TOSHIBA Photocoupler GaAs Ired & Photo Transistor TLP62,TLP62 2,TLP62 4 Programmable Controller AC / DC Input Module Solid State Relay Unit in mm The TOSHIBA TLP62, 2 and 4 consists of a photo transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP62 2 offers two isolated channels in an eight lead plastic DIP, which the TLP62 4 provides four isolated channels in a sixteen plastic DIP. Collector emitter voltage: V (min.) Current transfer ratio: % (min.) Rank GB: % (min.) TOSHIBA Weight:.26 g B2 Pin Configurations (top view) TLP62 TLP62-2 TLP62-4 4 8 6 2 2 7 2 : Anode 2: Cathode : Emitter 4: Collector 6 4 4 4, : Anode 2, 4: Cathode, 7: Emitter 6, 8: Collector 6 2 TOSHIBA Weight:.4 g C4 7 8 9,,, 7: Anode 2, 4, 6, 8: Cathode 9,,, : Emitter, 2, 4, 6: Collector TOSHIBA Weight:. g 2A 27--
Current Transfer Ratio Type Classi fication * Current Transfer Ratio (%) (I C / I F ) I F = ma, V CE = V, Min. Max. Marking Of Classification (None) 6 Blank, Y, Y, G, G, B, B, GB Rank Y Y, Y TLP62 Rank GR G, G Rank BL 2 6 B, B Rank GB 6 G, G, B, B, GB TLP62 2 TLP62 4 (None) 6 Blank, GR, BL, GB Rank GB 6 GR, BL, GB *: Ex. rank GB: TLP62 (GB) (Note) Application type name for certification test, please use standard product type name, i.e. TLP62 (GB): TLP62 TLP62 2 (GB): TLP62 2 Made In Japan Made In Thailand UL recognized E6749 *2 E249 *2 BSI approved 68, 744 * 6, 744 * SEMKO approved 979 / *4 *2 UL77 * BS EN66: 22, BS EN69-: 22 *4 EN69 (approved is TLP62 only) 2 27--
Option (D4) type VDE approved: DIN EN 6747--2, certificate no. 492 Maximum operating insulation voltage: 89 V PK Highest permissible over voltage: 8 V PK (Note) When a EN 6747--2 approved type is needed, please designate the Option (D4) 7.62 mm pich.6 mm pich standard type (LF2) type Creepage distance : 6.4 mm (min.) 8. mm (min) Clearance : 6.4 mm (min.) 8. mm (min) Insulation thickness :.4 mm (min.).4 mm (min) 27--
Absolute Maximum Ratings () LED Detector Characteristic Symbol TLP62 Rating TLP62 2 TLP62 4 Forward current I F 6 ma Forward current derating ΔI F / C.7 (Ta > 9 C). () ma / C Pulse forward current I FP (μs pulse, pps) A Power dissipation P D 7 mw Power dissipation derating ΔP D / C..7 mw / C Reverse voltage V R V Junction temperature T j 2 C Collector emitter voltage V CEO V Emitter collector voltage V ECO 7 V Collector current I C ma Collector power dissipation ( circuit) Collector power dissipation derating ( circuit, Ta 2 C) Unit P C mw ΔP C / C.. mw / C Junction temperature T j 2 C Storage temperature range T stg ~2 C Operating temperature range T opr ~ C Lead soldering temperature T sol 26 ( s) C Total package power dissipation P T 2 mw Total package power dissipation derating (Ta 2 C) ΔP T / C 2.. mw / C Isolation voltage (Note ) BV S (AC, min., R.H. 6%) V rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note ) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage V CC 24 V Forward current I F 6 2 ma Collector current I C ma Operating temperature T opr 2 8 C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 4 27--
