LF444 Quad Low Power JFET Input Operational Amplifier

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Transcription:

LF444 Quad Low Power JFET Input Operational Amplifier General Description The LF444 quad low power operational amplifier provides many of the same AC characteristics as the industry standard LM148 while greatly improving the DC characteristics of the LM148 The amplifier has the same bandwidth slew rate and gain (10 kx load) as the LM148 and only draws one fourth the supply current of the LM148 In addition the well matched high voltage JFET input devices of the LF444 reduce the input bias and offset currents by a factor of 10 000 over the LM148 The LF444 also has a very low equivalent input noise voltage for a low power amplifier The LF444 is pin compatible with the LM148 allowing an immediate 4 times reduction in power drain in many applications The LF444 should be used wherever low power dissipation and good electrical characteristics are the major considerations Simplified Schematic Quad Features December 1994 Y supply current of a LM148 200 ma Amplifier (max) Y Low input bias current 50 pa (max) Y High gain bandwidth 1 MHz Y High slew rate 1 V ms Y Low noise voltage for low power 35 nv 0Hz Y Low input noise current 0 01 pa 0Hz Y High input impedance 10 12X Y High gain VO e g10v R L e 10k 50k (min) Connection Diagram Dual-In-Line Package LF444 Quad Low Power JFET Input Operational Amplifier Ordering Information LF444XYZ X indicates electrical grade Y indicates temperature range M for military C for commercial Z indicates package type D M or N TL H 9156 1 TL H 9156 2 Top View Order Number LF444AMD LF444CM LF444ACN LF444CN or LF444MD 883 See NS Package Number D14E M14A or N14A BI-FETTM and BI-FET IITM are trademarks of National Semiconductor Corporation C1995 National Semiconductor Corporation TL H 9156 RRD-B30M115 Printed in U S A

Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications LF444A LF444 Supply Voltage g22v g18v Differential Input Voltage g38v g30v Input Voltage Range g19v g15v (Note 1) Output Short Circuit Continuous Continuous Duration (Note 2) D Package N M Packages Power Dissipation 900 mw 670 mw (Notes 3 and 9) T j max 150 C 115 C i ja (Typical) 100 C W 85 C W LF444A LF444 Operating Temperature Range (Note 4) Storage Temperature Range b65 C s T A s 150 C ESD Tolerance (Note 10) Rating to be determined Soldering Information Dual-In-Line Packages (Soldering 10 sec ) 260 C Small Outline Package Vapor Phase (60 sec ) 215 C Infrared (15 sec ) 220 C See AN-450 Surface Mounting Methods and Their Effect on Product Reliability for other methods of soldering surface mount devices DC Electrical Characteristics (Note 5) Symbol Parameter Conditions LF444A LF444 Min Typ Max Min Typ Max V OS Input Offset Voltage R S e 10k T A e 25 C 2 5 3 10 mv DV OS DT Average TC of Input R S e 10 kx Offset Voltage Units 0 C s T A s a70 C 6 5 12 mv b55 C s T A s a125 C 8 mv 10 10 mv C I OS Input Offset Current V S e g15v T j e 25 C 5 25 5 50 pa (Notes 5 6) T j e 70 C 1 5 1 5 na T j e 125 C 10 na I B Input Bias Current V S e g15v T j e 25 C 10 50 10 100 pa (Notes 5 6) T j e 70 C 3 3 na T j e 125 C 20 na R IN Input Resistance T j e 25 C 10 12 10 12 X A VOL Large Signal Voltage V S e g15v V O e g10v Gain R L e 10 kx T A e25 C 50 100 25 100 V mv Over Temperature 25 15 V mv V O Output Voltage Swing V S e g15v R L e 10 kx g12 g13 g12 g13 V V CM Input Common-Mode g16 a18 g11 a14 V Voltage Range b17 b12 V CMRR Common-Mode Rejection Ratio R S s 10 kx 80 100 70 95 db PSRR Supply Voltage (Note 7) Rejection Ratio 80 100 70 90 db I S Supply Current 0 6 0 8 0 6 1 0 ma 2

AC Electrical Characteristics (Note 5) Symbol Parameter Conditions Amplifier-to-Amplifier Coupling LF444A LF444 Min Typ Max Min Typ Max Units b120 b120 db SR Slew Rate V S e g15v T A e 25 C 1 1 V ms GBW Gain-Bandwidth Product V S e g15v T A e 25 C 1 1 MHz e n Equivalent Input Noise Voltage T A e 25 C R S e 100X f e 1 khz 35 35 nv 0Hz i n Equivalent Input Noise Current T A e 25 C f e 1 khz 0 01 0 01 pa 0Hz Note 1 Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage Note 2 Any of the amplifier outputs can be shorted to ground indefinitely however more than one should not be simultaneously shorted as the maximum junction temperature will be exceeded Note 3 For operating at elevated temperature these devices must be derated based on a thermal resistance of i ja Note 4 The LF444A is available in both the commercial temperature range 0 C s T A s 70 C and the military temperature range b55 C s T A s 125 C The LF444 is available in the commercial temperature range only The temperature range is designated by the position just before the package type in the device number A C indicates the commercial temperature range and an M indicates the military temperature range The military temperature range is available in D package only Note 5 Unless otherwise specified the specifications apply over the full temperature range and for V S e g20v for the LF444A and for V S e g15v for the LF444 V OS I B and I OS are measured at V CM e 0 Note 6 The input bias currents are junction leakage currents which approximately double for every 10 C increase in the junction temperature T j Due to limited production test time the input bias currents measured are correlated to junction temperature In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation P D T j et A ai ja P D where i ja is the thermal resistance from junction to ambient Use of a heat sink is recommended if input bias current is to be kept to a minimum Note 7 Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from g15v to g5v for the LF444 and from g20v to g5v for the LF444A Note 8 Refer to RETS444X for LF444MD military specifications Note 9 Max Power Dissipation is defined by the package characteristics Operating the part near the Max Power Dissipation may cause the part to operate outside guaranteed limits Note 10 Human body model 1 5 kx in series with 100 pf Typical Performance Characteristics Input Bias Current Input Bias Current Supply Current Positive Common-Mode Input Voltage Limit Negative Common-Mode Input Voltage Limit Positive Current Limit TL H 9156 3 3

