Mechatronics and Measurement. Lecturer:Dung-An Wang Lecture 2

Similar documents
UNIT 3: FIELD EFFECT TRANSISTORS

Lecture 24: Bipolar Junction Transistors (1) Bipolar Junction Structure, Operating Regions, Biasing

Student Lecture by: Giangiacomo Groppi Joel Cassell Pierre Berthelot September 28 th 2004

Field - Effect Transistor

Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering

Unit III FET and its Applications. 2 Marks Questions and Answers

Lecture 3: Transistors

The Common Source JFET Amplifier

Electronic Circuits II - Revision

5.1 BJT Device Structure and Physical Operation

THE JFET. Script. Discuss the JFET and how it differs from the BJT. Describe the basic structure of n-channel and p -channel JFETs

Field-Effect Transistor (FET) is one of the two major transistors; FET derives its name from its working mechanism;

Physics of Bipolar Transistor

ET215 Devices I Unit 4A

I E I C since I B is very small

Chapter 3 Bipolar Junction Transistors (BJT)

COE/EE152: Basic Electronics. Lecture 5. Andrew Selasi Agbemenu. Outline

Three Terminal Devices

Field Effect Transistors (npn)

MEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I

FIELD EFFECT TRANSISTORS MADE BY : GROUP (13)/PM

Transistor Characteristics

Chapter 5: Field Effect Transistors

Basic Electronics: Diodes and Transistors. October 14, 2005 ME 435

Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.

UNIT 3 Transistors JFET

FET(Field Effect Transistor)

Lecture 15. Field Effect Transistor (FET) Wednesday 29/11/2017 MOSFET 1-1

Field Effect Transistors

FET. FET (field-effect transistor) JFET. Prepared by Engr. JP Timola Reference: Electronic Devices by Floyd

ECE 440 Lecture 29 : Introduction to the BJT-I Class Outline:

Bipolar Junction Transistor (BJT)

Chapter 8. Field Effect Transistor

Chapter 3. Bipolar Junction Transistors

Electronics I. Last Time

Department of Electrical Engineering IIT Madras

Bipolar Junction Transistors

THE METAL-SEMICONDUCTOR CONTACT

output passes full first (positive) hump and 1/2-scale second hump

(a) BJT-OPERATING MODES & CONFIGURATIONS

Analog & Digital Electronics Course No: PH-218

Chapter 6: Field-Effect Transistors

Physics 160 Lecture 5. R. Johnson April 13, 2015

Lecture Note on Switches Marc T. Thompson, 2003 Revised Use with gratefulness for ECE 3503 B term 2018 WPI Tan Zhang

Shankersinh Vaghela Bapu Institute of Technology INDEX

PESIT Bangalore South Campus

Q1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET).

Integrated diodes. The forward voltage drop only slightly depends on the forward current. ELEKTRONIKOS ĮTAISAI

FIELD EFFECT TRANSISTOR (FET) 1. JUNCTION FIELD EFFECT TRANSISTOR (JFET)

Bipolar Junction Transistors (BJTs) Overview

Concepts to be Covered

MTLE-6120: Advanced Electronic Properties of Materials. Semiconductor transistors for logic and memory. Reading: Kasap

Field Effect Transistor (FET) FET 1-1

BJT. Bipolar Junction Transistor BJT BJT 11/6/2018. Dr. Satish Chandra, Assistant Professor, P P N College, Kanpur 1

Field Effect Transistors

Analog Electronics. Lecture 3. Muhammad Amir Yousaf

Laboratory #5 BJT Basics and MOSFET Basics

Lecture - 18 Transistors

EIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices

CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs)

Solid State Devices- Part- II. Module- IV

Lecture (09) Bipolar Junction Transistor 3

Lecture 9 Transistors

Experiment (1) Principles of Switching

UNIT-VI FIELD EFFECT TRANSISTOR. 1. Explain about the Field Effect Transistor and also mention types of FET s.

Learning Outcomes. Spiral 2-6. Current, Voltage, & Resistors DIODES

COLLECTOR DRAIN BASE GATE EMITTER. Applying a voltage to the Gate connection allows current to flow between the Drain and Source connections.

EE70 - Intro. Electronics

Figure1: Basic BJT construction.

ELEC 3908, Physical Electronics, Lecture 16. Bipolar Transistor Operation

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha

ET Training. Electronics: JFET Instructor: H.Pham. The JUNCTION FIELF EFFECT TRANSISTOR (JFET) n channel JFET p channel JFET

Exam Model Answer. Question 1 (15 marks) Answer this question in the form of table. Choose the correct answer (only one answer is accepted).

Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam

INTRODUCTION: Basic operating principle of a MOSFET:

EE 5611 Introduction to Microelectronic Technologies Fall Thursday, September 04, 2014 Lecture 02

Electronic Component Applications

Bipolar junction transistors.

