TBD62308AFAG TBD62308AFAG. TOSHIBA BiCD Integrated Circuit Silicon Monolithic. 4channel Low active high current sink type DMOS transistor array

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TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62308AFAG 4channel Low active high current sink type DMOS transistor array TBD62308AFAG are DMOS transistor array with 4 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use. TBD62308AFAG Features 4 circuits built-in High voltage : V OUT = 50 V (MAX) High current : I OUT = 1.5 A/ch (MAX) Input voltage(output on) : - 3.5 V (MAX) Input voltage(output off) : - 0.4 V (MIN) Package : P-SSOP24-0613-1.00-001 P-SSOP24-0613-1.00-001 Weight: 0.35 g (Typ.) Pin connection (top view) O4 I4 NC NC I3 O3 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7 8 9 10 11 12 1 O1 I1 NC NC I2 O2 2 Pin connection may be simplified for explanatory purpose. 1

Pin explanations Pin No. Pin name Function 1 1 Power supply pin 2 O1 Output pin 1 3 I1 Input pin 1 4 NC Non-connection pin 5 pin 6 pin 7 pin 8 pin 9 NC Non-connection pin 10 I2 Input pin 2 11 O2 Output pin 2 12 2 Power supply pin 13 Common pin 14 O3 Output pin 3 15 I3 Input pin 3 16 NC Non-connection pin 17 pin 18 pin 19 pin 20 pin 21 NC Non-connection pin 22 I4 Input pin 4 23 O4 Output pin 4 24 Common pin Equivalent circuit Clamp diode Clamp Circuit Equivalent circuit may be simplified for explanatory purpose. 2

Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Power supply voltage 0.5 to 6.0 V Output voltage V OUT 50 V pin voltage V COM 0.5 to 50 V Output current I OUT 1.5 A/ch Input voltage V IN 0.5 to 30 V Clamp diode reverse voltage Clamp diode forward current V R 50 V I F 1.5 A Power dissipation P D 0.9 (Note 1) / 1.4 (Note 2) W Operating temperature T opr 40 to 85 C Storage temperature T stg 55 to 150 C Note 1: Device alone. When Ta exceeds 25 C, it is necessary to do the derating with 7.2 mw/ C. Note 2: On PCB (Size: 60 mm 30 mm 1.6 mm, Cu area: 30%, single-side glass epoxy). When Ta exceeds 25 C, it is necessary to do the derating with 11.2 mw/ C. Operating Ranges (Ta = 40 to 85 C unless otherwise noted) Characteristics Symbol Condition Min Typ. Max Unit Power supply voltage 4.5 5.5 V Output voltage V OUT 50 V pin voltage V COM 0 50 V Output current (Note 1) I OUT 1 circuit ON, Ta = 25 C 0 1250 t pw = 25 ms 4 circuits ON Ta = 85 C T j = 120 C Input voltage (Output on) V IN (ON) IOUT = 100 ma or upper, VOUT = 2 V Input voltage (Output off) V IN (OFF) IOUT = 100 μa or less, VOUT = 2 V Clamp diode forward current Duty = 10% 0 990 Duty = 50% 0 440 ma/ch 0-3.5 V -0.4 25 V I F 1.25 A Note 1: On PCB (Size: 60 mm 30 mm 1.6 mm, Cu area: 30%, single-side glass epoxy). 3

