Low r S(on)... Ω Typ Output Short-Circuit Protection Avalanche Energy...75 mj Eight 35-mA MOS Outputs 5-V Switching Capability evices Are Cascadable Low Power Consumption description The TPIC6A595 is a monolithic, high-voltage, high-current power logic 8-bit shift register designed for use in systems that require relatively high load power. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power driver applications include relays, solenoids, and other medium-current or high-voltage loads. Each open-drain MOS transistor features an independent chopping current-limiting circuit to prevent damage in the case of a short circuit. This device contains an 8-bit serial-in, parallel-out shift register that feeds an 8-bit, -type storage register. ata transfers through both the shift and storage registers on the rising edge of the shiftregister clock () and the register clock (), respectively. The storage register transfers data to the output buffer when shiftregister clear () is high. When is low, the input shift register is cleared. When output SLIS5A APRIL 993 REVISE JANUARY 995 RAIN RAIN3 RAIN4 RAIN5 RAIN RAIN3 RAIN4 RAIN5 NE PACKAE (TOP VIEW) enable () is held high, all data in the output buffers is held low and all drain outputs are off. When is held low, data from the storage register is transparent to the output buffers. The serial output (SER OUT) allows for cascading of the data from the shift register to additional devices. Outputs are low-side, open-drain MOS transistors with output ratings of 5 V and a 35-mA continuous sink current capability. When data in the output buffers is low, the MOS-transistor outputs are off. When data is high, the MOS-transistor outputs have sink current capability. Separate power ground () and logic ground (LN) terminals are provided to facilitate maximum system flexibility. All terminals are internally connected, and each terminal must be externally connected to the power system ground in order to minimize parasitic impedance. A single-point connection between LN and must be made externally in a manner that reduces crosstalk between the logic and load circuits. The TPIC6A595 is offered in a thermally-enhanced dual-in-line (NE) package and a wide-body surface-mount (W) package. The TPIC6A595 is characterized for operation over the operating case temperature range of 4 C to 5 C. 3 4 5 6 7 8 9 3 4 5 6 7 8 9 9 8 7 6 5 4 3 W PACKAE (TOP VIEW) 4 3 9 8 7 6 5 4 3 RAIN RAN V CC LN SER OUT RAIN7 RAIN6 RAIN RAIN V CC LN SER OUT RAIN7 RAIN6 PROUCTION ATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright 995, Texas Instruments Incorporated POST OFFICE BOX 65533 ALLAS, TEXAS 7565
SLIS5A APRIL 993 REVISE JANUARY 995 logic symbol EN3 SR8 R 3 RAIN RAIN RAIN RAIN3 RAIN4 RAIN5 RAIN6 3 RAIN7 SER OUT This symbol is in accordance with ANSI/IEEE Std 9-984 and IEC Publication 67-. POST OFFICE BOX 65533 ALLAS, TEXAS 7565
SLIS5A APRIL 993 REVISE JANUARY 995 logic diagram (positive logic) RAIN RAIN RAIN Current Limit and Charge Pump RAIN3 RAIN4 RAIN5 RAIN6 RAIN7 SER OUT POST OFFICE BOX 65533 ALLAS, TEXAS 7565 3
SLIS5A APRIL 993 REVISE JANUARY 995 schematic of inputs and outputs TYPICAL OF SERIAL OUT EQUIVALENT OF EACH INPUT TYPICAL OF ALL RAIN OUTPUTS VCC VCC RAIN SER OUT Input V LN LN LN RSENSE absolute maximum ratings over recommended operating case temperature range (unless otherwise noted) Logic supply voltage, V CC (see Note )....................................................... 7 V Logic input voltage range, V I.........................................................3 V to 7 V Power MOS drain-to-source voltage, V S (see Note )........................................ 5 V Continuous source-drain diode anode current.................................................. A Pulsed source-drain diode anode current (see Note 3)........................................... A Pulsed drain current, each output, all outputs on, I n, T A = 5 C (see Note 3)...................... A Continuous drain current, each output, all outputs on, I n, T A = 5 C.......................... 35 ma Peak drain current, single output, T A = 5 C (see Note 3)....................................... A Single-pulse avalanche energy, E AS (see Figure 6)........................................... 75 mj Avalanche current, I AS (see Note 4)...................................................... 6 ma Continuous total dissipation........................................... See issipation Rating Table Operating case temperature range, T C............................................. 4 C to 5 C Operating virtual junction temperature range, T J..................................... 4 C to 5 C Storage temperature range, T stg................................................... 65 C to 5 C Lead temperature,6 mm (/6 inch) from case for seconds............................... 6 C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES:. All voltage values are with respect to LN and.. Each power MOS source is internally connected to. 3. Pulse duration µs and duty cycle %. 4. RAIN supply voltage =, starting junction temperature (TJS) = 5 C, L = mh, IAS = 6 ma (see Figure 6). PACKAE ISSIPATION RATIN TABLE TC 5 C POWER RATIN ERATIN FACTOR ABOVE TC = 5 C TC = 5 C POWER RATIN W 75 mw 4 mw/ C 35 mw NE 5 mw mw/ C 5 mw 4 POST OFFICE BOX 65533 ALLAS, TEXAS 7565
SLIS5A APRIL 993 REVISE JANUARY 995 recommended operating conditions MIN MAX UNIT Logic supply voltage, VCC 4.5 5. High-level input voltage, VIH.8CC VCC V Low-level input voltage, VIL.CC V Pulsed drain output current, TC = 5 C, VCC = (see Notes 3 and 5).8.6 A Setup time, high before, tsu (see Figure ) ns Hold time, high after, th (see Figure ) ns Pulse duration, tw (see Figure ) ns Operating case temperature, TC 4 5 C electrical characteristics, V CC =, T C = 5 C (unless otherwise noted) V(BR)SX VS PARAMETER TEST CONITIONS MIN TYP MAX UNIT rain-to-source breakdown voltage Source-to-drain diode forward voltage I = ma 5 V IF = 35 ma, See Note 3.8. V VOH VOL High-level output voltage, IOH = µa VCC. VCC SER OUT IOH = 4 ma VCC.CC. Low-level output voltage, IOL = µa. SER OUT IOL = 4 ma..5 IIH High-level input current VI = VCC µa IIL Low-level input current VI = µa IO(chop) Output current at which chopping starts TC = 5 C, See Note 5 and Figures 3 and 4 V V.6.8. A ICC Logic supply current IO =, VI = VCC or.5 5 ma ICC(FRQ) I(nom) I Logic supply current at frequency Nominal current rain current, off-state Static drain-source on-state rs(on) ( resistance f = 5 MHz, IO =, CL = 3 pf, VI = VCC or, VCC =, See Figure 7 VS(on) =., I(nom) = I, TC = 85 C, VCC =, See Notes 5, 6, and 7.3 ma 35 ma VS = 4 V, TC = 5 C. VS = 4 V, TC = 5 C. 5 I = 35 ma, TC = 5 C I = 35 ma, TC = 5 C I = 35 ma, TC = 4 C See Notes 5 and 6 and Figures and.5 µa.7.5 Ω NOTES: 3. Pulse duration µs and duty cycle %. 5. Technique should limit TJ TC to C maximum. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. 7. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of. at TC = 85 C. POST OFFICE BOX 65533 ALLAS, TEXAS 7565 5
SLIS5A APRIL 993 REVISE JANUARY 995 switching characteristics, V CC =, T C = 5 C PARAMETER TEST CONITIONS MIN TYP MAX UNIT tphl Propagation delay time, high-to-low-level output from 3 ns tplh Propagation delay time, low-to-high-level output from CL = 3 pf, I = 35 ma, 5 ns tr Rise time, drain output See Figures,, and 6 ns tf Fall time, drain output 3 ns ta Reverse-recovery-current rise time IF = 35 ma, di/dt = A/µs, ns trr Reverse-recovery time See Notes 5 and 6 and Figure 5 3 ns NOTES: 5. Technique should limit TJ TC to C maximum. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. thermal resistance RθJC RθJA PARAMETER TEST CONITIONS MIN MAX UNIT W Thermal resistance, junction-to-case to case All eight outputs with equal power C/W NE W 5 Thermal resistance, junction-to-ambient to All eight outputs with equal power C/W NE 5 6 POST OFFICE BOX 65533 ALLAS, TEXAS 7565
PARAMETER MEASUREMENT INFORMATION SLIS5A APRIL 993 REVISE JANUARY 995 Word enerator (see Note A) VCC UT LN TEST CIRCUIT RAIN I 4 V RL = 68 Ω Output CL = 3 pf (see Note B) RAIN,, 4, 5 RAIN, 3, 6, 7 7 6 5 4 3 V V V V V 4 V. 4 V. VOLTAE WAVEFORMS NOTES: A. The word generator has the following characteristics: tr ns, tf ns, tw = 3 ns, pulsed repetition rate (PRR) = 5 khz, ZO = 5 Ω. B. CL includes probe and jig capacitance. Figure. Resistive Load Operation Word enerator (see Note A) VCC LN TEST CIRCUIT 4 V UT RAIN I RL = 68 Ω Output CL = 3 pf (see Note B) Output 5% 5% V tplh tphl 4 V 9% 9% % %. tr tf SWITCHIN TIMES 5% V tsu th 5% 5% V tw INPUT SETUP AN HOL WAVEFORMS NOTES: A. The word generator has the following characteristics: tr ns, tf ns, tw = 3 ns, pulsed repetition rate (PRR) = 5 khz, ZO = 5 Ω. B. CL includes probe and jig capacitance. Figure. Test Circuit, Switching Times, and Voltage Waveforms POST OFFICE BOX 65533 ALLAS, TEXAS 7565 7
SLIS5A APRIL 993 REVISE JANUARY 995 PARAMETER MEASUREMENT INFORMATION.5 OUTPUT CURRENT TIME FOR INCREASIN LOA RESISTANCE REION CURRENT WAVEFORM I O Output Current A.5.75.5.5 Region Region Time IOK (see Notes A and B) IOK I O Output Current t t t 4 µs t.5 ms t t t Time First output current pulses after turn-on in chopping mode with resistive load. NOTES: A. Figure 3 illustrates the output current characteristics of the device energizing a load having initially low, increasing resistance, e.g., an incandescent lamp. In region, chopping occurs and the peak current is limited to IOK. In region, output current is continuous. The same characteristics occur in reverse order when the device energizes a load having an initially high, decreasing resistance. B. Region duty cycle is approximately %. Figure 3. Chopping-Mode Characteristics.5 OUTPUT CURRENT LIMIT CASE TEMPERATURE I O Output Current Limit A..9.6.3 VCC = 5. VCC = 4. 5 5 5 5 75 TC Case Temperature C Figure 4 5 5 8 POST OFFICE BOX 65533 ALLAS, TEXAS 7565
PARAMETER MEASUREMENT INFORMATION SLIS5A APRIL 993 REVISE JANUARY 995 RAIN TP K Circuit Under Test IF (see Note B) L = mh 5 µf 5 V + 4 V TP A.35 A IF di/dt = A/µs t 5% of IRM t t3 R river IRM (see Note C) V (see Note A) 5 Ω ta trr TEST CIRCUIT CURRENT WAVEFORM NOTES: A. The V amplitude and R are adjusted for di/dt = A/µs. A V double-pulse train is used to set IF =.35 A, where t = µs, t = 7 µs, and t3 = 3 µs. B. The RAIN terminal under test is connected to the TP K test point. All other terminals are connected together and connected to the TP A test