Typical Performance Characteristics (Continued) Negative Current Limit Output Voltage Swing Output Voltage Swing Gain Bandwidth Bode Plot Slew Rate Distortion vs Frequency Undistorted Output Voltage Swing Open Loop Frequency Response Common-Mode Rejection Ratio Power Supply Rejection Ratio Equivalent Input Noise Voltage TL H 9156 4 4

Typical Performance Characteristics (Continued) Open Loop Voltage Gain Output Impedance Inverter Settling Time TL H 9156 5 Pulse Response R L e 10 kx C L e10 pf Small Signal Inverting Small Signal Non-Inverting TL H 9156 6 TL H 9156 7 Large Signal Inverting Large Signal Non-Inverting TL H 9156 8 TL H 9156 9 5

Application Hints This device is a quad low power op amp with JFET input devices (BI-FETTM) These JFETs have large reverse breakdown voltages from gate to source and drain eliminating the need for clamps across the inputs Therefore large differential input voltages can easily be accommodated without a large increase in input current The maximum differential input voltage is independent of the supply voltages However neither of the input voltages should be allowed to exceed the negative supply as this will cause large currents to flow which can result in a destroyed unit Exceeding the negative common-mode limit on either input will force the output to a high state potentially causing a reversal of phase to the output Exceeding the negative common-mode limit on both inputs will force the amplifier output to a high state In neither case does a latch occur since raising the input back within the common-mode range again puts the input stage and thus the amplifier in a normal operating mode Exceeding the positive common-mode limit on a single input will not change the phase of the output however if both inputs exceed the limit the output of the amplifier will be forced to a high state The amplifiers will operate with a common-mode input voltage equal to the positive supply however the gain bandwidth and slew rate may be decreased in this condition When the negative common-mode voltage swings to within 3V of the negative supply an increase in input offset voltage may occur Each amplifier is individually biased to allow normal circuit operation with power supplies of g3 0V Supply voltages less than these may degrade the common-mode rejection and restrict the output voltage swing The amplifiers will drive a 10 kx load resistance to g10v over the full temperature range If the amplifier is forced to drive heavier load currents however an increase in input offset voltage may occur on the negative voltage swing and finally reach an active current limit on both positive and negative swings Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed unit As with most amplifiers care should be taken with lead dress component placement and supply decoupling in order to ensure stability For example resistors from the output to an input should be placed with the body close to the input to minimize pick-up and maximize the frequency of the feedback pole by minimizing the capacitance from the input to ground A feedback pole is created when the feedback around any amplifier is resistive The parallel resistance and capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole In many instances the frequency of this pole is much greater than the expected 3 db frequency of the closed loop gain and consequently there is negligible effect on stability margin However if the feedback pole is less than approximately 6 times the expected 3 db frequency a lead capacitor should be placed from the output to the input of the op amp The value of the added capacitor should be such that the RC time constant of this capacitor and the resistance it parallels is greater than or equal to the original feedback pole time constant Typical Application ph Probe Amplifier Temperature Compensator For R2 e 50k R4 e 330k g1% For R2 e 100k R4 e 75k g1% For R2 e 200k R4 e 56k g1% Polystyrene Film resistor type RN60C To calibrate insert probe in ph e7 solution Set the TEMPERATURE AD- JUST pot R2 to correspond to the solution temperature full clockwise for 0 C and proportionately for intermediate temperatures using a turns-counting dial Then set CALIBRATE pot so output reads 7V Typical probe e Ingold Electrodes 465-35 TL H 9156 10 6

Detailed Schematic Quad TL H 9156 11 7

8

Physical Dimensions inches (millimeters) Order Number LF444AMD or LF444MD 883 See NS Package Number D14E Order Number LF444CM See NS Package Number M14A 9

LF444 Quad Low Power JFET Input Operational Amplifier Physical Dimensions inches (millimeters) (Continued) Order Number LF444ACN or LF444CN See NS Package Number N14A LIFE SUPPORT POLICY NATIONAL S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which (a) are intended for surgical implant support device or system whose failure to perform can into the body or (b) support or sustain life and whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can effectiveness be reasonably expected to result in a significant injury to the user National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd Japan Ltd 1111 West Bardin Road Fax (a49) 0-180-530 85 86 13th Floor Straight Block Tel 81-043-299-2309 Arlington TX 76017 Email cnjwge tevm2 nsc com Ocean Centre 5 Canton Rd Fax 81-043-299-2408 Tel 1(800) 272-9959 Deutsch Tel (a49) 0-180-530 85 85 Tsimshatsui Kowloon Fax 1(800) 737-7018 English Tel (a49) 0-180-532 78 32 Hong Kong Fran ais Tel (a49) 0-180-532 93 58 Tel (852) 2737-1600 Italiano Tel (a49) 0-180-534 16 80 Fax (852) 2736-9960 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications