Applications Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features Functional Block Diagram Frequency: DC to 3.5 GHz Output Power (P3dB): 6 W Peak (25 Watts Avg.) at 3.3 GHz Linear Gain: >14 db at 3.3 GHz Typical PAE: > 58% at 3.3 GHz Operating Voltage: 32 V Low thermal resistance package General Description The TriQuint TGF2819-FL is a greater-than 0 W Peak ( W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint s proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Pin Configuration Pin No. Label 1 VD / RF OUT 2 VG / RF IN Flange Source Lead-free and ROHS compliant Evaluation boards are available upon request. Ordering Information Part ECCN Description TGF2819-FL 3A001.b.3.a TGF2819-FS-EVB1 EAR99 Packaged part Flanged 3.1-3.5 GHz Evaluation Board Datasheet: Rev B- 03-03- - 1 of 21 - Disclaimer: Subject to change without notice
Absolute Maximum Ratings Parameter Breakdown Voltage (BVDG) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PD) RF Input Power, CW, T = 25 C (PIN) Value 1 V -7 to 0 V A -28.8 to 33.6 ma 144 W 39.8 dbm Channel Temperature (TCH) 275 C Mounting Temperature (30 Seconds) 3 C Storage Temperature -40 to 0 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Drain Voltage (VD) Drain Quiescent Current (IDQ) Peak Drain Current, Pulse ( ID) Gate Voltage (VG) Channel Temperature (TCH) Power Dissipation, CW (PD) Power Dissipation, Pulse (PD) Value 32 V (Typ.) 2 ma (Typ.) 7.23 A (Typ.) -2.9 V (Typ.) 2 C (Max.) 86 W (Max) 144 W (Max) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Pulse signal: 0uS Pulse Width, % Duty Cycle RF Characterization Load Pull Performance at 2.7 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 32 V, IDQ = 2 ma Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned).6 db P3dB Output Power at 3 db Gain Compression (Power Tuned) 5 W PAE3dB Power-Added Efficiency at 3 db Gain Compression (Eff. Tuned) 60.9 % G3dB Gain at 3 db Compression (Power Tuned).6 db 1. Pulse: 0µs, % RF Characterization Load Pull Performance at 2.9 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 32 V, IDQ = 2 ma Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 14.8 db P3dB Output Power at 3 db Gain Compression (Power Tuned) 1 W PAE3dB Power-Added Efficiency at 3 db Gain Compression (Eff. Tuned) 69.5 % G3dB Gain at 3 db Compression (Power Tuned) 11.8 db 1. Pulse: 0µs, % Datasheet: Rev B- 03-03- - 2 of 21 - Disclaimer: Subject to change without notice
RF Characterization Load Pull Performance at 3.1 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 32 V, IDQ = 2 ma Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 14.3 db P3dB Output Power at 3 db Gain Compression (Power Tuned) 9 W PAE3dB Power-Added Efficiency at 3 db Gain Compression (Eff. Tuned) 61.4 % G3dB Gain at 3 db Compression (Power Tuned) 11.3 db 1. Pulse: 0µs, % RF Characterization Load Pull Performance at 3.3 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 32 V, IDQ = 2 ma Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned) 14.2 db P3dB Output Power at 3 db Gain Compression (Power Tuned) 6 W PAE3dB Power-Added Efficiency at 3 db Gain Compression (Eff. Tuned) 58.3 % G3dB Gain at 3 db Compression (Power Tuned) 11.2 db 1. Pulse: 0µs, % RF Characterization Load Pull Performance at 3.5 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 32 V, IDQ = 2 ma Symbol Parameter Min Typical Max Units GLIN Linear Gain (Power Tuned).9 db P3dB Output Power at 3 db Gain Compression (Power Tuned) 1 W PAE3dB Power-Added Efficiency at 3 db Gain Compression (Eff. Tuned) 59.8 % G3dB Gain at 3 db Compression (Power Tuned).9 db 1. Pulse: 0µs, % Datasheet: Rev B- 03-03- - 3 of 21 - Disclaimer: Subject to change without notice
RF Characterization Performance at 3.5GHz TGF2819-FL Test conditions unless otherwise noted: TA = 25 C, VD = 32 V, IDQ = 2 ma Symbol Parameter Min Typical Max Units GLIN Linear Gain.1 db P3dB Output Power at 3 db Gain Compression 6 W PAE3dB Power-Added Efficiency at 3 db Gain Compression 49.2 % G3dB Gain at 3 db Compression.1 db 1. Pulse: 0µs PW, % 2. Performance at 3.5GHz in the 3.1 to 3.5GHz Evaluation Board RF Characterization Mismatched Ruggedness at 3. GHz Test conditions unless otherwise noted: TA = 25 C, VD = 32 V, IDQ = 2 ma Symbol Parameter Typical VSWR Impedance Mismatch Ruggedness :1 1. Input power established at P3dB at matched load at the output of 3.1 3.5 GHz Evaluation Board 2. Pulse: 0uS PW, % Datasheet: Rev B- 03-03- - 4 of 21 - Disclaimer: Subject to change without notice
Median Lifetime, T M (Hours) Thermal and Reliability Information TGF2819-FL Parameter Test Conditions Value Units Thermal Resistance (1) (θjc) 0.75 C/W Vd = 32V, Tbase = 85 C Channel Temperature (TCH) 160 C 0uS, 5%, Pdiss = 0W Median Lifetime (TM) 1.92E09 Hours Thermal Resistance (1) (θjc) 0.79 C/W Vd = 32V, Tbase = 85 C Channel Temperature (TCH) 164.3 C 0uS, %, Pdiss = 0W Median Lifetime (TM) 1.24E09 Hours Thermal Resistance (1) (θjc) 0.88 C/W Vd = 32V, Tbase = 85 C Channel Temperature (TCH) 173 C 300uS, %, Pdiss = 0W Median Lifetime (TM) 5.E08 Hours Thermal Resistance (1) (θjc) 1. C/W Vd = 32V, Tbase = 85 C Channel Temperature (TCH) 0.3 C 300uS, %, Pdiss = 0W Median Lifetime (TM) 4.E07 Hours 1. Thermal resistance measured to bottom of package. Median Lifetime Median Lifetime vs. Channel Temperature 1.00E+19 1.00E+18 1.00E+17 1.00E+16 1.00E+ 1.00E+14 1.00E+ 1.00E+ 1.00E+11 1.00E+ 1.00E+09 1.00E+08 1.00E+07 1.00E+06 1.00E+05 25 75 0 5 0 175 0 225 2 275 Channel Temperature, T CH ( C) Datasheet: Rev B- 03-03- - 5 of 21 - Disclaimer: Subject to change without notice
Maximum Channel Temperature ( o C) TGF2819-FL Maximum Channel Temperature 260.0 Maximum Channel Temperature Package base fixed at 85 o C, Pdiss = 0 W 240.0 2.0 0.0 180.0 160.0 5% Duty Cycle % Duty Cycle % Duty Cycle % Duty Cycle 140.0 1.0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 Pulse Width (sec) Datasheet: Rev B- 03-03- - 6 of 21 - Disclaimer: Subject to change without notice
Load Pull Smith Charts RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18. 1. Test Conditions: VDS = 32 V, IDQ = 2 ma 2. Test Signal: Pulse Width = 0 µsec, Duty Cycle = % 2.7GHz, Load-pull 0.1 Zs(fo) = 7.-3.63i Max Power is 51.3dBm at Z = 2.704-3.398i = -0.4692-0.393i Max Gain is.4db at Z = 2.404-0.809i = -0.6056-0.47i Max PAE is 57.1% at Z = 1.921-1.351i = -0.6565-0.1877i 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1-0.1 11.6 11.1 56.7 54.7 52.7.7.9-0.2 51.1-0.3 Zo = Pin_ref = 19dBm -0.4 Power Gain PAE Datasheet: Rev B- 03-03- - 7 of 21 - Disclaimer: Subject to change without notice
Load Pull Smith Charts RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18. 1. Test Conditions: VDS = 32 V, IDQ = 2 ma 2. Test Signal: Pulse Width = 0 µsec, Duty Cycle = % 2.9GHz, Load-pull Zs(fo) = 8.04-7.51i 0 0.1 0.2.3 0.3 Max Power is 51.6dBm at Z = 2.377-3.5i = -0.4934-0.4278i Max Gain is.6db at Z = 2.514-1.449i = -0.577-0.1827i Max PAE is 63.8% at Z = 1.796-2.264i = -0.6352-0.38i 0.4 0.5 0.6-0.1.3.8 62.2 51.2 60.2 58.2-0.2.3 51.4 51.6-0.3 Zo = Pin_ref =.6dBm -0.4 Power Gain PAE Datasheet: Rev B- 03-03- - 8 of 21 - Disclaimer: Subject to change without notice
Load Pull Smith Charts RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18. 1. Test Conditions: VDS = 32 V, IDQ = 2 ma 2. Test Signal: Pulse Width = 0 µsec, Duty Cycle = % 3.1GHz, Load-pull Zs(fo) =.14-8.66i 0 0.1 0.2 0.3 Max Power is 51.1dBm at Z = 2.962-4.499i = -0.3771-0.478i Max Gain is.8db at Z = 1.394-1.6i = -0.7214-0.2418i Max PAE is 57.9% at Z = 1.75-2.246i = -0.6422-0.314i 0.4 0.5 0.6-0.1.5 56.6 54.6 52.6-0.2.5 51.1.9.7-0.3 Zo = Pin_ref = 25.5dBm -0.4 Power Gain PAE Datasheet: Rev B- 03-03- - 9 of 21 - Disclaimer: Subject to change without notice
Load Pull Smith Charts RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18. 1. Test Conditions: VDS = 32 V, IDQ = 2 ma 2. Test Signal: Pulse Width = 0 µsec, Duty Cycle = % 3.3GHz, Load-pull Zs(fo) =.5-2.53i 0 0.1 0.2 0.3 0.4 Max Power is 51dBm at Z = 2.435-4.724i = -0.4055-0.534i Max Gain is.8db at Z = 1.759-2.31i = -0.6377-0.3218i Max PAE is 53.7% at Z = 1.8-2.877i = -0.5982-0.3892i 0.5 0.6 0.7 0.8-0.1-0.2.4.9 53 51.4 49-0.3.8.6.4-0.4 Zo = Pin_ref = 23.8dBm -0.5 Power Gain PAE Datasheet: Rev B- 03-03- - of 21 - Disclaimer: Subject to change without notice
Load Pull Smith Charts RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency at reference planes indicated on page 18. 1. Test Conditions: VDS = 32 V, IDQ = 2 ma 2. Test Signal: Pulse Width = 0 µsec, Duty Cycle = % 3.5GHz, Load-pull Zs(fo) = 7.59+2.i 0 0.1 0.2 0.3 0.4 Max Power is.8dbm at Z = 2.293-5.249i = -0.3761-0.5875i Max Gain is.5db at Z = 1.314-2.805i = -0.6653-0.49i Max PAE is 48.4% at Z = 2.077-3.533i = -0.5256-0.4462i 0.5 0.6 0.7 0.8-0.1.5-0.2 47.9.9 43.9-0.3.8.6.4-0.4 Zo = Pin_ref = 23.7dBm -0.5 Power Gain PAE Datasheet: Rev B- 03-03- - 11 of 21 - Disclaimer: Subject to change without notice
Gain [db] Gain [db] Gain [db] Gain [db] Gain [db] Typical Load-pull Performance Power Tuned 1. Vds = 32V, Idq = 2mA, Pulse Width = 0uS, Duty Cycle = %, 25 C 2. Performance measured at device s reference planes. See page 18. TGF2819-FL 18 17 16 14 11 TGF2819-FL Gain and PAE vs. Pout 2.7GHz; Vds = 32V; Idq = 2mA; Pulse: 0us, %; Power Tuned Zs = 7.-j3.63Ω Zl = 2.70-j3.40Ω 39 40 41 42 43 44 46 47 48 49 51 52 TGF2819-FL Pout Gain [dbm] and PAE vs. Pout 18 3.1GHz; Vds = 32V; Idq = 2mA; Pulse: 0us, %; Power Tuned 40 35 30 25 19 18 17 16 14 11 TGF2819-FL Gain and PAE vs. Pout 2.9GHz; Vds = 32V; Idq = 2mA; Pulse: 0us, %; Power Tuned Zs = 8.04-j7.51Ω Zl = 2.38-j3.55Ω 39 40 41 42 43 44 46 47 48 49 51 52 Pout [dbm] TGF2819-FL Gain and PAE vs. Pout 18 3.3GHz; Vds = 32V; Idq = 2mA; Pulse: 0us, %; Power Tuned 60 55 40 35 30 25 17 16 14 11 Zs =.1-j8.66Ω Zl = 2.96-j4.Ω 39 40 41 42 43 44 46 47 48 49 51 52 Pout [dbm] 40 35 30 25 17 16 14 11 Zs =.5-j2.53Ω Zl = 2.44-j4.72Ω 38 39 40 41 42 43 44 46 47 48 49 51 52 Pout [dbm] 40 35 30 25 18 17 16 14 11 TGF2819-FLGain and PAE vs. Pout 3.5GHz; Vds = 32V; Idq = 2mA; Pulse: 0us, %; Power Tuned Zs = 7.59+j2.Ω Zl = 2.29-j5.25Ω 40 35 30 25 38 39 40 41 42 43 44 46 47 48 49 51 52 Pout [dbm] Datasheet: Rev B- 03-03- - of 21 - Disclaimer: Subject to change without notice
Gain [db] Gain [db] Gain [db] Gain [db] Gain [db] Typical Load-pull Performance Efficiency Tuned 3. Vds = 32V, Idq = 2mA, Pulse Width = 0uS, Duty Cycle = %, 25 C 4. Performance measured at device s reference planes. See page 18. TGF2819-FL 19 18 17 16 14 11 9 8 19 18 17 16 14 11 TGF2819-FL Gain and PAE vs. Pout 2.7GHz; Vds = 32V; Idq = 2mA; Pulse: 0us, %; Efficiency Tuned Zs = 7.-j3.63Ω Zl (fo)= 1.96-j1.93Ω Zl (2fo)= 2.37+j.1Ω 33 35 37 39 41 43 47 49 51 Pout [dbm] TGF2819-FL Gain and PAE vs. Pout 3.1GHz; Vds = 32V; Idq = 2mA; Pulse: 0us, %; Efficiency Tuned Zs =.1-j8.66Ω Zl(fo) = 1.83-j2.30Ω Zl(fo) = 1.97+j2.83Ω 65 60 55 40 35 30 25 5 42 43 44 46 47 48 49 51 Pout [dbm] 70 65 60 55 40 35 30 25 17.0 16.5 16.0.5.0 14.5 14.0.5.0.5 TGF2819-FL Gain and PAE vs. Pout 2.9GHz; Vds = 32V; Idq = 2mA; Pulse: 0us, %; Efficiency Tuned Zs = 8.04-j7.51Ω Zl (fo)= 1.81-j2.24Ω Zl(2fo) = 5.92-j23.5Ω.0 40 41 42 43 44 46 47 48 49 51 52 Pout [dbm] 19 18 17 16 14 TGF2819-FL Gain and PAE vs. Pout 3.3GHz; Vds = 32V; Idq = 2mA; Pulse: 0us, %; Efficiency Tuned Zs =.5-j2.53Ω Zl(fo) = 1.90-j2.85Ω Zl(2fo) = 1.96+j1.58Ω 11 40 41 42 43 44 46 47 48 49 51 Pout [dbm] 70 65 60 55 40 35 30 25 60 55 40 35 30 25 19 18 17 16 14 11 TGF2819-FL Gain and PAE vs. Pout 3.5GHz; Vds = 32V; Idq = 260mA; Pulse: 0us, %; Efficiency Tuned Zs = 7.61+j2.57Ω Zl (fo)= 2.11-j3.65Ω Zl (fo)= 2.39+j9.60Ω 40 41 42 43 44 46 47 48 49 51 52 Pout [dbm] 65 60 55 40 35 30 25 Datasheet: Rev B- 03-03- - of 21 - Disclaimer: Subject to change without notice
PAE3dB [%] P3dB [W] G3dB [db] TGF2819-FL Performance Over Temperature Performance measured in TriQuint s 3.1 GHz to 3.5 GHz Evaluation Board at 3 db compression. 140 P3dB vs. Frequency vs. Temperature 16 G3dB vs. Frequency vs. Temperature 8 6 4 2 0 8 6 4 2-40 C - C 0 C 25 C C 65 C 85 C 14 11 9-40 C - C 0 C 25 C C 65 C 85 C 1 3.1 3.2 3.3 3.4 3.5 Frequency [GHz] 8 3.1 3.2 3.3 3.4 3.5 Frequency [GHz] 52 PAE3dB vs. Frequency vs. Temperature 51 49 48 47-40 C - C 0 C 25 C C 65 C 85 C 46 3.1 3.2 3.3 3.4 3.5 Frequency [GHz] 1. Test Conditions: VDS = 32 V, IDQ = 2 ma 2. Test Signal: Pulse Width = 0 µs, Duty Cycle = % Datasheet: Rev B- 03-03- - 14 of 21 - Disclaimer: Subject to change without notice
Power [W] Gain [db] TGF2819-FL Evaluation Board Performance at 25 C Performance measured in TriQuint s 3.1 GHz to 3.5 GHz Evaluation Board at 3 db compression. Output Power and Gain vs. Frequency @ 25 C 140.0 8 14.5 6 14.0 4.5 2.0 0.5 8.0 6 11.5 4 Power 11.0 2 Gain.5 1.0 3.1 3.2 3.3 3.4 3.5 Frequency [GHz] PAE vs. Frequency at 25 C 51 51 51 49 49 49 3.1 3.2 3.3 3.4 3.5 Frequency [GHz] 1. Test Conditions: VDS = 32 V, IDQ = 2 ma 2. Test Signal: Pulse Width = 0 µs, Duty Cycle = % Datasheet: Rev B- 03-03- - of 21 - Disclaimer: Subject to change without notice
