insulator as a new platform for. full optical links

Silicon nanowires for solar-to-fuel conversion

- Near Field Scanning Optical Microscopy - Electrostatic Force Microscopy - Magnetic Force Microscopy

Radio-frequency scanning tunneling microscopy

Artificial photosynthesis has been considered

(Invited) Wavy Channel TFT Architecture for High Performance Oxide Based Displays

Zpulser LLC. Industry Proven HIPIMS/HPPMS Plasma Generators Based on MPP Technology.

SUPPLEMENTARY INFORMATION

Project full title: "Nanowire based Tandem Solar Cells" Project acronym: Nano-Tandem Grant agreement no: Deliverable D6.1:

Semiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in

HfO 2 Based Resistive Switching Non-Volatile Memory (RRAM) and Its Potential for Embedded Applications

Silicon on Insulator (SOI) Spring 2018 EE 532 Tao Chen

Supplementary information for: Surface passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon

Supporting Information. Single-Nanowire Electrochemical Probe Detection for Internally Optimized Mechanism of

Transcription:

Monolithically Integrated Thin-Film/Si Tandem Photoelectrodes Author Name: Zetian Mi Date: November 14, 2017 Venue: NREL s Energy Systems Integration Facility

HydroGEN Kick-Off Meeting MONOLITHICALLY INTEGRATED THIN-FILM/SILICON TANDEM PHOTOELECTRODES FOR HIGH EFFICIENCY AND STABLE PHOTOELECTROCHEMICAL WATER SPLITTING Zetian Mi, University of Michigan, Ann Arbor Thomas Hamann, Michigan State University Dunwei Wang, Boston College Yanfa Yan, University of Toledo Project Vision We propose to develop monolithically integrated thin-film/si tandem photoelectrodes to achieve both high efficiency (>15%) and stable (>1,000 hrs) water splitting systems. Project Impact Success of the project will help meet the DOE 2020 target (20% solar-to-hydrogen efficiency and $5.70 per kg H 2 ) and pave the way for widespread commercialization of solar hydrogen production technologies. Award # Year 1 Funding EE0008086 $250,000 HydroGEN: Advanced Water Splitting Materials 2

Innovation and Objectives Project history The applicants have had complementary expertise in PEC water splitting: Ta 3 N 5, BCTSSe, and InGaN top photoelectrodes with E g ~1.7-2 ev. Low resistivity nanowire tunnel junction on Si wafer. Ultrathin N-rich GaN coating against photocorrosion and oxidation. Proposed targets Metric STH Efficiency / Stability State of the Art 16% 1.5 hrs Proposed > 15% 1000 hrs Barriers Further improve the performance and stability of top photoelectrodes. Integration of the top photoelectrodes with the Si bottom light absorber through nanowire tunnel junction. Partnerships Thomas Hamann, Michigan State Univ.: Ta 3 N 5, PEC characterization Dunwei Wang, Boston College: Cocatalyst deposition, surface protection Yanfa Yan, Univ. Toledo: Sputtering deposition and PEC characterization of BCTSSe HydroGEN: Advanced Water Splitting Materials 3

In 0.5 Ga 0.5 N Ta 3 N 5 BCTSSe Silicon Hu, S. et al., Energy Environ. Sci., 6 (2013), 2984 2993. The use of Si substrate as the bottom light absorber to reduce the cost of PEC water splitting. The use of recently developed low cost Ta 3 N 5, BCTSSe, and In 0.5 Ga 0.5 N photoelectrodes as the top light absorber, which have a direct energy bandgap of 1.7-2.0 ev. HydroGEN: Advanced Water Splitting Materials 4

III-nitrides are the only known semiconductors whose energy band edges can straddle water redox potentials under deep visible and near- IR light. J. Mater. Chem. A, 4, 2801, 2016. Appl. Phys. Lett. 96, 021908 2010. HydroGEN: Advanced Water Splitting Materials 5

N-terminated surface protecting against corrosion and oxidation Ga polarity Unstable Difficult to extract holes N polarity Stable Efficient hole extraction HydroGEN: Advanced Water Splitting Materials 6

InGaN nanowires with various sizes and surface morphology can be grown, with energy bandgap tuned from the visible to the infrared. Advanced Energy Materials, vol. 7, 1600952, 2017. Advanced Functional materials, vol. 27, 1702364, 2017. HydroGEN: Advanced Water Splitting Materials 7

STEM reveals N-rich m-plane surfaces from MBE grown GaN Nanowires. The N-terminated surfaces of InGaN nanowires protect against photocorrosion and oxidation, leading to long-term stable operation in overall water splitting. Nature Commun., vol. 5, 3825, 2014. Nature Commun., vol. 6, 6797, 2015. Adv. Mater. vol. 28, 8388, 2016 HydroGEN: Advanced Water Splitting Materials 8

We will also develop both BCTSSe and Ta 3 N 5 thin films as efficient photocathodes and photoanodes for PEC water splitting. J (ma/cm 2 ) 30 25 20 15 10 5 n-ta 3 N 5 p-inp/tio 2 J ph = 9.93 ma/cm 2 STH=12.21% 0.0 0.2 0.4 0.6 0.8 1.0 1.2 E (V vs. RHE) HydroGEN: Advanced Water Splitting Materials 9

Nanowire tunnel junction will be used to connect to the the top light absorber (Ta 3 N 5, BCTSSe, or InGaN) with the Si bottom junction. The use of nanowire tunnel junction can further reduce the formation of defects and dislocations in the top light absorber. Advanced Energy Materials, vol. 7, 1600952, 2017. Nano Letters, vol. 15, 2721, 2016. HydroGEN: Advanced Water Splitting Materials 10

Effective Leveraging of the EMN Resource Nodes Glenn Teeter, NREL: Surface analysis cluster tool, surface measurements Francesca Toma, LBNL: Photoelectrochemical AFM and STM Todd Deutsch, NREL: Surface modifications and protection Tadashi Ogitsu, LLNL: Ab initio modeling of electrochemical interfaces HydroGEN: Advanced Water Splitting Materials 11

Thank you! Kibria et al. Nature Commun., vol. 6, 6797, 2015. HydroGEN: Advanced Water Splitting Materials 12