EEE118: Electronic Devices and Circuits

Lecture 12. Bipolar Junction Transistor (BJT) BJT 1-1

IFB270 Advanced Electronic Circuits

Basic Electronics. Introductory Lecture Course for. Technology and Instrumentation in Particle Physics Chicago, Illinois June 9-14, 2011

Diode Limiters or Clipper Circuits

7. Bipolar Junction Transistor

UNIT-III Bipolar Junction Transistor

SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N

SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)

Electromagnetic spectrum

EDC UNIT IV- Transistor and FET Characteristics EDC Lesson 9- ", Raj Kamal, 1

Transistors. Bipolar Junction transistors Principle of operation Characteristics. Field effect transistors Principle of operation Characteristics

Electronics 1 Lab (CME 2410) School of Informatics & Computing German Jordanian University Laboratory Experiment (10) Junction FETs

Electronic Circuits. Junction Field-effect Transistors. Dr. Manar Mohaisen Office: F208 Department of EECE

AE53/AC53/AT53/AE103 ELECT. DEVICES & CIRCUITS DEC 2015

EXPERIMENT 5 CURRENT AND VOLTAGE CHARACTERISTICS OF BJT

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

Lecture 13. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) MOSFET 1-1

ELEC 2210 EXPERIMENT 7 The Bipolar Junction Transistor (BJT)

AIM:-To observe and draw the Forward bias V-I Characteristics of a P-N Junction diode and study of L.E.D characteristics.

Questions on JFET: 1) Which of the following component is a unipolar device?

Lecture (06) Bipolar Junction Transistor

Transcription:

Mechatronics and Measurement Lecturer:Dung-An Wang Lecture 2

Lecture outline Reading:Ch3 of text Today s lecture Semiconductor 2

Diode 3

4

Zener diode Voltage-regulator diodes. This family of diodes exhibits steep breakdown curves with well-defined breakdown voltages 5

Voltage-regulator Even when the current through the zener diode changes (deltaiz), the output voltage remains relatively constant (delta Vz is small) 6

Practice Design example 3.1 on p. 84 7

Light-emitting diodes (LEDs) 8

Photodiodes If photons excite carriers in a reverse-biased pn junction, a very small current proportional to the light intensity flows 9

Bipolar Junction Transistor n-type silicon in the emitter is more heavily doped than the collector, so the collector and emitter are not interchangeable. 10

Physics Base to emitter junction forward biased, electrons diffuse from the emitter n-type region to the base p- type region. Base to collector junction is reverse biased, there is a depletion region that prevent flow of electrons from the base region into the collector region. because base region is manufactured to be very thin and the emitter n-type region is more heavily doped than the base, most of the electrons from the emitter accelerate through the base region with enough momentum to cross the depletion region into the collector region without recombining with holes in the base region. 11

Beta: order of 100 12

3.4.2 Common Emitter Transistor Circuit Common emitter circuit 13

Common emitter circuit The power dissipated by the transistor ( ICVCE ) is smallest, for a given collector current, when it is fully saturated. If the transistor is not fully saturated, it gets hot faster and can fail. In full saturation,v CE is at its minimum, which is about 0.2 V for a BJT. So in saturation, the base to- emitter junction is forward biased ( V BE 0.7 V), there is a small drop from the collector to the emitter ( V CE 0.2 V). 14

EXAMPLE 3.4 15

3.4.3 Bipolar Transistor Switch 16

17

18

19

3.4.6 Phototransistor and Optoisolator light emitted by the LED causes current to flow in the phototransistor circuit. This output circuit can have a different ground reference, and the supply voltage Vs can be chosen to establish a desired output voltage range. With no common ground, the optoisolator creates a state of electrical isolation between the input and output circuits by transmitting the signal optically rather than through an electrical connection. 20

Lab exercise 5 Develop an understanding of how transistor circuits function. 21

3.5 FIELD-EFFECT TRANSISTORS 22

With a positive Vgs larger than Vt, as Vds is increased from 0, we enter the active region, also called the ohmic region, of the MOSFET. In this region, as Vgs is further increased, the conduction channel grows correspondingly, and the MOSFET appears to function like a variable resistor whose resistance is controlled by Vgs. 23

However, when Vgs - Vt reaches Vdd, there is no longer an electric field at the drain end of the MOSFET. Therefore, the width of the n-channel shrinks to a minimum value close to the drain resulting in what is called pinch-off. This pinch-off limits a further increase in drain current, and the MOSFET is said to be in saturation. In saturation, the current is almost constant with further increases in Vds. The drain-to-source resistance, called R on, is minimal (usually less than 5 Ω) as it enters the saturation region. 24

3.5.3 Applications of MOSFETs Vg <= 0 for the MOSFET to be cutoff so that no current is delivered to the load. When Vg - Vt Vdd, the MOSFET enters saturation resulting in nearly full voltagevs across the load (because Ron is small). 25

Flyback diode 26

If the control signal Vg is zero, the MOSFET will be cutoff resulting in a huge drain to source impedance (in megaohms) essentially blocking the analog signal ( Vout 0 V). The pull-down resistor R is required to hold the V out terminal at ground in the off state. When the control signal Vg is larger than the largest value of the analog input signal Vin plus threshold voltage Vt, the drain to source channel will conduct with a low resistance, and the output signal will track the input ( Vout =Vin ). 27

DESIGN EXAMPLE 3.4 28