Application Circuit DC_V ID=Vg DC_V ID=Vd CAP ID=C7 CAP ID=C4 CAP ID=C6 RES ID=R2 CAP ID=C5 RES ID=R1 IND ID=L1 1 FET IND ID=L2 CAP ID=C8 PORT P=1 2 Z= Ohm PORT P=2 Z= Ohm CAP ID=C1 CAP ID=C2 CAP ID=C3 3 Bias-up Procedure Set gate voltage (VG) to -5.0V Set drain voltage (VD) to 32 V Slowly increase VG until quiescent ID is 2 ma. Apply RF signal Bias-down Procedure Turn off RF signal Turn off VD and wait 1 second to allow drain capacitor dissipation Turn off VG Datasheet: Rev B- 03-03- - 16 of 21 - Disclaimer: Subject to change without notice
Evaluation Board Layout Top RF layer is 0.0 thick Rogers RO43B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. C7 C6 R1 C2 C1 C4 R2 L1 C3 C5 L2 C8 Bill of Materials Reference Design Value Qty Manufacturer Part Number R1 0Ω 1 Vishay/Dale CRCW06030RJNEA C1, C2 5.6pF 2 ATC 600S5R6BT C3 1.0pF 1 ATC 600S1R0BT L1 22nH 1 Coilcraft 0805CS-2X-LB R2 Ω 1 Vishay/Dale CRCW0603R0JNEA C4 uf 1 Murata C1632X5R0J6M0AC L2 nh 1 Coilcraft A04T_L C5 2400pF 1 Murata C08BL242X-5UN-X0T C6 00pF 1 ATC 800B2JTXT C7 2uF 1 United Chemi-Con EMVY0ADA221MJA0G C8 pf 1 ATC 600S0JT2XT Datasheet: Rev B- 03-03- - 17 of 21 - Disclaimer: Subject to change without notice
Pin Layout Reference Planes Note: The TGF2819-FL will be marked with the TGF2819-FL designator and a lot code marked below the part designator. The YY represents the last two digits of the calendar year the part was manufactured, the WW is the work week of the assembly lot start, the MXXX is the production lot number, and the ZZZ is an auto-generated serial number. Pin Description Pin Symbol Description 1 VD / RF OUT Drain voltage / RF Output 2 VG / RF IN Gate voltage / RF 3 Flange Source connected to ground Datasheet: Rev B- 03-03- - 18 of 21 - Disclaimer: Subject to change without notice
Mechanical Information All dimensions are in inches. Note: Unless otherwise noted, all tolerances are +/-0.005 inches. This package is lead-free/rohs-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free and tin-lead soldering processes. Datasheet: Rev B- 03-03- - 19 of 21 - Disclaimer: Subject to change without notice
Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class 1B Value: 0 V and < 00V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating The part is rated Moisture Sensitivity Level 3 at 260 C per JEDEC standard IPC/JEDEC J-STD-0. ECCN US Department of Commerce 3A001.b.3.a TGF2819-FL Solderability Compatible with the latest version of J-STD-0, Lead free solder, 260 C RoHs Compliance This part is compliant with EU 02/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (CHBr402) Free PFOS Free SVHC Free Recommended Soldering Temperature Profile Datasheet: Rev B- 03-03- - of 21 - Disclaimer: Subject to change without notice
Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Tel: +1.972.994.8465 Email: info-sales@triquint.com Fax: +1.972.994.84 For technical questions and application information: Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev B- 03-03- - 21 of 21 - Disclaimer: Subject to change without notice