point. C. IRM = maximum recovery current Figure 5. Reverse-Recovery-Current Test Circuit and Waveforms of Source-rain iode Word enerator (see Note A) VCC UT RAIN I Ω mh VS Input I tw See Note B tav V IAS = 6 ma LN VS V(BR)SX = 5 V MIN SINLE-PULSE AVALANCHE ENERY TEST CIRCUIT VOLTAE AN CURRENT WAVEFORMS Non JEEC symbol for avalanche time. NOTES: A. The word generator has the following characteristics: tr ns, tf ns, ZO = 5 Ω. B. Input pulse duration, tw, is increased until peak current IAS = 6 ma. Energy test level is defined as EAS = (IAS V(BR)SX tav)/ = 75 mj. Figure 6. Single-Pulse Avalanche Energy Test Circuit and Waveforms POST OFFICE BOX 65533 ALLAS, TEXAS 7565 9
SLIS5A APRIL 993 REVISE JANUARY 995 TYPICAL CHARACTERISTICS I CC Supply Current ma 4 3.5 3.5.5.5 VCC = SUPPLY CURRENT FREQUENCY TJS = 4 C to 5 C Maximum Continuous rain Current of Each Output A I.7.6.5.4.3.. MAXIMUM CONTINUOUS RAIN CURRENT OF EACH OUTPUT NUMBER OF OUTPUTS CONUCTIN SIMULTANEOUSLY TA = 5 C TA = C TA = 5 C VCC =. f Frequency MHz Figure 7 3 4 5 6 7 8 N Number of Outputs Conducting Simultaneously Figure 8 Maximum Peak rain Current of Each Output A M I.9.8.7.6.5.4.3.. MAXIMUM PEAK RAIN CURRENT OF EACH OUTPUT NUMBER OF OUTPUTS CONUCTIN SIMULTANEOUSLY d = 5% d = 8% VCC = TA = 5 C d = tw/tperiod d = ms/tperiod d = % 3 4 5 6 7 8 N Number of Outputs Conducting Simultaneously Figure 9 Static rain-source On-State Resistance Ω r S(on) STATIC RAIN-SOURCE ON-STATE RESISTANCE RAIN CURRENT.75.5.5.75.5.5 TC = 5 C TC = 5 C TC = 4 C Current Limit VCC = See Note A..4.6.8. I rain Current A NOTE A: Technique should limit TJ TC to C maximum. Figure POST OFFICE BOX 65533 ALLAS, TEXAS 7565
TYPICAL CHARACTERISTICS SLIS5A APRIL 993 REVISE JANUARY 995 Static rain-source On-State Resistance Ω r S(on).75.5.5.75.5.5 STATIC RAIN-SOURCE ON-STATE RESISTANCE LOIC SUPPLY VOLTAE I = 35 ma See Note A TC = 5 C TC = 5 C TC = 4 C 4 5 6 7 VCC Logic Supply Voltage V Figure NOTE A: Technique should limit TJ TC to C maximum. Switching Time ns 4 8 6 4 I = 35 ma See Note A SWITCHIN TIME CASE TEMPERATURE tplh tr tf 5 5 5 TC Case Temperature C Figure tphl THERMAL INFORMATION Z θ JA Transient Thermal Impedance C /W NE PACKAE TRANSIENT THERMAL IMPEANCE ON TIME d = 5% d = % d = % d = 5% d = % Single Pulse.... t On Time s Where: The single-pulse curve represents measured data. The curves for various pulse durations are based on the following equation: Z JA # t w tc # R JA # t w tc # Z. tw t c. Z. tw. Z. tc. Z. tw t c. Z. tw. Z. tc. = the single-pulse thermal impedance for t = tw seconds = the single-pulse thermal impedance for t = tc seconds = the single-pulse thermal impedance for t = tw + tc seconds d = tw/tc tw tc I Figure 3 POST OFFICE BOX 65533 ALLAS, TEXAS 7565
IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USIN SEMICONUCTOR PROUCTS MAY INVOLVE POTENTIAL RISKS OF EATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL AMAE ( CRITICAL APPLICATIONS ). TI SEMICONUCTOR PROUCTS ARE NOT ESINE, AUTHORIZE, OR WARRANTE TO BE SUITABLE FOR USE IN LIFE-SUPPORT EVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PROUCTS IN SUCH APPLICATIONS IS UNERSTOO TO BE FULLY AT THE CUSTOMER S RISK. In order to minimize risks associated with the customer s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI s publication of information regarding any third party s products or services does not constitute TI s approval, warranty or endorsement thereof. Copyright, Texas Instruments Incorporated