Individual Electrical Characteristics () Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage V F I F = ma... V LED Reverse current I R V R = V μa Capacitance C T V =, f = MHz pf Detector Collector emitter breakdown voltage Emitter collector breakdown voltage Collector dark current Capacitance (collector to emitter) V (BR) CEO I C =. ma V V (BR) ECO I E =. ma 7 V I CEO V CE = 24 V na V CE = 24 V, Ta = 8 C 2 μa C CE V =, f = MHz pf Coupled Electrical Characteristics () Characteristic Symbol Test Condition MIn. Typ. Max. Unit I Current transfer ratio I C / I F = ma, V CE = V F Rank GB I Saturated CTR I C / I F = ma, V CE =.4 V F (sat) Rank GB 6 6 6 % % Collector emitter saturation voltage V CE (sat) I C = 2.4 ma, I F = 8 ma.4 IC =.2 ma, I F = ma.2 Rank GB.4 V Isolation Characteristics () Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance (input to output) C S V S =, f = MHz.8 pf Isolation resistance R S V S = V 2 4 Ω Isolation voltage BV S AC, minute AC, second, in oil V rms DC, minute, in oil V dc 27--
Switching Characteristics () Characteristic Symbol Test Condition Min. Typ. Max. Unit Rise time t r 2 Fall time t f V CC = V, I C = 2 ma Turn on time t on R L = Ω Turn off time t off Turn on time t ON 2 Storage time t S R L =.9 kω (Fig.) V CC = V, I F = 6 ma Turn off time t OFF 2 μs μs Fig. Switching time test circuit I F R L V CC V CE I F VCE t S V CC 4.V.V t ON t OFF 6 27--
TLP62 I F T a TLP62-2 TLP62-4 I F T a Allowable forward current IF (ma) 8 6 4 2 Allowable forward current IF (ma) 8 6 4 2-2 2 4 6 8 2-2 2 4 6 8 2 Ambient temperature Ta ( C) Ambient temperature Ta ( C) 24 TLP62 P C T a 2 TLP62-2 TLP62-4 P C T a Allowable collector power dissipation PC (mw) 2 6 2 8 4 Allowable collector power dissipation PC (mw) 8 6 4 2-2 2 4 6 8 2-2 2 4 6 8 2 Ambient temperature Ta ( C) Ambient temperature Ta ( C) TLP62 I FP D R TLP62-2 TLP62-4 I FP D R Pulse width μs Pulse width μs Pulse forward current IFP (ma) Pulse forward current IFP (ma) - -2 - - -2 - Duty cycle ratio DR Duty cycle ratio DR 7 27--
I F V F ΔV F / ΔTa I F Forward current IF (ma).. Forward voltage temperature coefficient ΔVF / ΔTa (mv / C) -2.8-2.4-2. -.6 -.2 -.8..4.6.8..2.4.6 Forward voltage V F (V) -.4.. Forward current I F (ma) I FP V FP I D T a Pulse forward current IFP (ma) Pulse width μs Repetitive Frequency = Hz.4.8.2.6 2. 2.4 Dark current ID (μa) - -2 - -4 V CE = 24V V V 4 8 2 6 Pulse forward voltage V FP (V) Ambient temperature T a ( C) I C V CE I C V CE Collector current IC (ma) 8 6 4 2 ma ma 2mA ma ma IF = ma PC (MAX.) Collector current IC (ma) 2 2 ma 4mA ma 2mA ma ma IF = 2mA 2 4 6 8 Collector-emitter voltage V CE (V).2.4.6.8..2.4 Collector-emitter voltage V CE (V) 8 27--
I C I F I C / I F I F Collector current IC (ma).. VCE = V VCE =.4V Sample A Sample B Current transfer ratio IC / IF (%) Sample A Sample B VCE = V VCE =.4V.. Forward current I F (ma)... Forward current I F (ma).2 IF = ma IC = ma V CE (sat) T a Collector current IC (ma)... I C T a VCE = V 2mA ma ma ma IF =.ma -2 2 4 6 8 Ambient temperature T a ( C) Collector-emitter saturation Voltage VCE (sat) (V) Switching time (μs).6.2.8.4-2 2 4 6 8 Ambient temperature T a ( C) Switchingtime R L IF = 6mA VCC = V toff ts ton Load resistance R L (kω) 9 27--
RESTRICTIONS ON PRODUCT USE 277-EN The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 27--