MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies. ThelatestCoolMOS P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,tv,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof thearteaseofuselevel.thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns. IPAKSL tab Features ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss Excellentthermalbehavior IntegratedESDprotectiondiode Lowswitchinglosses(Eoss) Productvalidationacc.JEDECStandard Benefits Costcompetitivetechnology Lowertemperature HighESDruggedness Enablesefficiencygainsathigherswitchingfrequencies Enableshighpowerdensitydesignsandsmallformfactors Potentialapplications RecommendedforFlybacktopologiesforexampleusedinChargers, Adapters,LightingApplications,etc. Gate Pin 1 Drain Pin 2, Tab Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25 C 700 V RDS(on),max 0.36 Ω Qg,typ 16.4 nc ID,pulse 34 A Eoss @ 400V 1.8 µj V(GS)th,typ 3 V ESD class (HBM) 2 Type/OrderingCode Package Marking RelatedLinks PGTO 2513 70S360P7 see Appendix A 1 Rev.2.1,20180213
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Test Circuits........................................................................... Package Outlines....................................................................... 11 Appendix A............................................................................ 12 Revision History........................................................................ 13 Trademarks........................................................................... 13 Disclaimer............................................................................ 13 2 Rev.2.1,20180213
1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 12.5 7.5 A TC = 20 C TC = 0 C Pulsed drain current 2) ID,pulse 34 A TC=25 C Application (Flyback) relevant avalanche current, single pulse 3) IAS 4.5 A MOSFET dv/dt ruggedness dv/dt 0 V/ns VDS=0...400V Gate source voltage VGS 16 30 16 30 V measured with standard leakage inductance of transformer of µh static; AC (f>1 Hz) Power dissipation Ptot 59.5 W TC=25 C Operating and storage temperature Tj,Tstg 40 150 C Continuous diode forward current IS 8.5 A TC=25 C Diode pulse current 2) IS,pulse 34 A TC = 25 C Reverse diode dv/dt 4) dv/dt 1 V/ns VDS=0...400V,ISD<=IS,Tj=25 C Maximum diode commutation speed 4) dif/dt 50 A/µs VDS=0...400V,ISD<=IS,Tj=25 C Insulation withstand voltage VISO n.a. V Vrms, TC=25 C, t=1min 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction RthJC 2.1 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Thermal resistance, junction ambient for SMD version Soldering temperature, wavesoldering only allowed at leads RthJA C/W n.a. Tsold 260 C 1.6 mm (0.063 in.) from case for s 1) Limited by Tj max. Tj = 20 C. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3) Proven during verification test. For explanation please read AN CoolMOS TM 700V P7. 4) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 3 Rev.2.1,20180213
3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 700 V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.15mA Zero gate voltage drain current IDSS 1 µa VDS=700V,VGS=0V,Tj=25 C VDS=700V,VGS=0V,Tj=150 C Gatesource leakage current incl. Zener IGSS 1 µa VGS=20V,VDS=0V diode Drainsource onstate resistance RDS(on) 0.30 0.67 0.36 Ω VGS=V,ID=3.0A,Tj=25 C VGS=V,ID=3.0A,Tj=150 C Gate resistance RG 30 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 517 pf VGS=0V,VDS=400V,f=250kHz Output capacitance Coss 11 pf VGS=0V,VDS=400V,f=250kHz Effective output capacitance, energy related 1) Co(er) 27 pf VGS=0V,VDS=0...400V Effective output capacitance, time related 2) Co(tr) 329 pf ID=constant,VGS=0V,VDS=0...400V Turnon delay time td(on) 19 ns Rise time tr 8 ns Turnoff delay time td(off) 0 ns Fall time tf 18 ns VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω VDD=400V,VGS=13V,ID=2.3A, RG=5.3Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 2.3 nc VDD=400V,ID=2.3A,VGS=0toV Gate to drain charge Qgd 6.0 nc VDD=400V,ID=2.3A,VGS=0toV Gate charge total Qg 16.4 nc VDD=400V,ID=2.3A,VGS=0toV Gate plateau voltage Vplateau 4.4 V VDD=400V,ID=2.3A,VGS=0toV 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 4 Rev.2.1,20180213
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD 0.9 V VGS=0V,IF=3.8A,Tj=25 C Reverse recovery time trr 2 ns VR=400V,IF=2.3A,diF/dt=50A/µs Reverse recovery charge Qrr 1 µc VR=400V,IF=2.3A,diF/dt=50A/µs Peak reverse recovery current Irrm A VR=400V,IF=2.3A,diF/dt=50A/µs 5 Rev.2.1,20180213
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 80 2 70 µs 1 µs 60 1 0 µs 50 0 1 ms Ptot[W] 40 ID[A] ms 30 1 DC 20 2 0 0 25 50 75 0 125 150 TC[ C] Ptot=f(TC) 3 0 1 2 3 VDS[V] ID=f(VDS);TC=25 C;D=0;parameter:tp Diagram3:Safeoperatingarea 2 Diagram4:Max.transientthermalimpedance 1 1 µs 0 µs 1 µs ID[A] 0 1 1 ms ms ZthJC[K/W] 0 0.5 0.2 DC 0.1 2 0.05 0.02 3 0 1 2 3 VDS[V] ID=f(VDS);TC=80 C;D=0;parameter:tp 1 0.01 single pulse 5 4 3 2 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.1,20180213
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 40 35 20 V V 8 V 30 25 20 V V 8 V 7 V 30 7 V 25 6 V 20 6 V 5.5 V ID[A] 20 ID[A] 15 15 5.5 V 5 V 5 5 V 4.5 V 5 4.5 V 0 0 5 15 20 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 0 0 5 15 20 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 2.00 Diagram8:Drainsourceonstateresistance 1.00 1.80 0.90 1.60 6.5 V 0.80 1.40 7 V 0.70 RDS(on)[Ω] 1.20 1.00 0.80 5 V 5.5 V 6 V V RDS(on)[Ω] 0.60 0.50 0.40 98% typ 0.60 0.30 0.40 0.20 0.20 0. 0.00 0 20 30 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS 0.00 50 25 0 25 50 75 0 125 150 Tj[ C] RDS(on)=f(Tj);ID=3.0A;VGS=V 7 Rev.2.1,20180213
Diagram9:Typ.transfercharacteristics 40 Diagram:Typ.gatecharge 35 30 25 C 9 8 7 120 V 25 6 400 V ID[A] 20 150 C VGS[V] 5 15 4 3 2 5 1 0 0 2 4 6 8 12 VGS[V] ID=f(VGS);VDS=20V;parameter:Tj 0 0 5 15 20 Qgate[nC] VGS=f(Qgate);ID=2.3Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 2 25 C 125 C Diagram13:Drainsourcebreakdownvoltage 840 820 800 780 1 760 IF[A] VBR(DSS)[V] 740 720 700 0 680 660 640 620 1 0.0 0.5 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 600 75 50 25 0 25 50 75 0 125 150 175 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.1,20180213
Diagram14:Typ.capacitances 4 Diagram15:Typ.Cossstoredenergy 4.0 3.5 3 Ciss 3.0 2 2.5 C[pF] 1 Coss Eoss[µJ] 2.0 1.5 0 Crss 1.0 0.5 1 0 0 200 300 400 500 VDS[V] C=f(VDS);VGS=0V;f=250kHz 0.0 0 0 200 300 400 500 600 700 VDS[V] Eoss=f(VDS) 9 Rev.2.1,20180213
5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V DS R g 2 I F R g 1 = R g 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform V DS 90% V DS V GS V GS % t d(on) t r t d(off) t f t on t off TableUnclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D V DS V DS I D V DS Rev.2.1,20180213
11 700VCoolMOSªP7PowerTransistor Rev.2.1,20180213 6PackageOutlines DIM A 2.0 06042016 ISSUE DATE EUROPEAN PROJECTION 0.035 0.018 0.018 0.235 0.025 0.182 0.250 0.130 0.087 0.205 0.035 0.026 0.197 MILLIMETERS 4.63 3.30 0.88 3 2.29 4.57 MIN 0.90 0.46 0.65 5.98 0.46 6.35 2.20 0.64 5.00 5.21 1.28 3.60 0.60 6.73 0.89 6.22 0.60 1.15 1.14 2.40 MAX 5.50 5.60 MIN 0.205 3 0.090 0.180 0.050 0.142 INCHES MAX 0.024 0.045 0.245 0.024 0.035 0.094 0.045 0.265 0.217 0.220 0 2.0 SCALE 4mm 0 DOCUMENT NO. Z8B001852 REVISION 01 0.033 0.85 1.25 0.049 A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 5.20 Figure1OutlinePGTO2513,dimensionsinmm/inches
7AppendixA Table11RelatedLinks IFXCoolMOSªP7Webpage:www.infineon.com IFXDesigntools:www.infineon.com 12 Rev.2.1,20180213
RevisionHistory Revision:20180213,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 201611 Release of final version 2.1 20180213 Corrected front page text TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13 Rev.2.1,20180213