Electrical Characteristics (Ta = 25 C unless otherwise noted) TBD62308AFAG Characteristics Symbol Test Circuit Output leakage current I leak 1 Output voltage (Output ON-resistance) V DS (R ON ) 2 Condition Min Typ. Max Unit V IN =, V OUT = 50 V Ta = 85 C I OUT = 1.25 A, V IN = 0 V = 5.0 V I OUT = 0.75 A, V IN = 0 V = 5.0 V 1.0 μa 0.48 (0.38) 0.28 (0.37) 1.25 (1.0) 0.75 (1.0) Input current (Output on) I IN(ON) 3 = 5.5 V, V IN = 0 V -0.1-0.3 ma Input current (Output off) I IN(OFF) 4 = 5.5 V, V IN = 100 μa Input voltage (Output on) V IN(ON) 5 Clamp diode reverse current Clamp diode forward voltage Consumption current (Output on) Consumption current (Output off) I OUT = 100 ma or upper V OUT = 2 V - 3.5 V V (Ω) V I R 6 V R = 50 V, Ta = 85 C 1.0 μa V F 7 I F = 1.25 A 2.0 V I CC(ON) 8 = 5.5 V, V IN = 0 V 0.2 1.0 ma/ch I CC(OFF) 9 = 5.5 V, V IN = 100 μa/ch Turn on delay t ON V OUT = 50 V 1.0 R 10 L = 42 Ω C L = 15 pf Turn off delay t OFF 2.0 = 5.0 V μs 4

Test circuit 1. I leak 2. V DS (R ON ) I leak V OUT =V IN V IN I OUT V DS R ON = V DS / I OUT 3. I IN (ON) 4. I IN (OFF) I IN(ON) V IN I IN(OFF) =V IN 5. V IN (ON) 6. I R I R V IN(ON) I OUT V OUT V R 7. V F 8. I CC(ON) I F V F I CC(ON) V IN 9. I CC(OFF) I CC(OFF) =V IN Test circuit may be simplified for explanatory purpose. 5

10. t ON, t OFF (Note 1) (Note 2) 90% Input 50% t f 10% 10% 50 μs t ON 90% 50% t OFF Output 50% 50% t r V IH V OH V OL Note 1: Pulse width 50 μs, Duty cycle 10% Output impedance 50 Ω, t r 5 ns, t f 10 ns, V IH = 5.0 V Note 2: C L includes the probe and the test board capacitance. Test circuit and timing chart may be simplified for explanatory purpose. Precautions for Using (1) This IC does not include built-in protection circuits for excess current or overvoltage. Therefore, if the short circuit between adjacent pins or between outputs, the short-to-power or ground fault has occurred, the current or voltage beyond the absolute maximum rating is impressed, and IC destroys. When designing, please consider enough in power supply line, output line and line. In addition, so as not to continue to flow a current that exceeds the absolute maximum rating of the IC, please insert the appropriate fuse in the power supply line. (2) This IC is being used to drive an inductive load (such as a motor, solenoid or relay), When this IC is being used to drive an inductive load (such as a motor, solenoid, or relay), the diodes (pins 13 and 24) should be connected to the secondary power supply pin so as to absorb the counter electromotive force generated by the load. Please adhere to the device s absolute maximum ratings. Connecting Zener diodes between the diodes (pins 13 and 24) and the secondary power supply pin (as the anode) is recommended so as to enable rapid absorption of the counter electromotive force. Again, please adhere to the device s absolute maximum ratings. 6

Package Dimensions Weight: 0.35 g (Typ.) 7

Notes on Contents 1. Pin connection Pin connection may be simplified for explanatory purpose. 2. Equivalent Circuits Equivalent circuit may be simplified for explanatory purpose. 3. Timing chart Timing charts may be simplified for explanatory purposes. 4. Test circuit Test circuit may be simplified for explanatory purpose. IC Usage Considerations Notes on handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion. (2) Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion. In addition, do not use any device inserted in the wrong orientation or incorrectly to which current is applied even just once. (3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To minimize the effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as from input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection-type IC that inputs output DC voltage to a speaker directly. Points to remember on handling of ICs Heat Radiation Design When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is appropriately radiated, in order not to exceed the specified junction temperature (TJ) at any time or under any condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the effect of IC heat radiation with peripheral components. Back-EMF When a motor rotates in the reverse direction, stops or slows abruptly, current flows back to the motor s power supply owing to the effect of back-emf. If the current sink capability of the power supply is small, the device s motor power supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take the effect of back-emf into consideration in system design. 8

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